Electron‐Rich Alcohol‐Soluble Neutral Conjugated Polymers as Highly Efficient Electron‐Injecting Materials for Polymer Light‐Emitting Diodes

We report the design and synthesis of three alcohol‐soluble neutral conjugated polymers, poly[9,9‐bis(2‐(2‐(2‐diethanolaminoethoxy) ethoxy)ethyl)fluorene] (PF‐OH), poly[9,9‐bis(2‐(2‐(2‐diethanol‐aminoethoxy)ethoxy)ethyl)fluorene‐alt‐4,4′‐phenylether] (PFPE‐OH) and poly[9,9‐bis(2‐(2‐(2‐diethanolaminoethoxy) ethoxy)ethyl)fluorene‐alt‐benzothiadizole] (PFBT‐OH) with different conjugation length and electron affinity as highly efficient electron injecting and transporting materials for polymer light‐emitting diodes (PLEDs). The unique solubility of these polymers in polar solvents renders them as good candidates for multilayer solution processed PLEDs. Both the fluorescent and phosphorescent PLEDs based on these polymers as electron injecting/transporting layer (ETL) were fabricated. It is interesting to find that electron‐deficient polymer (PFBT‐OH) shows very poor electron‐injecting ability compared to polymers with electron‐rich main chain (PF‐OH and PFPE‐OH). This phenomenon is quite different from that obtained from conventional electron‐injecting materials. Moreover, when these polymers were used in the phosphorescent PLEDs, the performance of the devices is highly dependent on the processing conditions of these polymers. The devices with ETL processed from water/methanol mixed solvent showed much better device performance than the devices processed with methanol as solvent. It was found that the erosion of the phosphorescent emission layer could be greatly suppressed by using water/methanol mixed solvent for processing the polymer ETL. The electronic properties of the ETL could also be influenced by the processing conditions. This offers a new avenue to improve the performance of phosphorescent PLEDs through manipulating the processing conditions of these conjugated polymer ETLs.     

Efficient Charge Carrier Injection and Balance Achieved by Low Electrochemical Doping in Solution‐Processed Polymer Light‐Emitting Diodes

Charge carrier injection and transport in polymer light‐emitting diodes (PLEDs) is strongly limited by the energy level offset at organic/(in)organic interfaces and the mismatch in electron and hole mobilities. Herein, these limitations are overcome via electrochemical doping of a light‐emitting polymer. Less than 1 wt% of doping agent is enough to effectively tune charge injection and balance and hence significantly improve PLED performance. For thick single‐layer (1.2 µm) PLEDs, dramatic reductions in current and luminance turn‐on voltages (V_J = 11.6 V from 20.0 V and V_L = 12.7 V from 19.8 V with/without doping) accompanied by reduced efficiency roll‐off are observed. For thinner (<100 nm) PLEDs, electrochemical doping removes a thickness dependence on V_J and V_L, enabling homogeneous electroluminescence emission in large‐area doped devices. Such efficient charge injection and balance properties achieved in doped PLEDs are attributed to a strong electrochemical interaction between the polymer and the doping agents, which is probed by in situ electric‐field‐dependent Raman spectroscopy combined with further electrical and energetic analysis. This approach to control charge injection and balance in solution‐processed PLEDs by low electrochemical doping provides a simple yet feasible strategy for developing high‐quality and efficient lighting applications that are fully compatible with printing technologies.     

Device Physics of White Polymer Light‐Emitting Diodes

The charge transport and recombination in white‐emitting polymer light‐ emitting diodes (PLEDs) are studied. The PLED investigated has a single emissive layer consisting of a copolymer in which a green and red dye are incorporated in a blue backbone. From single‐carrier devices the effect of the green‐ and red‐emitting dyes on the hole and electron transport is determined. The red dye acts as a deep electron trap thereby strongly reducing the electron transport. By incorporating trap‐assisted recombination for the red emission and bimolecular Langevin recombination for the blue emission, the current and light output of the white PLED can be consistently described. The color shift of single‐layer white‐emitting PLEDs can be explained by the different voltage dependencies of trap‐assisted and bimolecular recombination.     

