Low‐Power,All Digital Phase‐Locked Loop with a Wide‐Range,High Resolution TDC

In this paper, we propose a low‐power all‐digital phase‐ locked loop (ADPLL) with a wide input range and a high resolution time‐to‐digital converter (TDC). The resolution of the proposed TDC is improved by using a phase‐interpolator and the time amplifier. The phase noise of the proposed ADPLL is improved by using a fine resolution digitally controlled oscillator (DCO) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. The die area of the ADPLL is 0.8 mm² using 0.13 µm CMOS technology. The frequency resolution of the TDC is 1 ps. The DCO tuning range is 58% at 2.4 GHz and the effective DCO frequency resolution is 0.14 kHz. The phase noise of the ADPLL output at 2.4 GHz is ‐120.5 dBc/Hz with a 1 MHz offset. The total power consumption of the ADPLL is 12 mW from a 1.2 V supply voltage.     

High‐Gain Double‐Bulk Mixer in 65 nm CMOS with 830 pW Power Consumption

A low‐power down‐sampling mixer in a low‐power digital 65 nm CMOS technology is presented. The mixer consumes only 830 µW at 1.2 V supply voltage by combining an NMOS and a PMOS mixer with cascade transistors at the output. The measured gain is (19 °1 dB) at frequencies between 100 MHz and 3 GHz. An IIP3 of ?5.9 dBm is achieved.     

用90nm CMOS数字工艺实现的低抖动时钟锁相环设计

用90nmCMOS数字工艺设计实现了一个低抖动的时钟锁相环.锁相环不需要"模拟"的电阻和电容,采用金属间的寄生电容作为环路滤波器的电容.测试结果显示,锁相环锁定在1.989GHz时的均方抖动为3.7977ps,周期峰峰值抖动为31.225ps,核心功耗约为9mW.锁相环可稳定输出的频率范围为125MHz到2.7GHz.     

用90nm CMOS数字工艺实现的低抖动时钟锁相环设计

用90nmCMOS数字工艺设计实现了一个低抖动的时钟锁相环.锁相环不需要"模拟"的电阻和电容,采用金属间的寄生电容作为环路滤波器的电容.测试结果显示,锁相环锁定在1.989GHz时的均方抖动为3.7977ps,周期峰峰值抖动为31.225ps,核心功耗约为9mW.锁相环可稳定输出的频率范围为125MHz到2.7GHz.     

A 3.1 to 5 GHz CMOS Transceiver for DS‐UWB Systems

This paper presents a direct‐conversion CMOS transceiver for fully digital DS‐UWB systems. The transceiver includes all of the radio building blocks, such as a T/R switch, a low noise amplifier, an I/Q demodulator, a low pass filter, a variable gain amplifier as a receiver, the same receiver blocks as a transmitter including a phase‐locked loop (PLL), and a voltage controlled oscillator (VCO). A single‐ended‐to‐differential converter is implemented in the down‐conversion mixer and a differential‐to‐single‐ended converter is implemented in the driver amplifier stage. The chip is fabricated on a 9.0 mm² die using standard 0.18 µm CMOS technology and a 64‐pin MicroLead Frame package. Experimental results show the total current consumption is 143 mA including the PLL and VCO. The chip has a 3.5 dB receiver gain flatness at the 660 MHz bandwidth. These results indicate that the architecture and circuits are adaptable to the implementation of a wideband, low‐power, and high‐speed wireless personal area network.     

A Low‐Spur CMOS PLL Using Differential Compensation Scheme

This paper proposes LC voltage‐controlled oscillator (VCO) phase‐locked loop (PLL) and ring‐VCO PLL topologies with low‐phase noise. Differential control loops are used for the PLL locking through a symmetrical transformer‐resonator or bilaterally controlled varactor pair. A differential compensation mechanism suppresses out‐band spurious tones. The prototypes of the proposed PLL are implemented in a CMOS 65‐nm or 45‐nm process. The measured results of the LC‐VCO PLL show operation frequencies of 3.5 GHz to 5.6 GHz, a phase noise of –118 dBc/Hz at a 1 MHz offset, and a spur rejection of 66 dBc, while dissipating 3.2 mA at a 1 V supply. The ring‐VCO PLL shows a phase noise of –95 dBc/Hz at a 1 MHz offset, operation frequencies of 1.2 GHz to 2.04 GHz, and a spur rejection of 59 dBc, while dissipating 5.4 mA at a 1.1 V supply.     

A 0.4 ps-RMS-Jitter 1–3 GHz Ring-Oscillator PLL Using Phase-Noise Preamplification

This paper presents the design and experimental results of a 0.4 ps rms jitter (integrated from 3 kHz to 300 MHz offset at 2.5 GHz) 1–3 GHz tunable ring-oscillator PLL for integrated clock multiplier applications. A new loop filter structure based on a sample-reset phase-to-voltage converter and a Gm-C filter decouples reference spur performance from charge-pump current matching and loop filter leakage, while enables phase error preamplification to lower PLL in-band noise without reducing VCO analog tuning range or increasing loop filter capacitor size. The ring-oscillator VCO features programmability of phase noise and power consumption at a given frequency. The PLL is implemented in a digital 0.13 $mu{hbox{m}}$ CMOS process using only 1.2 V devices, occupies 0.07 ${hbox{mm}}^{2}$ and consumes 23 mW excluding reference clock receiver for 2.5 GHz output at the lowest phase noise mode.      

