Low temperature formation of Si1 − x − yGexSny-on-insulator structures by using solid-phase mixing of Ge1 − zSnz/Si-on-insulator substrates

We proposed the low temperature formation technique of strain-relaxed Si_{1 − x − y}Ge_xSn_y-on-insulator (SGTOI) structures. We found that the solid-phase reaction and the formation of single and uniform Si_{1 − x − y}Ge_xSn_y layer on an insulator after annealing SiO₂/Ge_1 − zSn_z/SOI structures even at a temperature as low as 400 °C. We characterized the crystalline structure of SGTOI, and investigated the effects of annealing, Sn incorporation, and a SiO₂ cap layer on the solid-phase reaction between Ge_1 − zSn_z and SOI layers. The solid-phase reaction is enhanced with a higher Sn content and a thicker SiO₂ cap layer, and then Si_{1 − x − y}Ge_xSn_y layers are more rapidly formed. The SGTOI layer exhibits very low mosaicity and have good crystallinity.     

Effect of bias voltage on microstructure, mechanical and wear properties of Al-Si-N coatings deposited by cathodic arc evaporation

Al-Si-N coatings were deposited on tungsten carbide (WC-Co) and silicon wafer substrates using Cr and AlSi (12 at.% Si) alloy targets using a dual cathode source with short straight-duct filter in the cathode arc evaporation system. Al-Si-N coatings were synthesized under a constant flow of nitrogen, using various substrate bias voltages at a fixed AlSi cathode power. To enhance adhesive strength, the Cr/(Cr_xAl_ySi_z)N graduated layer between the top coating and the substrate was deposited as a buffer interlayer. The effects of bias voltage on the microstructure, mechanical and wear properties of the Al-Si-N films were investigated. Experimental results reveal that the Al-Si-N coatings exhibited a nanocomposite structure of nano-crystalline h-AlN, amorphous Si₃N₄ and a small amount of free Si and oxides. It was also observed that the deposition rate of as-deposited films gradually decreased from about 25.1 to 18.8 nm/min when the substrate bias was changed from − 30 to − 150 V. The XRD results revealed that h-AlN preferred orientation changed from (002) to (100) as the bias voltage increased. The maximum hardness of approximately 35 GPa was obtained at the bias voltage of −90 V. Moreover, the grain size was inversely proportional to the hardness of the film. Wear test results reveal that the Al-Si-N film had a lower coefficient of friction, between 0.5 and 0.7, than that 0.7 of the AlN film.     

Double layer SiNx:H films for passivation and anti-reflection coating of c-Si solar cells

In this report, we present a cost effective simple innovative approach to fabricate double layer anti-reflection (DLAR) coatings using a single material which can provide high qualities of passivation and anti-reflection property. Two layers of SiN_x:H films with different refractive indices were deposited onto p-type c-Si wafer using plasma enhanced chemical vapor deposition reactor by controlling the NH₃ and SiH₄ gas ratio. Refractive indices of top and bottom layers were chosen as 1.9 and 2.3 respectively. The effect of passivation at the interface was investigated by effective carrier lifetime, hydrogen concentration and interface trapped density (D_it) measurements. The optical characteristic was analyzed by reflectance and transmittance measurements. A superior efficiency of 17.61% was obtained for solar cells fabricated with DLAR coating when compared to an efficiency of 17.24% for cells with SLAR coating. Further, J_sc and V_oc of solar cell with DLAR coating is increased by a value of ~ 1 mA/cm² and 4 mV respectively than cell with SLAR coating.     

A structural and corrosion study of triethoxysilyl and perfluorooctyl functionalized polyhedral silsesquioxane nanocomposite films on AA 2024 alloy

A tri-functional polyhedral oligomeric silsesquioxane (POSS) based silane precursor R_xR_yR_z(SiO_3/2)_n (x + y + z = n = 6, 8, 10, ….) bearing 3-(N-(3-triethoxysilylpropyl)ureido)propyl, isooctyl and perfluoropropyl groups was synthesized and investigated as corrosion protective coating for AA 2024 alloy. Infrared reflection-absorption (IR RA) combined with X-ray photoelectron spectroscopy and atomic force microscopy provided information about partial self-assembling of coatings having a fluorine enriched upper layer with a low surface energy (γ^tot = 12.37 mN/m). The structural changes that accompanied corrosion produced under chronocoulometrical conditions were assessed from ex-situ IR RA spectra. A new band at 1690-1700 cm^− 1 appeared above the corrosion potential, and was assigned to the formation of amidonium ions and consequent relaxation of urea-urea associations.     

