Influence of post-deposition annealing on electrical and optical properties of (Ta2O5)1-x - (TiO2)x thin films,x ≤ 0.08

Tantalum (Ta) and titanium (Ti) metal targets were direct current (DC) magnetron sputtered in the oxygen environment by varying its relative areas to deposit (Ta₂O₅)_1-x- (TiO₂)_x (TTO_x) thin films, with x = 0, 0.03, 0.06, and 0.08, onto the boron-doped p-silicon (1 0 0) and optically polished quartz substrates, at room temperature; and were annealed at 500, 600, 700, and 800 °C, for 1.5 h. The thin films annealed at and above 600 °C show the Ta₂O₅ structure. The leakage current density and capacitance-voltage (C–V) characteristics were measured for TTO_x, x ≤ 0.08, assisted Ag/TTO_x/p-Si metal– oxide– semiconductor (MOS) structures. The leakage current density was found minimum, for the films annealed at 800 °C, for all the prepared TTO_x films, x ≤ 0.08. The minimum leakage current density 1.6 × 10^?8 A/cm², at 3.5 × 10⁵ V/cm electric field, was observed for x = 0.03, annealed at 800 °C, among the prepared compositions. The prepared TTO_0.03 films, annealed at 700 °C show maximum dielectric constant 39, at 1 MHz. The optical parameters, viz., refractive index (n), extinction coefficient (k), and optical band gap (E_g) of the films, with x = 0.03, prepared on quartz substrates, were determined from their optical transmittance plots. The values of n and k of the crystalline films were observed increasing from 2.123 to 2.143, and 0.099 to 0.130, respectively, at 550 nm wavelength; and E_g decreasing from 3.95 to 3.89 eV with the increasing annealing temperature, from 600 to 800 °C. Ohmic emission, in the lower electric field; Schottky and space-charge- limited current conduction mechanisms, in the intermediate to higher electric fields, were generally envisaged from the current-voltage characteristics in the prepared Ag/TTO_0.03/p-Si structures.     

Photo-electrochemical performance of Cd1−xPbxS (0≤x≤1) thin films

This paper discusses chemical synthesis of Cd_1?xPb_xS (0≤x≤1) thin film layers and their photo-electrochemical properties with special reference to PEC parameters. Previously optimized conditions were used for the deposition. The electrode/electrolyte interfaces were then formed between the Cd_1?xPb_xS thin film layers and a sulphide/polysulphide (1 M) redox couple and investigated through the various photo-electrochemical (PEC) properties to assess suitability to convert solar energy into electrical energy.Increase in short circuit current (I_sc) and open circuit voltage (V_oc) was observed with increased composition and attain maximum at x=0.175. Power conversion efficiency and fill factor were found to be 0.163% and 46.2% respectively for the composition parameter x=0.175.     

Structure,optical, and electrical properties of (Mn1.56Co0.96Ni0.48O4)1−x(LaMn0.6Al0.4O3)x composite thin films

In this study, a series of (Mn_1.56Co_0.96Ni_0.48O₄)_1−x(LaMn_0.6Al_0.4O₃)_x composite thin films was synthesized on silicon (100) substrates by chemical solution deposition method. Addition of LaMn_0.6Al_0.4O₃ aided in improvement in the film morphology and density, while keeping the electrical properties similar. More importantly, the cation redistribution, in particular, the Al³⁺ entering into Mn_1.56Co_0.96Ni_0.48O₄ grains, significantly facilitated the optical absorption in the wavelength range of 0.63–2 µm, which bears significant technological interests in designing and application of infrared detectors.     

Studies on NO2 gas sensing properties of sprayed Co1−xMnxFe2O4 (0≤x≤0.5) spinel ferrite thin films

The Co_1−xMn_xFe₂O₄ (0≤x≤0.5) spinel ferrite thin films were deposited on quartz substrates by chemical spray pyrolysis technique. The effect of Mn substitution on to the structural, electrical, dielectric and NO₂ gas sensing properties of cobalt ferrite thin films was studied. The X-ray diffraction analysis reveals that deposited films exhibit spinel cubic crystal structure. The lattice constant increases with the increase in Mn²⁺ content. The decrease in resistivity with increase in temperature suggests that the films have a semiconducting nature. The room temperature dielectric properties such as dielectric constant (ε′), loss tangent (tanδ), dielectric loss (ε′′) and AC conductivity have been studied in the frequency range 20 Hz–1 MHz. The film shows the highest sensor response at moderately low (150 °C) operating temperature. The effect of operating temperature, gas concentration, film selectivity and substitution of Mn on to gas response is carefully studied. The manganese substituted cobalt ferrite films are extremely selective towards NO₂ with a 20 times gas response compared with other gases. The gas response achieved nearly 92% of its initial value after 150 days, indicating good stability of the films.     

