Preparation and characterization of Ag2ZnSn(S,Se)4 and its application in improvement of power conversion efficiency of Cu2ZnSn(S,Se)4-based solar cells

We fabricated high-quality n-type Ag₂ZnSnSe₄ (AZTSe) film with kesterite structure by using a simple solution method. A Cu₂ZnSnSe₄ (CZTSe)/AZTSe-based solar cell was designed and prepared by inserting AZTSe layer between CZTSe and CdS of the traditional CZTSe-based solar cell. Compared with the traditional device, an increase from 337 to 432 mV in open circuit voltage (V_oc) and an accompanying rise from 3.40% to 4.72% in power conversion efficiency (PCE) were observed. To well understand the PCE improvement of the CZTSe/AZTSe-based solar cells, we calculated the band alignments of CZTSe/AZTSe and CZTSe/CdS heterojunctions using first-principles calculations, demonstrating that the CZTSe/AZTSe and CZTSe/CdS interfaces have type-II and type-I band alignments, respectively. Moreover, the band offset of AZTSe/CdS is lager than the one of CZTSe/CdS. Combined with the calculation results, the mechanism of influence of the AZTSe on the PCE improvement is discussed in detail. Our conclusions show that the addition of the AZTSe layer is a potentially applicable method to obtain CZTSe-based solar cells with higher V_oc and PCE.     

Synthesis and investigation of environmental protection and earth-abundant kesterite Cu2MgxZn1-xSn(S,Se)4 thin films for solar cells

We have synthesized Cu₂Mg_xZn_1–xSn(S,Se)₄ (0?≤?x?≤?0.6) thin films by a facile sol-gel method, and studied the influence of Mg concentration on the crystal structure, surface morphology and photoelectric performance of Cu₂Mg_xZn_1–xSn(S,Se)₄ thin films systematically. It was shown that the smaller Zn²⁺ in Kesterite phase Cu₂ZnSn(S,Se)₄ will be replaced by larger Mg²⁺, forming uniform pure phase Cu₂Mg_xZn_1–xSn(S,Se)₄. The band gap of Cu₂Mg_xZn_1–xSn(S,Se)₄ films can be adjusted from 1.12 to 0.88?eV as the x value changes from 0 to 0.6. Furthermore, the Cu₂Mg_xZn_1–xSn(S,Se)₄ thin films with large grain size, smooth surface and less grain boundaries was obtained at an optimized condition of x?=?0.2. The carrier concentration of Cu₂Mg_xZn_1–xSn(S,Se)₄ thin film reaches the maximum 6.47?×?10¹⁸ cm^?3 at x?=?0.2, which is a potential material to be the absorption layer of high efficiency solar cells.     

Optoelectronic properties of Zn-doped Cu3Se2 nanosheets for photovoltaic application

Thin films of Zn-doped copper selenide (Cu₃Se₂) nanostructures with different Zn concentrations were deposited on fluorine-doped tin oxide (FTO) glass substrates by electrodeposition method. The structural, optical, electrical, and photovoltaic properties of the deposited films were investigated by different analyses. X-ray diffraction (XRD) pattern showed the crystalline and tetragonal structure of the samples. The results of XRD pattern also showed that the peaks shifted to higher angles by increasing the Zn dopant, indicating the influence of dopant on the crystalline structure of Cu₃Se₂. Electron microscopy analysis showed that the films had a sheet-like shape whose thickness changed by altering the dopant percentage; the highest number of sheets belonged to the samples with higher concentrations of dopant. The photoluminescence (PL) analysis of the Cu₃Se₂ nanostructures revealed that the peaks in the green and infrared regions shifted to shorter wavelengths and the intensity of emission peaks increased for the Zn-doped sample with the highest concentration, compared with the un-doped sample. Based on the absorption spectrum analysis, the optical energy band gap increased with raising the percentage of Zn dopant. Finally, the electrical and photovoltaic parameters of the solar cells prepared via Cu₃Se₂ nanosheets were examined. The doped sample which had the highest percentage of doping, showed the highest efficiency (η) of ~1.30%.     

