Preparation of In0.5Sc1.5Mo3O12 nanofibers and its negative thermal expansion property

Orthorhombic In_0.5Sc_1.5Mo₃O₁₂ nanofibers were prepared by electrospinning followed by a heat treatment. The effects of post-annealing temperatures on the phase composition, microstructure and morphology were investigated by XRD, SEM, HRTEM and XPS. Negative thermal expansion (NTE) behaviors of the In_0.5Sc_1.5Mo₃O₁₂ nanofibers were analyzed by high-temperature XRD. Results indicate that the as-prepared In_0.5Sc_1.5Mo₃O₁₂ nanofibers show an amorphous structure with smooth and homogeneous shape. The average diameter of the as-prepared In_0.5Sc_1.5Mo₃O₁₂ nanofibers is around 515 nm. Well crystallized orthorhombic In_0.5Sc_1.5Mo₃O₁₂ nanofibers could be prepared after post-annealing at 550 °C for 2 h with an average diameter of about 192 nm. The crystallinity of In_0.5Sc_1.5Mo₃O₁₂ nanofibers gradually improved with the increase of annealing temperature. However, too high post-annealing temperature leads to a damage of sample's fiber structure. The high-temperature XRD results reveal that In_0.5Sc_1.5Mo₃O₁₂ nanofibers show an anisotropic NTE, and the coefficients of thermal expansion (CTEs) along a-axis and c-axis were −5.95 × 10⁻⁶ °C⁻¹ and -3.54 × 10⁻⁶ °C⁻¹, while the one along b-axis is 5.61 × 10⁻⁶ °C⁻¹. The volumetric CTE of In_0.5Sc_1.5Mo₃O₁₂ nanofibers is −3.90 × 10⁻⁶ °C⁻¹ and the linear one is 1.3 × 10⁻⁶ °C⁻¹ in 25–700 °C.     

Flower-like Sc2Mo3O12 nanosheet clusters: Synthesis,thermal expansion and photocatalytic properties

In this work, Sc₂Mo₃O₁₂ has been synthesized via one-pot hydrothermal reaction. The effects of process conditions on the crystal structure, morphology, photocatalytic activity and negative thermal expansion (NTE) behaviors of flower-like Sc₂Mo₃O₁₂ were systematically investigated. Results indicate that orthorhombic flower-like Sc₂Mo₃O₁₂ assembled by nano-size flaky crystal grains can be synthesized by one-pot hydrothermal reaction at a temperature as low as 120 °C for 2 h. The hydrothermal reaction temperature and time have no obvious effects on the crystal structure and morphology. However, the photocatalytic property of synthesized Sc₂Mo₃O₁₂ is sensitive to the above parameters. The sample synthesized at 200 °C for 2 h shows the best photocatalytic degradation of methyl orange, and the degradation rate is 73.32% in 2 h ¹The coefficient of thermal expansion (CTE) of Sc₂Mo₃O₁₂ is ?1.99 × 10^?6 °C^?1 in 50–500 °C tested using TMA. The high-temperature XRD analysis reveals that Sc₂Mo₃O₁₂ exhibits anisotropic NTE and the intrinsic CTE is measured to be ?2.09 × 10^?6 °C^?1 in 25–800 °C.     

Electrospinning synthesis and negative thermal expansion of one-dimensional Sc2Mo3O12 nanofibers

Orthorhombic Sc₂(MoO₄)₃ nanofibers have been prepared by ethylene glycol assisted electrospinning method. The effects of annealing temperature, precursor concentration, spinning distance and solvent on the preparation of Sc₂(MoO₄)₃ nanofibers were characterized by XRD, SEM, HRTEM, EDX and high-temperature XRD. XRD analysis shows as-prepared nanofibers are amorphous. Orthorhombic Sc₂(MoO₄)₃ nanofibers can be fabricated after annealing at different temperatures in 500–800 °C for 2 h. The crystallinity of Sc₂(MoO₄)₃ nanofibers improves and the nanofiber diameter decreases gradually as the annealing temperature increases. However, the nanofiber structure was destroyed at the annealing temperature above 700 °C. Higher precursor concentration results in a slight increase of diameter and decrease in destroying temperature of Sc₂(MoO₄)₃ nanofibers. Spinning distance also affects the diameter of nanofibers, and the nanofiber diameter decreases as the distance increases. One-dimensional orthorhombic Sc₂(MoO₄)₃ nanofibers exhibit anisotropic negative thermal expansion. In 25–700 °C, the coefficients of thermal expansion (CTE) of α_a, α_b and α_c are ?5.81 × 10^?6 °C^?1, 4.80 × 10^?6 °C^?1 and -4.33 × 10^?6 °C^?1, and the α_l of Sc₂(MoO₄)₃ nanofibers is ?1.83 × 10^?6 °C^?1.     