一种基于自偏置技术的低抖动锁相环

设计了一种环路带宽与输入频率的比值固定的自偏置锁相环。对VCO延迟单元进行改进,降低了抖动。采用SMIC 65 nm CMOS工艺,在1.2 V的工作电压下对锁相环进行仿真,输出频率范围为0.5~3.125 GHz。仿真结果表明,在输出频率1.875 GHz处的峰峰值抖动为8.7 ps,电路的核心功耗为45 mW,相位噪声为-79.7 dBc/Hz。     

A modified closed-loop auto frequency calibration technique for a 1.571-GHz integer-N PLL

In this paper, a modified closed-loop auto frequency calibration technique (MCL-AFC) is adopted in an integer-N phase-locked loop (PLL) for GPS-L1 application. The ignorance of circuit initial conditions setting in the closed-loop AFC may cause the start-up trap and long frequency calibration time. To solve these problems, the MCL-AFC technique is introduced. The process of MCL-AFC is listed below: first, initialisation process is only used for start-up of PLL; second, closed-loop voltage comparison process and open-loop switching process will take place alternately until optimum frequency control words are obtained. Tuning voltage searching range is reduced by half during the voltage comparison process since VCO’s tuning voltage is set to half of supply voltage through switching process. The MCL-AFC circuit is implemented in a 1-poly 6-metal 180 nm CMOS process and its chip area is 0.0167 mm². The measured locked output frequency of the PLL is 1.571 GHz and the out-band phase noise is ?131.9dBc/Hz at 1 MHz. The calibration time of PLL with MCL-AFC circuit is reduced to only 5µs while whole locking time is about 10.2µs.     

一种应用于图像传感器的全数字锁相环设计

针对图像传感器中传统锁相环(PLL)存在的功耗高、抖动大,以及锁定时长等问题,提出了一种基于计数器架构的低功耗、低噪声、低抖动、快速锁定的分数分频全数字锁相环(ADPLL)设计方法。首先,采用动态调节锁定控制算法来降低回路噪声,缩短锁定时间。其次,设计了一个通用单元来实现数字时间转换器(DTC)和时间数字转换器(TDC)的集成,以降低该部分由于增益不匹配引起的抖动。基于180nm CMOS工艺的仿真结果表明,在1.8V电源电压下,该ADPLL能够实现250MHz~2.8GHz范围的频率输出,锁定时间为1.028μs,当偏移载波频率为1MHz时,相位噪声为-102.249dBc/Hz,均方根抖动为1.7ps。     

A New Transmission Gate Cascode Current Mirror Charge Pump for Fast Locking Low Noise PLL

Charge Pump in a phase locked loop (PLL) generates non-ideal effects such as current mismatches at the output node and switching errors at the pull up and pull down networks. This work presents a novel transmission gate cascode current mirror charge pump circuit. The switches incorporated in this work are Transmission Gates which help to reduce various switching errors, and only one supply independent reference current source is used to have a minimum current mismatch. The performance analysis carried out in the Cadence design environment, and it is observed that the loop locks in 25 ns which is 50 % faster than the conventional charge pump. The control voltage absolutely has no ripple in it after locking which reduces the reference spur further. It could be achieved because the current mismatch is only about 7 %. This PLL operates at 2.5 GHz having a wide lock range of 0.5–2.8 GHz where average power consumption is 1.74 mW. Due to the use of cascade current mirror circuits, the output voltage swing that can be obtained is 1.79 V.     

A low phase noise PLL using Vackar VCO and a wide-locking range tunable divider for V-band signal generation in 65-nm CMOS

This paper presents a low phase noise integer-N phase-locked loop (PLL) for V-band signal generation. To enhance the frequency stability, we use a new class of Vackar voltage-controlled oscillator (VCO) in the PLL. The Vackar VCO achieves a low phase noise performance by effectively suppressing the AM-PM conversion. To properly align the locking range with the output of the VCO, a divider with wide locking range is realized by the current-mode logic (CML) D-flip-flops with tunable load. For spur reduction, an enhanced charge-pump structure is used to reject transient current glitches. With good static and dynamic current matching achieved in the charge pump, the reference spur is suppressed down to ?50 dBc. The designed PLL is implemented in a 65 nm RFCMOS process, and the measurement demonstrates a low phase noise signal up to 17 GHz. The in-band phase noise (at 1 MHz offset) and out-band phase noise (at 50 MHz offset) are ?103.6 and ?126.8 dBc/Hz, respectively. The PLL consumes 50.7 mW and occupies a chip area of 0.9 mm².     

