Anion Diffusion in α-Cr2O3

Oxygen-18 exchange between gaseous oxygen, held at a pressure of 125 mm Hg in a Pt10Rh chamber, and spheres of α-Cr₂O₃ containing three or less grains was determined from 1100° to 1450°C. Isotope equilibrium on crystal surfaces appears to be quickly established, and the rate-determining factor is self-diffusion conforming to the relation D = 15.9 exp(-101,000/ RT) cm²sec⁻¹. Changing sphere diameters caused no detectable variation in diffusion coefficients. Anions are the much slower diffusing species in this oxide.     

Oxygen Mobility in Polycrystalline NiCr2O4 and α-Fe2O3

Oxygen diffusion coefficients have been determined for polycrystalline samples of NiCr₂O₄ and α-Fe₂O₃ by exchange measurements with oxygen gas containing the stable isotope¹⁸O, using mass spectrometer analysis. Oxygen diffusion in NiCr₂O₄ can be represented by the equation D = 0.017 exp (-65,400/RT); oxygen diffusion in α-Fe₂O₃ can be represented by the equation D = 1 × 10¹¹ exp (-146,000/RT). The large difference between D₀ and activation energy for these materials suggests that different diffusion mechanisms are involved.     

Self-Diffusion of Er in Pure and HfO2-Doped Polycrystalline Er2O3

Using a tracer sectioning technique, the self-diffusion of Er in pure and HfO₂-doped polycrystalline Er₂O₃ was measured at 1614° to 1900°C. Up to ≊ 10 mol% HfO₂ dopant level, the Er self-diffusion coefficients followed a relation based on cation vacancies as the principal mobile defects present and available for cation diffusion. Above 10 mol% HfO₂, deviation from this relation occurred, apparently due to clustering of cation vacancies and oxygen interstitials around the dopant hafnium ions. The activation energy for the self-diffusion of Er in pure Er₂O₃ was 82.2 kcal/mol and increased with the HfO₂ dopant level present.     

Phase Equilibria in the Systems NiO-Cr2,O3,-O2, MgO-Cr2O3−O2, and CdO-Cr2,O3,-O2, at High Oxygen Pressures

Phase equilibria were determined for the systems NiO-Cr₂O₃−O₂, MgO-Cr₂O₃,-O₂, and CdO-Cr₂O₃−O₂ from 450° to above 850° C and at oxygen pressures of from 2 to 3500 atm. Only two intermediate phases were found in the nickel system: NiCrO., (CrVO₄ structure) and the spinel NiCr₂O₄. The magnesium and cadmium systems are similar in that they have three analogous phases: the low-temperature α-MgCrO₄ and α-CdCrO₄ (both with the CrVO₄ structure), the high-temperature β-MgCrO₄ and β-CdCrO₄ (both with the α-MnMoO₄ structure), and the spinels MgCr₂O₄ and CdCr₂O₄. The cadmium system contains an additional phase, Cd₂CrO₅, which is primitive monoclinic.     

Atomistic Simulation of Defect Structures and Ion Transport in α-Fe2O3 and α-Cr2O3

Computer-modelling techniques are applied to the calculation of defect formation and migration energies in α-Fe₂O₃ and α-Cr₂O₃: both electronic and lattice defects are considered. The results are used to predict Arrhenius energies for cation and anion migration in different composition and temperature regimes and show reasonable agreement with experimental data where these are available.     

Influence of Cr and Fe on Formation of α-Al2O3 from γ-Al2O3

The effect of Cr and Fe in solid solution in γ-Al₂O₃ on its rate of conversion to α-Al₂O₃ at 1100°C was studied by X-ray diffraction. The δ form of Al₂O₃ was the principal intermediate phase produced from both pure γ-Al₂O₃ and that containing Fe³⁺ in solid solution, although addition of Fe greatly reduced crystallinity. Reflectance spectra and magnetic susceptibilities showed that Cr exists as Cr⁶⁺ in γ-Al₂O₃ and as Cr³⁺ in α-Al₂O₃, with θ-Al₂O₃ as the intermediate phase. The intermediates formed rapidly, and the rates of their conversion to α-Al₂O₃ were increased by 2 and 5 wt% additions of Fe and decreased by 2 and 4 wt% additions of Cr. An approximately linear relation observed between α-Al₂O₃ formation and decrease in specific surface area was only slightly affected by the added ions. This relation can be explained by a mechanism in which the sintering of δ- or θ-Al₂O₃, within the aggregates of their crystallites, is closely coupled with conversion of cubic to hexagonal close packing of O^2- ions by synchro-shear.     

