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Ron Aroshas Idan Rosenthal Adin Stern Zvia Shmul Sergei Kalabukhov Nachum Frage 《Materials and Manufacturing Processes》2015,30(1):122-126
This work reports results of silicon carbide plates, disks, pipes, and pipe–disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900 °C for 30 min with a 35 MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples’ periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries. 相似文献
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本文报道分别以Ti/Si/C,Ti/SiC/C为原料,采用放电等离子烧结工艺制备Ti3SiC2材料的研究结果.以元素单质粉为原料,掺加适量Al作助剂能加速Ti3SiC2的反应合成并提高材料的纯度,在1200~1250℃的温度下能制备出经XRD、SME和EDS表征不含TiC和SiC等杂质相的纯净TiSiC2材料.而以Ti/SiC/C为原料时,有无Al作助剂都难以制备出纯净的Ti3SiC2,其反应合成温度明显高于以元素单质粉为原料的. 相似文献
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Sinterable nano silicon carbide powders of mean particle size (37 nm) were prepared by attrition milling and chemical processing
of an acheson type alpha silicon carbide having mean particle size of 0.39 μm (390 nm). Pressureless sintering of these powders
was achieved by addition of boron carbide of 0.5 wt% together with carbon of 1 wt% at 2050° C at vacuum (3 mbar) for 15 min.
Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission
electron microscopy. This study shows that the mechanism is a solid-state sintering process. Polytype transformation from
6H to 4H was observed. 相似文献
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将空心阴极效应运用于SiC陶瓷的烧结,选用纯SiC粉体为原料,在不添加烧结助剂的条件下,进行了烧结试验,并探讨了工艺参数的影响。结果表明:空心阴极烧结工艺可制备出致密度较高的SiC陶瓷。2200℃,保温3h的烧结条件下,获得相对密度为95%SiC烧结体。烧结体的断口SEM照片显示烧结试样的晶粒生长发育较为完善,气孔和晶界相对较少,断裂模式为穿晶断裂。 相似文献
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Preparation and Properties of Sintering Additives Coated Si3N4 from Heterogeneous Nucleation Processing 总被引:1,自引:0,他引:1
The sintering additives such as Al2O3 and /or Y2O3 were coated on the surfaces of Si3N4 particles via heterogeneous nucleation processing using a buffered pH solution as the precipitation reagent .They nucleated and grew only on the surfaces of Si3N4 and did not form sol particles in solution by TEM observation .The isoelectric point(IEP) of coated Si3N4 was different from that of as-received Si3N4.The IEP of Al(OH)3-coated Si3N4 occurred at pH8.4, which is close to that of alumina .When Al(OH)3-coated Si3N4 particles were coated with Y(OH)3,the IEP of coated Si3N4 powder shifted from pH8.4 to pH9.2 ,similar to that of yttria.In addition ,the rheological data showed that Al2O3 and /or Y2O3 coated Si3N4 suspension is nearly Newtonian and that added Si3N4 suspension shows a shear rate thinning behavior. 相似文献
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O. Mailliart F. Hodaj V. Chaumat N. Eustathopoulos 《Materials Science and Engineering: A》2008,495(1-2):174
In this investigation the influence of oxygen partial pressure PO2 on the wetting of SiC by a Co–Si alloy was studied. Wetting experiments were carried out in argon with different oxygen contents (from 5 to 1000 ppm). The relationship between wetting and deoxidation of surfaces (SiC and Co–Si alloy) was investigated. Calculations were performed to evaluate the temperature range over which deoxidation is possible. These calculations are in agreement with the experimental results. 相似文献
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This work describes sintering of SiC‐reinforced Al‐matrix composites and in‐situ synthesis of TiC in a powder mixture of Ti and C. In the first case, microwave energy is absorbed by SiC grains, heating the metal matrix to sintering and even melting temperature. The composite is processed at <1 kW microwave power. Microwave absorption and the heating rate increase with decreasing SiC particle size. Composites with high SiC content (70 vol.‐%) are processed at 650 °C/1 h in the microwave furnace, whereas conventional resistive heating at the same temperature did not allow sintering of the sample. In the second case, radiative energy allowed the heating of Ti/C samples up to 950 °C, and microwave assistance enhanced the reaction sintering of Ti/C powder mixtures forming TiC at the border of the Ti particles. The results are compared with conventional processing. Optical images and XRD patterns confirmed the formation of TiC for both techniques. 相似文献
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采用共沉淀法合成的复合添加剂粉体制备ZnO压敏陶瓷,用TG-DTA热分析沉淀物前驱体, 通过XRD、SEM、EDS和DLS表征复合粉体的物相、形貌、组成元素、粒度及其分布, 测试压敏陶瓷性能、并观察其结构.结果表明, 550℃煅烧前驱体生成各添加剂氧化物的混合物; 650℃煅烧1 h形成组成为(Bi1.14Co0.26Mn0.29)(Sb1.14Cr0.57Ni0.29)O6.25焦绿石型复合添加剂粉体, 复合粉体平均粒径为0.26μm; 复合粉体制备的ZnO压敏陶瓷的电位梯度为330 V/mm、非线性系数为47、漏电流为5μA/cm2, 电性能参数分别优于固相法混合添加剂粉体制备的压敏陶瓷, 这归因于复合粉体制备的压敏陶瓷具有更均匀的显微结构. 相似文献