GEMNET: a generalized, shuffle-exchange-based, regular, scalable,modular, multihop, WDM lightwave network

GEMNET is a generalization of shuffle-exchange networks and it can represent a family of network structures (including ShuffleNet and de Bruijn graph) for an arbitrary number of nodes. GEMNET employs a regular interconnection graph with highly desirable properties such as small nodal degree, simple routing, small diameter, and growth capability (viz. scalability). GEMNET can serve as a logical (virtual), packet-switched, multihop topology which can be employed for constructing the next generation of lightwave networks using wavelength-division multiplexing (WDM). Various properties of GEMNET are studied     

Thermodynamics of copper matte converting: Part III. Steady-state volatilization of Au,Ag, Pb,Zn, Ni,Se, Te,Bi, Sb,and As from slag,matte, and metallic copper

A comprehensive compilation of various thermodynamic data required for a complete analysis of copper matte converting reactions is presented. The data comprise estimated free energies of formation for such gases as SeO, SeS, TeO, TeS, BiO, BiS, SbO, SbS, AsO, and AsS, as well as activity coefficients in dilute copper alloys and vapor pressures of various elements and compounds. The volatilization of minor elements in steady-state reactors comprising gas and several condensed phases is mathematically formulated, and a parameter which governs the volatilization in such reactors is defined and named volatilization constant. The vapor pressures of various volatile species are calculated thermodynamically for the Noranda Process reactor by assuming equilibrium conditions. The volatilization constants of various minor elements are expressed explicitly as functions of oxygen and sulfur activities. Formerly Associate Professor, Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT     

PBX技术.市态.营销.选购

本文介绍了ＰＢＸ交换机的技术及市场需求态势。并提出ＰＢＸ产品的营销要素及其用户在选购时应遵循的原则。     

Bits, symbols, bauds, and bandwidth

The use of clear, concise, and unambiguous language in telecommunications engineering is vital to communicate a desired meaning and understanding. Terminology should be based on rigorous engineering principles and traceable to well known and dependable sources. This article deals with four everyday terms commonly encountered in the popular semi-technical press as well as in serious engineering periodicals. The misuse of these and other terms can lead to low-balled cost proposals, court litigation, and patent infringement cases. Imagine how an engineering student can be confused when she/he typically encounters bandwidth measured in bits per second     

Novel planar, square-shaped, dielectric-waveguide, single-, and dual-mode filters

This paper presents a novel concept of a square-shaped dielectric-waveguide resonator, which can easily realize a dielectric-waveguide cross-coupled filter or a dielectric-waveguide dual-mode filter, using the conventional printed circuit board (PCB) process. This planar dielectric-waveguide resonator has a higher Q value than a microstrip resonator. The physical mechanisms of both single- and dual-mode filters are elucidated. Some new coupling structures are developed for undergoing the PCB process. Filter design procedures are detailed. Design curves for the coupling coefficients of internal- and external-coupling structures are determined by full-wave finite-element-method electromagnetic calculations. Measurement results are highly consistent with theory for all trial filters. This study offers an effective means of producing low-cost high-performance planar circuit filters.     

人工智能时代“微机原理与接口技术”教学探讨

本文简述了在人工智能时代，我们的“微机原理与接口技术”课程教学团队基于线下线上混合教学模式，开展微机原理与接口技术的关键知识单元讲解的同时，实时课程思政，讲好微机原理的新故事；如何培养学生自主探索式学习技能，在课程基本知识单元学习的基础上扩展延伸相关深度学习、GPU技术、Python语言、FPGA技术等人工智能方面的知识单元的探究与学习，使得课程学习与人工智能的前沿发展相结合，理论联系实际，吸引和培养学生对该课程学习的兴趣和整体知识面扩展，这对于我们培养具有自主创新的科学探索精神的高素质专业人才具有重要的现实意义。     