Synthesis,structural and electrical properties of novel pyrochlores in the Bi2O3–CuO–Ta2O5 ternary system

A series of non-stoichiometric cubic pyrochlores with general formula, Bi_3?xCu_1.8Ta_3+xO_13.8+x (BCT) was successfully prepared by solid state reaction at the firing temperature of 950 °C over 2 days. The solid solution mechanism is proposed as one-to-one replacement of Bi³⁺ for Ta⁵⁺, together with a variation in oxygen content in order to achieve electroneutrality. The solid solution limit is confirmed by X-ray diffraction technique (XRD) for which linear variation of lattice constants is observed at 0 ≤ x ≤ 0.6. The refined lattice constants are found to be in the range of 10.4838 (8) Å–10.5184 (4) Å and the grain sizes of these samples determined by scanning electron microscopy (SEM) fall between 1 and 40 μm. Meanwhile, thermal analyses show no physical or chemical change for the prepared pyrochlores. The relative densities of the densified pellets for AC impedance measurements are above 85% and the measured relative permittivity, ?′ and dielectric loss, tan δ for composition, x = 0.2 at ambient temperature are ～60 and 0.07 at 1 MHz, respectively. The calculated activation energies are 0.32–0.40 eV and the conductivity values, Y′ are in the order of 10^?3 at 400 °C. The conduction mechanisms of BCT pyrochlores are probably attributed to the oxygen non-stoichiometry and mixed valency of copper within the structure.     

Fabrication and characterization of MOCVD (In1-xAlx)2O3 (0.1≤x≤0.6) ternary films

A series of (In_1-xAl_x)₂O₃ (0.1 ≤ x ≤ 0.6) films with tunable bandgap were grown on MgO (100) substrates by MOCVD. The influences of chemical compositions and growth temperatures on the film properties were studied systematically. XRD analyses indicated that the film quality degraded from crystalline to amorphous structure as Al concentration (x) increased. The (In_1-xAl_x)₂O₃ films prepared at 700 °C exhibited better film crystallinity than those of the ones grown at 600 °C. The films prepared at 700 °C with x = 0.1–0.3 showed an epitaxial In₂O₃ <111> orientation with the corresponding growth relationship of In₂O₃ (111)∥MgO (100). The film with x = 0.2 exhibited the best crystallinity and the largest grain size of 25.9 nm. The Hall mobilities and resistivities of the films were influenced evidently by Al concentrations. The Hall mobility showed a monotonous decrease from 12 to 1.1 cm²V^?1s^?1 as x increased from 0.1 to 0.6. The lowest resistivity of 9.2 × 10^?3 Ω cm was acquired for the film with x = 0.2. The average transmittances in the visible region for all the films were beyond 83%. The bandgap of the (In_1-xAl_x)₂O₃ films can be regulated in the range of 3.85–4.88 eV by changing Al concentrations from 0.1 to 0.6.     

Varistor and electrical properties of MgO.(Fe2O3)1−x(Bi2O3)x ceramics

In this study, MgO.(Fe₂O₃)_1−x(Bi₂O₃)_x (x = 0.01, 0.02, 0.04, 0.08) samples were prepared by the conventional ceramic process. Microstructure studies revealed that the samples contain MgFe₂O₄ grains surrounded by insulating Bi₂O₃-rich phases. DC electrical resistivity of the samples was increased by Bi₂O₃ content up to 1.1 MΩ.cm for the sample with x = 0.08. Current density- electric field investigations suggested that the samples with x = 0.01, 0.02 and 0.04 exhibited varistor properties. The sample with x = 0.01 showed excellent varistor properties with a non-linear coefficient of 45 and a threshold electric field value of 160 V/cm. Variation of D.C electrical conductivity versus temperature indicated that the activation energy values for the conduction were increased by Bi₂O₃ content from 0.334(5) eV to 0.857(5) eV. A.C electrical conductivity spectra of the samples obey the universal power law and the charge transport mechanism is based on electron hopping via sudden translational motion between the ferric and ferrous ions.     

