基于单一PMOS差分对的轨到轨输入运算放大器设计

基于国内某CMOS工艺设计了一种单一PMOS差分对的轨到轨输入、恒跨导CMOS运算放大器。输入级电路采用折叠共源共栅结构,通过体效应动态调节输入管的阈值电压扩展共模输入范围到正负电源轨,恒定共模输入范围内的跨导,自级联电流镜有源负载将差分输入转换为单端输出;输出级电路采用AB类结构实现轨到轨输出,线性跨导环确定输出管的静态偏置电流。在5 V电源电压,2.5 V共模电压,1 MΩ负载条件下,经Spectre仿真验证,该运算放大器开环增益为119 dB,相位裕度为58°,共模输入范围为0.0027～4.995 V,共模范围内跨导变化小于3%,实现了轨到轨输入共模范围内的跨导恒定。     

基于单差分对输入级的新型轨到轨运算放大器设计

本文基于CMOS工艺设计了一种新型的轨到轨集成运算放大器。对比分析传统轨到轨输入级设计的优劣,该运放选择采用单差分对输入级结构,使用耗尽型NMOS管作为输入对管,利用耗尽型NMOS管的体效应以及对输入级电路结构的优化,实现轨到轨输入,以AB类输出级结构实现轨到轨输出。经过Cadence仿真验证,工作在5 V单电源供电下,共模输入电压范围可以实现满轨0～5 V,增益高达141.1 dB,带宽1.7 MHz,相位裕度55.4°,具有较低的输入失调电压264μV、输入偏置电流9 pA。整体电路实现了近乎满轨的轨到轨的输出电压摆幅,达到轨到轨运算放大器的设计要求。     

一种高性能LVDS收发器的设计

基于0.18μm SiGe BiCMOS工艺,设计了一种用于10位200 MHz高速流水线模数转换器的CMOS LVDS收发电路。该收发电路由发射器(TX)和接收器(RX)组成。发射器通过带共模反馈的闭环控制电路,将0~3.3 V的CMOS信号转换成(1.2±0.35)V的LVDS信号。接收器采用一个轨至轨预运算放大器保证LVDS信号的完整接收,并实现一定的增益,之后由迟滞比较器和输出缓冲器实现对共模噪声的抑制以及信号驱动能力的提高,最终正确恢复出CMOS信号。仿真结果表明,在400 MHz脉冲输入下,收发器可以稳定工作在3.3 V电源电压,总功耗仅为22.4 mW。     

一种高共模抑制比轨到轨全差分运算放大器

针对传统全差分运算放大器电路存在输入输出摆幅小和共模抑制比低的问题,提出了一种高共模抑制比轨到轨全差分运算放大器电路。电路的输入级采用基于电流补偿技术的互补差分输入对,实现较大的输入信号摆幅;中间级采用折叠式共源共栅结构,获得较大的增益和输出摆幅;输出级采用共模反馈环路控制的A类输出结构,同时对共模反馈环路进行密勒补偿,提高电路的共模抑制比和环路稳定性。提出的全差分运算放大器电路基于中芯国际(SMIC) 0.13μm CMOS工艺设计,结果表明,该电路在3.3 V供电电压下,负载电容为5 pF时,可实现轨到轨的输入输出信号摆幅;当输入共模电平为1.65 V时,直流增益为108.9 dB,相位裕度为77.5°,单位增益带宽为12.71 MHz;共模反馈环路增益为97.7 dB,相位裕度为71.3°;共模抑制比为237.7 dB,电源抑制比为209.6 dB,等效输入参考噪声为37.9 nV/Hz^1/2@100 kHz。     

低功耗恒定跨导轨对轨运算放大器设计技术研究

为了解决轨对轨运算放大器输入级跨导随共模输入电压变化的影响,采用实时共模电压监测技术,动态跟踪轨对轨运放输入级的跨导变化,通过对偏置电流的高精度定量补偿,从而实现了对输入级跨导的恒定性控制。基于0.18μm CMOS工艺进行了具体电路的设计实现,结果表明:在电源电压3.3 V、负载电阻100Ω、负载电容1 nF的条件下,运放增益为148 dB、相位裕度为61°、功耗为39.6μW,共模输入范围高达0~3.3 V,输入级跨导变化率仅为2.1%。     