一种高性能小数级联型锁相环电路

提出了一种低抖动、高频率分辨率、快速锁定的小数级联型锁相环。采用倍乘型延迟锁定环和基于和差调制器(DSM)的相位选择器实现小数倍频,并通过级联一个高带宽的整数型锁相环抬升频率且实现对DSM量化噪声的进一步滤除。基于TSMC 65 nm CMOS工艺,面积为0.27 mm^(2),输出频率为1.064~1.936 GHz。通过电路仿真输入100 MHz参考频率,PLL的1.872 GHz输出频率在300 ns以内完成锁定,1.2 V电源电压下整体功耗为8.6 mW。此时频率分辨率约1 kHz,1 kHz~100 MHz的积分范围内均方根抖动为1.32 ps。     

一种低抖动电荷泵锁相环频率合成器

设计一种低抖动电荷泵锁相环频率合成器,输出频率为400 MHz~1 GHz。电路采用电流型电荷泵自举结构消除电荷共享效应,同时实现可编程多种输出电流值。通过具体的频率范围来选择使用的VCO,获得更小的锁相环相位抖动。电路采用0.13μm 1.2 V CMOS工艺,芯片面积为0.6 mm×0.5 mm。Hsim后仿真结果显示当输出频率为1 GHz时,锁相环频率合成器的锁定时间为4.5μs,功耗为19.6 mW,最大周对周抖动为11 ps。     

A 1.2 V 12 b 60 MS/s CMOS Analog Front‐End for Image Signal Processing Applications

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front‐end (AFE) employing low‐power and flexible design techniques for image signal processing. An op‐amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog‐to‐digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 µm CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal‐to‐noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 mm² and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.     

带有自适应频率校准单元的26~41 GHz锁相环

采用45 nm SOI CMOS工艺,设计了一种带有自适应频率校准单元的26~41 GHz 锁相环。该锁相环包括输入缓冲器、鉴频鉴相器、电荷泵、环路滤波器、压控振荡器、高速时钟选通器、分频器和频率数字校准单元。采用了基于双LC-VCO的整数分频锁相环,使用了自适应频率选择的数字校准算法,使得锁相环能在不同参考时钟下自适应地调整工作频率范围。仿真结果表明,该锁相环的输出频率能够连续覆盖26~41 GHz。输出频率为26 GHz时,相位噪声为-103 dBc/Hz@10 MHz,功耗为34.64 mW。输出频率为41 GHz时,相位噪声为-96 dBc/Hz@10 MHz,功耗为35.44 mW。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

A 77 GHz FMCW radar transmitter with reconfigurable power amplifier in 65 nm CMOS

A frequency modulated continuous-wave (FMCW) radar transmitter in 65 nm CMOS is presented. The transmitter consists of one FMCW signal generator, one reconfigurable power amplifier and bias circuits. FMCW chirp signal comes from a sigma-delta modulated fractional-N phase-locked loop (PLL) with an integrated digital triangle-wave generator to control the output division-ratio of the sigma-delta modulator. A four-way power combining power amplifier is employed to improve the output power with a reconfigurable output power to satisfy different detection distance requirements. The measured results show that the chirp bandwidth achieves 2 GHz, from 76 GHz to 78 GHz, and the power amplifier achieves 13.1 dBm output P1dB with 8.1% PAE. The power amplifier and FMCW signal generator consume 228 mW and 56 mW power, respectively, with a 1.0 V power supply. The core die area is only 2.6×0.88 mm².     

A 10 GHz Phase-Locked Loop With a Compact Low-Pass Filter in 0.18 $mu$ m CMOS

In this letter, a multi-gigahertz phase-locked loop (PLL) with a compact low-pass filter is presented. By using a novel dual-path control in the PLL architecture, the capacitance in the loop filter can be effectively reduced for high-level integration while maintaining the required loop bandwidth. Consequently, the noise resulted from off-chip components is therefore eliminated, leading to lower timing jitter at the PLL output waveforms. In addition, the timing jitter is further suppressed due to the use of decomposed phase and frequency detection. Based on the proposed techniques, a 10 GHz PLL is implemented in 0.18 mum CMOS for demonstration. Consuming a dc power of 113 mW from a 1.8 V supply, the fabricated circuit exhibits a locking range from 10.1 to 11 GHz. At an output frequency of 10.3 GHz, the measured peak-to-peak and rms jitter are 3.78 and 0.44 ps, respectively.     

A Class‐D Amplifier for a Digital Hearing Aid with 0.015% Total Harmonic Distortion Plus Noise

A class‐D audio amplifier for a digital hearing aid is described. The class‐D amplifier operates with a pulsecode modulated (PCM) digital input and consists of an interpolation filter, a digital sigma‐delta modulator (SDM), and an analog SDM, along with an H‐bridge power switch. The noise of the power switch is suppressed by feeding it back to the input of the analog SDM. The interpolation filter removes the unwanted image tones of the PCM input, improving the linearity and power efficiency. The class‐D amplifier is implemented in a 0.13‐μm CMOS process. The maximum output power delivered to the receiver (speaker) is 1.19 mW. The measured total harmonic distortion plus noise is 0.015%, and the dynamic range is 86.0 dB. The class‐D amplifier consumes 304 μW from a 1.2‐V power supply.