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1.
《Ceramics International》2016,42(13):14543-14547
Cu(In1−xGax)Se2 (CIGS) thin films were prepared by RF magnetron sputtering from a single quaternary target at multiple processing parameters. The structural, compositional, and electrical properties of the as-deposited films were systematically investigated by XRD, Raman, SEM, and Hall effects analysis. The results demonstrate that by adjusting the processing parameters, the CIGS thin films with a preferential orientation along the (112) direction which exhibited single chalcopyrite phase were obtained. The films deposited at relatively higher substrate temperature, sputtering power, and Ar pressure exhibited favorable stoichiometric ratio (Cu/(In+Ga):0.8–0.9 and Ga/(In+Ga):0.25–0.36) with grain size of about 1–1.5 µm, and desirable electrical properties with p-type carrier concentration of 1016−1017 cm−3 and carrier mobility of 10–60 cm2/Vs. The CIGS layers are expected to fabricate high efficiency thin film solar cells. 相似文献
2.
To compensate for bismuth loss that occurred during the film deposition process, Bi1.5Zn1.0Nb1.5O7 (BZN) thin films were deposited at room temperature from the ceramic targets containing various excess amounts of bismuth (0–20 mol%) on Pt/TiO2/SiO2/Si substrates by using RF magnetron sputtering technique. The effect of bismuth excess content on the microstructure and electrical properties of BZN thin films was studied. The microstructure and chemical states of the thin films were studied by SEM and XPS. EPMA was employed to assess the film stoichiometry. The X-ray diffraction analysis reveals that the BZN thin films exhibit the amorphous structure in nature. An appropriate amount of excess bismuth improves the dielectric and electrical properties of BZN thin films, while too much excess bismuth leads to deterioration of the properties. BZN thin film with 5 mol% excess bismuth exhibits a dielectric constant of 61 with a loss of 0.4% at 10 kHz and leakage current of 7.26×10?7 A/cm2 at an electric field of 200 kV/cm. 相似文献
3.
Prashant Thapliyal Alok S. Kandari Vijendra Lingwal N.S. Panwar G. Mohan Rao 《Ceramics International》2021,47(9):12066-12071
(Ta2O5)1-x- (TiO2)x (TTOx) thin films, with x = 0, 0.03, 0.06, 0.08, and 0.11, were deposited using magnetron direct current (DC) sputtering method onto the P/boron-silicon (1 0 0) substrates by varying areas of Tantalum and Titanium metallic targets, in oxygen environment at ambient temperature. The as-deposited thin films were annealed at temperatures ranging from 500 to 800 °C. Generally, the formation of the Ta2O5 structure was observed from the X-ray diffraction measurements of the annealed films. The capacitance of prepared metal– oxide– semiconductor (MOS) structures of Ag/TTOx/p-Si was measured at 1 MHz. The dielectric constant of the deposited films was observed altering with varying composition and annealing temperature, showing the highest value 71, at 1 MHz, for the TTOx films, x = 0.06, annealed at 700 °C. With increasing annealing temperature, from 700 to 800 °C, the leakage current density was observed, generally decreasing, from 10?5 to 10?8 A cm?2, for the prepared compositions. Among the prepared compositions, films with x = 0.06, annealed at 800 °C, having the observed value of dielectric constant 48, at 1 MHz; and the leakage current density 2.7 × 10?8 A cm?2, at the electric field of 3.5 × 105 V cm?1, show preferred potential as a dielectric for high-density silicon memory devices. 相似文献
4.
《Ceramics International》2017,43(13):9759-9768
Fabrication of highly conductive and transparent TiO2/Ag/TiO2 (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×1014, 5×1014, 1×1015, 5×1015 and 1×1016 ions/cm2). The objective of this study was to investigate the effect of N+ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO2 film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×1014 ions/cm2 fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×1016 ions/cm2 in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10−4 Ω cm which is minimized to 9.62×10−5 Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×1016 ions/cm2 showed maximum Haacke figure of merit (FOM) of 5.7×10−3 Ω−1. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO2 lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices. 相似文献
5.
Dense and homogeneous BaTi1-xSnxO3 (BTS, x = 0.1, 0.15, 0.2, 0.25, and 0.3) thin films are prepared by sol-gel and spin-coating soft chemistry, which is a simple, repeatable and quality-controlled method. The effects of Sn content on the structure and dielectric properties are systemically studied. The BTS thin film with 0.25 mol% Sn is found to exhibit a moderate dielectric constant of 225–398, a high tunability of 43.3% under a low bias electric field of 8 kV/mm, and a corresponding leakage current density of 6.2×10?8 A/cm2. These improvements are a result of the enhancement in relaxor characteristics, the good crystallization conditions leading to a denser and more uniform structure, as well as the inhibition of oxygen vacancies resulting from the suppression of electronic transition from Ti4+ to Ti3+. The findings reported in this work provide a simple and effective way to prepare excellent tunable thin films that show great potential for the development of electrically tunable components and devices. 相似文献
6.