一种宽带恒定跨导轨对轨运算放大器的设计

介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷，在各种共模输入电平下有着几乎恒定的跨导，使频率补偿更容易实现，且由于其工作原理与MOS晶体管的C—V解析关系无关，对制造工艺依赖性小，适用于深亚微米工艺。在此基础上，设计出了一种宽带的运算放大器，该运算放大器具有轨对轨输入、输出能力，可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制，跨导和整体性能稳定，适于为更大规模的数字／模拟混合信号系统提供行为级模型。     

一种低失调CMOS轨到轨运算放大器研究

基于CMOS工艺设计了一款轨到轨运算放大器,整体电路包括偏置电路、输入级、输出级以及ESD保护电路。电路中的输入级使用了一种全新的架构,通过一对耗尽型NMOS管作为输入管,实现轨到轨输入,同时在输入级采用了共源共栅结构,能够提供较高的共模输入范围和增益;在输出级,为了得到满摆幅输出而采用了AB类输出级;同时ESD保护电路采用传统的GGMOS电路,耐压大于2 kV。经过仿真后可知,电路的输入偏置电流为150 fA,在负载为100 kΩ的情况下,输出最高和最低电压可达距电源轨和地轨的20 mV范围内,当电源电压为5 V时能获得80 dB的CMRR和120 dB的增益,相位裕度约为50°,单位增益带宽约为1.5 MHz。     

一种低电压恒定跨导轨到轨运算放大器的设计

设计了一种低电压恒定跨导的轨到轨运算放大器,作为误差放大器用在BUCK型DC-DC上实现对输出电压的调节。该运算放大器采用两级结构,输入级采用互补差分对的结构,实现了轨到轨电压的输入,并且利用2倍电流镜技术实现了跨导的恒定;输出级采用AB类放大器的结构,提高了输出电压摆幅和效率,实现了轨到轨电压的输出。该电路基于CSMC 0.25μm EN BCDMOS工艺进行设计,仿真结果表明:电源电压为2.8 V时,在输出端负载电容为160 pF、负载电阻为10 kΩ的情况下,增益为124 dB,单位增益带宽积为5.76 MHz,相位裕度为59.9℃,输入跨导为5.2 mΩ~(-1),共模抑制比为123 dB,输入共模信号范围为0～2.8V,输出电压摆幅为0～2.8 V。     

低压工作的轨到轨输入／输出缓冲级放大器

本文提出了一种低压工作的轨到轨输入／输出缓冲级放大器。利用电阻产生的输入共模电平移动,该放大器可以在低于传统轨到轨输入级所限制的最小电压下工作,并在整个输入共模电压范围内获得恒定的输入跨导;它的输出级由电流镜驱动,实现了轨到轨电压输出,具有较强的负载驱动能力。该放大器在CSMCO．6-μmCMOS数模混合工艺下进行了HSPICE仿真和流片测试,结果表明：当供电电压为5V,偏置电流为60uA,负载电容为10pF时,开环增益为87．7dB,功耗为579uw,单位增益带宽为3．3MHz;当该放大器作为缓冲级时,输入3VPP10kHz正弦信号,总谐波失真THD为53．2dB。     

一种应用于高速数据通信的LVDS接收器设计

提出了一种应用于高速数据通讯的低电压差分信号(LVDS)接收器电路设计,符合IEEEStd.1596.3-1996(LVDS)标准,有效地解决了传统电路在低电源电压下不能满足标准对宽共模范围的要求以及系统的高速低功耗要求。电路采用65nm 1P9M CMOS Logic工艺设计实现,仿真结果表明该接收器电路能在符合标准的0V-2.4V的宽输入共模电平下稳定工作,在电源电压为2.5V的工作条件下,数据传输速率可以达到2Gbps,平均功耗仅为3mW。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks