Analysis and Design of Current Probe Transition From Grounded Coplanar to Substrate Integrated Rectangular Waveguides

The transition between a grounded coplanar waveguide (GCPW) and a substrate integrated rectangular waveguide (SIRW) is investigated in this paper. The proposed scheme makes use of a current probe to transfer power between the two dissimilar transmission lines. A computer-aided-design-oriented analytical model is developed in order to optimize the geometrical dimensions of the transition. By using the GCPW instead of the microstrip line to interface the SIRW, substrate thickness can be increased without incurring a penalty due to transmission loss. Therefore, it is possible to achieve higher$Q$components. Experiments at 28 GHz show that an effective bandwidth of 10% can easily be obtained. The insertion loss is less than 0.73 dB over the bandwidth of interest.     

Mode conversion at GCPW-to-microstrip-line transitions

Mode conversion at the transition between grounded coplanar waveguide (GCPW) and microstrip line is demonstrated. Experimental results show the effect of overmoding in a conductor-backed coplanar waveguide on the transition behavior. A simple micromachining solution is used to cancel the parasitic modes triggered by the transition in the GCPW feed line. This results in an insertion loss of 0.3 dB and a return loss better than -18 dB from 75 to 110 GHz. The transition can prove very useful for millimeter-wave packaging and interconnects     

新型宽带GCPW射频传输转换

本文提出了一种新型宽带GCPW(Grounded Coplanar Waveguide,地面共面波导)射频传输转换结构,用于解决两个不同平面背靠背式的GCPW射频传输转换。首先将GCPW转换为CPW,宽带共面波导的传输转换是通过金带连接的方式实现传输平面的转换。在工作频率为2GHz—17.5GHz,带宽为15.5GHz的条件下,这种传输转换形式实现了传输损耗小于0.5d B,回波损耗大于16.7d B。这种传输方式较好的解决了较大间距背靠背式GCPW射频信号的传输转换,而且过渡结构简单,尺寸小,工程上容易实现。     

40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

A simple circular-to-rectangular waveguide transition

We describe a novel one-step TE/sub 11/-mode circular waveguide to TE/sub 10/-mode rectangular waveguide transition. The primary advantage of this device over existing transitions is its ease of fabrication. We have incorporated our transition into a number of waveguide components operating at V-band. The transition's measured return loss exceeds 15 dB over a 12% bandwidth centered near 60 GHz.     

Millimeter-Wave Transition From Waveguide to Two Microstrip Lines Using Rectangular Patch Element

A millimeter-wave transition from a waveguide to two microstrip lines and the design methodology are proposed. A rectangular patch element in a short-terminated waveguide is analyzed by the cavity model of a patch antenna and the dyadic Green's function of the waveguide. The analysis points out that the rectangular patch element has an optimum width for wideband, which only has the function of the broad wall width of the waveguide. The transition also works as a divider. A numerical investigation of a transition having two microstrip lines validates the analytical model in terms of wideband, and indicates that the distance between the two microstrip lines has an optimum length for suppressing higher order modes. A prototype transition exhibits an insertion loss of 0.5 dB from 76 to 77 GHz, and a bandwidth of 6.9% (5.29 GHz) for the reflection coefficient below -15 dB for the waveguide port     

Ka-Band Four-Way Power Combiner Based on Multi-layer Substrate Integrated Waveguide

A novel millimeter-wave power divider/combiner based on rectangular waveguide to multi-layer substrate integrated waveguide (RWG—MLSIW) transition is proposed in this paper. The input signal can be divided into N way directly by using multi-layer substrate integrated waveguides stacked together and plugged into a normal rectangular waveguide. A four-way multi-layer SIW power combiner operating at Ka-band is designed, fabricated and measured. Good agreement between the experiments and the simulations can be observed, demonstrating 8 GHz bandwidth (from 29 to 37 GHz) with 15-dB input return loss.     

Broadband transition between half mode substrate integrated waveguide and rectangular waveguide

A broadband transition between a half mode substrate integrated waveguide and a rectangular waveguide with an antipodal fin-line in its quasi-TEM mode is presented. Experimental results show about 1.3 dB insertion loss and below 215 dB return loss for a back-toback double transition over 10 GHz bandwidth from 26.5 to 40 GHz (the single transition insertion loss is about 0.65 dB). The transition may be used in low-loss and low-noise front-end circuits of the microwave and millimetre-wave bands.     