《Ceramics International》2017,43(7):5654-5660
Sb doped SnO2 thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO2 lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO2 thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10−4 Ω cm at 7.65/cm2 and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed. 相似文献
7.
《Ceramics International》2022,48(20):29951-29958
Lead-free Ba(Zr0.35Ti0.65)O3(short as BZT35) ferroelectric thin films are prepared by RF magnetron sputtering on Pt/Ti/SiO2/Si substrates. Effects of argon-to-oxygen (short as Ar/O2) ratios on phase transition, dielectric and energy storage properties are studied. The research found that all thin films are perovskite structures. With the decrease of Ar/O2, the oxygen vacancies (OVs) in the film are effectively suppressed, which promotes the film to obtain a larger dielectric constant, smaller dielectric loss, and lower leakage current density. The BZT35 film prepared under Ar/O2 = 40:10 has excellent energy storage density (48.03 J/cm3) and efficiency (87.7%) because of its elongated hysteresis loop, the largest polarization difference (ΔP = 22.91 μC/cm2), higher breakdown field strength (Eb = 4.50 MV/cm) and lower leakage current density (J = 2.3 × 10?5 A/cm2) and high power density of 7.94 MW/cm3. In addition, the BZT35 film also has excellent frequency stability (500 Hz-20 kHz). These excellent properties show that BZT35 has very broad application prospects in energy storage. 相似文献
8.
《Ceramics International》2017,43(17):15194-15200
High permittivity (high k) metal-oxide thin films fabricated via solution processes have recently received much attention for the construction of low-operating voltage and high-performance thin-film transistors (TFTs). In this report, amorphous ytterbium oxide (Yb2O3) thin films were fabricated by spin coating and their applications in TFTs were explored. The physical properties of the solution-processed Yb2O3 thin films processed at different annealing temperatures were systematically investigated using various characterization techniques. To explore the feasibility of the Yb2O3 thin films as gate dielectrics for oxide TFTs, In2O3 TFTs based on Yb2O3 dielectrics were integrated. All the devices could be operated at 3 V, which is critical for the applications in portable, battery-driven, and low-power electronic devices. The optimized In2O3/Yb2O3 TFT exhibits high electrical performances, including field-effect mobility of 4.98 cm2/V s, on/off current ratio of ~ 106, turn-on voltage around 0 V, and subthreshold swing of 70 mV/decade, respectively. To demonstrate the potential of In2O3/Yb2O3 TFT toward more complex logic application, the unipolar inverter was further constructed. 相似文献
9.
Microwave dielectric and nonlinear optical studies on radio‐frequency sputtered Dy2O3‐doped KNN thin films
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Mahesh Peddigari Vivek Patel Gyan Prakash Bharti Alika Khare Dobbidi Pamu 《Journal of the American Ceramic Society》2017,100(7):3013-3023
We report the effect of oxygen mixing percentage (OMP) on structural, microstructural, dielectric, linear, and nonlinear optical properties of Dy2O3‐doped (K0.5Na0.5)NbO3 thin films. The (K0.5Na0.5)NbO3 + 0.5 wt%Dy2O3 (KNN05D) ferroelectric thin films were deposited on to quartz and Pt/Ti/SiO2/Si substrates by RF magnetron sputtering. An increase in the refractive index from 2.08 to 2.21 and a decrease in the optical bandgap from 4.30 to 4.28 eV indicate the improvement in crystallinity, which is also confirmed from Raman studies. A high relative permittivity (εr=281‐332) and low loss tangent (tanδ=1.2%‐1.9%) were obtained for the films deposited in 100% OMP, measured at microwave frequencies (5‐15 GHz). The leakage current of the films found to be as low as 9.90×10?9 A/cm2 at 150 kV/cm and Poole‐Frenkel emission is the dominant conduction mechanism in the films. The third order nonlinear optical properties of the KNN05D films were investigated using modified single beam z‐scan method. The third order nonlinear susceptibility (?χ(3)?) values of KNN05D films increased from 0.69×10?3 esu to 1.40×10?3 esu with an increase in OMP. The larger and positive nonlinear refractive index n2=7.04×10?6 cm2/W, and nonlinear absorption coefficient β=1.70 cm/W were obtained for the 100% OMP film, indicating that KNN05D films are good candidates for the applications in nonlinear photonics and high‐frequency devices. 相似文献
10.
《Ceramics International》2017,43(16):13371-13376
Lead free Bi0.5(Na0.8K0.2)0.5TiO3 thin films doped with BiFeO3 (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel/spin coating technique and the effects of BiFeO3 content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10−4 A/cm3, ~ 978, ~ 0.028 and ~ 74.13 μC/cm2 at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm3 and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices. 相似文献
11.