Self‐assembled Electroactive Phosphonic Acids on ITO: Maximizing Hole‐Injection in Polymer Light‐Emitting Diodes

In order to fulfill the promise of organic electronic devices, performance‐limiting factors, such as the energetic discontinuity of the material interfaces, must be overcome. Here, improved performance of polymer light‐emitting diodes (PLEDs) is demonstrated using self‐assembled monolayers (SAMs) of triarylamine‐based hole‐transporting molecules with phosphonic acid‐binding groups to modify the surface of the indium tin oxide (ITO) anode. The modified ITO surfaces are used in multilayer PLEDs, in which a green‐emitting polymer, poly[2,7‐(9,9‐dihexylfluorene)‐co‐4,7‐(2,1,3‐benzothiadiazole)] (PFBT5), is sandwiched between a thermally crosslinked hole‐transporting layer (HTL) and an electron‐transporting layer (ETL). All tetraphenyl‐diamine (TPD)‐based SAMs show significantly improved hole‐injection between ITO and the HTL compared to oxygen plasma‐treated ITO and simple aromatic SAMs on ITO. The device performance is consistent with the hole‐transporting properties of triarylamine groups (measured by electrochemical measurements) and improved surface energy matching with the HTL. The turn‐on voltage of the devices using SAM‐modified anodes can be lowered by up to 3 V compared to bare ITO, yielding up to 18‐fold increases in current density and up to 17‐fold increases in brightness at 10 V. Variations in hole‐injection and turn‐on voltage between the different TPD‐based molecules are attributed to the position of alkyl‐spacers within the molecules.     

Amino N‐Oxide Functionalized Conjugated Polymers and their Amino‐Functionalized Precursors: New Cathode Interlayers for High‐Performance Optoelectronic Devices

A series of amino N‐oxide functionalized polyfluorene homopolymers and copolymers (PNOs) are synthesized by oxidizing their amino functionalized precursor polymers (PNs) with hydrogen peroxide. Excellent solubility in polar solvents and good electron injection from high work‐function metals make PNOs good candidates for interfacial modification of solution processed multilayer polymer light‐emitting diodes (PLEDs) and polymer solar cells (PSCs). Both PNOs and PNs are used as cathode interlayers in PLEDs and PSCs. It is found that the resulting devices show much better performance than devices based on a bare Al cathode. The effect of side chain and main chain variations on the device performance is investigated. PNOs/Al cathode devices exhibit better performance than PNs/Al cathode devices. Moreover, devices incorporating polymers with para‐linkage of pyridinyl moieties exhibit better performance than those using polymers with meta‐linked counterparts. With a poly[(2,7‐(9,9‐bis(6‐(N,N‐diethylamino)‐hexyl N‐oxide)fluorene))‐alt‐(2,5‐pyridinyl)] (PF6NO25Py) cathode interlayer, the resulting device exhibits a luminance efficiency of 16.9 cd A^?1 and a power conversion efficiency of 6.9% for PLEDs and PSCs, respectively. These results indicate that PNOs are promising new cathode interlayers for modifying a range of optoelectronic devices.     

Enhanced Hole Injection into Amorphous Hole‐Transport Layers of Organic Light‐Emitting Diodes Using Controlled p‐Type Doping

We demonstrate enhanced hole injection and lowered driving voltage in vacuum‐deposited organic light‐emitting diodes (OLEDs) with a hole‐transport layer using the starburst amine 4,4′,4″‐tris(N,N‐diphenyl‐amino)triphenylamine (TDATA) p‐doped with a very strong acceptor, tetrafluoro‐tetracyano‐quinodimethane (F₄‐TCNQ) by controlled coevaporation. The doping leads to high conductivity of doped TDATA layers and a high density of equilibrium charge carriers, which facilitates hole injection and transport. Moreover, multilayer OLEDs consisting of double hole‐transport layers of thick p‐doped TDATA and a thin triphenyl‐diamine (TPD) interlayer exhibit very low operating voltages.     

