Recent progress on cooled avalanche photodiodes for single photon detection

Abstract

Recent results on the properties of cooled avalanche photodiodes for single photon detection are presented. Results from Hamamatsu silicon photodiodes, originally developed as radiation-hard photodetectors for high energy physics experiments, are extremely encouraging. Gains of approximately 10,000 can be achieved with the APD operating in proportional mode. Together with a low noise amplifier they allow photon counting with extremely high efficiency and very low noise making cold APDs almost ideal single photon detectors. Operation of APDs in Geiger mode is also reported, together with measurements of detection efficiency and noise as function of operating voltage. Prospects and hopes for future work are briefly summarized.     

GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate

Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode.     

Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates

In recent past, for next‐generation device opportunities such as sub‐10 nm channel field‐effect transistors (FETs), tunneling FETs, and high‐end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS₂) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS₂ FETs by using self‐assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS₂ FETs in an enhancement mode with preservation of electrical parameters such as field‐effect mobility, subthreshold swing, and current on–off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature‐dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS₂ FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of ≈45% of 1/2 V_DD. More impressively, quantum dot light‐emitting diodes, driven by enhancement mode MoS₂ FETs, stably demonstrate 120 cd m^?2 at the gate‐to‐source voltage of 5 V, exhibiting promising opportunities for future display application.     

Deflection and stability of membrane structures under electrostatic and Casimir forces in microelectromechanical systems

Summary The deflection and stability of microfabricated rectangular membrane strips driven electrostatically are analyzed theoretically in this paper with the attractive Casimir force between the conducting surfaces under consideration. The analytical results of the deflection of the membrane strip under the combined electrostatic and Casimir forces show that the effect of the Casimir force on the deflection is dependent on the values of the initial gap between the membrane and the substrate w₀, the applied voltage V and the fourth power of span to thickness ratio L⁴/h. The Casimir effect on the membrane system is dominant for smaller gap w₀ and lower voltage V, yet it decreases with the gap width and the voltage increasing. When the value of w₀ and V is large enough, it is feasible to neglect the Casimir force. The Casimir effect on the deflection increases with the increasing L⁴/H as well. The static stability of the membrane structure can be determined by a dimensionless parameter K related to the geometrical parameters of the membrane structure. The critical value K_C, over which the system will become unstable and the membrane strip will collapse to the substrate, is solved through numerical calculations, and it is found that an electrostatically driven membrane structure can be designed to avoid the potential instability with a high aspect ratio (L/h).     

Induced Voltage Measurements on a YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7−<Emphasis Type="Italic">δ</Emphasis></Subscript> Superconducting Thin Film Due to a Pair of Rotating Magnets

In this study, the induced voltages due to the rotation of a pair of magnets on an YBCO superconducting thin film sample (SS) with and without bias current were measured. It was found that the induced root mean square voltage (V _rms) was a constant (V ₀) at temperatures higher than the critical temperature (T _c ) of the SS, as expected from Faraday’s law. At a temperature in the superconducting transition region, the induced V _rms is a sensitive function of both the motion of the magnet and the bias current applied to the SS. These results can be understood by considering the superposition of the two kinds of induced voltages. One is induced according to Faraday’s law, and the other one is induced by the vortex movements inside the SS which is caused by the bias current. At temperatures below the transition region, the induced V _rms had a value equal to V ₀ and remained unchanged as the temperature further decreased. An explanation based on the distribution of the magnetic flux inside the SS was given, and it was concluded that the superconductor-normal conductor loop acted like a normal-normal conductor loop to the moving magnetic fields in this low temperature region.     

Reduced Interface‐Mediated Recombination for High Open‐Circuit Voltages in CH3NH3PbI3 Solar Cells

Perovskite solar cells with all‐organic transport layers exhibit efficiencies rivaling their counterparts that employ inorganic transport layers, while avoiding high‐temperature processing. Herein, it is investigated how the choice of the fullerene derivative employed in the electron‐transporting layer of inverted perovskite cells affects the open‐circuit voltage (V_OC). It is shown that nonradiative recombination mediated by the electron‐transporting layer is the limiting factor for the V_OC in the cells. By inserting an ultrathin layer of an insulating polymer between the active CH₃NH₃PbI₃ perovskite and the fullerene, an external radiative efficiency of up to 0.3%, a V_OC as high as 1.16 V, and a power conversion efficiency of 19.4% are realized. The results show that the reduction of nonradiative recombination due to charge‐blocking at the perovskite/organic interface is more important than proper level alignment in the search for ideal selective contacts toward high V_OC and efficiency.     