The Effect of Atmosphere on the Sintering of Fe3O4 and Fe2O3 Powders at Low Temperatures

The sintering kinetics of submicrometer Fe₃O₄ and Fe₂O₃ powders were investigated at 300° to 500°C. Using measurements of the rate of reduction of surface area, the coefficients of surface diffusion on the oxides are estimated for a range of oxygen partial pressures. The surface-diffusion coefficients appear to be independent of P _O2 for magnetite and only slightly dependent on P _O2 for hematite.     

Conversion from β-Ce2O3·11Al2O3 to α-Al2O3 in Tetragonal ZrO2 Matrix

Composites of β-Ce₂O₃·11Al₂O₃ and tetragonal ZrO₂ were fabricated by a reductive atmosphere sintering of mixed powders of CeO₂, ZrO₂ (2 mol% Y₂O₃), and Al₂O₃. The composites had microstructures composed of elongated grains of β-Ce₂O₃·11Al₂O₃ in a Y-TZP matrix. The β-Ce₂O₃·11Al₂O₃ decomposed to α-Al₂O₃ and CeO₂ by annealing at 1500°C for 1 h in oxygen. The elongated single grain of β-Ce₂O₃·11Al₂O₃ divided into several grains of α-Al₂O₃ and ZrO₂ doped with Y₂O₃ and CeO₂. High-temperature bending strength of the oxygen-annealed α-Al₂O₃ composite was comparable to the β-Ce₂O₃·11Al₂O₃ composite before annealing.     

Growth of Single-Crystal and Polycrystalline Thin Films of MgAl2O4 and MgFe2O4

Single-crystal and polycrystalline films of Mg-Al₂O₄ and MgFe₂O₄ were formed by two methods on cleavage surfaces of MgO single crystals. In one procedure, aluminum was deposited on MgO by vacuum evaporation. Subsequent heating in air at about 510°C formed a polycrystalline γ-Al₂O₈ film. Above 540°C, the γ-Al₂O, and MgO reacted to form a single-crystal MgAl₂O₄ film with {001} MgAl₂O₄‖{001} MgO. Above 590°C, an additional layer of MgAl₂O₄, which is polycrystalline, formed between the γ-Al₂O₃ and the single-crystal spinel. Polycrystalline Mg-Al₂O₄ formed only when diffusion of Mg²⁺ ions proceeded into the polycrystalline γ-Al₂O₃ region. Corresponding results were obtained for Mg-Fe₂O₄. MgAl₂O₄ films were also formed on cleaved MgO single-crystal substrates by direct evaporation, using an Al₂O₃ crucible as a source. Very slow deposition rates were used with source temperatures of ∼1350°C and substrate temperatures of ∼800°C. Departures from single-crystal character in the films may arise through temperature gradients in the substrate.     

Nd2O3-Doped Sialons with ZrO2/ZrN Additions Formed by Sintering and Hot Isostatic Pressing

β-sialon and Nd₂O₃-doped α-sialon materials of varying composition were prepared by sintering at 1775° and 1825°C and by glass-encapsulated hot isostatic pressing at 1700°C. Composites were also prepared by adding 2–20 wt% ZrO₂ (3 mol% Nd₂O₃) or 2–20 wt% ZrN to the β-sialon and α-sialon matrix, respectively. Neodymium was found to be a fairly poor α-sialon stabilizer even within the α-phase solid solution area, and addition of ZrN further inhibited the formation of the α-sialon phase. A decrease in Vickers hardness and an increase in toughness with increasing content of ZrO₂(Nd₂O₃) or ZrN were seen in both the HIPed β-sialon/ZrO₂(Nd₂O₃) composites and the HIPed Nd₂O₃-stabiIized α-sialons with ZrN additions.     

Lowering Crystallization Temperatures by Seeding in Structurally Diphasic Al2O3-MgO Xerogels

Thermal reactions in 93% Al₂O₃-7% MgO and 95.8% Al₂O₃-4.2% MgO gels seeded with α-Al₂O₃, MgAl₂O₄, α-Fe₂O₃, and SiO₂, sols were investigated by differential thermal analysis to determine the extent of nucleation catalysis of solid-state reactions. Seeding with α-Al₂O₃ lowered the α-Al₂O₃ crystallization temperature in these xerogels by 100° to 150°C. Spinel seeds have much less effect on the γ-α transition, and α-Fe₂O₃ and SiO₂ seeds do not affect it significantly. Isostructural seeding of gels may therefore permit lower ceramic processing temperatures.     