Electrophosphorescent Devices Based on Cationic Complexes: Control of Switch‐on Voltage and Efficiency Through Modification of Charge Injection and Charge Transport

This paper reports an analysis of the properties of polymer light‐emitting devices (PLEDs) doped with iridium complexes. Devices based on charged and neutral complexes doped into poly(vinylcarbazole) (PVK) are presented, and the role of the ions and the charge‐transport properties of the complexes are discussed. In devices with the charged complexes, the concentration of the complex is found to have a profound effect on both the switch‐on voltage and the efficiency. At higher doping concentrations the efficiency is increased and the switch‐on voltage decreased. The increase in efficiency and decrease in switch‐on voltage at higher dopant concentration are found to be due to an alternative charge transport path via the iridium dopant [Ir(bpy)]⁺ (bis(2‐phenylpyridine‐C²,N′)(2,2′‐bipyridine)iridium hexafluorophosphate). However, at lower concentrations the complex becomes an electron trap and the efficiency is reduced. The devices are found to be significantly less efficient than those with neutral complexes. This difference is attributed to the ionic content and the charge trapping properties of the charged complexes. The low efficiency of the charged‐complex‐based devices could be overcome by utilizing a hole‐blocking layer; devices with efficiencies as high as 23 cd A^–1 were obtained.     

Alternating‐Current MXene Polymer Light‐Emitting Diodes

MXenes (Ti₃C₂) are 2D transition‐metal carbides and carbonitrides with high conductivity and optical transparency. However, transparent MXene electrodes suitable for polymer light‐emitting diodes (PLEDs) have rarely been demonstrated. With the discovery of the excellent electrical stability of MXene under an alternating current (AC), herein, PLEDs that employ MXene electrodes and exhibit high performance under AC operation (AC MXene PLEDs) are presented. The PLED exhibits a turn‐on voltage, current efficiency, and brightness of 2.1 V, 7 cd A^?1, and 12 547 cd m^?2, respectively, when operated under AC with a frequency of 1 kHz. The results indicate that the undesirable electric breakdown associated with heat arising from the poor interface of the MXene with a hole transport layer in the direct‐current mode is efficiently suppressed by the transient injection of carriers accompanied by the alternating change of the electric polarity under the AC, giving rise to reliable light emission with a high efficiency. The solution‐processable MXene electrode can be readily fabricated on a flexible polymer substrate, allowing for the development of a mechanically flexible AC MXene PLED with a higher performance than flexible PLEDs employing solution‐processed nanomaterial‐based electrodes such as carbon nanotubes, reduced graphene oxide, and Ag nanowires.     

Self‐Organized Gradient Hole Injection to Improve the Performance of Polymer Electroluminescent Devices

A new approach to forming a gradient hole‐injection layer in polymer light‐emitting diodes (PLEDs) is demonstrated. Single spin‐coating of hole‐injecting conducting polymer compositions with a perfluorinated ionomer results in a work function gradient through the layer formed by self‐organization, which leads to remarkably efficient single‐layer PLEDs (ca. 21 cd A^–1). The device lifetime is significantly improved (ca. 50 times) compared with the conventional hole‐injection layer, poly(3,4‐ethylenedioxythiophene)/poly(styrene sulfonate). These results are a good example for demonstrating that the shorter lifetime of PLEDs compared with small‐molecule‐based organic LEDs (SM‐OLEDs) is not mainly due to the inherent degradation of the polymeric emitter itself. Hence, the results open the way to further improvements of PLEDs for real applications to large‐area, high‐resolution, and full‐color flexible displays.     

Coordinatable and High Charge‐Carrier‐Mobility Water‐Soluble Conjugated Copolymers for Effective Aqueous‐Processed Polymer–Nanocrystal Hybrid Solar Cells and OFET Applications

A water‐soluble conjugated polymer (WCP) poly[(3,4‐dibromo‐2,5‐thienylene vinylene)‐co‐(p‐phenylene‐vinylene)] (PBTPV), containing thiophene rings with high charge‐carrier mobility and benzene rings with excellent solubility is designed and prepared through Wessling polymerization. The PBTPV precursor can be easily processed by employing water or alcohols as the solvents, which are clean, environmentally friendly, and non‐toxic compared with the highly toxic organic solvents such as chloroform and chlorobenzene. As a novel photoelectric material, PBTPV presents excellent hole‐transport properties with a carrier mobility of 5 × 10^?4 cm² V^?1 s^?1 measured in an organic field‐effect transistor device. By integrating PBTPV with aqueous CdTe nanocrystals (NCs) to produce the active layer of water‐processed hybrid solar cells, the devices exhibit effective power conversion efficiency up to 3.3%. Moreover, the PBTPV can form strong coordination interactions with the CdTe NCs through the S atoms on the thiophene rings, and effective coordination with other nanoparticles can be reasonably expected.     