Molybdenum doped TiO2 (MTO) thin films were prepared by radio frequency (RF) magnetron sputtering at room temperature and followed by a heat treatment in a reductive atmosphere containing 90% N2 and 10% H2. XRD and FESEM were employed to evaluate the microstructure of the MTO films, revealing that the addition of molybdenum enhances the crystallization and increases the grain size of TiO2 films. The optimal electrical properties of the MTO films were obtained with 3 wt% Mo doping, producing a resistivity of 1.1×10?3 Ω cm, a carrier density of 9.7×1020 cm?3 and a mobility of 5.9 cm2/Vs. The refractive index and extinction coefficient of MTO films were also measured as a function of film porosity. The optical band gap of the MTO films ranged from 3.28 to 3.36 eV, which is greater than that of the un-doped TiO2 film. This blue shift of approximately 0.14 eV was attributed to the Burstein–Moss effect. 相似文献
12.
Samir Hamrit Kamal Djessas Kahina Medjnoun Idris Bouchama Mohammad Alam Saeed 《Ceramics International》2021,47(16):22881-22888
RF-magnetron sputtering has been carried out at room temperature to deposit vanadium-doped zinc oxide (VZO) nanostructured thin films onto flexible PEN substrates. The sputtering targets of compacted VZO nanopowder have been prepared using a rapid and inexpensive Sol-Gel synthesis followed by a supercritical drying process. Structural and morphological study of VZO particles in the targets has been carried out via X-ray diffraction and Transmission Electron Microscopy (TEM). The nanostructured thin films have been characterized to analyze the structural, morphological, electrical and optical properties as a function of vanadium content from 0 to 4 at.%. Structural characterization of VZO thin films revealed that the deposited thin films have been grown preferentially along (002) and exhibit the hexagonal wurtzite structure. The cross-sectional and microstructural analysis performed by Scanning Electron Microscopy (SEM) confirms the columnar growth of nanostructures. The deposited thin films exhibit transparent behavior with transmission >70% in the visible region. It has been observed that nanostructured thin films with vanadium content of 2% have demonstrated the lowest resistivity (6.71 × 10?4 Ω cm) with Hall mobility of 10.62 cm2 V?1 s?1. The deposited vanadium doped nanostructured thin films would have potential applications in electronic and optoelectronic devices. 相似文献
13.
Heru Zhang Wenshen Hu Binbin Wei Jiaxian Zheng Zhengbing Qi Zhoucheng Wang 《Ceramics International》2021,47(3):3267-3271
Suitable electrode materials play a decisive role in the performance of supercapacitors. In recent years, transition metal nitrides come into view because of their advantages of superior electrical conductivity exceeding the corresponding metal oxides and higher specific capacitance compared with carbon-based materials. Herein, we have successfully synthesized the binder-free Co3N thin films for high-efficiency supercapacitor by reactive magnetron sputtering. Remarkedly, the Co3N thin film electrodes can reach a high specific capacity of 47.5 mC cm?2 at a current density of 1.0 mA cm?2 along with reasonable cycling stability (78.1% remaining after 10,000 cycles). These findings have proved that the Co3N thin films have great potential applications for supercapacitors or other electrochemical energy storage devices. 相似文献
14.
G.V. Colibaba D. Rusnac V. Fedorov P. Petrenko E.V. Monaico 《Journal of the European Ceramic Society》2021,41(1):443-450
A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm3, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10–3 Ω?cm has been synthesized. The solubility limit of the Ga2O3 dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa2O4 spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10–4 Ω?cm can be grown by DC magnetron sputtering of the synthesized ceramics. 相似文献
15.
Characteristics of Transparent Conducting W‐Doped SnO2 Thin Films Prepared by Using the Magnetron Sputtering Method
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Shihui Yu Lingxia Li Zheng Sun Haoran Zheng Helei Dong Dan Xu Weifeng Zhang 《Journal of the American Ceramic Society》2015,98(4):1121-1127
Tungsten‐doped SnO2 (WTO) thin films with a given thickness of about 300 nm have been prepared by magnetron sputtering with a substrate temperature in the range 400°C–700°C. The effects of substrate temperature on the structural, optical, and electrical properties and of WTO thin films have been investigated. A texture transition from (1 1 0) to (2 1 1) crystallographic orientations has experimentally been found by X‐ray diffraction measurements as substrate temperature is raised. It was found that all thin films showed smooth surface with no cracks and high transparency (>85%) with the optical band gap ranging from 4.22 to 4.32 eV. The mobility varied from 12.89 to 22.48 cm2·(V·s)?1 without reducing the achieved high carrier concentration of about 1.6 × 1020 cm?3. Such an increase in mobility is shown to be clearly associated with the development of (2 0 0) but concurrent degradation of (1 1 0) in WTO thin films. 相似文献
16.