Dilemmas,uncertainty, risks,and board performance

This paper traces the origins of the words risk, uncertainty, governance and development and argues that a deeper understanding of each allows more effective decision taking in the boardroom. It argues that the role of the board of directors is to balance and rebalance continuously their irresolvable dilemma — ‘how do we drive our enterprise forward while keeping it under prudent control?’ It argues that it is the board’s role to focus on uncertainty, rather than risk, and this requires a different set of intellectual skills from board members to be able to cope with monitoring a range of diverse scenarios. This is crucial for a board to develop stronger ways of both leading their organisation and of ensuring the connectedness of the learning within and between the board and the operational unit’s risk taking. It advocates that to achieve this a board must develop new ways of learning — especially of thinking strategically and becoming more sensitised to the dynamics of their changing external environments. This will take them well beyond the comforts of their specialist managerial disciplines and into the true world of directing. The paper demonstrates the importance of continuous learning in reducing organisational uncertainty and risk. It uses the ‘Learning Board’ process and model as the central processor of both strategic and operational learning to create an annual rhythm for the board’s year.     

SiO2 gate insulator defects,spatial distributions,densities, types,and sizes

Standard IC processes, as well as those involving the use of ionizing radiation, such as x-ray lithography etc., result in the generation of bulk defects, and interface states in the gate insulator, or underlying substrate, respectively, of insulated gate field effect transistors. Bulk defects are believed to be present as positively and negatively charged electron and hole traps, respectively, as well as neutral hole and “large” and “small” neutral electron traps. This paper provides a perspective of the current state of knowledge about the spatial distributions of large bulk defects, their areal densities, sizes, possible interrelationships among them, and the special cases of defects created by ion implanted silicon and oxygen, where knock-on effects have been simulated. It appears that bulk defects may all have their origin in neutral hole traps, (so-called E′ centers) and that when the insulator thickness is decreased to about 6-7 nm, defects are either no longer present, or, more likely, are incapable of trapping charge at room temperature because trapped carriers can either tunnel to one of the interfaces, or be annihilated by a reverse process. It appears possible also that the precursor of the several types of defects only forms at a “grown” silicon-silicon oxide interface. In theory, this would make it possible to grow defect free insulators by a combination of deposition and oxidation processes.     

ICP-AES法测定铅锌混合矿中的铁、铜、砷、锌、镉、汞

采用ICP-AES同时测定铅锌混合矿中铁、铜、砷、锌、镉、汞六种元素的含量,优化了实验条件,各元素的检出限为0.0069-0.07ug/mL,相对标准偏差为0.3%-4.72%,样品加标回收率为85.5%-112.8%。测试结果表明,该法测定铅锌矿的简单、准确、快速。     

Uncertainty, Value, Communication, and Problematic Integration

This essay discusses problematic integration (PI) theory, a general perspective on the nature of the dynamic relationship between communication and tensions among expectations and desires and considers the relevance and potential value of PI theory to questions foundational to the field of communication research. The paper begins with a discussion of the main propositions of PI theory, then considers the relationship between the theory and emerging analyses of uncertainty, attending in particular to the meanings of uncertainty and the tensions among uncertainties, wants, and wishes.     

High-gain,high-bandwidth,rail-to-rail,constant-gm CMOS operational amplifier

This study presents a high-gain, high-bandwidth, constant-g_m , rail-to-rail operational amplifier (op-amp). The constant transconductance is improved with a source-to-bulk bias control of an input pair. A source degeneration scheme is also adapted to the output stage for receiving wide input range without degradation of the gain. Additionally, several compensation schemes are employed to enhance the stability. A test chip is fabricated in a 0.18?µm complementary metal-oxide semiconductor process. The active area of the op-amp is 181?×?173?µm² and it consumes a power of 2.41?mW at a supply voltage of 1.8?V. The op-amp achieves a dc gain of 94.3?dB and a bandwidth of 45?MHz when the output capacitive load is connected to an effective load of 42.5?pF. A class-AB output stage combining a slew rate (SR) boost circuit provides a sinking current of 6?mA and an SR of 17?V/µs.