Electron spin resonance in Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te and Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te compounds

Electron spin resonance in semimagnetic Cd_1?xMn_xTe (0<x<0.7) and Zn_1?xMn_xTe (0<x<0.53) compounds was studied at temperatures of 77 and 300 K. It is found that two types of paramagnetic centers exist in Zn_1?xMn_xTe, one of which is related to Mn²⁺ ions and the other is attributed to structural defects in the crystals.     

Synthesis and Transport Properties of In<Subscript>4</Subscript>(Se<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>3</Subscript>

Polycrystalline samples of In₄(Se_1−x Te _x )₃ were synthesized by using a melting–quenching–annealing process. The thermoelectric performance of the samples was evaluated by measuring the transport properties from 290 K to 650 K after sintering using the spark plasma sintering (SPS) technique. The results indicate that Te substitution can effectively reduce the thermal conductivity while maintaining good electrical transport properties. In₄Te₃ shows the lowest thermal conductivity of all compositions tested.     

On the band gap of Cu<Subscript>2</Subscript>ZnSn(S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>1–<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>4</Subscript> alloys

The transmittance spectra of single-crystal Cu₂ZnSnS₄ and Cu₂ZnSnSe₄ compounds and Cu₂ZnSn(S _x Se_1–x )₄ alloys grown by chemical vapor-transport reactions are studied in the region of the fundamental absorption edge. From the experimental spectra, the band gap of the compounds and their alloys is determined. The dependences of the band gap on the composition parameter x of the alloy are constructed. It is established that the band gap nonlinearly varies with x and can be described as a quadratic dependence.     

(IV<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>(III-V)<Subscript>x</Subscript> solid solutions obtained from a bounded tin melt-solution

The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si₂)_1?x(GaAs)_x (0≤x≤0.96) and (Si₂)_1?x(GaP)_x (0≤x≤1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si₂)_1?x(GaAs)_x and (Si₂)_1?x(GaP)_x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si₂)_1?x(GaAs)_x and Si-(Si₂)_1?x(GaP)_x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV₂)_1?x(III-V)_x solid solutions are structurally perfect.     

Optical and thermal properties of CuAl<Subscript>x</Subscript>In<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>2</Subscript> solid solutions

The optical and thermal properties of crystals of CuAl_xIn_1?xTe₂ solid solutions grown by the Bridgman-Stockbarger method were studied for the first time. From the transmission and reflection spectra in the region of the intrinsic-absorption edge, the band gap (E _g ) was determined for the CuInTe₂ and CuAlTe₂ compounds and for their solid solutions; the concentration dependence of E _g was plotted. The E _g value was found to vary nonlinearly with x and can be described by the quadratic dependence. Dilatometry was used to study the thermal expansion of these solid solutions. The coefficient of thermal expansion (α_L) was shown to have a λ-shaped temperature dependence in the region of phase transitions. The isotherms are plotted for the concentration dependence of α_L. The thermal conductivity was investigated and its concentration dependence was plotted. The dependence of the thermal conductivity on x was established to have a minimum in the region of medium compositions.     

Optical properties of AgGa<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>2</Subscript> alloys

Coarse-grained crystals of AgGaSe₂ and AgInSe₂ ternary compounds and their alloys are grown by planar crystallization of the melts. For the crystals produced in this way, the transmittance spectra near the fundamental absorption edge are studied. From the experimental spectra, the band gap (E _g) and its variation with composition are determined. It is established that E _g is a nonlinear function of the composition parameter x. The dependence E _g (x) is calculated theoretically in the context of the Van Vechten-Bergstresser model and Hill-Richardson pseudopotential model.     

Specific features of conductivity of Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>x</Subscript>Te and Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>x</Subscript>Te single crystals

The electrical characteristics of p-type Cd_1?xZn_xTe (x=0.05) and Cd_1?xMn_xTe (x=0.04) single crystals with a resistivity of 10³–10¹⁰ Ω cm at 300 K are studied. The conductivity and its variation with temperature are interpreted on the basis of statistics of electrons and holes in a semiconductor with deep acceptor impurities (defects), with regard to their compensation by donors. The depth of acceptor levels and the degree of their compensation are determined. The problems of attaining near intrinsic conductivity close to intrinsic are discussed.     

Photoelectric properties of surface-barrier structures based on Zn<Subscript>2−2<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>x</Subscript>In<Subscript>x</Subscript>Se<Subscript>2</Subscript> films obtained by selenization

p-Zn_2?2xCu_xIn_xSe₂ (ZCIS) polycrystalline films 1–2 ¼m thick have been obtained by selenization. Photosensitive surface-barrier In/p-ZCIS structures are fabricated based on the films. The spectra of relative quantum efficiency of the structures obtained by selenization of the initial ZnSe/(Cu-In) and (Zn-Cu-In) films are examined. The optical band gap of the Zn_2?2xCu_xIn_xSe₂ films is determined. Conclusions are reached on the prospects for the use of the obtained films as broadband photoconverters of natural optical radiation.     

