Preparation and Electric Properties of Bi0.5Na0.5TiO3–Bi(Mg0.5Ti0.5)O3 Lead‐Free Piezoceramics

Lead‐free BNT‐based piezoceramics, (1?x)Bi_0.5Na_0.5TiO₃–xBi(Mg_0.5Ti_0.5)O₃ [(1?x)BNT–xBMT] (0.00 ≤ x ≤ 0.06) binary system, were synthesized using a conventional ceramic fabrication method. Effect of Bi(Mg_0.5Ti_0.5)O₃ (BMT) substitution on room temperature (RT) crystal structure, and temperature dependence of electric properties were investigated. The XRD indicates that a pure perovskite phase is formed. The introduction of BMT decreases E_C of BNT from 7.3 to 4.0 kV/mm, and increases d₃₃ from 58 pC/N to 110 pC/N for the x = 0.05. The system shows a typical ferroelectric (FE) polarization loop P(E) and butterfly bipolar strain‐electric S(E) curve at RT. For the composition of 0.95BNT–0.05BMT antiferroelectric (AFE) phase appears near 80°C, characterized by a constricted P(E) loop and altered bipolar S(E) butterfly, and gradually prevails with increasing temperature. Temperature dependence of dielectric constant shows that T_C increases from 310°C for pure BNT to 352°C for the x = 0.05. The results indicate that the piezoelectric properties of BNT have been improved by means of Bi(Mg_0.5Ti_0.5)O₃ substitution.     

Large dielectric constants and good thermal stability of Nb2O5-doped BaTiO3–Bi(Mg1/2Ti1/2)O3 ceramics with core–shell structure

0.96BaTiO₃-0.04Bi(Mg_1/2Ti_1/2)O₃ (0.96BT-0.04BMT) + y wt.% Nb₂O₅ ceramics (0.0 ≤ y ≤ 2.0) were sintered at 1275 °C to fabricate a ceramic with a large ε_r for an X8R multilayer ceramic capacitor (MLCC). Addition of Nb₂O₅ afforded a core–shell structure, and the compositions of the core and shell regions were similar to those of BT and BT-BMT, respectively. The sample (y = 1.25) exhibited a large ε_r of 2285 with a good temperature stability satisfying the X8R specification because of a broad shell-region phase-transition peak at −17 °C and a decreased ε_r of the core-region phase-transition peak. The 0.1 wt% BaO–CaO–SiO₂ (BCS) was used to reduce the sintering temperature, and the 9-layered MLCC produced using a BCS-doped 0.96BT-0.04BMT + 1.25 wt% Nb₂O₅ ceramic at 1200 °C showed a large capacitance of 67 nF with a good temperature stability thus complying with EIA-X8R regulations.     

Tuning of electrical properties of xBi(Zn0.5Ti0.5)O3-(1-x) (Ba0.5Sr0.5)TiO3 ceramics by composition design and bandgap engineering

Herein, the xBi(Zn_0.5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ (x = 0.05, 0.10, 0.15, 0.20) novel negative temperature coefficient (NTC) ceramic materials were fabricated by solid-state method. X-ray diffraction revealed that xBi(Zn_0·5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ successfully formed solid solution. The UV–vis diffuse spectra of the samples indicate that the band gap increases with the increasing Bi(Zn_0·5Ti_0.5)O₃ content. The resistance temperature curve showed that with the increase of Bi(Zn_0·5Ti_0.5)O₃ content, the resistivity ρ of the ceramics at 400 °C increased from 5.96 × 10⁶ to 2.67 × 10⁷ Ω cm, as well as an increase in the B_400/800 from 12374.6 to 13469.1 K. The enhanced resistivity is attributed to the increased band gap and reduced carrier pairs caused by the Bi(Zn_0.5Ti_0.5)O₃ modification. The impedance data indicates that the conduction process is activated by thermal. The ceramic samples exhibit the excellent NTC characteristics over a range of 400 °C–1000 °C. Hence, the xBi(Zn_0.5Ti_0.5)O₃-(1-x) (Ba_0.5Sr_0.5)TiO₃ ceramics have the potential to become high temperature NTC ceramics that can operate in a wide temperature range.     

