退火对Ar~+激光再结晶多晶硅/二氧化硅界面性质的影响

本文对CW Ar~+激光再结晶SOI结构材料进行了氢等离子体退火和CW CO_2激光退少.结果表明,两种退火方法都可以明显地降低背界面的界面态陷阱密度.氢等离子体处理对晶粒间界引入的界面态退火效果更显著,而CO_2激光辐照对应力引入的界面态退火作用更明显.     

硅中注砷的连续CO_2激光退火的研究

利用高功率连续CO_2激光定点辐照,对砷离子注入的硅片进行退火。实验结果表明晶格损伤得到了完全恢复,注入砷原子的替位率与电激活率高,还克服了激光聚焦扫描退火时引起硅片表面变形的问题。     

强CO_2激光辐照下离子注入Si反射率的动态干涉效应

本文从理论和实验研究了连续CO_2激光辐照下磷离子注入Si对He-Ne激光束反射率呈现的动态干涉效应。从反射强度随时间的变化看出,Si片离子注入层固相外延的速率在整个再结晶过程中是不均匀的。     

Heat-pulse annealing of arsenic-implanted silicon with a CW arc lamp

A new annealing method is introduced whereby a silicon wafer is irradiated by a short heat pulse generated by CW lamps. Results of the annealing process obtained from medium-dose arsenic-implanted silicon are similar to those obtained from nonmelting short heat treatments-complete activation of the implanted dopant with no diffusion or distortion of the impurity profile. Investigation of the crystal structure by means of TEM indicates a lack of any defects down to a resolution of 10 Å. Because of its simplicity, heat-pulse annealing has the potential of higher throughput in comparison to equivalent laser or electron-beam irradiation.     

Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films

In this work, a high power continuous-wave (CW) Nd:YAG laser was used for thermal treatment of inkjet-printed Ag films - resulting in the elimination of organic additives (dispersant, binder, and organic solvent) in the Ag ink and annealing of Ag nano-particles. By optimizing laser parameters such as laser power and defocusing value, the laser energy can be totally converted into heat energy, which is used for thermal treatment of inkjet-printed Ag films. This results in the microstructure and the resistivity of the films to be controlled. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristics of inkjet-printed Ag films was compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling images show that the laser annealed Ag films have large columnar grains and a dense void-free structure, while furnace annealed films have much smaller grains and exhibit void formation. As a result, the laser annealed films have better electrical properties (low resistivity) compared to furnace annealed samples.     

Ring oscillators fabricated in laser-annealed silicon-on-insulator

Both seven and eleven stage n-MOS ring oscillators with 6 µm channel length have been successfully fabricated in scanning. CW argon laser-annealed polycrystalline silicon islands, which are defined prior to the laser annealing step, on oxide substrates. The ring oscillators, which have a fan-out of three, have a switching delay per stage of 58 nsec and a power-delay product of about 7 pJ operating at a supply voltage (VDD) of 5 volts and switching between VDDand ground. The most serious difficulty encountered during circuit fabrication was the deformation of the silicon islands resulting from laser annealing with extensive laser power density.     

射频离子辐射损伤的激光退火

本文介绍了等离子刻蚀和去胶对MOS、MNOS电容器和双板晶体管所产生的辐射损伤的激光退火，用连续CO2激光器从背面照射蕊片，可以明显地降低各种MIS结构中的固定电荷和界面陷阱，完全消除辐射损伤，使被损伤的器件特性得到恢复并有所改善，使集成电路成品率明显提高。     

CW laser annealing of boron implanted polycrystalline silicon

The electrical characteristics have been measured on CW laser annealed boron implanted polycrystalline silicon layers. It is shown, that a resistivity can be obtained, which is only about double that of a single crystalline layer doped to the same level. By appropriate choice of doping and laser annealing parameters, a temperature coefficient close to zero can be achieved. It is also shown that laser irradiation can be used to trim a furnace annealed polysilicon resistor to a desired resistance value.     

Low-threshold laterally oxidized GaInP-AlGaInP quantum-well laserdiodes

Low-threshold, high-efficiency edge-emitting visible AIGaInP-GaInP laser diodes using a buried AlAs native oxides for carrier and optical confinement are described. The lasers incorporate a thin AlAs layer in the upper cladding region, which when laterally wet oxidized, forms a narrow aperture. The lasers operate with room temperature, continuous-wave (CW) threshold currents of 11 mA with external differential quantum efficiency of 34% per facet for an uncoated 300-μm-long 3.5-μm-wide device. As-fabricated lasers exhibited modest performance under CW operation. Post-fabrication annealing was shown to dramatically improve the device characteristics     

Millimeter-Wave Device Technology

We have investigated novel techniques for the fabrication of silicon IMPATT diodes for use at frequencies of 220 GHz and beyond. We report on diodes yielding 25 mW CW at 102 GHz with 2-percent conversion efficiency, and 16 mW CW at 132 GHz with 1-percent conversion efficiency. The basic techniques described are ion implantation, laser annealing, unique secondary-ion mass spectrometry (SIMS) profile diagnostics, and novel wafer thinning, yielding ultrathin, reproducible wafers. The utilization of these technologies, as they are further refined, can result in the development of silicon monolithic integrated sources.     