Optical reflection in (Pb<Subscript>0.78</Subscript>Sn<Subscript>0.22</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>x</Subscript>Te solid solutions with a high indium content

Optical reflectance spectra of (Pb_0.78Sn_0.22)_1?xIn_xTe with a high indium content have been studied at T=300 K. Spectral features related to composition heterogeneity in the solid solutions were revealed. An assumption has been made that these heterogeneities are manifested as systems of ordered “threads.” Direct evidence of the existence of heterogeneities in (Pb_0.78Sn_0.22)_1?xIn_xTe has been obtained by studying the surface morphology using optical and scanning electron microscopy.     

High-Temperature Transport Properties of Yb<Subscript>4−<Emphasis Type="Italic">x</Emphasis></Subscript>Sm<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sb<Subscript>3</Subscript>

Polycrystalline L₄Sb₃ (L = La, Ce, Sm, and Yb) and Yb_4−x Sm _x Sb₃, which crystallizes in the anti-Th₃P₄ structure type (I-43d no. 220), were synthesized via high-temperature reaction. Structural and chemical characterization were performed by x-ray diffraction and electronic microscopy with energy-dispersive x-ray analysis. Pucks were densified by spark plasma sintering. Transport property measurements showed that these compounds are n-type with low Seebeck coefficients, except for Yb₄Sb₃, which shows semimetallic behavior with hole conduction above 523 K. By partially substituting Yb by a trivalent rare earth we successfully improved the thermoelectric figure of merit of Yb₄Sb₃ up to 0.7 at 1273 K.     

The Power Factor of Bi<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Tl<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>3</Subscript> Single Crystals

Single crystals of the ternary system Bi_2−x Tl _x Se₃ (nominally x = 0.0 to 0.1) were prepared using the Bridgman technique. Samples with varying content of Tl were characterized by measurement of lattice parameters, electrical conductivity σ _⊥c, Hall coefficient R _H(B║c), and Seebeck coefficient S(ΔT⊥c). The measurements indicate that incorporation of Tl into Bi₂Se₃ lowers the concentration of free electrons and enhances their mobility. This effect is explained within the framework of the point defects in the crystal lattice, with formation of substitutional defects of thallium in place of bismuth (Tl_Bi) and a decrease in the concentration of selenium vacancies (V_Se ^{+ 2} V_{\rm{Se}}^{ + 2} ). The temperature dependence of the power factor σS ² of the samples is also discussed. As a consequence of the thallium doping we observe a significant increase of the power factor compared with the parent Bi₂Se₃.     

Tunable Coplanar Waveguide Phase Shifter Using Ba<Subscript>x</Subscript>Sr<Subscript>1−x</Subscript>TiO<Subscript>3</Subscript> Thin Films on LaAlO<Subscript>3</Subscript> Substrates

A kind of distributed coplanar waveguide (CPW) phase shifter based on LaAlO₃ substrates is designed and fabricated in this paper. The Ba_0.4Sr_0.6TiO₃ (BST) thin films employed in the circuits are deposited by RF magnetron sputtering, and then annealed at 800°C for 30 min in air. The dielectric tunability, loss tangent of the BST films are respectively 43.7% and 0.017 at 100 kHz and 30 V, the leakage current is approximately 1 × 10⁻⁹A/cm² at zero bias voltage. The CPW phase-shifter designed is subsequently fabricated in order to obtain a 360° phase shift at 30 GHz with a moderate bias voltage. The maximal phase shift is 372° at 22.5 GHz with a bias voltage of 40 V.     

Optical properties of (CuInSe<Subscript>2</Subscript>)<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>(2MnSe)<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

The transmittance spectra of (CuInSe₂)_{1 − x} (2MnSe) _x alloy crystals grown by the Bridgman method are studied in the temperature range from 10 to 300 K. For these materials, the band gap and its temperature dependence are determined. It is shown that the band gap decreases with increasing temperature. The dependences of the band gap of the (CuInSe₂)_{1 − x} (2MnSe) _x alloys on the composition parameter x are plotted.     

Magnetic Properties of Fe<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>2</Subscript>S<Subscript>4</Subscript> Alloy Single Crystals

This study concerns the magnetic properties of single crystals of Fe _x Mn_{1 − x} In₂S₄ alloys. The basically antiferromagnetic character of indirect exchange interactions between Fe²⁺ and Mn²⁺ cations is established. As the concentration of Fe²⁺ cations is increased, the magnetic ordering temperature increases from ∼12 K (x = 0) to ∼22 K (x = 1). Short-range-order ferromagnetic correlations are observed. The basic magnetic phase state of the alloys is the spin glass state, with the freezing temperature increasing from ∼5 K (x = 0) to ∼12 K (x = 1). As the external magnetic field is increased, the magnetic ordering temperature slightly decreases. The most probable causes and mechanisms of formation of the magnetic state of the alloys are discussed.     

