利用高阶累积量实现数字调制信号的自动识别

通信信号的自动调制识别在截获信号处理方面是一个十分重要的课题。本文针对数字调制信号的识别问题，提出了一种基于高阶累积量的分类特征，该特征有效地抑制高斯白噪声的影响，能实现对2ASK、4ASK、4PSK、2FSK、4FSK等五种数字调制信号的识别。论文进行了理论推导，并用仿真实验和实际采集数据进行了验证。     

利用幅度特性对数字信号调制方式进行识别

数字调制方式的识别对于通信信号分析有着重要的作用。针对数字信号（2ASK,4ASK,2PSK,4PSK,2FSK和4FSK）的调制方式,本文提出了一种只利用调制信号瞬时幅度特性便可以对调制信号进行识别的新算法,利用特征参数提取与决策树分类器结合对以上6种数字信号进行调制识别。首先提出了使用希尔伯特变换和解析函数对数字信...     

基于决策论的数字调制信号识别方法

以决策论为基础提出了一种改进的数字调制信号识别方法,该方法仅需4个相对简单的特征参数,就能识别2ASK、4ASK、2FSK、4FSK、2PSK、4PSK和16QAM这7种数字调制信号。仿真结果表明,该方法复杂度较低,识别正确率有较大提高,尤其对于2ASK、4ASK、MPSK/MFSK及16QAM的识别,在信噪比较低的情况下,具有较好的识别效果。     

基于高阶累积量和神经网络的数字调制识别

针对数字调制信号的识别问题,提出了一种基于高阶累积量的分类特征,该特征有效地抑制高斯白噪声的影响,能实现对2ASK、4ASK、4PSK、2FSK、4FSK等五种数字调制信号的识别。分类器采用了多层组合的神经网络分类器,不需要设定判决门限,而且在收敛速度、训练时间以及识别率方面都有很大改进。仿真结果表明,在信噪比大于7 dB时,系统的正确识别率可达95%以上。     

基于瞬时幅度与小波分析相结合的数字调制制式的自动识别

本文提出了一种基于信号瞬时幅度与小波分析相结合的数字调制制式的自动识别新算法。该算法计算简单、实时性强,能够成功识别2ASK、4ASK、2FSK、4FSK及2PSK5种信号。仿真结果表明,该算法具有较高的识别率。     

利用高阶累积量实现数字调制信号的识别

文中提出一种基于高阶累积量识别多种数字调制信号的算法。首先推导计算各信号的八阶累积量,从二、八阶累积量中提取一个特征参数,实现以更少参数识别更多信号的目的;然后,为提高MFSK的识别率,从微分后MFSK信号的四、六阶累积量中提取一个特征参数完成识别。仿真结果显示,通过利用这两个参数可以实现2 ASK/BPSK、4 ASK、8 ASK、QPSK、8 PSK、2 FSK、4 FSK、8 FSK、16 QAM、64 QAM等多种数字调制信号的识别。     

差分运算在数字调制制式识别中的应用

随着数字通信技术的发展，数字信号调制制式的识别成为近年来的研究热点，本文将差分运算应用到数字调制制式的自动识别当中，设计了一种新的算法，能够成功识别2ASK，4ASK，2FSK，4FSK及2PSK五种信号。仿真结果表明，该算法具有较高的识别率。     

基于循环谱和高阶累积量的联合模式识别方法

为完全识别当前卫星通信采用的主要调制方式,结合循环谱和高阶累积量两种信号调制识别方法的特点,提出了一种联合识别算法。该算法将循环谱特征加入到高阶累积量识别法中,联合多种特征参数判决构建识别器,首先利用循环谱完成ASK、FSK、PSK信号的类间识别以及FSK信号的类内识别,在此基础上利用高阶累积量方法完成FSK、PSK信号的类内识别。仿真结果表明,该算法能够完全区分卫星通信中主要的调制模式{ASK、2ASK、2FSK、4FSK、BPSK、QPSK},在信噪比高于5 d B时识别率达88%以上。     

基于BP神经网络的数字调制信号样式自动识别

针对2ASK，4ASK，2FSK，4FSK，BPSK和QPSK六种数字调制信号，给出了对他们进行识别的5种特征参数的定义，提出了基于BP神经网络利用较少样本分3步进行训练，来实现对数字信号调制样式自动识别的方法，最后得到了在信噪比≥8dB时较高的正确识别率。     

基于瞬时特征参数和功率谱熵的联合调制识别

针对传统的瞬时特征参数识别法在低信噪比下识别信号种类少、识别率低等问题,文中提出了一种基于瞬时特征参数与功率谱熵联合的调制识别方法。该方法通过改进后的瞬时幅度及相位特征参数对调制信号进行识别,并引入了功率谱熵特征参数,可进一步实现对更多信号的类内识别。在信号类内识别方面,采用决策树分类方法,选取合适的门限值对常用的9种数字调制信号{ASK、4ASK、2FSK、4FSK、8FSK、BPSK、QPSK、8PSK、16QAM}进行识别分类。蒙特卡洛实验结果表明,相较于现有的识别方法,文中所提出的方法增加了识别信号的种类,还提高了低信噪比情况下的信号识别准确率。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.