Channel Dropping Filter for Millimeter-Wave Integrated Circuits

The dielectric waveguide structure finds various applications in integrated circuits for the millimeter-optical-frequency range. Many passive and active devices, using dielectric waveguide, have been developed. From the viewpoint of Iow-loss property, the dielectric rectangular waveguide seems to be more suitable for integrated circuits. This paper describes the design method and experimental results for channel dropping filter using dielectric rectangular waveguide. Some experimental investigations of the dielectric rectangular waveguide properties are also presented. The channel dropping loss of the filter is 1.5 dB at a channel center frequency of 52 GHz with a 180-MHz 3-dB bandwidth. Experimental results agree fairly well with the theoretical calculations.     

Integrated microstrip and rectangular waveguide in planar form

Usually transitions from microstrip line to rectangular waveguide are made with three-dimensional complex mounting structures. In this paper, a new planar platform is developed in which the microstrip line and rectangular waveguide are fully integrated on the same substrate, and they are interconnected via a simple taper. Our experiments at 28 GHz show that an effective bandwidth of 12% at 20 dB return loss is obtained with an in-band insertion loss better than 0.3 dB. The new transition allows a complete integration of waveguide components on substrate with MICs and MMICs     

Design and realization of low profile dual-wideband monopole antenna incorporating a novel ohm (Ω) shaped DMS and semi-circular DGS for wireless applications

In this paper, a compact microstrip line fed dual-wideband printed monopole antenna (PMA) for wireless communication applications is presented. The proposed antenna consists of an asymmetric rectangular patch via a microstrip-fed line, an ohm (Ω) shaped DMS loaded at the rectangular patch, and dual semi-circular shaped DGS embedded in the partial rectangular ground plane. The combination of an ohm shaped DMS and two semi-circular DGS is used to broaden the bandwidth of the two bands and improve the return loss for the desired antenna. The measured 10 dB bandwidth for return loss are achieved to be 21.52% (3.40–4.22 GHz) and 47.32% (5–8.1 GHz) in the lower and upper band, respectively which covers the bandwidth requirements of 5.2/5.8 GHz WLAN and 3.5/5.5 GHz Wi-MAX application bands. Furthermore, the proposed antenna has a very simple planar structure and occupies a small area of only 621 mm² (23 mm × 27 mm). The proposed antenna has a desirable VSWR level, radiation pattern, radiation efficiency and gain characteristics which are suitable for wireless communication applications.     

一种新型毫米波集成波导微带转换的分析与设计

提出一种新型集成于单层微带基片的毫米波集成波导微带转换 ,由一圆形微带谐振器、微带共面波导探针组成。利用全波分析软件对该转换器进行了分析计算、优化设计。测试了波导微带转换实物 ,结果表明 ,在Ka波段在 1 GHz频带内 ,该波导微带转换具有较低的插入损耗 ( <0 .4d B)和反射损耗 ( <-1 4d B)。可满足相关毫米波微带集成电路系统的应用要求。     

60 GHz band radial line slot array antenna fed by rectangularwaveguide

A single-layered radial line slot array (SL-RLSA) antenna etched on a substrate and fed by a rectangular waveguide is presented in the 60 GHz band. The design curves are obtained by an efficient electromagnetic coupling analysis using Ewald sum technique and Shanks' transformation. The antenna has rectangular waveguide feed structure using a rectangular waveguide-to-radial line transition. The prototype antenna of 10 cm diameter was tested and the gain of 30 dBi was measured at 60 GHz     

A planar probe double ladder waveguide power divider

The successful demonstration of a 1:4 power divider using microstrip probes and a WR-430 rectangular waveguide is presented. The 15-dB return loss bandwidth of the nonoptimized structure is demonstrated to be 22% and its 0.5-dB insertion loss bandwidth 26%. While realized through conventional machining, such a structure is assembled in a fashion consistent with proven millimeter and submillimeter-wave micromachining techniques. Thus, the structure presents a potential power dividing and power combining architecture, which through micromachining, may be used for applications well above 100GHz.     