Morphological,structural, dielectric and electrical properties of PEO–ZnO nanodielectric films

The morphological, structural, dielectric and electrical properties of aqueous solution-cast prepared poly(ethylene oxide)–zinc oxide (PEO–ZnO) nanocomposite films have been investigated as a function of ZnO nanoparticle concentrations up to 5 wt%. Scanning electron microscopy (SEM) images of these films show that the morphology of pristine PEO aggregated spherulites changes into fluffy, voluminous and highly porous with dispersion of ZnO nanoparticles into the PEO matrix. X-ray diffraction (XRD) study confirms that the crystalline phase of PEO greatly reduces at 1 wt% ZnO, and it again increases gradually with further increase of ZnO concentration. The dielectric relaxation spectroscopy (DRS) over the frequency range 20 Hz–1 MHz reveals that the real part of complex dielectric permittivity at audio frequencies decreases non-linearly whereas it remains almost constant at radio frequencies for these polymeric nanocomposites. Dispersion of nanosize ZnO particles into the PEO matrix reduces the values of dielectric permittivity which also exhibits a correlation with the dispersivity of ZnO nanoparticles. The relaxation peaks observed in the dielectric loss tangent and electric modulus spectra reveal that the electrostatic interactions of nanoscale ZnO particles with the ethylene oxide functional dipolar group of PEO monomer units decrease the local chain segmental dynamics of the polymer. Real part of ac conductivity spectra of these films have been analyzed by power law fit over the audio and radio frequency regions, respectively, and the obtained dc conductivity values for these regions differ by more than two orders of magnitude. The temperature dependent relaxation time and dc conductivity values of the nanodielectric material obey the Arrhenius relation of activation energies and confirm a correlation between dc conductivity and PEO chain segmental motion which is exactly identical to the characteristics of solid polymer electrolytes. Results imply that these nanocomposite materials can serve as low permittivity flexible nanodielectric for radio frequency microelectronic devices and also as electrical insulator for audio frequency operating conventional devices in addition to their suitability in preparation of solid polymer electrolytes.     

Microwave dielectric properties of the (BaxSr1−x)TiO3 thin films on alumina substrate

Barium strontium titanate, (Ba_xSr_1?x)TiO₃ (BST) thin films have been prepared on alumina substrate by sol–gel technique. The X-ray patterns analysis indicated that the thin films are perovskite and polycrystalline structure. The interdigital electrode with 140 nm thickness Au/Ti was fabricated on the film with the finger length of 80 μm, width of 10 μm and gaps of 5 μm. The temperature dependence of dielectric constant of the BST thin films in the range from ?50 °C to 50 °C was measured at 1 MHz. The dielectric properties of the BST thin films were measured by HP 8510C vector network analyzer from 50 MHz to 20 GHz.     

Enhanced magnetic,ferroelectric, and photocatalytic properties of (1-x)BiFeO3-xBaTiO3 (0.0 ≤ x ≤ 0.4) powders

The magnetic, ferroelectric, and photocatalytic properties of (1-x)BiFeO₃-xBaTiO₃ (0.0 ≤ x ≤ 0.4) powders synthesized by sol-gel method have been investigated. X-ray diffractometry confirms that the phase of the samples changed from rhombohedral to cubic with the increase in BaTiO₃ content. The grain size decreases and the particle shape becomes homogeneous with the introduction of BaTiO₃. BaTiO₃ substitution enhances the multiferroic properties of the ceramics and the maximum remnant magnetization (0.261 emu/g) and remnant polarization (20 μC/cm²) have acquired in 0.8BiFeO₃-0.2BaTiO₃ and 0.7BiFeO₃-0.3BaTiO₃, respectively. The absorbance in ultraviolet and visible light regions is improved obviously for powder with x = 0.3. The energy band gap of the samples decreases from 2.06 eV to 1.57 eV with the introduction of BaTiO₃, indicating that the excitation rate of photogenerated electron-hole pairs is improved. The highest methylene blue degradation efficiency of ~62% within 3 h under the visible light is achieved in the 0.7BiFeO₃-0.3BaTiO₃ which can be attributed to its suitable energy band gap and large remnant polarization.     

