UV-vis and photoluminescent spectra of TiO<Subscript>2</Subscript> films

TiO₂ fims have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0. 10 Pa.to 0.65 Pa. The transmittance (UV-vis) and photoluminescence (PL) spectra of the films were recorded. The results of the UV-vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O₂)≥0.15 Pa, the band gap increased from 3.48 eV to 3.68eV for direct transition and from 3.27 eV to 3.34 eV for indirect transition with increasing the oxygen partial pressure. The PL spectra show convincingly that the transition for films was indirect, and there were some oxygen defect energy levels at the band gap of the films. With increasing the O₂ partial pressure, the defect energy levels decreased. For the films sputtered at 0.35 and 0.65 Pa there were two defect energy levels at 2.63 eV and 2.41 eV, corresponding to 0.72 eV and 0.94 eV below the conduction band for a band gap of 3.35 eV, respectively. For the films sputtered at 0.10 Pa and 0.15 Pa, there was an energy band formed between 3.12 eV and 2.06 eV, corresponding to 0.23 eV and 1.29 eV below the conduction band. ZHAO Qing-nan : Born in 1963 Funded by Natural Science Foundation of Hubei Province, China.     

溶胶凝胶法制备透明氧化铝薄膜及光学性能

以异丙醇铝为先驱体,采用溶胶凝胶方法制备了透明氧化铝薄膜;并采用DTA-TG,XRD, UV-vis分光光度计和PL光谱等测试手段对氧化铝薄膜进行表征.研究结果表明, 氧化铝薄膜(膜厚为100 nm) 在紫外到近红外范围内具有高的透射性,750 ℃热处理后氧化铝薄膜的光透射性最好;氧化铝薄膜在360-600 nm波长范围具有一个宽的蓝色发光带,且氧化铝膜的光致发光强度和峰位与热处理温度和激发光波长有关, 在345 nm 波长激发下,500 ℃热处理后氧化铝薄膜的发光强度最强;氧化铝薄膜的蓝色发光由氧空位缺陷(F+色心)引起.     

W掺杂量对非晶态TiO_2:W薄膜光学带隙的影响

在不同的W靶溅射功率下,用反应磁控溅射法在载玻片上制备了TiO2:W薄膜,并对样品进行了XRD,STS和UV-V is分析.结果表明试样为非晶态;W靶溅射功率为30 W时,带隙为2.75eV;W靶溅射功率为100 W时,带隙为3.02 eV;W靶溅射功率为150 W时,带隙能为2.92 eV.STS分析结果表明,在样品的禁带中产生了新的能级,能级宽度为0.83 eV.     

磁控溅射制备Ti-Zn-O复合薄膜及其光学性质研究

TiO2是作为一种宽禁带半导体材料可作为紫外器件,但因其间接带隙结构、禁带宽度仅为3.0eV等特点,严重影响其应用范围。本文利用共溅射技术,通过Zn掺杂,在K9玻璃基底上制备了Ti-Zn-O复合薄膜,并研究了Zn溅射功率对其结构及光学性质的影响。结果显示：所制备的薄膜为ZnTiO3和不饱和TiO2的复合结构,随着Zn粒子的溅射能量增加,晶粒尺寸和表面粗糙度增加,并可将薄膜本征吸收边蓝移至3.61eV。     

W掺杂量对非晶态Ti02：W薄膜光学带隙的影响

在不同的W靶溅射功率下，用反应磁控溅射法在载玻片上制备了TiO2：W薄膜，并对样品进行了XRD，STS和UV-Vis分析，结果表明试样为非晶态；w靶溅射功率为30w时，带隙为2．75eV；W靶溅射功率为100W时，带隙为3．02eV；W靶溅射功率为150W时，带隙能为2．92eV．STS分析结果表明，在样品的禁带中产生了新的能级，能级宽度为0．83eV．     

Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

ZnO thin films were prepared by direct current（DC） reactive magnetron sputtering under different oxygen partial pressures And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy（Vo）, zinc vacancy（VZn）, antisite oxygen（OZn）, antisite zinc（Zno）, interstitial oxygen（Oi） and interstitial zinc（Zni） were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.     

First principles study on electronic structure and optical properties of quaternary arsenide oxides YZnAsO and LaZnAsO

The electronic structure and optical properties of the tetragonal phase quaternary arsenide oxides YZnAsO and LaZnAsO were studied using density-functional theory(DFT) within generalized gradient approximation(GGA).The band structure along the higher symmetry axes in the Brillouin zone,the density of states(DOS) and the partial density of states(PDOS) were presented.The calculated energy band structures show that both YZnAsO and LaZnAsO are indirect gap semiconductors with band gap of 1.173 1 eV and 1.166 5...     