Structural,optical and electrical properties of indium doped Cu2ZnSn(S,Se)4 thin films synthesized by the DC and RF reactive magnetron cosputtering

Element doping into the Cu₂ZnSn(S,Se)₄ (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu₂In_xZn_1-xSn(S,Se)₄ (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu₂ZnSnS₄ (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P_In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In³⁺ into the main lattice of CZTSSe. The partial Zn²⁺ cations were substituted by In³⁺ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P_In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P_In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P_In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm²V^?1s^?1, which is a potential material as the absorption layer of high-performance solar cells.     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.     

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Cu₂ZnSnSe₄ (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe _x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.     

Heat treatment effects on the structural and optical properties of thin Bi2(Se1-xTex)3 films

Thin layers of Bi₂-chalcogenides, in the form of Bi₂(Se_1-xTe_x)₃ films, were evaporated on glass substrates by means of the vacuum thermal evaporation. Microstructure of the as prepared layers was investigated by x-ray diffraction (XRD) analysis. Identifications of the surface morphology and roughness were determined via scanning electron microscope (SEM). Optical transmissivity spectra proved that the as prepared films have low transparency with growing trend upon increasing the wavelength beyond the infra-red region. Low transmittance was observed for the as prepared films. Heat treatment, in the form of temperature annealing, was carried out aiming at boosting the structural features and the materials transmissivity. Structural properties and surface features of the annealed films were probed also via XRD and SEM analyses. It was found that the crystal size increases while the micro-strain and the dislocation density decrease obviously due to annealing. It was also observed that the annealing process significantly enhances the materials transmission especially in the range of higher wavelengths. Optical band gap was studied after annealing at various temperatures. Notable change in the band gap value was observed as a result of annealing. The band gap of the undoped (Bi₂Se₃) materials showed significant rise from 0.14 to 1.79 eV due to annealing. Similarly, the Te-doped samples exhibited notable increase in their band gap values after annealing. For example, the optical band gap of the sample doped at x = 0.20 increased from 0.03 to 0.41 eV by annealing. On the other hand, transmittance was also enhanced by annealing. For samples treated at 250 °C for 3 h, their optical transmissivity is enhanced to over 99% at the visible near-IR range. Such significant enhancement can be ascribed to structural enhancements. With such enhancement in the optical transmissivity, optoelectronic applications including transparent electrode can be met.     

Nanoscale observation of surface potential and carrier transport in Cu2ZnSn(S,Se)4 thin films grown by sputtering-based two-step process

Stacked precursors of Cu-Zn-Sn-S were grown by radio frequency sputtering and annealed in a furnace with Se metals to form thin-film solar cell materials of Cu₂ZnSn(S,Se)₄ (CZTSSe). The samples have different absorber layer thickness of 1 to 2 μm and show conversion efficiencies up to 8.06%. Conductive atomic force microscopy and Kelvin probe force microscopy were used to explore the local electrical properties of the surface of CZTSSe thin films. The high-efficiency CZTSSe thin film exhibits significantly positive bending of surface potential around the grain boundaries. Dominant current paths along the grain boundaries are also observed. The surface electrical parameters of potential and current lead to potential solar cell applications using CZTSSe thin films, which may be an alternative choice of Cu(In,Ga)Se₂.PACS number: 08.37.-d; 61.72.Mm; 71.35.-y     

Band structure and thermoelectric properties of inkjet printed ZnO and ZnFe2O4 thin films