Dielectric Properties of Ba0.8Ca0.2TiO3–Bi(Mg0.5,Ti0.5)O3–NaNbO3 Ceramics

Ceramics in the system 0.45Ba_0.8Ca_0.2TiO₃–(0.55?x)Bi(Mg_0.5Ti_0.5)O₃–xNaNbO₃, x = 0–0.02 were fabricated by a conventional solid‐state reaction route. X‐ray powder diffraction indicated cubic or pseudocubic symmetry for all samples. The parent 0.45Ba_0.8Ca_0.2TiO₃–0.55Bi(Mg_0.5Ti_0.5)O₃ composition is a relaxor dielectric with a near‐stable temperature coefficient of relative permittivity, ε_r = 950 ± 10% across the temperature range 80°C–600°C. Incorporation of NaNbO₃ at x = 0.2 extends the lower working temperature to ≤25°C, with ε_r = 575% ± 15% from temperatures ≤25°C to >400°C, and tan δ < 0.025 from 25°C to 400°C. Values of dc resistivity ranged from ~10⁹ Ω·m at 250°C to ~10⁶ Ω·m at 500°C. The properties suggest that this material may be of interest for high‐temperature capacitor applications.     

Stability of High‐Temperature Dielectric Properties for (1 − x)Ba0.8Ca0.2TiO3–xBi(Mg0.5Ti0.5)O3 Ceramics

Ceramics in the solid solution system, (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃, were prepared by a conventional mixed oxide route. Single‐phase perovskite‐type X‐ray diffraction patterns were observed for compositions x < 0.6. A change from tetragonal to single‐phase cubic X‐ray patterns occurred at x ≥ 0.1. Dielectric measurements indicated relaxor behavior for x ≥ 0.1. Increasing the Bi(Mg_0.5Ti_0.5)O₃ content improved the temperature sensitivity of relative permittivity ?_r at high temperatures. At x = 0.5, a near‐plateau relative permittivity, 835 ± 40, extended across the temperature range, 65°C–550°C; the permittivity increased at x = 0.6 to 2170 ± 100 for temperatures 160°C–400°C (1 kHz). The corresponding loss tangent, tanδ, was ≤0.025 for temperatures between 100°C and 430°C for composition x = 0.5; at x = 0.6, losses increased sharply at >300°C. Comparisons of dielectric properties with other materials proposed for high‐temperature capacitor applications suggest that (1 ? x)Ba_0.8Ca_0.2TiO₃–xBi(Mg_0.5Ti_0.5)O₃ ceramics are a promising base material for further development.     

Structural,optical, electrical and dielectric properties of (Sr1-xMgx)(Sn0.5Ti0.5)O3 (X=0.00, 0.25, 0.50, 0.75) ceramics via solid state route

We have prepared (Sr_1-xMg_x)(Sn_0.5Ti_0.5)O₃, (X = 0.00, 0.25, 0.50, 0.75) samples by the solid state reaction method and studied the structural, optical, electrical modulus and the other dielectric properties of the samples with respect to variation in frequencies (1 × 10⁹ to 2 × 10⁹ Hz) using Impedance Analyzer. This study suggests that the XRD patterns of the samples have shown that this possesses cubic perovskite structure in space group Pm-3m and scanning electron microscope was used to analyze the grain size distribution and porosity of the ceramic. The dielectric properties of these materials were strongly dependent upon on concentration X as well as amount of frequencies. The existence of metal oxygen bonds of Sr–Ti–O was verified by Fourier Transform Infra Red (FTIR) spectrum at 540 cm⁻¹. The highest PL intensity of 716.38 that exhibits the green emission (508.5 nm) was obtained for the composition of (Sr_0.25Mg_0.75)(Sn_0.5Ti_0.5)O₃. AC conductivity slowly decreases with increasing Mg substitution and also the sample (Sr_0.25Mg_0.75)(Sn_0.5Ti_0.5)O₃ having the lowest (constant) value of conductivity at 1 GHz–2GHz.     

