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A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI 总被引:1,自引:0,他引:1
Zhang Jing Li Baoxi Zhao Lingjuan Wang Baojun Zhou Fan Zhu Hongliang Bian Jing Wang Wei 《半导体学报》2005,26(11):2053-2057
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI.The threshold current is 37mA and the output power at 100mA gain current is 3.5mW.When coupled to a single-mode fiber with a coupling efficiency of 15%,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V.The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications. 相似文献
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D. Moss D. Landheer A. Delage F. Chatenoud M. Dion 《Photonics Technology Letters, IEEE》1991,3(7):645-647
The authors demonstrate a SQW-GRINSCH ridge-waveguide electroabsorption modulator in GaAs/Al/sub x/Ga/sub 1-x/As that has a very high contrast ratio and low operating voltage and also acts as a laser with relatively low threshold current. They achieve contrast ratios of 10 dB/100 mu m of cavity length with an operating voltage of less than -4 V. In addition, when operated as laser, the device exhibits a threshold current of 25 mA. The active layer has a capacitance of 205 pF/mm/sup 2/ which would allow the fabrication of a device with a modulation bandwidth of over 20 GHz. The laser operated at a wavelength only 2-3 nm shorter than the optimum modulation wavelength.<> 相似文献
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A bistable operation with a hysteresis of 24 mA in the power-current curve of a three section DBR laser is reported. The laser threshold at increasing current is 51 mA while in the opposite direction the laser action is sustained down to 27 mA. The same effect was observed by monitoring the laser threshold through the Bragg and phase section currents. In a large part of the current range which corresponds to the bistable laser operation, strong self pulsations have been observed at frequencies between 1.5 GHz and 3.5 GHz with an amplitude of up to 31.4 dB 相似文献
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R.M. Lammert G.M. Smith S. Hughes M.L. Osowski A.M. Jones J.J. Coleman 《Photonics Technology Letters, IEEE》1996,8(6):797-799
The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and monolithically integrated external cavity electroabsorption modulators fabricated by selective-area MOCVD are presented. Uncoated devices exhibit CW threshold currents as low as 10.5 mA with slope efficiencies of 0.21 W/A from the laser facet. Wavelength tuning of 7 nm is obtained by injection current heating of the DBR section. These devices also exhibit extinction ratios of 18 dB from the modulator facet at a low modulator bias of 1 V, when measured with a broad-area detector. When coupled to a singlemode fiber, these devices exhibited high extinction ratios of 40 dB at a modulator bias of 1.25 V. 相似文献
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基于自制的双波长低反射率光纤光栅(FBG)作为分布式布拉格反射激光器(DBR)的输出端,实现了掺Yb3+双频DBR光纤激光器。该FBG的双波长间隔为0.12 nm,对应的频差为32 GHz。双频光纤激光器输出的两个波长分别为1 063.09 nm和1 063.21 nm,光谱信噪比大于60 dB。每一个波长只包含一个纵模。两个纵模的拍频信号为32.014 GHz,频谱信噪比大于35 dB。得益于光纤激光器本身具有结构紧凑,抗干扰能力强等特点,该型激光器有望作为高品质,小型化的微波信号源,用于微波传感和通信等领域。 相似文献
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R.M. Lammert S.D. Roh J.S. Hughes M.L. Osowski J.J. Coleman 《Photonics Technology Letters, IEEE》1997,9(5):566-568
In this letter, we report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 /spl mu/m, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 /spl mu/m) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-/spl mu/m device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 /spl mu/m device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-/spl mu/m device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively. 相似文献
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We report an electroabsorption modulator (EAM)-integrated distributed Bragg reflector laser diode (DBR-LD) capable of supporting a high data rate and a wide wavelength tuning. The DBR-LD contains two tuning elements, plasma and heater tunings, both of which are implemented in the DBR section, which have blue-shift and red-shift in the Bragg wavelength through a current injection, respectively. The light created from the DBR-LD is intensity-modulated through the EAM voltage, which is integrated monolithically with the DBR-LD using a butt–joint coupling method. The fabricated chip shows a threshold current of approximately 8 mA, tuning range of greater than 30 nm, and static extinction ratio of higher than 20 dB while maintaining a side mode suppression ratio of greater than 40 dB under a window of 1550 nm. To evaluate its modulation properties, the chip was bonded onto a mount including a radiofrequency line and a load resistor showing clear eye openings at data rates of 25 Gb/s nonreturn-to-zero and 50 Gb/s pulse amplitude modulation 4-level, respectively. 相似文献