Chemomechanical effects in optical coating systems

The major in-service failure mechanisms of modern optical coatings for architectural glass can be mechanical (e.g. scratch damage). Many of these coatings are multilayer structures of less than 100 nm thickness and different coating architectures are possible (i.e. different layer materials, thickness and stacking order). These coatings are exposed to different types of climatic conditions. In such circumstances it has been shown that chemomechanical effects can lead to changes in the hardness as well as the fracture resistance of bulk oxides. High performance glass is coated with anti-reflection coatings (e.g. ZnO, SnO₂) and barrier layers (e.g. TiO_xN_y) which are also expected to suffer from such chemomechanical effects. In this study we have demonstrated the chemomechanical behaviour of a range of optical coatings exposed to water. Water exposure tends to reduce the hardness and increase the fracture resistance of the coating making it more vulnerable to plastic deformation during scratching. The susceptibility of different coatings to chemomechanical effects is discussed.     

Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride coatings

Effects of substrate bias voltage and target sputtering power on the structural and tribological properties of carbon nitride (CN_x) coatings are investigated. CN_x coatings are fabricated by a hybrid coating process with the combination of radio frequency plasma enhanced chemical vapor deposition (RF PECVD) and DC magnetron sputtering at various substrate bias voltage and target sputtering power in the order of −400 V 200 W, −400 V 100 W, −800 V 200 W, and −800 V 100 W. The deposition rate, N/C atomic ratio, and hardness of CN_x coatings as well as friction coefficient of CN_x coating sliding against AISI 52100 pin in N₂ gas stream decrease, while the residual stress of CN_x coatings increases with the increase of substrate bias voltage and the decrease of target sputtering power. The highest hardness measured under single stiffness mode of 15.0 GPa and lowest residual stress of 3.7 GPa of CN_x coatings are obtained at −400 V 200 W, whereas the lowest friction coefficient of 0.12 of CN_x coatings is achieved at −800 V 100 W. Raman and XPS analysis suggest that sp³ carbon bonding decreases and sp² carbon bonding increases with the variations in substrate bias voltage and target sputtering power. Optical images and Raman characterization of worn surfaces confirm that the friction behavior of CN_x coatings is controlled by the directly sliding between CN_x coating and steel pin. Therefore, the reduction of friction coefficient is attributed to the decrease of sp³ carbon bonding in the CN_x coating. It is concluded that substrate bias voltage and target sputtering power are effective parameters for tailoring the structural and tribological properties of CN_x coatings.     

Principal band gaps and bond lengths of the alloy (AlxGa1−x)1−zInzPyAs1−y lattice matched to GaAs

The principal band gaps (E(Γ),E(L), and E(X)) and bond lengths (d(x,y,z))of the alloy (Al_xGa_1−x)_1−zIn_zP_yAs_1−y (where, 0 < x + z < 1, and 0 < y < 1) are calculated over the entire composition range based on the first order correlated function expansion (CFE) scheme. Defining the lattice strain parameter as , it is found that a good quality of alloy (defining ? < ∼ 0.5%) can be obtained in the composition region : 0 < x < ∼ 0.3, 0 < y < ∼ 0.2 and 0 < z < ∼ 0.1. The first order CFE lattice matching relations and corresponding band gaps for the alloy on the GaAs substrate are also determined. It is found that the principal band gaps of the alloy (Al_xGa_1−x)_1−zIn_zP_yAs_1−y lattice matched to GaAs covers band gap ranges: 1.45 eV E < (Γ) 2.69 eV, 1.80 eV < E(L) < 2.38 eV, and 1.97 eV < E(X) < 2.20 eV, while the direct band gap covers from 1.45 eV to 2.05 eV. Our theoretical prediction was compared with the existing experimental data.     

Preparation of Ti1− zNbzN ceramics by spark plasma sintering Ti1− zNbzOxNy nanopowders

Ti_1−zNb_zN ceramics were fabricated by sintering nanocrystalline titanium-niobium oxynitride (Ti_1−zNb_zO_xN_y) powders using spark plasma sintering (SPS) technique at 1060 °C for 3 min in an N₂ atmosphere. The phase composition and microstructure were characterized by XRD, SEM, TEM and EDS. The results showed that Ti_1−zNb_zN ceramics remained the cubic structures of Ti_1−zNb_zO_xN_y powders. There were XRD peak shifts in the cubic phases between Ti_1−zNb_zN ceramics and corresponding Ti_1−zNb_zO_xN_y powders. During the sintering process, oxygen separated from Ti_1−zNb_zO_xN_y to form titanium-niobium oxides. Ti_1−zNb_zN (0 < z < 1) had a more compact structure than TiO_xN_y and NbO_xN_y. Ti_0.5Nb_0.5N ceramic had the biggest grain size in the series of Ti_1−zNb_zN.     