聚酰亚胺薄膜的光致发光研究

用光致发光测量装置和紫外—可见分光光度计测量了聚酰亚胺薄膜的发光强度、发光光谱和吸收光谱,研究了聚酰亚胺的光致发光性能.结果表明：聚酰亚胺的光致发光强度随测量时间呈指数衰减规律,发光光谱由荧光区、磷光区和红光及红外三个区域组成,其中700 nm附近的峰带相对较强.辐照时间增加,发光强度衰减减慢,发光峰带向长波方向移动.吸收带的最大吸收波长发生红移,由吸收边算得其光能隙约为2.76 eV.     

氧气分压对磁控溅射法制备ZAO膜的影响

利用直流磁控溅射技术在无机玻璃衬底上制备了ZAO透明导电薄膜。研究了溅射过程中氧气分压对ZAO薄膜的结构和光电特性的影响，结果表明：当氧气分压为0Pa时，薄膜结晶度良好，具有最小电阻率和较高的可见光透过率。     

Optical characterization of ZnO thin films deposited by RF magnetron sputtering method

This study investigated the process parameter effects on the structural and optical properties of ZnO thin film using radio frequency (RF) magnetron sputtering on amorphous glass substrates. The process parameters included RF power and working pressure. Results show that RF power was increased to promote the crystalline quality and decrease ZnO thin film defects. However, when the working pressure was increased to 3 Pa the ZnO thin film crystalline quality became worse. At a 200 W RF power and 1 Pa working pressure, the ZnO thin film with an optical band gap energy of 3.225 eV was obtained. Supported by the National Natural Science Foundation of China (Grant Nos. 50772006, 10432050)     

Impacts of hydrogen dilution on growth and optical properties of a-SiC:H films

Hydrogenatedamorphoussiliconcarbon(a-SiC:H)filmshavefoundagreatdealofusesinsolarcells[1],thinfilmtransistors[2],lightemittingdiodes[3],ultravioletimagesensors[4],microfluidiccoatings[5]andprotectivebarrierforcorrosionorthermaloxidation[6,7],becauseofitsuniquepropertiessuchaswideopticalbandgap,highmechanicalhardnessandchemicalstability.However,astheCcontentincreases,theelectronicandstructuralpropertiesofthefilmstendtobeinferior[8].Althoughinrecentyearsmuchworkhasbeendevotedtoexploringthedeposi…     

聚丙烯薄膜的光致发光

用紫外-可见分光光度计和光致发光测量装置测量了聚丙烯薄膜在氙灯辐照下的光致发光强度、发光光谱和吸收光谱,研究了聚丙烯薄膜的光致发光性能.结果表明:聚丙烯薄膜的光致发光强度随测量时间呈指数衰减,发光光谱在323.8 nm、395.6 nm、514.2 nm、561.8 nm、609.4 nm、680.7 nm和752.2 nm附近存在峰带,其中752.2 nm附近的峰带相对较强.辐照时间增加,发光峰强减弱,发光强度衰减变快,发光峰带向长波方向移动.吸收度随辐照时间的增长呈增色效应,吸收带的最大吸收波长发生红移,由吸收边算得其光能隙约为4.21 eV.     

ATaO_3（A=K,Na）电子结构和光学性质的第一性原理研究

采用第一性原理广义梯度近似（GGA）下的全电势线性缀加平面波（FP-LAPW）方法计算出立方相ATaO3（A=K,Na）的电子能带结构、态密度,发现了其光学性质.通过对两种材料的对比分析发现,KTaO3和NaTaO3价带顶均出现在0.15089eV处,KTaO3的导带底在2.02849eV处,NaTaO3的导带底在2.27339eV处,NaTaO3比KTaO3的导带底高,因而禁带宽度较大;NaTaO3中Ta5d电子和O2p电子之间的轨道杂化比KTaO3中的轨道杂化弱,Na的粒子性较K更强,因此,NaTaO3的光催化活性明显大于KTaO3.     