High-energy storage performance in lead-free (1-x)BaTiO3-xBi(Zn0.5Ti0.5)O3 relaxor ceramics for temperature stability applications

In this paper, we prepared lead-free (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ (x=0.04, 0.08, 0.10, and 0.14) ceramics by a conventional solid-state reaction technique. Pure perovskite structures and dense microstructures were demonstrated for all the compositions. Interestingly, it was found that the sintering temperature tended to decrease with increasing the Bi(Zn_0.5Ti_0.5)O₃ content. It should be stressed that a low sintering temperature of 1050 °C was utilized for the composition of x=0.14. Moreover, the dielectric permittivity-temperature curve became more flat and the relaxor degree became stronger with the augment in Bi(Zn_0.5Ti_0.5)O₃ content. We also conducted a detailed study on the energy storage performance for all the compositions from 25 °C to 180 °C.We found that relatively temperature-stable energy storage performance could be obtained in the compositions with x=0.08, 0.10 and 0.14 regardless of the evolution of dielectric constant during the test temperature range. In particular, due to a higher field of 12 MV m⁻¹, the discharge energy storage densities of x=0.14 could reach 0.81 J cm⁻³, 0.80 J cm⁻³, 0.78 J cm⁻³, 0.72 J cm⁻³, and 0.67 J cm⁻³ with high efficiencies of 94%, 92%, 94%, 88% and 77% at 25 °C, 50 °C, 100 °C, 150 °C, and 180 °C, respectively. All these results demonstrate the (1-x)BaTiO₃-xBi(Zn_0.5Ti_0.5)O₃ ceramics are quite promising for temperature-stable energy storage applications.     

Microstructure and dielectric characteristics of Nb2O5 doped BaTiO3-Bi(Znl/2Til/2)O3 ceramics for capacitor applications

The effects of Nb₂O₅ addition on the dielectric properties and phase formation of 0.8BaTiO₃-0.2Bi(Zn_l/2Ti_l/2)O₃ (0.8BT-0.2BZT) ceramics were investigated. The desired perovskite phase was achieved with Nb₂O₅ doping levels being in the range of 0.5 wt.%–3.0 wt.%. The 0.8BT-0.2BZT ceramics doped with 1.5 wt.% Nb₂O₅ was found to possess a moderate dielectric constant (ε = 1170) and low dielectric loss (tanδ = 1%) at room temperature and 1 kHz frequency, showing a flat dielectric behavior over the temperature range of −55 °C–200 °C. Based on this composition, the X9R-MLCC (multilayer ceramic capacitor) with Ag0.7-Pd0.3 electrode was sintered at 1060 °C. The optimized capacitance of the MLCC is 26.5 nF, with dielectric loss tanδ of 0.9% and electrical resistance of 4.50 × 10¹¹ Ω at room temperature, leading to a high time constant of 11,900 s, decreasing to 175 s at 200 °C, being one order higher than those of commercial X7R MLCC. In addition, the equivalent series resistance (ESR) was found to be on the order of 0.2 mΩ at 2 MHz, much lower than that of the DC Bus Capacitor Bank for the automotive inverters (where the desired characteristic is <3 mΩ). All these characteristics of the newly developed MLCC will benefit the high temperature and high power capacitor applications.     