Structural,optical, and electrical properties of conducting p-type transparent Cu–Cr–O thin films

Cu–Cr–O films were prepared by DC magnetron co-sputtering using Cu and Cr targets on quartz substrates. The films were then annealed at temperatures ranging from 400 °C to 900 °C for 2 h under a controlled Ar atmosphere. The as-deposited and 400 °C-annealed films were amorphous, semi-transparent, and insulated. After annealing at 500 °C, the Cu–Cr–O films contained a mixture of monoclinic CuO and spinel CuCr₂O₄ phases. Annealing at 600 °C led to the formation of delafossite CuCrO₂ phases. When the annealing was further increased to temperatures above 700 °C, the films exhibited a pure delafossite CuCrO₂ phase. The crystallinity and grain size also increased with the annealing temperature. The formation of the delafossite CuCrO₂ phase during post-annealing processing was in good agreement with thermodynamics. The optimum conductivity and transparency were achieved for the film annealed at approximately 700 °C with a figure of merit of 1.51×10⁻⁸ Ω⁻¹ (i.e., electrical resistivity of up to 5.13 Ω-cm and visible light transmittance of up to 58.3%). The lower formation temperature and superior properties of CuCrO₂ found in this study indicated the higher potential of this material for practical applications compared to CuAlO₂.     

Influence of TiO2 doping on thermo-optical properties of pyrochlore Sm2(Zr1–xTix)2O7 (0≤x≤0.15) ceramics

Sm₂(Zr_1–xTi_x)₂O₇ (0≤x≤0.15) ceramics have been fabricated by pressureless-sintering method at 1973 K for 10 h in air. The influence of TiO₂ doping on microstructure and thermo-optical properties of Sm₂(Zr_1–xTi_x)₂O₇ ceramics is investigated by X-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. The partial substitution of Ti⁴⁺ for Zr⁴⁺ results in a significant increase in emissivity at low wavelengths contrasted with undoped Sm₂Zr₂O₇. Sm₂(Zr_0.85Ti_0.15)₂O₇ ceramic exhibits a high emissivity of above 0.70 at 1073 K in a wavelength range of 3–16 µm, where the highest value at this temperature is more than 0.90 especially in the wavelength range of 9–14 µm. FT-IR spectra and optical absorption spectra unveil the mechanisms of enhanced emissivity in Sm₂(Zr_1–xTi_x)₂O₇ (0.05≤x≤0.15) ceramics in the intermediate infrared range, especially at the wavelengths of 3–8 µm, due to Ti⁴⁺ ion substitution for Zr⁴⁺ ion.     

Influence of cation order on crystal structure and microwave dielectric properties in xLi4/3Ti5/3O4-(1-x)Mg2TiO4 (0.6 ≤ x ≤ 0.9) spinel solid solutions

Effect of order/disorder transition on microwave dielectric characteristics is reported to develop a deeper understanding of structure-property relationship in spinel ceramics. Dense xLi_4/3Ti_5/3O₄-(1-x)Mg₂TiO₄ (0.6≤x≤0.9) spinel ceramics were synthesized and characterized for structural and dielectric properties. The critical order/disorder structural transition was induced when x < 0.8, resulting in the ceramic crystallized into a primary cubic spinel phase, while when x> 0.8, the ceramic crystallized into a disordered face-centered cubic phase. The cation occupation caused this order-disorder transition, which directly influenced the variation in microwave dielectric properties. At x = 0.75 the maximum degree of order was achieved resulting in a maximum quality factor of 55,000 GHz and a near-zero τ_f = 2.9 ppm/^oC. Dielectric properties decreased sharply after x = 0.8 when the disorder face-centered cubic phase started to crystallize. All the results indicated that cation ordering/disordering plays a critical role in determining the optimum microwave dielectric properties in spinel ceramics.     