Mn-doped Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript> nanocrystal with enhanced electrochemical properties based on aerosol synthesis method

Mn-doped Li₃V_2?x Mn _x (PO₄)₃ nanocrystals with enhanced electrochemical properties for lithium-ion batteries were synthesized by aerosol process successfully. The nanocrystals synthesized from aerosol-assisted spray process have an average particle size smaller than 500 nm, with some initial particle size of about 100 nm. The Mn-doped Li₃V₂(PO₄)₃ cathode materials show higher capacity and coulombic efficiency than pure Li₃V₂(PO₄)₃ materials. Especially, the Mn-doped Li₃V_1.94Mn_0.06(PO₄)₃ shows a capacity of 130 mAh/g in the voltage range of 3.0–4.4 V and a coulombic efficiency of 99.5 % at 1C. The results from XRD, SEM, HRTEM, and EIS suggested that lattice changes of Li₃V₂(PO₄)₃ due to Mn doping and the fine particles enabled by aerosol-assisted spray process can significantly reduce the charge-transfer resistance and improve the apparent Li⁺ diffusion coefficient of insertion/desertion in the electrodes, which were the critical reason of better electrochemical performance of Mn-doped Li₃V₂(PO₄)₃ cathode materials.     

Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe₂ is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe₂ make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe₂ nanoflake. The n‐doped channel of a single α‐MoTe₂ nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoO_x doping. The homogeneous 2D MoTe₂ CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM_H = 0.52 V_DD, NM_L = 0.40 V_DD), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe₂ CMOS circuits.     

The energy release rate of mode II fractures in layered snow samples

Before a dry snow slab avalanche is released, a shear failure along a weak layer or an interface has to take place. This shear failure disconnects the overlaying slab from the weak layer. A better understanding of this fracture mechanical process, which is a key process in slab avalanche release, is essential for more accurate snow slope stability models. The purpose of this work was to design and to test an experimental set-up for a mode II fracture test with layered snow samples and to find a method to evaluate the interfacial fracture toughness or alternatively the energy release rate in mode II. Beam-shaped specimens were cut out of the layered snow cover, so that they consisted of two homogeneous snow layers separated by a well defined interface. In the cold laboratory 27 specimens were tested using a simple cantilever beam test. The test method proved to be applicable in the laboratory, although the handling of layered samples was delicate. An energy release rate for snow in mode II was calculated numerically with a finite element (FE) model and analytically using an approach for a deeply cracked cantilever beam. An analytical bilayer approach was not suitable. The critical energy release rate G _c was found to be 0.04 ± 0.02 J m⁻². It was primarily a material property of the weak layer and did not depend on the elastic properties of the two adjacent snow layers. The mixed mode interfacial fracture toughness for a shear fracture along a weak layer estimated from the critical energy release rate was substantially lower than the mode I fracture toughness found for snow of similar density.     

Electrical switching in metal-insulator-metal structures based on hydrated vanadium pentoxide

The phenomenon of switching in sandwich structures based on a V₂O₅ gel was studied. The switching effect with an S-shaped I–V characteristic is explained by a metal-insulator transition taking place in a vanadium dioxide phase formed in the initial gel film in the course of electroforming. The switching parameters (including the threshold voltage) were studied as functions of the temperature and pressure. It is shown that these switching devices can be used as highly effective microtransducers.     