High energy storage efficiency and fast discharge property of temperature stabilized Ba0.4Sr0.6TiO3–Bi(Mg0.5Ti0.5)O3 ceramics

(1?x)Ba_0.4Sr_0.6TiO₃-xBi(Mg_0.5Ti_0.5)O₃ ((1?x)BST-xBMT) relaxor ferroelectric ceramics were prepared by a conventional solid-state method. In this work, the microstructure, dielectric properties, and pulsed charge–discharge properties were investigated. The doping of BMT caused a decrease in the surface energy and grain boundary energy, and contributed to the formation of polar nanoregions (PNRs). The existence of PNRs was confirmed by piezoresponse force microscopy measurements (PFM) on the 0.8BST-0.2BMT ceramic. The PNRs responded quickly under an AC voltage, thus the pulsed charge–discharge time was short (<80 ns), aiming to realize time compression to improve the power density (P_D). The PNRs were not closely connected to each other and adverse to the formation of leakage current and pinning, thus inhibiting charge transfer at the grain boundaries and contributing to the high energy storage efficiency (η ～ 93%). In addition, the 0.8BST-0.2BMT ceramic also displayed excellent temperature stability. The capacitance-temperature dependence satisfied the requirement of X8R (?55–150 °C, ΔC/C_{25 °C} ≤ ±15%), and η had no obvious fluctuation in the temperature range from 25 °C to 150 °C. This study could provide a successful method to achieve a temperature stable and high η, and a fast charge–discharge process.     

Structure,relaxation behaviors and nonlinear dielectric properties of BaTiO3–Bi(Ti0.5Mg0.5)O3 ceramics

(1−x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (BT–BMT, x=0–0.2, abbreviated as BT–BMT100x) ceramics were prepared by using a solid state reaction process. Their crystal structure, microstructure, conduction behavior, dielectric and tunability properties were investigated. It is found that the tetragonal phase and a pseudocubic phase coexist for x≤0.15 and transform to a pseudocubic phase at x=0.20. With the incorporation of BMT, BT–BMT becomes more insulating. The activation energies of the conduction are respectively 1.15(1) and 1.54(1) eV for grain and grain boundary of BT–BMT20. Furthermore, an abnormal nonlinear dielectric tunable behavior is observed. The dielectric permittivity first slightly increases until reaching the threshold electric field, and then suddenly decreases. This abnormal nonlinear dielectric behavior is attributed to the synergetic effects of the clamped oxygen vacancies and excessive aggregation of Bi at the grain boundaries.     

Impedance spectroscopy,B-site cation ordering and structure–property relations of (1 − x) La[Al0.9(Mg0.5Ti0.5)0.1]O3–x CaTiO3 ceramics for 5G dielectric waveguide filters

Dense (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ ceramics were synthesized via solid-state reaction. The crystal structure and microwave dielectric properties of the ceramics were systematically investigated. Rietveld refinement revealed that when x ≤ 0.2, the ceramics had a rhombohedral structure with an R-3c space group. When x ≥ 0.5, the ceramics had an orthorhombic structure with a Pbnm space group. Selected area electron diffraction and Raman spectroscopy analyses proved that the microwave dielectric ceramics had a B-site order, which accounted for the great improvement in microwave dielectric properties. The content of oxygen vacancies was identified through X-ray photoelectron spectroscopy, and the change rule of Q × f was closely related to oxygen vacancy content. The perturbation of A-site cations had an important influence on dielectric constant. Specifically, with the increase in Ti⁴⁺ content, the perturbation effect of the A-site cations was enhanced and dielectric constant increased. When x = 0.65, the temperature coefficient of resonant frequency of the (1 ? x) La[Al_0.9(Mg_0.5Ti_0.5)_0.1]O₃–x CaTiO₃ microwave dielectric ceramics was near zero. The optimal microwave dielectric properties of 0.35LaAl_0.9(Mg_0.5Ti_0.5)_0.1O₃–0.65CaTiO₃ were ε_r = 44.6, Q × f = 32,057 GHz, and τ_f = +2 ppm/°C.     