Conjugated Small Molecule for Efficient Hole Transport in High‐Performance p‐i‐n Type Perovskite Solar Cells

The π‐conjugated organic small molecule 4,4′‐cyclohexylidenebis[N,N‐bis(4‐methylphenyl) benzenamine] (TAPC) has been explored as an efficient hole transport material to replace poly(3,4‐ethylenedio‐xythiophene):poly(styrenesulfonate) (PEDOT:PSS) in the preparation of p‐i‐n type CH₃NH₃PbI₃ perovskite solar cells. Smooth, uniform, and hydrophobic TAPC hole transport layers can be facilely deposited through solution casting without the need for any dopants. The power conversion efficiency of perovskite solar cells shows very weak TAPC layer thickness dependence across the range from 5 to 90 nm. Thermal annealing enables improved hole conductivity and efficient charge transport through an increase in TAPC crystallinity. The perovskite photoactive layer cast onto thermally annealed TAPC displays large grains and low residual PbI₂, leading to a high charge recombination resistance. After optimization, a stabilized power conversion efficiency of 18.80% is achieved with marginal hysteresis, much higher than the value of 12.90% achieved using PEDOT:PSS. The TAPC‐based devices also demonstrate superior stability compared with the PEDOT:PSS‐based devices when stored in ambient circumstances, with a relatively high humidity ranging from 50 to 85%.     

Highly Efficient Hole Injection Using Polymeric Anode Materials for Small‐Molecule Organic Light‐Emitting Diodes

A novel, highly efficient hole injection material based on a conducting polymer polythienothiophene (PTT) doped with poly(perfluoroethylene‐perfluoroethersulfonic acid) (PFFSA) in organic light‐emitting diodes (OLEDs) is demonstrated. Both current–voltage and dark‐injection‐current transient data of hole‐only devices demonstrate high hole‐injection efficiency employing PTT:PFFSA polymers with different organic charge‐transporting materials used in fluorescent and phosphorescent organic light‐emitting diodes. It is further demonstrated that PTT:PFFSA polymer formulations applied as the hole injection layer (HIL) in OLEDs reduce operating voltages and increase brightness significantly. Hole injection from PTT:PFFSA is found to be much more efficient than from typical small molecule HILs such as copper phthalocyanine (CuPc) or polymer HILs such as polyethylene dioxythiophene: polystyrene sulfonate (PEDOT‐PSS). OLED devices employing PTT:PFFSA polymer also demonstrate significantly longer lifetime and more stable operating voltages compared to devices using CuPc.     

Eleven‐Membered Fused‐Ring Low Band‐Gap Polymer with Enhanced Charge Carrier Mobility and Photovoltaic Performance

A multi‐ring, ladder‐type low band‐gap polymer (PIDTCPDT‐DFBT) is developed to show enhanced light harvesting, charge transport, and photovoltaic performance. It possesses excellent planarity and enhanced effective conjugation length compared to the previously reported fused‐ring polymers. In order to understand the effect of extended fused‐ring on the electronic and optical properties of this polymer, a partially fused polymer PIDTT‐T‐DFBT is also synthesized for comparison. The fully rigidified polymer provides lower reorganizational energy, resulting in one order higher hole mobility than the reference polymer. The device made from PIDTCPDT‐DFBT also shows a quite promising power conversion efficiency of 6.46%. Its short‐circuit current (14.59 mA cm^?2) is also among the highest reported for ladder‐type polymers. These results show that extending conjugation length in fused‐ring ladder polymers is an effective way to reduce band‐gap and improve charge transport for efficient photovoltaic devices.     

