用于光电子器件的低成本、高反射率SOR衬底

报道了一种包含一薄层单晶硅和隐埋 Si/Si O2 布拉格反射器的 SOR衬底 .这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技术研制而成的 .在垂直光照条件下 ,这种 SOR衬底在 1.3μm处的反射率接近10 0 %     

用于光电子器件的低成本、高反射率SOR衬底

报道了一种包含一薄层单晶硅和隐埋Si／SiO2布拉格反射器的SOR衬底．这种可用于光电子器件的衬底是由硅基乳胶粘接和智能剥离技术研制而成的．在垂直光照条件下,这种SOR衬底在1.3μm处的反射率接近100%。     

SiGe技术、器件及其应用

SiGe技术和SOI技术将是21世纪硅集成的重要技术,它们相互补充,改善晶体管的速度 和性能。本文介绍了SiGe技术、器件和应用。     

"一机多用"的解决方案

本文介绍了太原电视台百姓频道在数字、模拟视音频设备共存的状态下,用较少的投资,极大地提高设备的使用率的一组方案,该方案在本频道已使用近一年,效果显著。     

Computer Calculation of Device, Circuit, Equipment, and System Reliability

A grouping into four classes is proposed for all reliability computations that are related to electronic equipment. Examples are presented of reliability computations in three of these four classes. Each of the three specific reliability tasks described was originaly undertaken to satsify an engineering need for reliability data. The form and interpretation of the print-out of the specific reliability computations is presented. The justification for the costs of these computations is indicated. The skills of the personnel used to conduct the analyses, the interfaces between the personnel, and the timing of the projects is discussed.     

Device Personalisation — Where Content Meets Device

The explosive growth of the Internet has come with increasing diversity and heterogeneity in terms of access device, device capability, network access method, bandwidth, and user preferences. Most Internet services and World Wide Web content has been designed with desktop computers in mind, and often contains rich media, such as images, audio, and video. In many cases this content is not suitable for the new (often mobile) client devices because of their limitations in terms of screen size, memory, media support, connection speed, etc. These shortcomings have prompted the need to adapt the services and content of the Internet. This is broadly known as content negotiation and requires consideration of the client device's capabilities and characteristics (both hardware and software), the connection type and speed/bandwidth, and the user's preferences.     

智能解说器及GPS智能游方案

本文对自主开发的"AVR智能电子解说器"的发展前景及趋势进行了调查,结合市场发展的新要求,在原开发项目基础上提出了进一步改进的优化方案。     

Device, circuit, and technology scaling to micron and submicron dimensions

From the discrete semiconductor component technology of the early 1960's, where the transition from the past focused on a major reduction in device size, i.e., from vacuum tubes to transistors, the emphasis from the late 1960's to the present has centered on integrating an ever-increasing number of devices on a chip. This trend has given rise to the acromyms SSI, MSI, LSI, and VLSI standing for small scale, medium scale, large scale, and very large scale integration, respectively. Following a discussion of the trends in device integration levels, four topics impacting our ability to achieve these levels are discussed from technological and engineering points of view. These are shrinking of conductor and device dimensions, known as scaling, reliability concerns in small structures, representative processes utilized in achieving small structures, and anticipated circuit delays for Insulated-Gate Field-Effect Transistors, IGFET's, at 1-µm design groundrules. The problems are numerous, and the potential solutions are even more numerous. However, it is not unreasonable to expect that these can all be sorted out during the 1980's. If this comes to pass, then one can expect IGFET integration levels of 10⁶bits of dynamic random-access memory, DRAM, storage on a 70-mm²chip, and logic circuit performance at the 1-ns level at room temperature and < 0.5 ns at liquid nitrogen temperature. The logic numbers are in the context of maximum performance achievable at maximum circuit density, and at an acceptable power dissipation level of 2 W/chip or less (where the chip area is between 0.2 and 0.3 cm²).     