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Sun Changzheng Xiong Bing Wang Jian Cai Pengfei Tian Jianbo Luo Yi Liu Yu Xie Liang Zhang Jiabao and Zhu Ninghua 《半导体学报》2005,26(4):662-666
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 1e-12 after transmission through 35km single mode fiber. 相似文献
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报道了一种新型外腔精确波长激光器。该器件由透镜光纤、单端增透的激光二极管(LD)芯片、准直透镜、窄带滤光片和高反镜依次级联而成,使用窄带滤光片作为选频和波长锁定元件。推导了该激光器的外腔等效反射率,简要分析了静态相关特性,给出了初步实验结果:窄带滤光片的插入损耗为0.5dB,自由光谱范围大于40nm,谱线宽度小于1.7nm。外腔激光器在较大的注入电流范围内实现了稳定的单纵模输出,阈值电流为25mA,边模抑制比高达40dB,输出波长符合国际电信联盟(ITU-T)建议的波长标称值。该器件具有制作简单、成本低廉等优点,特别适用于基于波分多址(WDMA)技术的以太网无源光网络(EPON)系统。 相似文献
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针对铷原予能级跃迁对光谱的特殊需求,设计并制备了795 nm单模垂直腔面发射激光器(VCSEL).根据对VCSEL的光场和模式的分析和计算结果,设计了单模VCSEL芯片结构.采用MOCVD技术生长了外延结构,制备了不同有源区直径的氧化限制型VCSEL芯片并进行了测试.当有源区直径从6 μm减小到3μm时,VCSEL芯片的边模抑制比(SMSR)由8.76 dB增加到34.05 dB,阈值电流由0.77 mA减小到0.35 mA.有源区直径为6,5,4和3μm的VCSEL芯片的输出功率分别为0.37,0.46,0.58和0.44 mW,有源区直径为4μm的VCSEL芯片的远场为圆形光束,发散角为15°.85℃时3.5 μm有源区直径的VCSEL芯片输出功率为0.125 mW,激射波长为795.3 nm.室温3 dB带宽大于8 GHz,满足了铷原子传感器对VCSEL单模光谱、输出功率及调制速率的要求. 相似文献
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Jang‐Uk Shin Su Hwan Oh Yoon‐Jung Park Sang‐Ho Park Young‐Tak Han Heekyung Sung Kwang Ryong Oh 《ETRI Journal》2007,29(4):452-456
Very compact 4‐channel 200‐GHz‐spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth‐order gratings as reflection gratings were formed using a conventional contact‐mask photo‐lithography process to achieve low‐cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ×0.1 nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression. 相似文献
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We report on the development of the first 30 nm tunable laser diode utilizing a front sampled grating-distributed Bragg reflector (SG-DBR) and a rear superstructure grating DBR (SSG-DBR). A high output power greater than 18 mW was achieved with superior longitudinal mode stability, as well as an overall power variation of less than 3 dB for the well-defined laser. Furthermore, lasers integrated with a semiconductor optical amplifier (SOA) enabled the output power to be controlled independently both by the active current and the SOA current, as well as achieving a maximum output power of 45 mW. The side-mode suppression ratio was in excess of 40 dB for all the 50 GHz spaced wavelength channels. 相似文献
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研制了一种高功率高边模抑制比及高波长稳定性的DBR型掺铒光纤激光器。该激光器使用980nmLD作为泵浦源,并使用长度为2.75m的高掺杂浓度的掺饵光纤作为增益介质,在1.55μm波段获得了3dB线宽为0.2nm,25dB线宽为0.4nm的激光输出。最大输出光功率25mW,输出功率稳定性±0.01dB,边模抑制比60dB,波长稳定性0.01dB(受光功率计精度的限制),阈值泵浦光功率8.6mW,斜率效率21.7%。 相似文献
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单片集成电吸收调制分布反馈激光器 总被引:2,自引:2,他引:0
提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20mA,工作电流为100mA时的出光功率为10mw,由吸收调制器(EAM)加-3V偏压时的消光比为12dB,实现了简化制作工艺并提高器件性能的预期目的,有望用... 相似文献
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A report is presented on continuous-wave (CW) singlemode operation of a distributed feedback GaInAsN laser diode at 1295 nm. A sidemode supression ratio of 43 dB is obtained at 60 mA drive current. Small signal modulation bandwidth measurements show a record 3 dB cutoff frequency of 13.8 GHz. 相似文献
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Tauke-Pedretti A. Dummer M. Barton J.S. Sysak M.N. Raring J.W. Klamkin J. Coldren L.A. 《Electronics letters》2007,43(10):584-585
A fully monolithic separate absorption and modulation region wavelength converter requiring no bias tees has been fabricated. The device consists of a transmitter comprising a sampled-grating DBR laser and series-push-pull Mach-Zehnder modulator, and a receiver composed of a linear semiconductor optical amplifier and a quantum well pin photodetector. The wavelength converter has a 13 GHz bandwidth and demonstrates error-free operation at 10 Gbit/s with unity gain 相似文献