Large electric field induced strain of Bi(Mg1/2Ti1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics textured by Template Grain Growth

<001> oriented xBi(Mg_1/2Ti_1/2)O₃-(0.7-x)Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (BMT-PMN-PT) textured ceramics are successfully fabricated by the template grain growth method using BaTiO₃ platelets as template. BMT-PMN-PT textured ceramics with different BMT contents are studied in terms of crystal structure, microstructures, dielectric and ferroelectric properties, and electric field induced strain. The as-fabricated BMT-PMN-PT textured ceramics were found to have a strong orientation along <001> direction. The frequency dispersion of dielectric constant of BMT-PMN-PT textured ceramics increases gradually and its relaxability becomes stronger with increasing BMT content. A large electric-field induced strain (0.42 % at 4 kV/mm) is obtained in 0.25BMT-0.45PMN-0.3PT textured ceramics with Lotgering factor 0.94, which is about 83 % enhancement than that of the randomly oriented ceramics (0.23 % at 4 kV/mm). The strain of 0.25BMT-0.45PMN-0.3PT textured ceramics have a relatively high thermal stability, with a slight decrease from 0.42 % to 0.28 % in the temperature range of 20−100 °C. Our research suggests that 0.25BMT-0.45PMN-0.3PT textured ceramics have a greatly potential for actuator devices applications owing to its advantages of large electric field induced strain response.     

Dielectric properties and relaxor behavior of high Curie temperature (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3–Bi(Mg0.5Ti0.5)O3 Lead-free ceramics

The (1?x)(Ba_0.85Ca_0.15)(Zr_0.1Ti_0.9)O₃?xBi(Mg_0.5Ti_0.5)O₃ [(1?x)BCZT–xBMT, x=0.1–0.7] lead-free solid solution ceramics were prepared by the conventional mixed oxide method. The phase structure was investigated by X-ray diffraction and results show that a single perovskite phase was obtained in all of these samples, suggesting that the added BMT diffused into BCZT to form a solid solution. Dense ceramics with relative densities >95% were obtained, and a small amount of BMT (≤50 mol%) acted as grain growth promoter, had an evident effect on grain size growth. Further increase of the BMT content inhibited the grain growth of BCZT samples. Temperature dependence of the dielectric properties showed that all the BCZT–BMT solid solution ceramics exhibited relaxor-like characteristics. With increasing BMT content, the Curie temperature was first increased and then decreased, giving a maximum value of 218 °C for the 0.4BCZT–0.6BMT composition. Furthermore, stable dielectric constants and low losses were obtained with 0.5≤x≤0.7 in the wide temperature range, indicating that the system possess potential for high-temperature application.     

The structure evolution and microwave dielectric properties of MgAl2-x(Mg0·5Ti0.5)xO4 solid solutions

In the present work, MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ (x = 0.02, 0.04, 0.06, 0.08, 0.10) solid solutions were synthesized via the traditional solid-state reaction route. The valence state of Ti ions, crystal structural characteristics, and microwave dielectric properties were discussed. A solid solution with spinel structure was revealed by the Rietveld refinement results. The partial substitution of (Mg_0·5Ti_0.5)³⁺ for Al³⁺ lowered the sintering temperature and improved the Q × f value of MgAl₂O₄ ceramic. The MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ solid solutions with x = 0.06 can be well sintered at 1425 °C in an oxygen atmosphere for 8 h and exhibits excellent microwave dielectric properties with ε_r = 9.1, Q × f = 98,000 GHz, τ_f = −61.36 ppm/°C. The sintering temperature of MgAl_1·94(Mg_0·5Ti_0.5)_0.06O₄ microwave dielectric ceramics was approximately 200 °C lower than that of conventional MgAl₂O₄ ceramics.     