Boosting the Charge Transport Property of Indeno[1,2‐b]fluorene‐6,12‐dione though Incorporation of Sulfur‐ or Nitrogen‐Linked Side Chains

Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b ]fluorene‐6,12‐dione ( IFD )‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10^?7 cm² V^?1 s^?1. In contrast, the hole mobility is dramatically increased to 1.03 cm² V^?1 s^?1 by replacing the butyl units with dibutylamino groups ( DBA‐IFD ), while the butylthio‐modified IFD ( BT‐IFD ) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm² V^?1 s^?1, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.     

Interface Modification to Improve Hole‐Injection Properties in Organic Electronic Devices

The performance of organic electronic devices is often limited by injection. In this paper, improvement of hole injection in organic electronic devices by conditioning of the interface between the hole‐conducting layer (buffer layer) and the active organic semiconductor layer is demonstrated. The conditioning is performed by spin‐coating poly(9,9‐dioctyl‐fluorene‐co‐N‐ (4‐butylphenyl)‐diphenylamine) (TFB) on top of the poly(3,4‐ethylene dioxythiophene): poly(styrene sulfonate) (PEDOT:PSS) buffer layer, followed by an organic solvent wash, which results in a TFB residue on the surface of the PEDOT:PSS. Changes in the hole‐injection energy barriers, bulk charge‐transport properties, and current–voltage characteristics observed in a representative PFO‐based (PFO: poly(9,9‐dioctylfluorene)) diode suggest that conditioning of PEDOT:PSS surface with TFB creates a stepped electronic profile that dramatically improves the hole‐injection properties of organic electronic devices.     

Improved Operational Stability of Polymer Light‐Emitting Diodes Based on Silver Nanowire Electrode Through Pre‐Bias Conditioning Treatment

For the first time, highly efficient and flexible polymer light emitting diodes (PLEDs) based on silver nanowire (AgNW) electrode, with improved operational stability by simply applying pre‐bias conditioning treatment, are demonstrated. Reverse bias conditioning performed before J–V–L measurement of the PLEDs enables the rough AgNW networks to function properly as a bottom electrode by stabilizing current characteristics, and the devices continue to show consistent operational performances. Conditions of applied bias and thicknesses of active layer are controlled for optimization and it is found that high reverse voltage is required to obtain current stabilization. Adequate thickness of polymer is also necessary to avoid breakdown induced by reverse bias. The essential effect of pre‐bias conditioning on the improved performances of PLEDs is investigated, and it is found that morphological change of AgNW networks contribute to the improvement in device performance. Some of the AgNWs that appear to be pathway of leakage current are deformed, and surface roughness (RMS) of the AgNW film is decreased while the sheet resistance of the film is maintained when the reverse bias conditioning is applied. It is also revealed that pre‐bias conditioning is independent from directionality of the applied bias when utilizing insulating polymer sandwiched between two electrodes.     

Effect of Non‐Chlorinated Mixed Solvents on Charge Transport and Morphology of Solution‐Processed Polymer Field‐Effect Transistors

Using non‐chlorinated solvents for polymer device fabrication is highly desirable to avoid the negative environmental and health effects of chlorinated solvents. Here, a non‐chlorinated mixed solvent system, composed by a mixture of tetrahydronaphthalene and p­‐xylene, is described for processing a high mobility donor‐acceptor fused thiophene‐diketopyrrolopyrrole copolymer (PTDPPTFT4) in thin film transistors. The effects of the use of a mixed solvent system on the device performance, e.g., charge transport, morphology, and molecular packing, are investigated. p‐Xylene is chosen to promote polymer aggregation in solution, while a higher boiling point solvent, tetrahydronaphthalene, is used to allow a longer evaporation time and better solubility, which further facilitates morphological tuning. By optimizing the ratio of the two solvents, the charge transport characteristics of the polymer semiconductor device are observed to significantly improve for polymer devices deposited by spin coating and solution shearing. Average charge carrier mobilities of 3.13 cm² V^?1 s^?1 and a maximum value as high as 3.94 cm² V^?1 s^?1 are obtained by solution shearing. The combination of non‐chlorinated mixed solvents and the solution shearing film deposition provide a practical and environmentally‐friendly approach to achieve high performance polymer transistor devices.     