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Emerging layered semiconductors present multiple advantages for optoelectronic technologies including high carrier mobilities, strong light-matter interactions, and tunable optical absorption and emission. Here, metal-semiconductor-metal avalanche photodiodes (APDs) are fabricated from Bi₂O₂Se crystals, which consist of electrostatically bound [Bi₂O₂]²⁺ and [Se]²⁻ layers. The resulting APDs possess an intrinsic carrier multiplication factor up to 400 at 7 K with a responsivity gain exceeding 3,000 A/W and bandwidth of ~ 400 kHz at a visible wavelength of 515.6 nm, ultimately resulting in a gain bandwidth product exceeding 1 GHz. Due to exceptionally low dark currents, Bi₂O₂Se APDs also yield high detectivities up to 4.6 × 10¹⁴ Jones. A systematic analysis of the photocurrent temperature and bias dependence reveals that the carrier multiplication process in Bi₂O₂Se APDs is consistent with a reverse biased Schottky diode model with a barrier height of ~ 44 meV, in contrast to the charge trapping extrinsic gain mechanism that dominates most layered semiconductor phototransistors. In this manner, layered Bi₂O₂Se APDs provide a unique platform that can be exploited in a diverse range of high-performance photodetector applications.

     

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Thin insulating layers are used to modulate a depletion region at the source of a thin‐film transistor. Bottom contact, staggered‐electrode indium gallium zinc oxide transistors with a 3 nm Al₂O₃ layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source‐gated transistors (SGTs): low saturation voltage (V_{D_SAT} ≈ 3 V), change in V_{D_SAT} with a gate voltage of only 0.12 V V^?1, and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2–50 µm channels and 2× for 9‐45 µm source‐gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky‐contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact‐controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low‐power, robust design approaches as large‐scale fabrication techniques with sub‐nanometer control mature.     

Quantitative Polarization-Resolved Second-Harmonic-Generation Microscopy of Glycine Microneedles

Second-harmonic generation (SHG) is a nonlinear optical process that can provide disease diagnosis through characterization of biological building blocks such as amino acids, peptides, and proteins. The second-order nonlinear susceptibility tensor χ⁽²⁾ of a material characterizes its tendency to cause SHG. Here, a method for finding the χ⁽²⁾ elements from polarization-resolved SHG microscopy in transmission mode is presented. The quantitative framework and analytical approach that corrects for micrometer-scale morphology and birefringence enable the determination and comparison of the SHG susceptibility tensors of β- and γ-phase glycine microneedles. The maximum nonlinear susceptibility coefficients are d₃₃ = 15 pm V⁻¹ for the β and d₃₃ = 5.9 pm V⁻¹ for the γ phase. The results demonstrate glycine as a useful biocompatible nonlinear material. This combination of the analytical model and polarization-resolved SHG transmission microscopy is broadly applicable for quantitative SHG material characterization and diagnostic imaging.     

Amide‐Catalyzed Phase‐Selective Crystallization Reduces Defect Density in Wide‐Bandgap Perovskites

Wide‐bandgap (WBG) formamidinium–cesium (FA‐Cs) lead iodide–bromide mixed perovskites are promising materials for front cells well‐matched with crystalline silicon to form tandem solar cells. They offer avenues to augment the performance of widely deployed commercial solar cells. However, phase instability, high open‐circuit voltage (V_oc) deficit, and large hysteresis limit this otherwise promising technology. Here, by controlling the crystallization of FA‐Cs WBG perovskite with the aid of a formamide cosolvent, light‐induced phase segregation and hysteresis in perovskite solar cells are suppressed. The highly polar solvent additive formamide induces direct formation of the black perovskite phase, bypassing the yellow phases, thereby reducing the density of defects in films. As a result, the optimized WBG perovskite solar cells (PSCs) (E_g ≈ 1.75 eV) exhibit a high V_oc of 1.23 V, reduced hysteresis, and a power conversion efficiency (PCE) of 17.8%. A PCE of 15.2% on 1.1 cm² solar cells, the highest among the reported efficiencies for large‐area PSCs having this bandgap is also demonstrated. These perovskites show excellent phase stability and thermal stability, as well as long‐term air stability. They maintain ≈95% of their initial PCE after 1300 h of storage in dry air without encapsulation.     