Electrical,structural and thermal properties of nanoceramic (Bi2O3)1−x−y(Ho2O3)x(Tm2O3)y ternary system

Ho₂O₃ and Tm₂O₃ doped Bi₂O₃ composite electrolyte type materials for solid oxide fuel cells (SOFCs) operating at intermediate-temperature were investigated. The bismuth-based ceramic powders were produced by using conventional solid-state synthesis techniques. The products were characterized by means of scanning electron microscopy (SEM), X-ray powder diffraction (XRD), differential thermal analysis/thermal gravimetry (DTA/TG), and the four-point probe technique (4PPT). XRD and DTA/TG measurements indicate that all of the samples have the stable fluorite type face centered cubic (fcc) δ-phase. 4PPT measurements were performed in the temperature range 150–1000 °C in air and these measurements showed that the electrical conductivity of the samples decrease with increasing amount of Tm₂O₃. This increase in the electrical conductivity of the samples could be attributed to the increase in the numbers of highly polarizable cations and oxide ion vacancies. The highest conductivity value was found as 5.31×10^?1 Ω cm^?1 for the (Bi₂O₃)_1?x?y(Ho₂O₃)_x(Tm₂O₃)_y ternary system (for x=20 and y=5 mol%) at 1000 °C. The activation energies of the samples were calculated from log σ graphics versus 1000/T. These calculated results showed that the translation motion of the charge carriers, oxygen vacancies, and space charge polarizations are responsible for the change in activation energy as a function of temperature.     

Synthesis,structural, electrical and magnetic properties of Bi2Fe4-xGaxO9 (0 ≤ x ≤ 1.6)

We investigate the electrical and magnetic properties of the Bi₂Fe_4-xGa_xO₉ (0?≤?x?≤?1.6) polycrystalline samples synthesized via solid-state reaction technique. Magnetic susceptibility measurements reveal that lightly doped samples (x?<?0.8) undergo successive transitions, from high-temperature paramagnetic to antiferromagnetic phase followed by a low-temperature spin-glass state while the samples with heavy doping (x?>?0.8) demonstrate paramagnetic to spin-glass (SG) transition. The variation of irreversible temperature obtained from zero field cooling (ZFC) and field cooling (FC) susceptibilities versus measured magnetic field and low-temperature magnetic hysteresis (M-H) loops support the existence of spin-glass phase. The dielectric constant (?_r) of Bi₂Fe_4-xGa_xO₉ with Ga-dilution reveals a weak-temperature sensitivity in high-temperature range (300?K?≤?T?≤?550?K), which is advantageous for high temperature capacitor applications and electronic devices.     

Structural and electrical properties of sol–gel-derived Al-doped bismuth ferrite thin films

Al-doped BiFeO₃ (BiFe_(1?x)Al_xO₃) thin films with small doping content (x=0, 0.05, and 0.1) were grown on Pt(111)/TiO₂/SiO₂/Si substrates at the annealing temperature of 550 °C for 5 min in air by the sol–gel method. The crystalline structure, as well as surface and cross section morphology were studied by X-ray diffraction and scanning electron microscope, respectively. The dielectric constant of BiFeO₃ film was approximately 71 at 100 kHz, and it increased to 91 and 96 in the 5% and 10% Al-doped BiFeO₃ films, respectively. The substitution of Al atoms in BiFeO₃ thin films reduced the leakage current obviously. At an applied electric field of 260 kV/cm, the leakage current density of the undoped BiFeO₃ films was 3.97×10^?4 A/cm², while in the 10% Al-substitution BiFeO₃ thin films it was reduced to 8.4×10^?7 A/cm². The obtained values of 2P_r were 63 μC/cm² and 54 μC/cm² in the 5% and 10% Al-doped BiFeO₃ films at 2 kHz, respectively.     

Magnetic and electrical properties of single-phase multiferroic (1-x)Pb(Zr0.52Ti0.48)O3–xPb(Fe0.5Nb0.5)O3 thin films prepared by sol-gel route

Single-phase multiferroic (1-x)Pb(Zr_0.52Ti_0.48)O₃-xPb(Fe_0.5Nb_0.5)O₃ (0≤x≤0.5) thin films were synthesized by sol-gel route and characterized to understand their structural, electrical, and magnetic properties. The films were thermally treated by conventional furnace (CFA) and rapid thermal annealing (RTA). A pyrochlore-free perovskite phase is stabilized only by RTA in samples with high Fe³⁺/Nb⁵⁺ content. The films displayed excellent dielectric and ferroelectric properties in the whole concentration range, with saturated hysteresis loops and remanent polarization values of ～15μC/cm². Films with x>0.3 showed ferromagnetic behavior at room temperature. Consequently, the multiferroic behavior in the films occurs in a different concentration range than that observed in bulk ceramics. The origin of the weak ferromagnetism is discussed.     