《Ceramics International》2015,41(6):7439-7445
Highly (001)-oriented Cu2-ySe thin films with tunable thermoelectric performances have been grown by pulsed laser deposition. By using targets with different Cu/Se ratios that further determines the copper deficiency of as-grown films, the carrier concentrations of as-grown films are tuned within a broad range from 1018 to 1021 cm−3. The optimum performance is observed at carrier concentration ~1.58×1020 cm−3. The distinct properties of Cu2-ySe thin films with nearly ideal chemical stoichiometric ratio are observed. In addition, a weak change in the electrical transport during the second-order phase transition was observed in the thin films due to the anisotropic structure of the Cu2-ySe. 相似文献
17.
《Journal of the European Ceramic Society》2014,34(15):3715-3722
The properties of sputtering targets have recently been found to affect the performances of sputtered films and the sputtering process. To develop high-quality GZO ceramic targets, the influences of Ga2O3 content and sintering temperature on the sintering behavior, microstructure, and electrical properties of GZO ceramic targets were studied.The results showed that the increase in Ga2O3 content from 3 wt% (GZO-3Ga) and 5 wt% (GZO-5Ga) not only inhibited the densification but retarded grain growth. During sintering, ZnGa2O4 phase formed before 800 °C, and Zn9Ga2O12 phase was found after sintering at 1000 °C. Moreover, after sintering at 1200 °C, the number of Zn9Ga2O12 precipitates increased at the expense of ZnGa2O4 and ZnGa2O4 disappearing completely. The relative density, grain size, and resistivity of GZO-3Ga sintered at 1400 °C in air were 99.3%, 3.3 μm, and 2.8 × 10−3 Ω cm, respectively. These properties of GZO ceramics are comparable to properties reported in the literature for AZO sintered in air. 相似文献
18.
《Ceramics International》2017,43(2):2279-2287
We have investigated the characteristics of p-type Li-doped Cu2O (LCO) films grown by radio frequency magnetron sputtering to use as p-n heterojunction for flexible and semi-transparent piezoelectric nanogenerators (PENGs). Electrical, optical, morphological properties of the LCO films were examined as a function of Ar/O2 flow ratio as well as work function. The LCO films grown at Ar/O2 ratio of 20/4 sccm film showed a p-type behavior with resistivity of 2.12 Ω-cm, mobility of 0.364 cm2/V-s, and carrier concentration of 8.07×1019 cm-3. To overcome the piezoelectric potential screening effect of conventional ZnO-based PENGs, the p-type LCO layer was employed. Due to the enhanced piezoelectric potential coupled with the reduced total capacitance, the PENG with a p-LCO/n-ZnO heterojunction demonstrates the much higher output power up to ~52 μW than PENG only with ZnO layer (7 μW). The improved output power of PENGs indicates that sputtering of the p-type LCO layer on the n-type ZnO is the effective method to overcome the limit of the ZnO-based PENGs. 相似文献
19.
The BaSn0.15Ti0.85O3 (BTS) thin films are prepared on Pt-Si substrates with thickness ranging from ~ 60?nm to ~ 380?nm by radio frequency magnetron sputtering. The effects of thickness on microstructure, surface morphologies and dielectric properties of thin films are investigated. The thickness dependence of dielectric constant is explained based on the series capacitor model that the BTS thin film is consisted by a BTS bulk layer and an interfacial layer (dead layer) between the BTS and bottom electrode. The thin films with thickness of 260?nm give the largest figure of merit of 76.9@100?kHz, while the tunability and leakage current density are 64.6% and 7.46?×?10?7 A/cm2 at 400?kV/cm, respectively. 相似文献
20.
《Ceramics International》2016,42(12):13432-13441
The current study explored the influence of Mn substitution on the electrical and magnetic properties of BiFeO3 (BFO) thin films synthesized using low cost chemical solution deposition technique. X-ray diffraction analysis revealed that pure rhombohedral phase of BiFeO3 was transformed to the tetragonal structure with P4mm symmetry on Mn substitution. A leakage current density of 5.7×10−4 A/cm2 which is about two orders of magnitude lower than pure BFO was observed in 3% Mn doped BFO thin film at an external electric field >400 kV/cm. A well saturated (p-E) loops with saturation polarization (Psat) and remanent polarization (2Pr) as high as 60.34 µC/cm2 and 25.06 µC/cm2 were observed in 10% Mn substituted BFO thin films. An escalation in dielectric tunability (nr), figure of merit (K) and quality factor (Q) were observed in suitable Mn doped BFO thin films. The magnetic measurement revealed that Mn substituted BFO thin films showed a large saturation magnetization compared to pure BFO thin film. The highest saturation ~31 emu/cc was observed for 3% Mn substituted BFO thin films. 相似文献