638 nm、532 nm 激光泵浦的连续波翠绿宝石激光器

报道了一种高功率、高光束质量的755 nm连续波翠绿宝石激光器。首先,对比研究了638 nm激光二极管（LDs）和532 nm固体激光器单端泵浦的翠绿宝石激光器。当638 nm LDs作为泵浦源时,得到的连续输出功率、光-光转换效率分别为3.9 W和19.7%。保持其他条件基本不变,将泵浦源换成532 nm激光器,得到的连续输出功率、光-光转换效率分别为2.1 W和10.0%。结果表明利用 638 nm LDs泵浦翠绿宝石可获得更高的激光功率和转换效率。此外,研究了638 nm LDs双端泵浦的翠绿宝石激光器,在755 nm处得到了6.2 W的连续输出功率,相应的光-光转换效率和斜效率分别为16.3%和24.2%,并且连续输出功率为5.0 W时的光束质量M2优于1.47,这是翠绿宝石激光器在近衍射极限下的最高连续输出功率。这种高功率、高光束质量的755 nm翠绿宝石激光器为连续波紫外激光器的研制提供了良好、稳定的基频源。     

Cu：KNSBN晶体中光折变波导诱导532nm连续光自泵浦相位共轭

在原来用８ｍＷ连续５３２ｎｍ激光不能产生自泵浦相应共轭的入射角下．先用锁模５３２ｎｍ的ｐｓ激光脉冲在Ｃｕ：ＫＮＳＢＮ晶体中预制一条光折变波导，就很容易用连续５３２ｎｍ激光形成自泵浦相位共轭。预制的光折变波导在一般照明条件下可保存３０ｍｉｎ以上。     

短脉冲和连续激光对太阳能电池的损伤对比

为了研究短脉冲激光和连续激光对太阳能电池损伤的差异,采用波段内的短脉冲激光和连续激光进行辐照单晶硅太阳能电池的实验。通过观察电池被两种激光辐照后的损伤形貌,结合分析太阳能电池的结构,得到了短脉冲激光和连续激光对太阳能电池造成的损伤形式和成因,对比了两种激光对电池的损伤差异。研究结果表明:波段内短脉冲激光和连续激光对太阳能电池的损伤主要是依靠热效应,其中短脉冲激光对太阳能电池的损伤形式主要是热力损伤,连续激光对太阳能电池的损伤形式是热熔损伤。     

Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact

We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.     

High-power and long-lifetime inGaN blue- violet laser diodes grown by molecular beam epitaxy

InGaN 405 nm multiple quantum well laser diodes grown by molecular beam epitaxy (MBE) with a continuous-wave (CW) lifetime of up to 42 h are reported. The CW threshold current density of the ridge waveguide laser diodes is 3.6 kA/cm² and the slope efficiency for uncoated facets is 0.42 W/A per facet with a maximum CW output power of 45 mW per facet. Statistical variation of CW lifetime with dissipated power is presented for MBE-grown laser diodes from five different wafers.     

激光再结晶和氢退火对多晶硅电学性质的影响

连续Ar+激光再结晶能使多晶硅的电阻率下降,迁移率显著增高,对离子注入剂量为5101151015cm-2的多晶硅经激光再结晶后再进行等离子氢退火,能使其电学性质得到进一步改善,更接近于单晶硅.掺杂浓度为11017cm-3时,电阻率从1.2cm下降到0.45cm,迁移率从 62cm2/Vs增高到 271cm2/Vs,电激活能从 0.03eV下降到-0.007eV,晶界陷阱态密度从3.71011cm-2下降到 1.71011cm-2)。本文在现有多晶硅导电模型的基础上.提出了大晶粒(L=15m)多晶硅的计算公式。结果表明,在掺杂浓度在1101611020cm-3的范围内,理论和实验符合较好。     

连续和脉冲共同泵浦的Nd~(3+):YAG激光器

我们(H.Salzmann,K.Hirsch博士等)在西德Stuttgart大学等离子体研究所完成了连续和脉冲同时泵浦的新型YAG激光器,现从技术方面对这种激光器作一介绍.     

序列脉冲激光产生的光压及其对原子束的冷却与减速效应

本文通过解双能级系统的密度矩阵方程,求出了序列脉冲激光的光压力,计算了光压对原子速度分布的影响,并与连续激光的作用进行了对比。结果表明:采用序列脉冲激光并适当选择调制函数参数,可比相同功率甚至功率增大1/2情况下的连续激光更为有效地使原子束减速和冷却。     

Frequency locking in double-pumped dye laser

A jet-stream dye laser was pumped simultaneously by a CW argon laser and a high-power xenon ion laser. The frequency and bandwidth of the pulsed radiation obtained were locked to the CW radiation inside the folded cavity.     

高重频人眼安全光参变振荡器实验研究

介绍了连续激光二极管抽运声光Q开关Nd:YAG激光器抽运的高重复频率1.57μm人眼安全光参变振荡器实验研究结果.采用连续激光二极管三侧面抽运Nd:YAG模块和QSGSU-6型小型声光Q开关,1.57μm光参变振荡谐振腔置于1.06μm Nd:YAG激光谐振腔内,非线性晶体为X切割的KTP晶体,利用Ⅱ类非临界相位匹配光参变振荡输出1.57μm波长激光.在重频1kHz~5 kHz时进行了初步实验,在重频3kHz时,获得1.57μm高重复频率激光最大输出功率480mW,最大峰值功率58.8kW,脉宽2.72ns,电光效率达2.6‰.试验结果表明,连续激光二极管抽运声光Q开关内腔光参变振荡器是获得高频人眼安全激光的一种有效途径.