Dielectric stability in the relaxor: Na0.5Bi0.5TiO3-Ba0.8Ca0.2TiO3-Bi(Mg0.5Ti0.5)O3- NaNbO3 ceramic system

Ceramics with temperature-stable dielectric characteristics have been developed in the system: 0.6[0.85Na_0.5Bi_0.5TiO₃-(0.15-x)Ba_0.8Ca_0.2TiO₃-xBi(Mg_0.5Ti_0.5)O₃]?0.4NaNbO₃, x ≤ 0.15. Dielectric measurements exhibited relaxor ferroelectric characteristics with temperature-stable relative permittivity from ε_r~1330 ± 15% in the temperature range from ?70?°C to 215?°C and tanδ ≤ 0.02 from ?20?°C to 380?°C for x = 0 compositions. For the Bi(Mg_0.5Ti_0.5)O₃ modified compositions the temperature range of stable relative permittivity extended from ?70?°C to 400?°C, with ε_r ~ 950 ± 15% and tanδ ≤ 0.02 from ?70?°C to 260?°C. Values of dc resistivity were ~ 10⁸ Ω?m at a temperature of 300?°C and the corresponding RC constant values were in the range from 0.40 ? 0.78?s at 300?°C. All ceramic samples exhibited a linear polarisation-electric field response at maximum applied electric field of 5?kV/cm (1?kHz).     

Structural and Dielectric Properties in (1−x)BaTiO3–xBi(Mg1/2Ti1/2)O3 Ceramics (0.1 ≤ x ≤ 0.5) and Potential for High‐Voltage Multilayer Capacitors

Structural and dielectric properties of (1?x)BaTiO₃–xBi(Mg_1/2Ti_1/2)O₃ (x = 0.1–0.5) were investigated to understand the binary system and utilize it for high‐voltage, high energy density capacitors. The solubility limit for Bi(Mg_1/2Ti_1/2)O₃ in a BaTiO₃ perovskite was between x = 0.4 and x = 0.5. A phase with pseudocubic symmetry was formed for x = 0.1–0.4; a secondary phase developed at x = 0.5. Dielectric measurements showed highly diffusive and dispersive relaxor‐like characteristics from 10 to 40 mol% of Bi(Mg_1/2Ti_1/2)O₃. These compositions also showed high relative permittivity with low‐temperature coefficients of permittivity over a wide range of temperatures ?100°C–600°C. Relaxation behavior was quantitatively investigated using the Vogel–Fulcher model, which revealed the activation energy of 0.17–0.22 eV. Prototyped multilayer capacitors of 18 mm × 17 mm × 4 mm dimensions with a capacitance of 12.5 nF at 1 kHz were successfully constructed and demonstrated multiple charge–discharge characteristics up to 10 kV.     

The structure evolution and lattice energy of spinel-structured Li(Mg0.5Ti0.5)xGa5−xO8 microwave dielectric ceramics

The microwave dielectric properties of spinel-structured Li(Mg_0.5Ti_0.5)_xGa_5−xO₈ (0 ≤ x ≤ 1) ceramics were researched together with their microstructures. The X-ray diffraction and Raman spectroscopic revealed that an ordered spinel structure in 1: 3 B-site ordering with space group P4₃32 was formed in the composition range of 0 = x ≤ 0.25, and a disordered spinel with space group Fd-3m was formed in 0.5 = x ≤ 1. All the ceramics were compact with uniform grain, clear grain boundaries and high relative density (ρ_relative ≥ 95 %). With the substitution of [Mg_0.5Ti_0.5]³⁺ for Ga³⁺ increased, the dielectric constant (ε_r) increased from 10.48 to 11.28, which was related to the increased molar ionic polarizability (α_theo/V_m) and B-site bond ionicity. The temperature coefficient of the resonant frequency (τ_f) slightly increased from −66.27 ppm/°C to −61.45 ppm/°C, due to the decrease of B-site bond valence. The Q × f value firstly decreased from 125,400 GHz to 50,381 GHz and then increased to 85,360 GHz, which was affected by the intrinsic loss analyzed by lattice energy. The optimal microwave dielectric properties were obtained for LiMg_0.5Ti_0.5Ga₄O₈ ceramic (x = 1) sintered at 1260 °C with ε_r = 11.28, Q × f = 85,360 GHz and τ_f = −61.45 ppm/°C.     