Sc- and W-substitution and tuning of phase transition in the Al2Mo3O12

Al₂Mo₃O₁₂ is a typical negative thermal expansion (NTE) material, whose thermal expansion behavior depends on its crystal phase. The thermal shock caused by temperature-induced phase transition limits its wide application. The two series of Al_{2. x}Sc_xMo₃O₁₂ (0 ≤ x ≤ 1) and Al₂Mo_3-xW_xO₁₂ (0 ≤ x ≤ 2.5) solid solutions with controllable phase transition temperature were synthesized via single cation substitution at the A or B position. The problem of thermal shock caused by the change of temperature is effectively solved in the synthesized Al_1.6Sc_0.4Mo₃O₁₂ and Al₂Mo_0.5W_2.5O₁₂, showing stable NTE performance above room temperature, and the coefficients of thermal expansion of which are ?2.19 × 10^?6 °C^?1 in 100–550 °C and ?4.25 × 10^?6 °C^?1 in 85–500 °C, respectively. A-site cation substitution is a more effective way to tune the thermal expansion properties of Al₂Mo₃O₁₂, which is attributed to the fact that the bond strength of A-O is weaker than that of B–O in the compound.     

Effect of isovalent substitution on phase transition and negative thermal expansion of In2−xScxW3O12 ceramics

Solid solutions of In_2−xSc_xW₃O₁₂ (0≤x≤2) were successfully synthesized using the solid state reaction method. Effects of substituted scandium content on the phase composition, microstructure, phase transition temperatures and thermal expansion behaviors of the resulting In_2−xSc_xW₃O₁₂ (0≤x≤2) samples were investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and thermal mechanical analyzer (TMA). Results indicate that the obtained In₂W₃O₁₂ ceramic undergoes a structure phase transition from monoclinic to orthorhombic at 248 °C. This phase transition temperature of In₂W₃O₁₂ can be easily shifted to a lower temperature by partly substituting the In³⁺ with Sc³⁺. When the x value increased from 0 to 1, the phase transition temperatures of In_2−xSc_xW₃O₁₂ (0≤x≤2) samples decreased from 248 to 47 °C. All the In_2−xSc_xW₃O₁₂ (0≤x≤2) ceramics show fine negative thermal expansion below their corresponding phase transition temperatures. The negative thermal expansion coefficients of the In_2−xSc_xW₃O₁₂ (0≤x≤2) ceramics change in the range from −1.08×10⁻⁶ °C⁻¹ to −7.13×10⁻⁶ °C⁻¹.     

Enhanced negative thermal expansion of (KMg)3+-substituted Fe2Mo3O12 ceramics

Herein, we report the solid-state synthesis of (KMg)_xFe_2-xMo₃O₁₂ (0 = x ≤ 1.5) ceramics. Phase composition, crystal structure, morphology, phase transition and thermal expansion behavior of the (KMg)_xFe_2-xMo₃O₁₂ ceramics were investigated by XRD, Raman, XPS, HRTEM, EDX, SEM, TMA and high-temperature XRD. Results indicate that (KMg)³⁺ dual-cations have successfully replaced Fe³⁺ in Fe₂Mo₃O₁₂ ceramics and single-phase monoclinic (KMg)_xFe_2-xMo₃O₁₂ ceramics were prepared for 0.25 = x ≤ 1. (KMg)³⁺ introduction can increase the density of (KMg)_xFe_2-xMo₃O₁₂ ceramics and effectively improve their negative thermal expansion (NTE) performance. In addition, the phase transition temperature (Tc) of Fe₂Mo₃O₁₂ was reduced from 508.1 °C to room temperature with the increase of (KMg)³⁺-substitution. Monoclinic KMgFeMo₃O₁₂ ceramics was observed to show stronger NTE in a wider temperature range of 30–700 °C for the first time. Its corresponding coefficient of thermal expansion (CTE) is as high as ?17.21 × 10^?6 °C^?1. The distortion of [FeO₆/MgO₆] polyhedra in (KMg)_xFe_2-xMo₃O₁₂ caused by (KMg)³⁺-substitution contributed to the stronger NTE.     

