双层多晶硅FLOTOX EEPROM特性的模拟和验证

介绍了EEPROM的电学模型,模拟分析了阈值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系.根据模拟结果,采用0.6μm CMOS工艺,对双层多晶硅FLOTOX EEPROM进行了流片,PCM的测试结果验证了模拟结果在实际工艺中的可行性.模拟得出的工艺参数评价为制造高性能的存储单元打下了坚实的基础.     

微电子学、集成电路

TN4 2003060486双层多晶硅F LOTOX EEPROM特性的模拟和验证/黄飞鸿.郑国祥,吴瑞(复旦大学)“半导体学报一2003,24(6)一637-642介绍了EEPROM的电学模型,模拟分析了闷值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系.根据模拟绕果,采用0 .6户mC MOS工艺,对双层多晶硅FLOTOX EEPROM进行了流片,PCM的测试结果验证了模拟结果在实际工艺中的可行性二模拟得出的工艺参数评价为制造高性能的存储单元打~下了坚实的基础.图10参9(木)不同基板材料,不使芯片产生热失效所允许的抬入功率耗散密度.这为研究高密度电子封装器件…     

一种应用于可编程模拟电路的EEPROM单元

为改善传统EEPROM在可编程模拟电路应用中的不足,提出了一种新型的单层多晶EEPROM单元结构,与常见的单层多晶EEPROM结构相比,该结构采用双N阱、附加栅结构实现,与标准数字CMOS工艺兼容,具有写入电流控制准确、阈值电压低的特点.通过对器件的分析及仿真,验证了该结构在模拟电路应用中的有效性.     

采购集市

Microchip新型 EEPROM拥有10 MHz SPI总线 Microchip Technology推出了新型串行EEPROM ,旨在为设计人员提供运行速度快、写入时间短的低电流器件,使用户能更快、更有效地获得大量数据。 8千位25XX080A/B和16千位25XX160A/B是兼容SPI 总线的串行EEPROM器件,其最快时钟速度为10MHz,写入时间为 5毫秒,写入电流为3毫安。新器件具有自定时擦写周期,内置式写保护功能,高度可靠,可保存数据达200年之久及承受100万次擦写。 www.microchip.comADI新添电源时序控制IC美国模拟器件(ADI)公司最近新增加两种适合基础设施系统例如,路由…     

一种用于模拟电路修调的EEPROM电路

介绍了一种用在模拟电路中修调的EEPROM电路.该电路采用一种新型的单层多晶EEPROM结构,与传统的双栅EEPROM结构相比,该结构与数字CMOS工艺兼容,成本低、成品率高.使用在一个基准电压电路中时,其基准电压的调节范围达到±4.82%,调节精度达到4mV.EEPROM修调电路可广泛应用于各种高精度需求的电路中.     

微芯科技首推超薄DFN封装512K位I2C兼容串行EEPROM

微芯科技宣布推出业界首款 8焊盘双排平面无引脚 (DFN)封装的 5 12K位I2 C兼容串行EEPROM。新款 2 4LC5 12、2 4AA5 12和 2 4FC5 12器件采用微芯科技先进的PMOS电擦除单元 (PEEC)工艺 ,以最薄的一种封装 (0 .9mm )提供高密度和低功耗的EEPROM器件。DFN封装面积仅为 6mm× 5mm ,可帮助设计人员在低窄空间应用中采用 5 12K位串行EEPROM ,同时降低系统成本 ,提高板面积的使用率。新推出的三款器件均具有 12 8字节页写入及在整个阵列中随机读取的功能。功能强大的存取线可在同一总线上支持 8个器件 ,最大存取空间达 4兆位。新…     

一种用于温补晶振的EEPROM修调电路设计

设计了一种用于温度补偿晶体振荡器(TCXO)的数字修调电可擦除只读存储器(EEPROM)电路.该电路具有正常工作模式和RAM WRITE、EEPROM WRITE、EEPROM READ三种测试模式,用于TCXO中模拟补偿电压的修调.在SMIC 0.35μm工艺下,采用HSPICE工具对设计的电路进行了仿真与验证,结果表明该电路具有可靠性高和功耗低的优点.     

基于TCAD软件的单层多晶EEPROM器件模拟分析

利用TCAD软件对单层多晶EEPROM器件特性进行了模拟分析,介绍了单层多晶EEPROM存储单元结构与原理的基础,针对TCAD软件中模拟分析单层多晶EEPROM器件特性时存在的困难,提出了一种两个MOS管外加电阻的等效模型来替代单层多晶EEPROM存储单元结构进行等效模拟.通过编程模拟了单层多晶EEPROM器件性能,模拟分析得到的特性曲线与理论曲线能较好吻合,验证了等效模型方案的可行性.     

无源UHF RFID电子标签模拟前端设计

提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.     

无源UHF RFID电子标签模拟前端设计

提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.