DMB-T系统中FFT模块的设计与实现

介绍了地面数字多媒体/电视广播传播系统(DMB-T)中3 780点FFT模块的重要作用.考虑到不适合直接利用现已成熟的基-2和基-4的算法,提出一种全并行流水结构的3 780点FFT的设计和实现方案.该方案采用WFTA算法和PFA算法,把3780分解为7×9×5×4×3共5级的流水线结构.通过对整个系统的仿真与硬件实现,证明该方案性能上能够满足TDS-OFDM系统的信噪比要求.     

一种应用于数字电视地面广播的OFDM多载波调制方法

介绍了数字多媒体电视广播协议（DMB-T）中的信号帧结构，该结构引入PN码帧头用于时域同步。从理论上分析了时域同步正交频分复用多载波调制（TDS-OFDM）的参数选取策略。重点说明了子载波数量确定为3780的选择步骤。在这种信号结构下，TDS-OFDM信号的通带带宽为7.56MHz，既满足了电视带宽的要求，又满足了奈奎斯特采样定律。最后简要介绍了实现3780点快速傅立叶变换（FFT）的算法。其计算复杂度和容量复杂度都与标准的4096点FFT算法相当。     

一种改进型基-8 FFT算法及其ASIC实现

本文在介绍传统FFT原理和流程的基础上，根据具体应用要求，结合基-4算法的长处，对传统基-8FFT的结构做了改进，并用ASIC实现了一个12位64点复数FFT的计算。布线后门级模型的仿真验证了改进后的结构不但计算正确，而且效率有显著的提高。论文最后简单总结了改进后12位64点复数FFT专用电路目前已经达到的性能指标。     

一种按时间抽取的混合基实序列高效FFT算法

针对2N点实序列FFT的实现,分析了FFT运算的基本原理,并在基本原理的基础上介绍了一种按时间抽取的混合基FFT算法.此算法采用"包装"算法和基2-基4混合算法结合的方法进行运算.通过复杂度分析,显示了此算法与传统的单一基2或基4的FFT相比,大大减少了计算过程中所需的实加法的个数;当点数大于1024时,所需实乘法的个数也有所减少.这是一种实序列FFT的高效低复杂度算法.     

基于FPGA的4k点基-16FFT模块的实现

针对高速实时处理的要求,提出了4096点快速傅立叶变换(FFT)模块在现场可编程门阵列(FPGA)中的设计和实现。在运算模块中,基于按频率抽取基-4算法提出了一种新型的基-16蝶型算法,并采用八级流水结构和四路转换器来实现。本文采用块浮点和循环存储结构,避免了溢出和节省了大量的硬件资源。实验结果表明,该方法在保证了运算精度和实现复杂度的同时,使运算速度相对于基-4算法提高了1倍。     

长度为2^n的FFT运算基实现

大点数FFT运算是数字信号处理中关键技术环节,本文提出一种大点数FFT运算基的实现,该实现是根据[1]中所提出的算法,结合寄存器阵列模块和重排序模块,实现FFT运算基模块内部的数据传输和模式切换,以基4与基2为模块中的基本运算单元构成大点数的FFT运算基,在控制电路配合下实现快速傅里叶变换。该实现通过面向寄存器级的Simulink仿真模型,验证本文所设计模块功能的正确性和可行性,为基于大点数的FFT运算指出了一种实现方法。     

一种基于FPGA的高性能FFT处理器设计

FFT算法是高速实时信号处理的关键算法之一，在数字EW接收机中有着广泛的应用前景。本文基于Xilinx公司的Vertex-Ⅱ Pro系列FPGA，设计一种级联结构的1024点FFT处理器，采用基-4并行蝶算单元，能并行处理四路输入数据，极大地提高了FFT的处理速度。在系统时钟为100MHz时，完成1024点复数FFT运算仅需要2．56μs。     

一个高效的嵌入式浮点FFT处理器的实现

FFT是数字信号处理中的一种非常重要的算法。本文构造了一个适于嵌入式应用的基16FFT处理器局部流水结构,同时设计实现了一个高效的基4蝶形运算模块。我们的研究应用了局部流水和反馈的思想,使基16FFT蝶形运算模块得以由两个基4/基2蝶形模块组成的反馈流水电路实现,在简化结构的同时提高了处理速度。基4蝶形模块中运算模块的利用率达到100％,而且比传统的基四蝶形模块节省60％以上的资源。     

数模同播音频广播系统中OFDM调制解调器的设计

设计了一种基于IFFT/FFT的高效OFDM调制解调器,实现数模同播音频广播系统中数字音频信号的OFDM调制解调,包括发射机中用于形成OFDM符号的时域与频域交织模块、OFDM调制模块和接收机中OFDM解调模块、时域与频域解交织模块。通过对IFFT/FFT算法的改进,该OFDM调制解调器中数据的输入顺序和输出顺序相同,不需要进行顺序输人逆序输出,并且可以把现有基2的幂次方的FFT变换扩展到任意点,实现适用于任意点的IFT/FFT,简化了IFFT/FFT模块本身和交织／解交织的资源消耗,巧妙地节省了系统所需的资源。     

非2-基FFT的素因子算法研究

提出一种新的非2-基N点FFT的素因子算法.该方案与原素因子分解算法比较,实现了各个小点数DFT的同址顺序运算,并通过简单的地址模加运算得到顺序的输出,省去了多余的整序运算,是一种通用N点FFT算法.设计结构规整简单,利于硬件实现.以中国数字电视广播地面传输标准(DTMB)规定的3 780点FFT为例,结合WFTA算法和混合基算法,介绍了算法的具体设计与实现方案.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.