Negative thermal expansion coefficient of Sc-doped indium tungstate ceramics synthesized by co-precipitation

Co-precipitation was successfully applied to synthesize the Sc³⁺ doped In_2-xSc_x (WO₄)₃ (x = 0, 0.3, 0.6, 0.9 and 1.2) compounds. The composition- and temperature-induced structural phase transition and thermal expansion behaviors of Sc³⁺ doped In₂(WO₄)₃ were investigated. Results indicate that In_2-xSc_x (WO₄)₃ crystalizes in a monoclinic structure at 300 °C for x ≤ 0.3 and changes into hexagonal structure for x ≥ 0.6. Hexagonal In_1.1Sc_0.9(WO₄)₃ displays negative thermal expansion (NTE) with an average linear coefficient of thermal expansion (CTE) of −1.85 × 10⁻⁶ °C ⁻¹. After sintering at 700 °C and above, a phase transition from hexagonal to orthorhombic phase was observed in In_2-xSc_x (WO₄)₃ (x ≥ 0.6). Sc³⁺ doping successfully reduce the temperature-induced phase transition temperature of In_2-xSc_x (WO₄)₃ ceramics from 250 °C (x = 0) to room temperature (x = 0.9). When x = 0.9 and 1.2, the average linear CTEs of In_2-xSc_x (WO₄)₃ ceramics are −5.45 × 10⁻⁶ °C⁻¹ and -4.43 × 10⁻⁶ °C⁻¹ in a wider temperature range of 25–700 °C, respectively.     

Near‐Zero Thermal Expansion in In(HfMg)0.5Mo3O12

In(HfMg)_0.5Mo₃O₁₂, which can be considered as a 1:1 mole ratio solid solution of the low‐positive thermal expansion material HfMgMo₃O₁₂ and the low‐negative thermal expansion (NTE) material In₂Mo₃O₁₂ was prepared. From DSC and XRPD results, we show that In(HfMg)_0.5Mo₃O₁₂ exists in a monoclinic (P2₁/a) structure at low temperature and undergoes a phase transition at ~425 K to an orthorhombic phase (Pnma), with an associated enthalpy change of 0.89 kJ mol^?1. Thermal expansion is large and positive in the low‐temperature monoclinic phase (average α_? = 16 × 10^?6 K^?1 and 20 × 10^?6 K^?1, from dilatometry and XRPD, respectively). Remarkably, this material has a near‐zero thermal expansion (ZTE) coefficient over the temperature range ~500 to ~900 K in the high‐temperature orthorhombic phase, both intrinsically and for the bulk sample. The average linear intrinsic (XRPD) value is α_? = ?0.4 × 10^?6 K^?1, and the average bulk (dilatometric) value is α_? = 0.4 × 10^?6 K^?1 with an uncertainty of ± 0.2 × 10^?6 K^?1. The slight difference between intrinsic and bulk thermal expansion is attributed to microstructural effects. XRPD results show that the thermal expansion is more isotropic than for the parent compounds HfMgMo₃O₁₂ and In₂Mo₃O₁₂.     

Fabrication and characterization of MOCVD (In1-xAlx)2O3 (0.1≤x≤0.6) ternary films

A series of (In_1-xAl_x)₂O₃ (0.1 ≤ x ≤ 0.6) films with tunable bandgap were grown on MgO (100) substrates by MOCVD. The influences of chemical compositions and growth temperatures on the film properties were studied systematically. XRD analyses indicated that the film quality degraded from crystalline to amorphous structure as Al concentration (x) increased. The (In_1-xAl_x)₂O₃ films prepared at 700 °C exhibited better film crystallinity than those of the ones grown at 600 °C. The films prepared at 700 °C with x = 0.1–0.3 showed an epitaxial In₂O₃ <111> orientation with the corresponding growth relationship of In₂O₃ (111)∥MgO (100). The film with x = 0.2 exhibited the best crystallinity and the largest grain size of 25.9 nm. The Hall mobilities and resistivities of the films were influenced evidently by Al concentrations. The Hall mobility showed a monotonous decrease from 12 to 1.1 cm²V^?1s^?1 as x increased from 0.1 to 0.6. The lowest resistivity of 9.2 × 10^?3 Ω cm was acquired for the film with x = 0.2. The average transmittances in the visible region for all the films were beyond 83%. The bandgap of the (In_1-xAl_x)₂O₃ films can be regulated in the range of 3.85–4.88 eV by changing Al concentrations from 0.1 to 0.6.     

Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing

Large stable ferroelectricity in nanoscale undoped zirconia (ZrO₂) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12 μC cm⁻² were obtained in the as-deposited ZrO₂ thin films prepared by remote plasma atomic layer deposition at 300 °C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc2₁ in the as-deposited ZrO₂ thin films was confirmed by high-resolution transmission electron microscopy.     

Crystal structure,impedance and broadband dielectric spectra of ordered scheelite-structured Bi(Sc1/3Mo2/3)O4 ceramic

Bi(Sc_1/3Mo_2/3)O₄ ceramics were prepared via solid state reaction method. It crystallized with an ordered scheelite-related structure (a?=?16.9821(9)?Å, b?=?11.6097(3)?Å, c?=?5.3099(3)?Å and β?=?104.649(2)°) with a space group C12/C1, in which Bi³⁺, Sc³⁺ and Mo⁶⁺ are ?8, ?6 and ?4 coordinated, respectively. Bi(Sc_1/3Mo_2/3)O₄ ceramics were densifiedat 915?°C, giving a permittivity (ε_r) ～24.4, quality factor (Qf, Q?=?1/dielectric loss, f?=?resonant frequency) ～48, 100?GHz and temperature coefficient of resonant frequency (TCF)?～??68?ppm/°C. Impedance spectroscopy revealed that there was only a bulk response for conductivity with activation energy (E_a) ～0.97?eV, suggesting the compound is electrically and chemically homogeneous. Wide band dielectric spectra were employed to study the dielectric response of Bi(Sc_1/3Mo_2/3)O₄ from 20?Hz to 30?THz. ε_r was stable from 20?Hz to the GHz region, in which only ionic and electron displacive polarization contributed to the?ε_r.     

The effects of the post-annealing time on the growth mechanism of Bi2Sr2Ca1Cu2O8+∂ thin films produced on MgO (100) single crystal substrates by pulsed laser deposition (PLD)

Bi₂Sr₂Ca₁Cu₂O_8+∂ thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R–T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 °C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O₂ (7%), at 860 °C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM≈0.159°) and c-axis oriented. The critical temperature, T_C, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, J_C, was calculated as 3.34×10⁷ A/cm² for the film annealed at 860 °C for 30 min at 10 K.     

Sol-gel processed high-k aluminum oxide dielectric films for fully solution-processed low-voltage thin-film transistors

High-k oxide dielectric films have attracted intense interest for thin-film transistors (TFTs). However, high-quality oxide dielectrics were traditionally prepared by vacuum routes. Here, amorphous high-k alumina (Al₂O₃) thin films were prepared by the simple sol-gel spin-coating and post-annealing process. The microstructure and dielectric properties of Al₂O₃ dielectric films were systematically investigated. All the Al₂O₃ thin films annealed at 300–600?°C are in amorphous state with ultrasmooth surface (RMS ~ 0.2?nm) and high transparency (above 95%) in the visible range. The leakage current of Al₂O₃ films gradually decreases with the increase of annealing temperature. Al₂O₃ thin films annealed at 600?°C showed the low leakage current density down to 3.9?×?10^?7 A/cm² at 3?MV/cm. With the increase of annealing temperature, the capacitance first decreases then increases to 101.1?nF/cm² (at 600?°C). The obtained k values of Al₂O₃ films are up to 8.2. The achieved dielectric properties of Al₂O₃ thin films are highly comparable with that by vapor and solution methods. Moreover, the fully solution-processed InZnO TFTs with Al₂O₃ dielectric layer exhibit high mobility of 7.23?cm² V^?1 s^?1 at the low operating voltage of 3?V, which is much superior to that on SiO₂ dielectrics with mobility of 1.22?cm²/V^?1 s^?1 at the operating voltage of 40?V. These results demonstrate that solution-processed Al₂O₃ thin films are promising for low-power and high-performance oxide devices.     