Trap‐State Suppression and Improved Charge Transport in PbS Quantum Dot Solar Cells with Synergistic Mixed‐Ligand Treatments

The power conversion efficiency of colloidal PbS‐quantum‐dot (QD)‐based solar cells is significantly hampered by lower‐than‐expected open circuit voltage (V_OC). The V_OC deficit is considerably higher in QD‐based solar cells compared to other types of existing solar cells due to in‐gap trap‐induced bulk recombination of photogenerated carriers. Here, this study reports a ligand exchange procedure based on a mixture of zinc iodide and 3‐mercaptopropyonic acid to reduce the V_OC deficit without compromising the high current density. This layer‐by‐layer solid state ligand exchange treatment enhances the photovoltaic performance from 6.62 to 9.92% with a significant improvement in V_OC from 0.58 to 0.66 V. This study further employs optoelectronic characterization, X‐ray photoelectron spectroscopy, and photoluminescence spectroscopy to understand the origin of V_OC improvement. The mixed‐ligand treatment reduces the sub‐bandgap traps and significantly reduces bulk recombination in the devices.     

Nonlinear<Emphasis Type="Italic">I-V</Emphasis> characteristics study of doped SnO<Subscript>2</Subscript>

When tin oxide is doped with Sb₂O₃ and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO₂. Antimony oxide acts as a donor and increases the conductivity. The results are nearly the same when antimony oxide is replaced by tantalum oxide. The observed nonlinear coefficient, α = 30 and the breakdown voltage is 120 V/mm.     

A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect

2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS₂ photodetectors function under the photogating effect originated from the charge‐trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual‐gated (DG) MoS₂ phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top‐gate voltage (V_TG) and positive back‐gate voltage (V_BG) to the MoS₂ channel, the photogenerated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ≈10⁵ A W^?1 and detectivity (D*) of ≈10¹⁴ Jones are achieved in several devices with different thickness under P_in of 53 µW cm^?2 at V_TG = ?5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS₂ DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. The results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.     

Matching Charge Extraction Contact for Wide‐Bandgap Perovskite Solar Cells

Efficient wide‐bandgap (WBG) perovskite solar cells are needed to boost the efficiency of silicon solar cells to beyond Schottky–Queisser limit, but they suffer from a larger open circuit voltage (V_OC) deficit than narrower bandgap ones. Here, it is shown that one major limitation of V_OC in WBG perovskite solar cells comes from the nonmatched energy levels of charge transport layers. Indene‐C60 bisadduct (ICBA) with higher‐lying lowest‐unoccupied‐molecular‐orbital is needed for WBG perovskite solar cells, while its energy‐disorder needs to be minimized before a larger V_OC can be observed. A simple method is applied to reduce the energy disorder by isolating isomer ICBA‐tran3 from the as‐synthesized ICBA‐mixture. WBG perovskite solar cells with ICBA‐tran3 show enhanced V_OC by 60 mV, reduced V_OC deficit of 0.5 V, and then a record stabilized power conversion efficiency of 18.5%. This work points out the importance of matching the charge transport layers in perovskite solar cells when the perovskites have a different composition and energy levels.     

The influence of gas composition,cathode material and geometrical parameters on the operation of a thin multiwire chamber working at high amplification

Data on the influence of gas filling, cathode material, geometrical parameters, the high voltage supplied and the primary ionization upon the operation of a thin (about 3 mm) chamber working in high current modes are presented. The higher hydrocarbons were found to be equivalent with n-pantene. Mixtures of CO₂ + (higher hydrocarbons) are supposed to work in a mode different from both Geiger and self-quenching streamer mode.     

Precise Control of Crystallization and Phase-Transition with Green Anti-Solvent in Wide-Bandgap Perovskite Solar Cells with Open-Circuit Voltage Exceeding 1.25 V

Wide-bandgap perovskite solar cells (PSCs) have attracted a lot of attention due to their application in tandem solar cells. However, the open-circuit voltage (V_OC) of wide-bandgap PSCs is dramatically limited by high defect density existing at the interface and bulk of the perovskite film. Here, an anti-solvent optimized adduct to control perovskite crystallization strategy that reduces nonradiative recombination and minimizes V_OC deficit is proposed. Specifically, an organic solvent with similar dipole moment, isopropanol (IPA) is added into ethyl acetate (EA) anti-solvent, which is beneficial to form PbI₂ adducts with better crystalline orientation and direct formation of α-phase perovskite. As a result, EA-IPA (7-1) based 1.67 eV PSCs deliver a power conversion efficiency of 20.06% and a V_OC of 1.255 V, which is one of the remarkable values for wide-bandgap around 1.67 eV. The findings provide an effective strategy for controlling crystallization to reduce defect density in PSCs.