Highly Efficient Charge Transport in a Quasi‐Monolayer Semiconductor on Pure Polymer Dielectric

The study of monolayer organic field‐effect transistors (MOFETs) provides an effective way to investigate the intrinsic charge transport of semiconductors. To date, the research based on organic monolayers on polymeric dielectrics lays far behind that on inorganic dielectrics and the realization of a bulk‐like carrier mobility on pure polymer dielectrics is still a formidable challenge for MOFETs. Herein, a quasi‐monolayer coverage of pentacene film with orthorhombic phase is grown on the poly (amic acid) (PAA) dielectric layer. More significantly, charge density redistribution occurs at the interface between the pentacene and PAA caused by electron transfer from pentacene to the PAA dielectric layer, which is verified by theoretical simulations and experiments. As a consequence, an enhanced hole accumulation layer is formed and pentacene‐based MOFETs on pure polymer dielectrics exhibit bulk‐like carrier mobilities of up to 13.7 cm² V^?1 s^?1 from the saturation region at low V_GS, 9.1 cm² V^?1 s^?1 at high V_GS and 7.6 cm² V^?1 s^?1 from the linear region, which presents one of the best results of previously reported MOFETs so far and indicates that the monolayer semiconductor growing on pure polymer dielectric could produce highly efficient charge transport.     

Bright Blue Solution Processed Triple‐Layer Polymer Light‐Emitting Diodes Realized by Thermal Layer Stabilization and Orthogonal Solvents

The realization of fully solution processed multilayer polymer light‐emitting diodes (PLEDs) constitutes the pivotal point to push PLED technology to its full potential. Herein, a fully solution processed triple‐layer PLED realized by combining two different deposition strategies is presented. The approach allows a successive deposition of more than two polymeric layers without extensively redissolving already present layers. For that purpose, a poly(9,9‐dioctyl‐fluorene‐co‐N‐(4‐butylphenyl)‐diphenylamine) (TFB) layer is stabilized by a hard‐bake process as hole transport layer on top of poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). As emitting layer, a deep blue emitting pyrene‐triphenylamine copolymer is deposited from toluene solution. To complete the device assembly 9,9‐bis(3‐(5′,6′‐bis(4‐(polyethylene glycol)phenyl)‐[1,1′:4′,1″‐terphenyl]‐2′‐yl)propyl)‐9′,9′‐dioctyl‐2,7‐polyfluorene (PEGPF), a novel polyfluorene‐type polymer with polar sidechains, which acts as the electron transport layer, is deposited from methanol in an orthogonal solvent approach. Atomic force microscopy verifies that all deposited layers stay perfectly intact with respect to morphology and layer thickness upon multiple solvent treatments. Photoelectron spectroscopy reveals that the offsets of the respective frontier energy levels at the individual polymer interfaces lead to a charge carrier confinement in the emitting layer, thus enhancing the exciton formation probability in the device stack. The solution processed PLED‐stack exhibits bright blue light emission with a maximum luminance of 16 540 cd m^?2 and a maximum device efficiency of 1.42 cd A^?1, which denotes a five‐fold increase compared to corresponding single‐layer devices and demonstrates the potential of the presented concept.     

Solution‐Processed Monolayer Organic Crystals for High‐Performance Field‐Effect Transistors and Ultrasensitive Gas Sensors

This work innovatively develops a dual solution‐shearing method utilizing the semiconductor concentration region close to the solubility limit, which successfully generates large‐area and high‐performance semiconductor monolayer crystals on the millimeter scale. The monolayer crystals with poly(methyl methacrylate) encapsulation show the highest mobility of 10.4 cm² V^?1 s^?1 among the mobility values in the reported solution‐processed semiconductor monolayers. With similar mobility to multilayer crystals, light is shed on the charge accumulation mechanism in organic field‐effect transistors (OFETs), where the first layer on interface bears the most carrier transport task, and the other above layers work as carrier suppliers and encapsulations to the first layer. The monolayer crystals show a very low dependency on channel directions with a small anisotropic ratio of 1.3. The positive mobility–temperature correlation reveals a thermally activated carrier transport mode in the monolayer crystals, which is different from the band‐like transport mode in multilayer crystals. Furthermore, because of the direct exposure of highly conductive channels, the monolayer crystal based OFETs can sense ammonia concentrations as low as 10 ppb. The decent sensitivity indicates the monolayer crystals are potential candidates for sensor applications.