Phase transition and negative thermal expansion properties of Sc2−xCrxMo3O12

The crystal structure, phase transition and thermal expansion behaviors of solid solutions Sc_2−xCr_xMo₃O₁₂ (0≤x≤2) were investigated using X-ray diffraction (XRD) and differential scanning calorimetry (DSC). At room temperature, samples with x≤0.7 and x≥0.8 crystallize in orthorhombic and monoclinic structures, respectively. DSC result indicates that the phase transition of Sc_0.5Cr_1.5Mo₃O₁₂ from monoclinic to orthorhombic structure occurs at 203.66 °C. The linear thermal expansion coefficient of orthorhombic phases varies from −2.334×10⁻⁶ °C⁻¹ to 0.993×10⁻⁶ °C⁻¹ when x increases from 0.0 to 1.5. The near-zero linear thermal expansion coefficients of −0.512×10⁻⁶ °C⁻¹ and −0.466×10⁻⁶ °C⁻¹ are observed for compounds with x=0.5 and 0.7, respectively.     

Ultrasound assisted synthesis of Gd and Nd doped ceria electrolyte for solid oxide fuel cells

In this study, the ceramic powders of Ce_1?xGd_xO_2?x/2 and Ce_1?xNd_xO_2?x/2 (x=0.05, 0.10, 0.15, 0.20 and 0.25) were synthesized by ultrasound assisted co-precipitation method. The ionic conductivity was studied as a function of dopant concentration over the temperature range of 300–800 °C in air, using the impedance spectroscopy. The maximum ionic conductivity, σ_800 °C=4.01×10^?2 Scm^?1 with the activation energy, E_a=0.828 kJmol^?1 and σ_800 °C=3.80×10^?2 Scm^?1 with the activation energy, E_a=0.838 kJmol^?1 were obtained for Ce_0.90Gd_0.10O_1.95 and Ce_0.85Nd_0.15O_1.925 electrolytes, respectively. The average grain size was found to be in the range of 0.3–0.6 μm for gadolinium doped ceria and 0.2–0.4 μm for neodymium doped ceria. The uniformly fine crystallite sizes (average 12–13 nm) of the ultrasound assisted prepared powders enabled sintering of the samples into highly dense (over 95%) ceramic pellets at 1200 °C (5 °C min^?1) for 6 h.     

Tuning the phase transition temperature of Cr2(MoO4)3 by A-site substitution of scandium

A series of Cr_2-xSc_x(MoO₄)₃ solid solutions with tunable monoclinic-to-orthorhombic phase transition temperature have been synthesized via solid-state reaction. X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) results show that all synthesized Cr_2-xSc_x(MoO₄)₃ (0?< x?≤?1.4) solid solutions are single phased with no impurities identified, which reveals that Cr³⁺ has been substituted by Sc³⁺ in Cr₂(MoO₄)₃. Monoclinic to orthorhombic phase transition temperature of Cr_2-xSc_x(MoO₄)₃ can be effectively tuned from 372?°C to room temperature as the substituted Sc³⁺-content (x) varies from 0 to 1.4. The synthesized Cr_0.6Sc_1.4(MoO₄)₃ crystalizes in an orthorhombic structure at room temperature, exhibiting anisotropic negative thermal expansion throughout the testing temperature range. The coefficient of thermal expansion measured by thermal mechanical analyzer (TMA) for Cr_0.6Sc_1.4(MoO₄)₃ is ?11.17?×?10^?6 °C^?1 in the testing temperature range of 30–600?°C. Moreover, the crystallization, micromorphology, density and coefficient of thermal expansion of Cr_0.6Sc_1.4(MoO₄)₃ are obviously sensitive to the twice sintering temperature, whereas none of such sensitivity is found for the phase transition temperature.     

Effects of Yb and Sc co-doping on the thermal properties and CMAS corrosion of garnet-type (Y3-xYbx)(Al5-xScx)O12 ceramics

Thermal barrier coatings with excellent thermal performance and corrosion resistance are essential for improving the performance of aero-engines. In this paper, (Y_3-xYb_x)(Al_5-xSc_x)O₁₂ (x = 0, 0.1, 0.2, 0.3) thermal barrier coating materials were synthesized by a combination of sol-gel method and ball milling refinement method. The thermal properties of the (Y_3-xYb_x)(Al_5-xSc_x)O₁₂ ceramics were significantly improved by increasing Yb and Sc doping content. Among designed ceramics, (Y_2.8Yb_0.2)(Al_4.8Sc_0.2)O₁₂ (YS-YAG) showed the lowest thermal conductivity (1.58 Wm^?1K^?1, at 800 °C) and the highest thermal expansion coefficient (10.7 × 10^?6 K^?1, at 1000 °C). In addition, calcium-magnesium- aluminum -silicate (CMAS) corrosion resistance of YS-YAG was further investigated. It was observed that YS-YAG ceramic effectively prevented CMAS corrosion due to its chemical inertness to CMAS as well as its unique and complex structure. Due to the excellent thermal properties and CMAS corrosion resistance, YS-YAG is considered to be prospective material for thermal barrier coatings.     

Phase development and crystallization of CuAlO2 thin films prepared by pulsed laser deposition

A polycrystalline CuAlO₂ single-phase target was fabricated by the conventional solid-state reaction route using Cu₂O and Al₂O₃. Thin films of CuAlO₂ were deposited by a pulsed laser deposition process on sapphire substrates at different temperatures. Then, post-annealing was followed at different conditions, and the phase development process of the films was examined. As grown thin films in the temperature range of 450–650 °C were amorphous. The c-axis oriented single phase of CuAlO₂ thin films were obtained when the films were post-annealed at 1100 °C in air after growing at 650 °C. Phi-scan of the film clearly showed 12 peaks, each of which are positioned at intervals of 30°. This is thought to be caused by the rhombohedral structured CuAlO₂ thin film growing in the states of 30° tilt during the annealing process. Hall effect analysis of the film was carried out.     

High-entropy rare-earth disilicate (Lu0.2Yb0.2Er0.2Tm0.2Sc0.2)2Si2O7: A potential environmental barrier coating material

A new high-entropy ceramic (Lu_0.2Yb_0.2Er_0.2Tm_0.2Sc_0.2)₂Si₂O₇ ((5RE_0.2)₂Si₂O₇) was proposed as a potential environmental barrier coating (EBC) material for ceramics matrix composites in this work. Experimental results showed that the (5RE_0.2)₂Si₂O₇ synthesized by solid-phase sintering was a monoclinic solid solution and had good phase stability proved by no obvious absorption/exothermic peak in the DSC curve from room temperature to 1400 °C. It performed a lower coefficient of thermal expansion (2.08 ×10^?6-4.03 ×10^?6 °C^?1) and thermal conductivity (1.76–2.99 W?m^?1?°C^?1) compared with the five single principal RE₂Si₂O₇. In water vapor corrosion tests, (5RE_0.2)₂Si₂O₇ also exhibited better water vapor corrosion resistance attributed to the multiple doping effects. The weight loss was only 3.1831 × 10^?5 g?cm^?2 after 200 h corrosion at 1500 °C, which was lower than that of each single principal RE₂Si₂O₇. Therefore, (5RE_0.2)₂Si₂O₇ could be regarded as a remarkable candidate for EBCs.     

The role of 4f14 Lu3+ and 3d0 Sc3+ in faraday rotating glass/ceramic: Structural stability,magnetic and magneto optical properties

Magneto-optical materials exhibiting low/no temperature-dependent Faraday rotation, high magnetization and good thermal/mechanical stability are required in various magneto-optical sensing and photonic applications. For the first time, we employed the rare earth Lu³⁺ and Sc³⁺ ions to strengthen the structure and enhance magnetic& magneto-optical properties of heavy metal oxide diamagnetic glasses. Experimental results revealed that the doping of Lu₂O₃ and Sc₂O₃ not only significantly increased the UV-VIS transmittance, improved the thermal stability, Vicker's hardness and tensile strength, but also remarkably increased the magnetic susceptibility and Verdet constant. The reasons were analyzed through the XRD, FT-IR, Raman spectra, oxygen chemical bonds, EPR of Lu₂O₃ and Sc₂O₃ crystal fields and affinity to oxygen. Promising Faraday rotating glass with Verdet constant of 76.32 rad/Tm at 633 nm, thermal stability KH = 0.817, very low thermal expansion coefficient (14.04 × 10^?6 K^?1) and high diamagnetic susceptibility of 9.25 × 10^?6 emu/g has obtained which has potential merits for photonics and MO devices applications.