Dielectric temperature stability of Nb-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

In this study, the phase structure, microstructure and dielectric properties of Bi_0.5(Na_0.78K_0.22)_0.5(Ti_1-xNb_x)O₃ lead-free ceramics prepared by traditional solid phase sintering method were studied. The second phase pyrochlore bismuth titanate (Bi₂Ti₂O₇) was produced in the system after introduction of Nb⁵⁺. The dielectric constant of the sample (x = 0.03) sintered at 1130 °C at room temperature reached a maximum of 1841, and the dielectric loss was 0.045 minimum. It had been found that the K⁺ and Nb⁵⁺ co-doped Bi_0.5Na_0.5TiO₃ (BNT) lead-free ceramics exhibited outstanding dielectric-temperature stability within 100–400 °C with T_cc ≤±15%. Result of this research provides a valuable reference for application of BNT based capacitors in high temperature field.     

Hexavalent (Me - W/Mo)-modified (Ba,Ca)TiO3-Bi(Mg,Me)O3 perovskites for high-temperature dielectrics

We report on the synthesis of complex lead-free perovskite-type (1−x)(Ba_0.8Ca_0.2)TiO₃–xBi(Mg_0.75W_0.25)O₃ (BCT-xBMW) and (1−x)(Ba_0.8Ca_0.2)TiO₃-xBi(Mg_0.75Mo_0.25)O₃ (BCT-xBMM) solid solutions via conventional solid-state reaction route. The sintering temperature was adjusted as a function of composition x to obtain dense samples (relative densities over 95%) at the same time minimizing bismuth evaporation. X-ray diffraction analysis shows the formation of single-phase perovskites for 0 ≤ x ≤ 0.10 in the BCT-xBMW series and increasing concentrations of impurity phases for x ≥ 0.15 and for x ≥ 0.05 in BCT-xBMM. A transition from a tetragonal to pseudo-cubic perovskite structure is observed in BCT-xBMW and BCT-xBMM at x = 0.05. The dielectric response has been characterized between −60°C and 300°C for BCT-xBMW, and between 30°C and 300°C for BCT-xBMM using impedance spectroscopy, showing a transition from ferroelectric to relaxor-like behavior at x ≥ 0.05. Additional polarization and Raman spectroscopy measurements reveal the occurrence of highly disordered systems. Analysis of the Raman spectra indicates structural phase changes and lattice modifications caused by chemical substitution. For the composition 0.8Ba_0.8Ca_0.2TiO₃-0.2Bi(Mg_0.75W_0.25)O₃, a temperature-stable permittivity of about 600 (±15% between −60°C and 300°C) and small losses of tanδ < 0.02 for T ≤ 230°C at 1 kHz are observed_, making it a suitable dielectric material for high-temperature capacitors.     

Large Strain Response and Fatigue‐Resistant Behavior in Ternary Bi0.5Na0.5TiO3–BaTiO3–Bi(Zn0.5Ti0.5)O3 Solid Solutions

A ternary solid solution (1 ? x)(0.88Bi_0.5Na_0.5TiO₃–0.12BaTiO₃)‐xBi(Zn_0.5Ti_0.5)O₃ (BNBZT, BNBZTx) was designed and fabricated using the traditional solid‐state reaction method. The temperature and composition dependence of dielectric, ferroelectric, piezoelectric, and fatigue properties were systematically investigated and a schematic phase diagram was proposed. The substitution with Bi(Zn_0.5Ti_0.5)O₃ was found to shift the phase transition (ferroelectric tetragonal to relaxor pseudocubic phase) to lower temperatures. At a critical composition x of 0.05, large electric‐field‐induced strain response with normalized strain S_max/E_max as high as 526 pm/V was obtained under a moderate field of 4 kV/mm around room temperature. The strain exhibited good temperature stability within the temperature range of 25°C–120°C. In addition, excellent fatigue‐resistant behavior was observed in the proposed BNBZT solid solution after 10⁶ bipolar cycles. These give the BNBZT system great potential as environmental friendly solid‐state actuator.