Structural,electrical, and magnetic transport properties of La0.72Ca0.28Mn1−xCrxO3 (0 ≤ x ≤ 0.06) ceramics

To obtain comprehensive materials with both high temperature coefficient of resistivity (TCR) and magnetoresistance (MR) at low magnetic fields, polycrystalline La_0.72Ca_0.28Mn_1?xCr_xO₃ (x = 0, 0.02, 0.04, 0.06) ceramics were prepared herein by sol–gel method. Electronic configuration of Cr³⁺ ions is similar to that of Mn⁴⁺ ions, therefore, successive substitution of Mn with Cr increases electrical resistivity and decreases metal–insulator transition temperature of ceramics, even yielding hump-like feature for Cr-rich (x = 0.06) samples. The best TCR (28.50%·K^?1) and MR (72.37%) values were obtained simultaneously at Cr dopant content of 0.02 (La_0.72Ca_0.28Mn_0.98Cr_0.02O₃). Strong response of the material to temperature and magnetic field was caused by minimal symmetry of orthorhombic structure and the most robust Jahn–Teller distortion. With increasing Cr content, Mn³⁺/Mn⁴⁺ or Mn³⁺/Cr³⁺ double exchange was diluted, and Cr³⁺/Cr³⁺ or Cr³⁺/Mn⁴⁺ superexchange was promoted. However, the internal competition effect was not conducive to the improvement of material properties.     

Mechanical,physical and gamma ray shielding properties of xPbO-(50-x) MoO3–50V2O5 (25 ≤ x ≤ 45 mol %) glass system

In this study, five different glasses encoded Pb25, Pb30, Pb35, Pb40 and Pb45 based on xPbO- (50-x) MoO₃–50V₂O₅ (25 ≤ x ≤ 45 mol %) glass system were fabricated. MCNPX code, XCOM and XMuDat have been utilized to compute the mass attenuation coefficient (μ_m) values of the xPbO-(50-x)MoO3–50V₂O₅ glass system at 0.015–15 MeV photon energies. X-ray diffraction (XRD), was characterized for fabricated glasses. Moreover, different shielding parameters such as Half Value Layer, Tenth Value Layer, relaxation length, effective atomic numbers and effective electron densities, basic gamma-ray attenuation properties such as Exposure Buildup Factors (EBF) and Energy Absorption Buildup Factors (EABF) at different penetration depths, Effective Removal Cross Section against fast neutrons have been calculated. In addition to nuclear radiation shielding parameters, numerous physical and mechanical parameters were determined. The experimental elastic modulus results were compared using the theoretical models Makishima-Mackenzie and Rocherulle model. The values of these moduli have been compared to their experimental values. The results observed that the composition has the highest value of PbO (45 mol. %) showed excellent nuclear radiation shielding and elastic properties.     

Structure,dielectric, and ferroelectric properties of (1-x)Bi0.5Na0.5TiO3 – X K0.5Na0.5NbO3 (0 ≤ x ≤ 0.1) solid solution

The correlation of the phase structure, dielectric, and ferroelectric properties of lead-free (1-x)(Na_0.5Bi_0.5)TiO₃–xK_0.5Na_0.5NbO₃ (NBTKNx) (0 = x ≤ 0.1) polycrystalline ceramics, fabricated via a solid state reaction technique, were investigated. The Rietveld refinement allowed identifying the crystallographic transformation from a rhombohedral to a coexisting rhombohedral-tetragonal or tetragonal long range-ordered ferroelectric (FE) phase. The dielectric investigations showed an increase of the dielectric diffuseness (1.53 = γ ≤ 1.73) and a clear shift of the depolarization temperature (T_d) to a lower temperature while increasing substitution. More importantly, the lattice disorder also generated a plateau-like dielectric anomaly, leading to a thermally stable ϵ_r ∼2859 ± 20% (120–500 °C) and ∼3112 ± 10% (120–420 °C) for x = 0.075 and 0.1 samples, respectively. At room temperature (RT), Raman spectroscopy investigations revealed a downshift of the frequencies as a function of the composition with an inhomogeneous broadening of the Raman lines. On heating, Raman spectra showed changes in the region where the dielectric transitions are observed. Moreover, the composition dependence of the current peaks in the I-E loops confirmed the occurrence of a phase transition from a non-ergodic polar phase to an ergodic weakly polar after the applying of an electric field of 60 kV/cm⁻¹.