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多量子阱垂直腔面发射半导体激光器的速率方程分析 总被引:8,自引:0,他引:8
依据多量子阱垂直腔面发射半导体激光器(VCSELS)的结构特点,并考虑到腔量子电动力学中自发辐射增强效应,建立了多量子阱VCSELS的速率方程,并给出了其方程的严格解析解,在此基础之上,讨论了VCSELS的稳态特性,并与普通开腔和三维封闭腔中的结果进行了比较,给出了V 相似文献
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量子阱激光器以其优良的性能,成为光通信领域的一种重要光源.在量子阱激光器模型中引入中间过渡态,能更完整地描述阱中载流子的输运过程.对基于三层速率方程的单量子阱激光器电路模型进行模拟分析,探讨了过渡态在载流子输运过程中的作用.其模型仿真的结果对器件设计及不同模型的选用具有十分重要的参考价值. 相似文献
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根据光增益与载流子密度的对数关系,在受激发射速率中分别引入了增益饱和项和载流子复合项,通过适应于多量子阱激光器的速率方程,从理论上证明了短腔结构存在与阈值电流最小值对应的最佳阱数。给出了多量子阱激光器的瞬态呼应特性的直接仿真结果及相图,分析了注入电流、阱数和腔长对其激射阈值、开关延误时间、弛豫振荡频率和光输出等能量的影响。 相似文献
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量子点激光器研究进展综述 总被引:4,自引:1,他引:3
本文综述了量子点激光器的研究进展。介绍了量子点激光器的结构原理、生长及其优化;对量子点激光器光电特性从实验和建立模型进行描述;给出以速率方程描述的量子点激光器的动态特性如光增益均匀展宽、激射光谱控制、激发态迁移等;最后展望了量子点激光器的研究方向。 相似文献
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单量子阱激光器的Langivin噪声分析 总被引:1,自引:1,他引:0
本文通过在速率方程中加入Langivin噪声项和相位方程,以定量分析量子阱激光器(QW-LD)噪声特性,这样,能系统地表征量子噪声(尤其是影响线宽等参数的相位噪声)特性,我们对单量子阱激光器的噪声特性进行了模拟分析,并得到了有用的结果,如相位噪声谱和激射特性,我们发现在感兴趣的频域内有较大的噪声,并且噪声强度依赖于偏置电流的大小 。 相似文献
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Gao D.S. Kang S.M. Bryan R.P. Coleman J.J. 《Quantum Electronics, IEEE Journal of》1990,26(7):1206-1216
A two-port circuit model for quantum-well (QW) lasers has been developed from rate equations. With emphasis on the physical principles, the phenomena of the recombination process of electron-hole pairs and the light wave resonance in the active region have been incorporated into this new model. The model has been implemented in a circuit simulator and validated with measured DC and transient laser characteristics. The frequency effects on the modulation properties of QW lasers have been studied and analyzed using a small-signal model. Simulation results show excellent agreement with experimental data 相似文献
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本文提出了一种基于小信号等效电路的半导体激光器非线性电路模型,该模型使激光顺的调制响应和非线性特性以及其它相关电子电路的非线性特性可统一地通过通用电路分析软件来分析和计算。运用此模型对一单模激光器的二阶谐波与三阶交调失真特性进行了分析,结果与已报道的理论和实验结果一致。 相似文献
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Weiyou Chen Shiyong Liu 《Quantum Electronics, IEEE Journal of》1996,32(12):2128-2132
Under the assumption that the emission spectra of a semiconductor laser diode (LD) as a function of wavelength is Gaussian, a simple circuit model for a multilongitudinal-mode (MLM) LD is developed based upon MLM rate equations. This model is very suitable for the computer-aided analysis of an optoelectronic integrated circuit (OEIC). Using this model, the dc and ac characteristics of a trenched buried heterostructure LD are studied. The simulated results agree with the reports. The dependence of threshold and emission spectra on the cavity length is simulated 相似文献
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半导体激光器大信号等效电路模型的参数提取 总被引:6,自引:0,他引:6
本文提出了一种由半导体激光器(LD)的外特性,如端口电特性和小信号频率响应,确定其大信号等效电路模型参数的新方法。并对一个InGaAsP脊形波导LD和一个隐埋异质结LD进行了参数提取。这种方法,不需要了解LD的内部特性,分析的结果与已报道的理论、实验值一致。 相似文献
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本文给出一个新的PIN光电二极管的等效电路模型,该模型基于速率方程和微波端口特性并在TMS(TsinghuaMicrowaveSpice)中完成,可以进行线性、非线性信号分析和噪声分析。利用该模型对其非线性谐波特性进行了预测,模拟结果表明和文献数值求解结果基本一致,最后讨论了适用于金属-半导体-金属(MSM)光电二极管的修正模型. 相似文献
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从传统的激光器速率方程出发,同时考虑芯片封装寄生参量和本征区接触参量的影响,得出一种双异质结半导体激光器的新型等效电路模型,在此模型基础上用电路仿真软件PSpice分析了直流偏置对激光器弛豫振荡、小信号频率响应、大信号脉冲响应的影响。 相似文献
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Haksoo Han Hyunsoo Chung Yung-Il Joe Seongsu Park Gwangchong Joo Nam Hwang Minkyu Song 《Journal of Electronic Materials》1998,27(8):985-989
Flip chip bonding technique using Pb/In solder bumps was applied to packaging of a 10 Gbps laser diode (LD) submodule for
high speed optical communication systems. The effect of the flip-chip bonding interconnection technique instead of conventional
wire bonding was investigated for high speed broad band devices. The broad band performance of 10 Gbps LD submodule was simulated
using SPICE S/W and compared with experimental results. In this simulation, the 10 Gbps LD was modeled in a parallel RC circuit.
The values of R and C used for the equivalent circuit were 5ω and 1 pF, respectively. The LD was placed in series with a 18ω
thin film resistor to prevent the impedance mismatch between the LD and a 25ω transmission line. The dependence of parasitic
parameters on the small signal modulation bandwidth and the scattering parameters of the LD submodule was investigated and
analyzed up to 20 GHz. A small signal modulation bandwidth of 14 GHz at 10 mA dc bias current and the clean modulation response
up to 20 GHz were found for the flip-chip bonded submodule. The bandwidth of flip-chip bonded 10 Gbps LD submodule is wider
than that of the wire-bonded LD submodule by a difference of 3.8 GHz. 相似文献
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A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton''s hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S-parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased. 相似文献
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注入锁定半导体激光器的电路模型及其调制特性分析 总被引:2,自引:1,他引:1
本文给出了注入锁定半导体激光器LD小信号电路模型,使得对注锁LD的调制特性可以用通用电路分析软件进行分析,运用此模型对注入锁定LD的调制特性进行了分析。模型的稳态分析结果与已报导的理论和实验一致。 相似文献