A V-band planar narrow bandpass filter using a new type integrated waveguide transition

A surface mountable planar narrow bandpass filter is proposed and demonstrated at V-band. The filter is constructed using an integrated waveguide in an alumina substrate employing a novel microstrip line to waveguide transition. The insertion loss per one transition is less than 0.1 dB over 43 to 73 GHz. A fabricated three-pole Chebyshev filter exhibits an insertion loss of 3 dB with a 3.3% bandwidth at a center frequency of 62 GHz and the return loss is better than 15 dB in the passband.     

Ultra-Wideband CPW-to-Substrate Integrated Waveguide Transition Using an Elevated-CPW Section

In this letter, an elevated-coplanar waveguide (ECPW) is proposed for an intermediate section of a coplanar waveguide (CPW)-to-substrate integrated waveguide (SIW) transition. The ECPW is used to attain a gradual mode matching and to achieve the consequent wide bandwidth. The measurement results show 70% fractional bandwidth at 10 dB return loss and 0.9 dB insertion loss from 19 to 40 GHz. We expect that the proposed SIW transition plays an important role for the integration of high-Q SIW with CPW circuits, such as millimeter-wave system-in-package (SiP) using SIW circuits.      

All-planar dual-mode asymmetric filters at Ka-band

All-planar dual-mode inductive asymmetric filters utilizing new planar microstrip to dielectric-loaded rectangular waveguide transitions at Ka-band were presented and built in this work. The conventional, three-dimensional metallic rectangular waveguide dual-mode filters can be implemented into mature PCB technology with a much easier and lower-cost fabrication process on the basis of the all-planar feature of the transition. This work demonstrates two Ka-band filter examples with center frequency at 31 GHz and bandwidth at 1 GHz and 2 GHz. The measured minimum insertion loss of each case was, respectively, 2.68 and 1.12 dB, with greater than 10 dB return loss in the passband. Moreover, the measured side-band attenuation (near passband) is larger than 30 dB due to the transmission zeros at each side of the passband.     

Broadband substrate integrated waveguide to rectangular waveguide transition with fin-line

A novel broadband transition from a substrate integrated waveguide to a rectangle waveguide with an antipodal fin-line in its quasi-TE mode is presented. Impedance match and field mode gradual changing of transition circuits have been carefully analysed and performed. Experimental results show about a 1.6 dB insertion loss and greater than 12 dB return loss for back-to-back transitions over 10 GHz bandwidth from 26.5 to 40 GHz, so single transition insertion loss is about 0.8 dB. The transition is proposed for low-loss front-end circuits in the millimetre-wave band.     

Fabrication and Packaging of 40-Gb/s AlGaInAs Multiple-Quantum-Well Electroabsorption Modulated Lasers Based on Identical Epitaxial Layer Scheme

High-speed AlGaInAs multiple-quantum-well (MQW) electroabsorption modulated lasers (EMLs) based on an identical epitaxial layer (IEL) integration scheme are developed for 40-Gb/s optical fiber communication systems. A self-aligned planarization technique has been adopted to reduce the capacitance of the electroabsorption modulator (EAM). The IEL structure EML chips exhibit a small signal modulation bandwidth around 40 GHz. The influence of residual reflection at the modulator facet on the small signal modulation response is investigated. Submount containing a grounded coplanar waveguide (GCPW) transmission line is used for packaging the EML chips into transmitter modules. The optimization of the GCPW structure to suppress resonances in frequency response due to parallel-plate modes is presented. Clear eye opening under 40-Gb/s nonreturn-to-zero (NRZ) modulation has been demonstrated for the packaged EML module.     

用于系统级封装的毫米波介质填充波导的研究

基于不断发展的系统级封装技术,提出了一种用于芯片间高速互连的新型可集成的物理器件:硅基毫米波介质填充波导。文中阐述了该器件的物理原理,采用建模、仿真相结合的方法对该模块进行了结构设计,利用新的设计思路结合半导体工艺解决了毫米波互连结构内部的反射、电压驻波比(VSWR)、信号耦合、准TEM-TE-准TEM转换传输问题以及毫米波互连结构阵列中信号泄露的问题,并利用半导体与MEMS加工工艺加以实现。测试结果表明宽度为680μm的单通道矩形波导,-10 d B带宽为9.8 GHz,相对带宽为12.56%;传输损耗为1 d B/cm,工作频带内相邻波导之间串扰低于-40 d B,可以形成大阵列并进行集成,从而实现芯片间数据的并行传输。