Electrical Conductivity of PbO-P2O5-V2O5Glasses

The dc conductivities (α) of PbO-P₂O₅-V₂O₅ glasses containing up to 80 mol% V₂O₅ were measured at T = 100°C to T = 10°C below the glass transition temperature. Dielectric constants at 1 MHz, densities, and the fraction of reduced V ion were measured at room temperature. The conduction mechanism of glasses containing >10 mol% V₂O₅ was considered to be small-polaron hopping, as previously reported for other vanadate glasses. The temperature dependence of α was exponential, with α= (αo/ T ) exp(− W/kT ). When the V₂O₅ content was ≥50 mol%, W decreased and α increased with increasing V₂O₅ content, and the adiabatic approximation could be applied. In the composition range between 10 and 50 mol% V₂O₅, α increased with increasing V₂O₅ content, but W varied little. In this region, the hopping conduction was characterized as nonadiabatic. The effect of dielectric constants and V ion spacing on W is discussed.     

High-Temperature Transmission Electron Microscopy and X-Ray Powder Diffraction Studies of Polymorphic Phase Transitions in Ba4Nb2O9

Polymorphic phase transitions in Ba₄Nb₂O₉ were studied by thermal analyses, high-temperature transmission electron microscopy and X-ray powder diffractometry. Two stable polymorphs were isolated, low-temperature α-modification and high-temperature γ-modification, with the endothermic phase transition at 1176°C. The α→γ transformation is accompanied by the formation of a 120° domain structure, which is a consequence of hexagonal→orthorhombic unit cell reconstruction. Reheating the presintered γ-Ba₄Nb₂O₉ results in the formation of a metastable γ'-modification (formerly known as β-polymorph) in the temperature range between 360° and 585°C, before the γ→α transformation at 800°C. Above ∼490°C Ba₄Nb₂O₉ becomes moderately sensitive to a loss of BaO. In air the surface of Ba₄Nb₂O₉ grains decomposes to nanocrystalline Ba₅Nb₄O₁₅ and BaO, which instantly reacts with atmospheric CO₂ to form BaCO₃. Surface reaction delays γ→α transformation up to 866°C in air. In vacuum the loss of BaO is even more enhanced and consequently the formation of minor Ba₃Nb₂O₈ phase is observed above 1150°C.     

Lattice Diffusion Kinetics in Undoped and Impurity-Doped Sapphire (α-Al2O3): A Dislocation Loop Annealing Study

The shrinkage rates of small prismatic dislocation loops in thin foils of sapphire (α-Al₂O₃) have been determined using transmission electron microscopy; between observations the thin foils were annealed ex situ in the temperature range 1200° < T < 1500°C. The shrinkage rates of individual loops were used to determine the diffusivity of the rate-controlling species, assumed to be oxygen. The loop annealing results agree well with an extrapolation of oxygen self-diffusion data for undoped crystals obtained by conventional tracer techniques in the temperature range 1400° < T < 1900°C. The oxygen diffusion rate was slower in 600-ppm-Ti-doped and faster in 250-ppm-Mg-doped crystals compared to undoped sapphire, consistent at first sight with a "classical" picture of diffusion via oxygen vacancies in α-Al₂O₃. However, consideration of the experimental activation energies in terms of the concentration of free point defects suggests that substantial modification of the classical picture may be necessary.     

Studies in the System Li2O–Al2O3–Fe2O3-H2O

Subsolidus equilibrium relations in a portion of the system Li2O-Fe₂O₃-Al₂O3 in the temperature range 500° to 1400°C. have been determined near po₂ = 0.21. Of particular interest in this system is the LiFe₅O₈-LiAl₅O₈ join, which shows complete solid solution above 1180°C. Below this temperature the solid solution exsolves into two spinel phases. At 600°C. approximately 15 mole % of each compound is soluble in the other. The high-temperature solid solution and the low-temperature exsolution dome extend into the ternary system from the 1:5 join. There is no appreciable crystalline solubility of LiFeO₂ or of α-Fe₂O₃ in LiFe₅O₈. An attempt to confirm HFe₅O₈ as the correct formulation of the magnetic ferric oxide "γ-Fe₂O₃" was inconclusive, but in the absence of positive evidence, the retention of γ-Fe₂O₃ is recommended. All the metallic oxides of the Group IV elements increase the temperature of the monotropic conversion of -γ-Fe₂O₃ to α-Fe₂O₃. Silica and thoria have a greater effect on this conversion than does titania or zirconia.     