Device modeling

Models of electronic devices have to express the physical structure of the device, represent its significant properties, and lead to useful equivalent circuits for circuit analysis. The criteria by which a model can be said to achieve each of these three functions are explored and it is shown, with particular reference to transistors, that the demands of each function are so different that no previously proposed model is wholly satisfactory. The wisdom of trying to achieve a general theory of modelling is consequently questioned, and it is suggested that a deliberate separation might be preferable.     

Analog Universal Active Device: Theory, Design and Applications

This paper introduces the concept of what we call analogUniversal Active Device (UAD), as a step forward from OperationalAmplifiers and other recently proposed active devices. The modelfor such a device is nothing but a two port classically knownas Nullor. To obtain practical implementations of the UAD, orNullor, a unified aproach is proposed. The basis of the approachis the use of a single cell consisting of a voltage and currentbuffer, also known as negative second-generation Current Conveyor(CCII –). We obtained the four most simple implementationsfor the UAD as a paradigm of more complex ones. Non ideal effectsof these practical implementations are theoretically analysed,particularly parasitic impedances associated to the interconnectionsof the CCII – cells, and then their influence insome simple amplifier stages. It is demonstrated that while anyUAD implementation can be used in a given application, its performanceis strongly dependent on its implementation. Also, a novel floatingstructure for a General Impedance Converter (GIC) type impedance,containing two UADs, is suggested. Simulation results are givensupporting the ideas presented here.     

ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes

We report undoped ZnO films deposited at low temperature (200°C) using plasma-enhanced chemical vapor deposition (PECVD). ZnO thin-film transistors (TFTs) fabricated using ZnO and Al₂O₃ deposited in situ by PECVD with moderate gate leakage show a field-effect mobility of 10 cm²/V s, threshold voltage of 7.5 V, subthreshold slope <1 V/dec, and current on/off ratios >10⁴. Inverter circuits fabricated using these ZnO TFTs show peak gain magnitude (dV _out/dV _in) ~5. These devices appear to be strongly limited by interface states and reducing the gate leakage results in TFTs with lower mobility. For example, ZnO TFTs fabricated with low-leakage Al₂O₃ have mobility near 0.05 cm²/V s, and five-stage ring-oscillator integrated circuits fabricated using these TFTs have a 1.2 kHz oscillation frequency at 60 V, likely limited by interface states.     

Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology

The 31 papers in this special issue focus on nanowire transistors and cover the modeling, device design and technology of these transistors. Other papers on the same topic are appearing in a special issue of the IEEE Transactions on Nanotechnology.     

一代前景诱人的新型器件——真空微电子管

描述了真空微电子器件的发展概况，特别对场发射阵列的结构设计进展、微波用场发射阵列研究、低压场发射阵列研究以及场发射平板显示器的现状进行了全面阐述。     

In-Band Device to Device (D2D) Communication and Device Discovery: A Survey

Wireless Personal Communications - Device to device (D2D) communication is one of the potentials to achieve the established standards for 5G. It represents a direct communication between two...     

串行通信接口在CPLD中的实现

分析串行通信接口的基本功能．采用自顶向下的设计方法，用原理图和VHDL语言这两种输入对串行通信接口芯片进行设计．阐述了顶层的原理图设计和各个模块的功能、实现的关键点以及解决的方法，在MAXPLUS Ⅱ编译环境下综合，得到比较理想的仿真结果，最后在Altera公司的复杂的可编程的逻辑装置(CPLD)中实现，并完成了单片机和PC机的通信。     

实用防盗报警装置

该防盗装置采用红外线技术,准确地实现多点监测,在有异常人员或物体通过预定区域时,发出声音报警,并指示出报警位置。它采用５５５单稳态电路实现报警的延时及复位功能,并在野外线路异常（断电）时报警。本文对该装置各组成部分的工作原理作了详尽的介绍。     

HDMI芯片的测试

HDMI是高清晰度多媒体接口(High-Definition Multimedia Interface)的简称。作为新一代的数字视频/音频传输标准,HDMI理论上可以支持4Gbps的数据传输率,足以支持2.25G*3bps的数据传输要求,所以已经被广泛的应用于HDTV等数字消费类产品。HDMI Source芯片的测试技术,包括在性能评价测试方法和大规模量产测试的解决方案。