The band structure and thermoelectric properties of inkjet printed ZnO and ZnFe₂O₄ thin films have been investigated. The bulk pellets were prepared by a solid-state method and thin films were deposited using an inkjet printing method. Multiple print cycles were required to fabricate homogeneous films and the composition of the thin films can be varied by varying the relative amounts of liquid deposited. It was possible to obtain high thermoelectric properties of ZnO by controlling the ratios of dopant added and the temperature of the heat treatments. XRD analysis showed that the fabricated samples have a wurtzite structure and an additional ZnAl₂O₄ phase was formed with increasing Al content and sintering temperature. It was found that the band gap of Al doped ZnO becomes smaller with increasing Al content and thus the electrical conductivity of Al_x doped ZnO (x=0.04) thin films showed the highest electrical conductivity (114.10 S/cm). The ZnFe₂O₄ samples were compared against the ZnO samples. The formation of single phase cubic spinel structure of the sintered ZnFe₂O₄ samples was found and confirmed by X-ray diffraction technique. Secondary phase Fe₂O₃ was also detected for compositions with Zn (x≤0.4). Finally, we want to report that the electrical conductivity of Zn_xFe_3−xO₄ was lower than the conductivity of the Al-doped ZnO.     

Spray-deposited kesterite Cu2ZnSnS4 (CZTS): Optical,structural, and electrical investigations for solar cell applications

Kesterite Cu₂ZnSnS₄ (CZTS)-based solar devices have become a popular alternative to copper indium gallium selenide (CIGS) due to its outstanding properties such as high efficiency, non-toxicity, cost-effectiveness, suitable optoelectrical properties, and earth-abundancy. In this study, we directly fabricated CZTS films via a single-step spray pyrolysis technique, in contrast to conventional techniques where post sulfurization is required. The spray deposited CZTS films are investigated for their optical, structural, and electrical properties. The X-ray diffraction (XRD) and Raman analysis study revealed the synthesis of the phase-pure kesterite CZTS films without impurity phases. Large crystallites of CZTS are obtained at a deposition temperature of 400 °C, exhibiting a porous granular morphology with different grain sizes upon temperature variation. The size-dependent optical properties revealed that the CZTS films exhibited admirable visible light absorption of 10⁵ cm^?1 and an electronic bandgap ranging between 1.42 and 1.58 eV. The minimum dielectric loss obtained for optimized CZTS due to fewer intrinsic defects confirmed the materials’ applicability. Thus, the study provides a simple, viable route to fabricate CZTS without post-treatment to build affordable solar cells.     

Influence of annealing atmosphere on the structure, resistivity and transmittance of InZnO thin films

Dependence of the electrical and optical properties of In₂O₃–10 wt% ZnO (IZO) thin films deposited on glass substrates by RF magnetron sputtering on the annealing atmosphere was investigated. The electrical resistivities of indium zinc oxide (IZO) thin films deposited on glass substrate can be effectively decreased by annealing in an N₂ + 10% H₂ atmosphere. Higher temperature (200 °C) annealing is more effective in decreasing the electrical resistivity than lower temperature (100 °C) annealing. The lowest resistivity of 6.2 × 10⁻⁴ Ω cm was obtained by annealing at 200 °C in an N₂ + 10% H₂ atmosphere. In contrast, the resistivity was increased by annealing in an oxygen atmosphere. The transmittance of IZO films is improved by annealing regardless of the annealing temperature.     

Synthesis and study of Y0.9Ln0.1VO4 nanophosphors and Y0.9Ln0.1VO4@SiO2 luminescent nanocomposites with Ln=Eu,Dy, Er

Y_0.9Ln_0.1VO₄ nanophosphors with Ln=Eu, Dy and Er samples were prepared by hydrothermal synthesis and covered with silica (SiO₂) by the Stöber method using different reaction times. The synthesized samples were investigated by X-ray diffraction (XRD), Fourier-transform infrared (FTIR) spectroscopy, transmission electron microscopy (TEM) and photoluminescence spectroscopy (PL). XRD patterns show diffraction maxima compatible with a zircon-type structure where more intense reflexions are observed in the XRD pattern of Y_0.9Er_0.1VO₄ sample. FTIR spectra of Y_0.9Ln_0.1VO₄@SiO₂ samples reveal absorption bands which can be attributed to Si-O-Si and O-Si-O stretching bands and Si-O bending vibration. In all cases, TEM micrographs of Y_0.9Ln_0.1VO₄ phosphors show spherical nanoparticles. Nanoparticles agglomerates covered by a silica were found in TEM micrographs of Y_0.9Ln_0.1VO₄@SiO₂ samples. The thickness of the silica coating is dependent on the reaction time. PL measurements show variation of the emission intensity related to the different thickness of the silica coating.     

Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates

The influence of the ZnO buffer layer thickness on the electrical and optical properties of In₂O₃–10 wt.% ZnO and ZnO bilayers deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering were investigated. The optimum ZnO buffer layer thickness was found to be 90 nm which gives the lowest electrical resistivity of the bilayer of IZO and ZnO deposited on the PET substrate. The surface roughness decreases and diffusion of moisture and gas is more efficiently restrained, which contributes to lower the resistivity of the bilayer as the ZnO buffer layer thickness is increased. On the other hand, the total resistivity of the bilayer increases as the ZnO buffer layer thickness is increased because the resistivity of ZnO is higher than that of IZO. Introduction of a ZnO buffer layer does not nearly affect the IZO/ZnO/PET sample.     

Systematic study of optoelectronic and transport properties of cesium lead halide (Cs2PbX6; X=Cl,Br, I) double perovskites for solar cell applications

A systematic density functional theory investigation of Cs₂PbX₆ (X = Cl, Br, I) double perovskites is presented. The lattice constants are computed after structure optimization and using Birch-Murnaghan equations, which agree to the experimental literature. The mechanical stability conditions satisfy Born criteria, and the ductile nature is evidenced by the calculated Poisson's (v) and Pugh's ratios (B₀/G) because all three double perovskites exhibit values higher than the respective critical values v = 0.26 and B₀/G = 1.75. A detailed study of the optoelectronic properties reveals these double perovskites as promising candidates for future optical devices due to their direct band gaps (within 0.45–2.54 eV) and large absorption coefficients 5.95 × 10⁵ cm⁻¹, which are suitable for solar cell applications. ZT calculations demonstrate minute variations within 200–800 K and computed parameter values are quite favorable for thermoelectric applications of these materials in the future. A p-type semiconducting nature is predicted by the computed thermoelectric properties. Additionally, computed refractive indices show Cs₂PbBr₆ and Cs₂PbI₆ exhibiting super-luminescent properties in the UV range. Therefore, the studied double perovskites provide further interest for future energy conversion and photonic based technologies.     

Solution-based synthesis of dense,large grained CuIn(S,Se)2 thin films using elemental precursor

Compared with the expensive and complicated vacuum techniques, the solution-based process to deposit I-III-VI₂ chalcogenide thin films (I=Cu, III=In or Ga, VI=S or Se) has attracted great interests due to its lower cost, higher scalable production and better application in flexible substrate. Herein, a low-toxic and high-active mixture solvent comprised of 1, 2-ethanedithiol and 1,2-ethylenediamine is utilized to dissolve elemental Cu, In and S powders at 60 °C, forming the CuInS₂ (CIS) precursor solution. After spin coating and annealing in a both Ar gas and selenium atmosphere, a dense and large-grained chalcopyrite CuIn(S,Se)₂ (CISSe) thin films with a close-packed grain size of ~800 nm are prepared, eliminating a undesired fine fine-grained bottom layer. In addition, the selenization temperature of the CISSe thin films is also discussed, which influences the phase composition, crystallinity and morphology of CISSe thin films. Photovoltaic device of the CISSe-based thin films is fabricated, obtaining a power conversion efficiency of 6.2% with an active cell area of 0.5 cm² under AM 1.5 illumination.     

Tunability of optical constants of Se-Ge-Ag thin films based on change in resistivity with temperature for solar cells