Preparation and Thermoelectric Properties of Ag<Subscript>0.5</Subscript>In<Subscript>0.5−<Emphasis Type="Italic">x</Emphasis></Subscript>Pb<Subscript>5</Subscript>Sn<Subscript>4</Subscript>Te<Subscript>10</Subscript>

A series of compounds with composition Ag_0.5In_0.5−x Pb₅Sn₄Te₁₀ (x = 0.05 to 0.20) were prepared by slowly cooling the melts of the corresponding elements, and the effect of In content on the thermoelectric transport properties of these compounds has been investigated. Results indicate that the compounds’ electronic structure is sensitive to In content, and that the carrier concentration of these compounds at room temperature increases from 4.86 × 10¹⁸ cm⁻³ to 3.85 × 10²¹ cm⁻³ as x increases from 0.05 to 0.20. For these compounds, electrical conductivity decreases and Seebeck coefficient increases with increasing In content. Ag_0.05In_0.03Pb_0.5Sn_0.4Te₁₀ shows very low lattice thermal conductivity, and has a maximum dimensionless figure of merit ZT of 1.2 at 800 K.     

A ferroelectric field effect transistor based on a Pb(Zr<Subscript>x</Subscript>Ti<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)O<Subscript>3</Subscript>/SnO<Subscript>2</Subscript> heterostructure

The possibility of fabricating a ferroelectric FET based on a Pb(Zr_xTi_1?x)O₃/SnO₂ (PZT/SnO₂) heterostructure is investigated. Sb-doped epitaxial SnO₂/Al₂O₃ thin film deposited by YAG laser ablation from a metal target is used as the FET channel. The highest obtained electron mobility in the channel is 25 cm²/(V s) at an electron density of 8 × 10¹⁹ cm^?3. The possibility of growing PZT film directly on SnO₂ film using two different techniques, laser ablation and magnetron sputtering, is demonstrated. Both methods have been used in the fabrication of Au/PZT/SnO₂ capacitor heterostructures, whose top Au electrode is 250×250 μm² in size. These cells demonstrate a capacitance of 1000 pF at a 10-V bias and remnant polarization up to 16 μC/cm². A Au/PZT/SnO₂/Al₂O₃ transistor structure with 94% modulation of the channel current is fabricated. The difference in the channel current under the effect of positive and negative remnant polarization of the undergate ferroelectric is 37%.     

Galvanomagnetic effects in atomic-disordered HgSe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>x</Subscript> compounds

In HgSe and HgSe_1?xS_x single crystals irradiated with electrons of 5 MeV energy at 270 K, resistivity and the Hall effect have been studied in the temperature range 1.7–370 K in magnetic field up to 13.6 T. Changes in the carrier density and mobility upon generation of radiation-induced defects and subsequent isochronous annealings have been determined. The irradiation made it possible to reduce the electron density to a greater extent than do conventional methods, as well as to restore the initial value by annealing.     

Analysis of the magnetic properties of (La<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>0.93</Subscript>MnO<Subscript>3</Subscript> manganites at high temperatures

For the first time, the Faraday method is used to measure the temperature dependence of paramagnetic susceptibility χ(T) of (La_{1 ? x} Sr _x )_0.93MnO₃ (x = 0.2, 0.25, or 0.3) manganites in the temperature interval 60–850°C. It is demonstrated that the dependences have two kinks and three linear sections. The kink of curve χ^?1(T) is related to polymorphic transformations (Q′ → Q* and Q* → R) that take place in the crystal lattices of the samples. The main magnetic characteristics of the samples are determined with the least-squares processing of curve χ^?1. Is is demonstrated that dependence χ^?1(T) obeys the Curie-Weiss law. The energy state of the magnetoactive manganese atom in the Q′-and Q*-phase samples is close to the energy state of a free Mn²⁺ ion. In the R phase, this state is close to the state of a free Mn³⁺ ion.     

Phonon spectra of (GaAs)<Subscript>n</Subscript>(Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript>x</Subscript>As)<Subscript>m</Subscript> superlattices according to the Keating model

Phonon spectra of (GaAs)_n(Ga_1?xAl_xAs)_m superlattices were calculated using the Keating model with allowance made for long-range forces. The calculated summed longitudinal acoustical branches are consistent with observed experimental Raman doublets. The tendency towards a shift to higher frequencies of longitudinal optical modes as the number of GaAs monolayers increases, which is observed both in calculations and in experiments, is caused by localization of these modes within the GaAs layer.