Al掺杂对ZnO薄膜结构和光学性能的影响

研究了Al掺杂对采用直流磁控溅射方法制备的ZnO薄膜结构及光学性能的影响。X射线衍射结果揭示薄膜具有良好的C轴择优取向生长特性,同时,衬底温度对它们的透射谱和荧光谱有着明显影响,所有薄膜都有大于86%的可见光透过率和陡峭的本征吸收边,但ZAO薄膜的光学透过率略低。Al掺杂导致了更宽的光学带隙,光致发光光谱显示ZnO具有较强的近带本征吸收峰和深能级发射峰,但Al掺杂使得深能级发射峰降低。随着衬底温度的升高,近带边吸收峰蓝移,与光学带隙Eg变化趋势一致。     

Strain effect on the electronic properties of III-nitride nanosheets:Ab-initio study

In this study the structural and electronic properties of III-nitride monolayers XN(X=B, Al, Ga and In) under different percentages of homogeneous and shear strain are investigated using the full potential linearized augmented plane wave within the density functional theory. Geometry optimizations indicate that GaN and InN monolayers get buckled under compressive strain.Our calculations show that the free-strains of these four monolayers have an indirect band gap. By applying compressive biaxial strain, a transition from indirect to direct band gap occurs for GaN and InN, while the character of band gap for BN and AlN is not changed. Under tensile strain, only BN monolayer behaves as direct band gap semiconductor. In addition, when the shear strain is applied, only InN undergoes an indirect to direct band gap transition. Furthermore, the variations of band gap versus strain for III-nitride monolayers have been calculated. When a homogeneous uniform strain, in the range of [.10%, +10%], is applied to the monolayers, the band gap can be tuned for from 3.92 eV to 4.58 eV for BN, from 1.67 eV to 3.46 eV for AlN, from0.24 eV to 2.79 eV for GaN and from 0.60 eV to 0.90 eV for InN.     

等离子束辅助沉积制备ZnO薄膜的特性研究

采用等离子束辅助沉积的方法在n-Si(001)衬底上制备出ZnO薄膜。X射线衍射谱显示，所制备的ZnO薄膜有较强的(002)晶面衍射峰，表明ZnO薄膜为c轴择优取向生长的，并且随着退火温度升高，晶粒逐渐增大，衍射峰逐渐增强。光致发光谱测量发现，样品分别在3．28eV和2．48eV存在紫外发射和深能级发射两个较强的发射峰，并且随着退火温度升高，深能级发射逐渐减弱，紫外发射峰得到进一步改善。四探针测试电阻率结果表明，随着退火温度的升高，ZnO薄膜的电阻率呈线性增加。     

AlN能带及态密度的密度泛函理论研究

文章采用基于密度泛函理论的平面波超软赝势法计算了A lN晶体的能带结构和态密度曲线。研究表明,A lN的价带由-15.3eV－-12.3eV的下价带和-6.2eV－0eV的上价带区组成,价带顶出现三个子带：简并的重空穴、轻空穴和自旋-轨道耦合所分裂出来的劈裂带（距带顶0.2eV）;导带主要是由A l的3s、3p态电子和N的2p态电子构成的;理论预测A lN价带空穴具有大的有效质量;A lN是一种直接宽禁带半导体,带隙为4.7eV,比较起来该结果优于一些文献中的计算值。     

Photocatalytic Activities of Amorphous TiO2-Cr Thin Films Prepared by Magnetron Sputtering

Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer,the photoluminescence (PL) and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.     

Preparation, characterization and photocatalytic activity of N-doped TiO_2 nanocrystals

N-doped TiO_2 nanocrystals were prepared using titanium alkoxide as precipitant with different proportional materials. The products were characterized by X-ray diffraction,scanning electron microscopy,transmission electron microscopy, and UV-vis diffuse reflectance spectra. It is confirmed experimentally that the photocatalytic activity of N-doped TiO_2 is much higher than that of Degussa P25, when used for the degradation of crystal violet.The degradation kinetics follows an apparent first-order reaction,which is consistent with a generally observed Langmuir-Hinshelwood mechanism. The doping of TiO_2 with nitrogen significantly increases the absorption in the region of visible light. The energy of the band gap of N-doped TiO_2 is 2.92 eV. The better performante of N-doped TiO_2 can be explained by the fact that it is also excited with longer-wavelength light.     

蒲公英状ZnO纳米结构的水热自组装及表征

以柠檬酸为络合剂，在250℃成功地制备出新颖的蒲公英状氧化锌纳米结构。采用X射线衍射（XRD）、扫描电镜（SEM）和紫外可见光谱（UV-vis）等手段对产物晶体结构、形貌、光学和电学性能进行了表征，结果表明产物是由无数的氧化锌纳米薄片围绕某中心自组装而成的蒲公英状纳米结构，禁带宽度（E6）约为3．61eV，并对该纳米结构的自组装机理做了初步探讨。