Subsolidus Phase Relationships in the System Fe2O3–Al2O3–TiO2 between 1000° and 1300°C

Subsolidus phase equilibria in the system Fe₂O₃–Al₂O₃–TiO₂ were investigated between 1000° and 1300°C. Quenched samples were examined using powder X-ray diffraction and electron probe microanalytical methods. The main features of the phase relations were: (a) the presence of an M₃O₅ solid solution series between end members Fe₂TiO₅ and Al₂TiO₅, (b) a miscibility gap along the Fe₂O₃–Al₂O₃ binary, (c) an α-M₂O₃( ss ) ternary solid-solution region based on mutual solubility between Fe₂O₃, Al₂O₃, and TiO₂, and (d) an extensive three-phase region characterized by the assemblage M₃O₅+α-M₂O₃( ss ) + Cor( ss ). A comparison of results with previously established phase relations for the Fe₂O₃–Al₂O₃–TiO₂ system shows considerable discrepancy.     

Cation Self-Diffusion in Polycrystalline Y2O3 and Er2O3

A tracer sectioning technique was used to measure cation self-diffusion coefficients in fully dense polycrystalline Y_aO₃ and Er₂O_s under oxidizing conditions. The results are described by the relations for Y₂O₃ (1400° to 1670°C), and for Er₂O₃ (1400° to 1700°C). The greater activation energy for erbium diffusion in erbia may be partly attributable to a mass effect.     

Interdiffusion in the System MgO-MgAl2O4

Interdiffusion coefficients in single-crystal MgO were determined using an MgO-MgAl₂O₄ diffusion couple. For a concentration of 1 mol% Al₂O₃ in MgO, the interdiffusion coefficient can be expressed as D =2.0±0.2 exp (−76,000±3,000/ RT ) for the MgO-MgAl₂O₄ couple. This relation compares well with previous measurements in the MgO-Al₂O₃ system. The interdiffusion coefficients, which increased with the mol fraction of cation vacancies, were in the range of 10⁻⁸ to 10⁻¹⁰ cm²s⁻¹ for the concentrations and temperatures studied. Diffusion was enhanced below 1640°C if powdered MgAl₂O₄ was used. Self-diffusion coefficients for Al³⁺ ions in MgO were calculated; Al³⁺ diffuses faster than Cr³⁺ in MgO.     

Synthesis and Properties of CaAl2O4-Coated AI2O3 Microcomposite Powders

Novel microcomposite powders, consisting of inert cores (αAL-Al₂O₃) surrounded by reactive cement-based coatings (CaAl₂O₄), were synthesized by a modified Pechini process. The evolution of the crystalline CaAl₂O₄ phase during calcination was studied using multiple analytical techniques, including DRIFTS,¹³C and ²⁷AlMAS FT-NMR, and XRD, for both pure CaAl₂O₄ and CaAl₂O₄-coated Al₂O₃ precursor powders. In both powders, decomposition proceeded via hydrocarbon chain scission and removal of ester groups at low temperatures ( T < 450°C), followed by the formation of inorganic carbonates at higher temperatures ( T > 450°C). These decomposition processes were accelerated by the underlying Al₂O₃ cores. Transmission electron microscopy (TEM) of the fully calcined powders showed that the inert αAL-Al₂O₃ particles were surrounded by relatively uniform CaAl₂O₄ coatings ranging in thickness from approximately 10 to 100 nm.     

Measurement of Oxygen Diffusion in Dy2O3 and Gd2O3 by Studying High-Temperature Oxidation of the Metals

Studies of the oxidation of Gd and Dy at P _O2's from 10^−0.3 to 10^−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P ₀₂ semiconducting domain yielded oxygen diffusion coefficients in Dy₂O₃ in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd₂O₃ which are considerably below literature values for monoclinic single-crystal Gd₂O₃. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P _O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10⁻⁶ to 10⁻⁷Ω⁻¹ cm⁻¹.