Thin films of semiconductor Se₈₀Ge_20-xAg_x (x = 0, 3, 6, 9, 12 and 15 at.%) were deposited by the thermal evaporation technology. Through optical and electrical characterization, the influence of the Ag ratio on the photoelectric parameters of Se–Ge thin film was studied. The X-ray diffraction pattern showed the amorphous nature of the deposited films as well as the polycrystalline state when the films were annealed at the maximum crystallization temperature (415 K), which was determined by the first derivative of the resistivity curve with respect to temperature. The crystallization kinetics of the film was extracted from the electrical analysis by measuring the change in resistivity with temperature. The electrical results of the thin film showed three regions; namely, amorphous, extended (crystalline) and hopping. In the extended and hopping states, the activation energy and pre-exponential factors were calculated. The optical constants, extinction coefficient and refractive index were calculated using the transmittance and reflectance of the grown Se₈₀Ge_20-xAg_x films. The energy gaps of the films were estimated in the strong absorption regions. The changes in the bandgap energy of the film by thermal annealing can help to produce materials with acceptable band gaps for use as absorber layers in solar cell applications. Also, the results provide microscopic insights and studies on the structure, electr-othermal and optical properties of Ag metal-doped GeSe as a back contact of solar cells.     

Effect of substrate temperature on the physical properties of co-evaporated Sn2S3 thin films

We report the deposition of tin sulfide (Sn₂S₃) thin films by co-evaporation technique at different substrate temperatures. The influence of substrate temperature on the structural and optical properties of the thin films is investigated. X- ray diffraction (XRD) analysis and Micro-Raman studies confirm the formation of Sn₂S₃ phase. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) are used to examine the surface morphology. The transmission spectra of the deposited Sn₂S₃ thin films have been recorded in the wavelength range of 200–3000 nm using UV–vis-NIR spectrometer. Film thickness (d) and optical constants such as refractive index (n), extinction coefficient (k), real (ε₁) and imaginary (ε₂) parts of the dielectric constants of thin films are estimated from the optical transmittance. The optical band gaps of the deposited films at different substrate temperatures are in the range of 1.46–1.64 eV. Hall effect measurements confirm the n-type nature of the as-prepared Sn₂S₃ thin films.     

Characterization of Cu(In,Ga)Se2 thin films prepared by RF magnetron sputtering using a single target without selenization

Cu(In_1?xGa_x)Se₂ (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and electrical properties of the films were examined in order to develop the deposition process without post-deposition selenization. From X-ray diffraction analysis, as the substrate temperature and Ar pressure increased and RF power decreased, the crystallinity of the films improved. The scanning electron microscopy revealed that the grains became uniform and circular shape with columnar structure with increasing the substrate temperature and Ar pressure, and decreasing the RF power. The carrier concentration of CIGS films deposited at the substrate temperature of 500 °C was 2.1 × 10¹⁷ cm^?3 and the resistivity was 27 Ω cm. At the substrate temperature above 500 °C, In and Se contents in CIGS films decreased due to the evaporation and it led to the deterioration of crystallinity. It was confirmed that CIGS thin films deposited at optimal condition had similar atomic ratio to the target value even without post-deposition selenization process.     

Profound optical analysis for novel amorphous Cu2FeSnS4 thin films as an absorber layer for thin film solar cells

In this study, quaternary kesterite Cu₂FeSnS₄ (CFTS₄) has been selected due to its interesting optical and electrical characteristics. The CFTS₄ films were prepared by exploiting the chemical bath deposition process at room temperature. The films were prepared at different deposition periods (1, 3, 5 and 7 h). The EDAX technique was helped in evaluating the compositional element ratio which near to 2:1:1:4. The morphology and structure of CFTS₄ films have been examined by utilizing X-ray diffraction, and field emission scanning electron microscope techniques. XRD charts revealed the absence of sharp peaks and approved the amorphous nature of films under investigations. The transmittance and reflectance data were employed to compute the linear and nonlinear optical constants of the as-deposited CFTS₄ films. The energy gap calculations for the CFTS₄ films grown on glass substrate displayed a direct energy gap and by increasing the deposition time, a reduction in energy gap values from 1.41 to 1.19 eV was obtained. The deep analysis of linear/nonlinear optical properties as a function of deposition time has revealed many characteristics of the investigated films. Moreover, the nonlinear parameters (refractive index n₂, nonlinear absorption coefficient β_c and the third-order nonlinear optical susceptibility χ⁽³⁾) of the CFTS₄ films were boosted with rising up the film thickness and their high values imply the possibility of utilizing these films in various optoelectronic applications.