New superconducting lead cuprate with 1201 structure, (Pb0.5B0.5) (SrLa)CuOz

New Pb-based superconducting cuprate with the 1201 structure has been synthesized in the (Pb_1 − yB_y)(Sr_2 − xLa_x)CuO_z system. From X-ray powder diffraction study, the almost-single 1201 phase sample is found to be obtained at x = 1.0 and y = 0.5 for the nominal composition of (Pb_1 − yB_y)(Sr_2 − xLa_x)CuO_z. The crystal structure has a tetragonal symmetry with the lattice parameters of a = 0.3779 nm and c = 0.8654 nm. The sample shows an onset of superconductivity at about 32 K as measured by the temperature dependence of the DC magnetic susceptibility.     

Synthesis of Al-Cr-O-N thin films in corundum and f.c.c. structure by reactive r.f. magnetron sputtering

Advanced PVD coatings for metal cutting applications must exhibit a multifunctional property profile including high hardness, chemical inertness and high temperature stability. Recently, ternary Al-Cr-O thin films with mechanical properties similar or superior to conventional aluminium oxide thin films have been suggested as potential materials meeting such demands. These coatings can be deposited at moderate temperatures in PVD processes. In this work, new quaternary Al-Cr-O-N coatings are suggested as alternative for offering thin film materials of high strength, hardness and even toughness. A combinatorial approach to the synthesis of Al-Cr-O-N thin films by means of reactive r.f. magnetron sputtering is presented. A thorough phase analysis of deposited coatings covering a wide range of elemental compositions revealed a well-defined phase transition from a corundum-type α-(Al_1 − x,Cr_x)_2 + δ(O_1 − y,N_y)₃ structure to a CrN-type f.c.c.-(Al_1 − x,Cr_x)_1 + θ(O_1 − y,N_y) structure as a function of the Al/Cr ratio and the nitrogen gas flow ratio. Detailed results on the coatings composition, constitution and microstructure are discussed compared to ternary Al-Cr-O thin films deposited by reactive r.f. magnetron sputtering under nearly identical conditions.     

Preparation of inorganic solid state thin film for electrochromic application

All oxide solid state ITO (indium tin oxide)/Li_yWO_3−x/Li_1−zMn₂O₄/ITO stacked structure was deposited on a silica glass substrate by pulsed laser deposition for its electrochromic application. The Li doped amorphous tungsten trioxide Li_yWO_3−x thin film prepared at room temperature and in oxygen pressure of 7 Pa got the color of blue due to the mixture valence state of tungsten. We found that the amorphous Li_1−zMn₂O₄ thin film was suitable for the electrochromic application in spite of the low ion conductivity along in-plane direction. The ITO electrode thin film deposited at room temperature showed the relatively high transmittance and the usable conductivity. The transmittance at a wavelength of 750 nm for the ITO/Li_yWO_3−x/Li_1−zMn₂O₄/ITO stacked film changed from 50% to 80% by the applied voltage, while the transmittance at around 450 nm did not change. The blue-colored electrochromic property could be observed for the all oxide solid state film.     

An interfacial study of sol-gel-derived magnesium apatite coatings on Ti6Al4V substrates

Magnesium apatite coatings on Ti6Al4V substrate were synthesized by the sol-gel dip-coating method. Magnesium was incorporated in the coating according to the formula (Ca_10−xMg_x)(PO₄)₆(OH)₂, where x = 0, 0.50, 1.00, 1.50 and 2.00. Approximately 2-μm-thick apatite coatings were derived after five cycles of dip-drawing-drying-firing process. A transitional region (R_t) was formed between substrate and coating during the firing process. Adhesion tests show that the adhesion strength between substrate and apatite coating is enhanced by the incorporation of magnesium in the coating. The quantity of magnesium incorporated appeared to correspond to the Mg-Ti-O chemical bonds formed in the transitional region, which contributed to the adhesion strength of the coatings.     

Deposition of nano-scaled CrTiAlN multilayer coatings with different negative bias voltage on Mg alloy by unbalanced magnetron sputtering

In a magnetron sputtering system, the negative substrate bias voltage has been used as a basic process parameter to modify the deposition structure and properties of coatings. In this paper we report the effect of bias voltage ranging from −40 V to −90 V on nano-scaled CrN/TiN/CrN/AlN (CrTiAlN) multilayer coatings synthesized on a Mg alloy by a closed-field unbalanced magnetron sputtering ion plating system in a gas mixture of Ar + N₂. The technological temperature and atomic concentration in the multilayer coatings were controlled by adjusting the current density of different metal magnetron targets and the plasma optical emission monitor. The composition, crystallographic structure, deposition model and friction coefficient of multilayer coatings were characterized by X-ray photoelectron spectrometry (XPS), X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and ball-on-disc testing. The experimental results show that the deposition model and friction coefficient of nano-scaled CrTiAlN multilayer coatings were significantly affected by the negative bias voltage (V_b). The nitride species in multilayer coatings mainly involve CrN, AlN and TiN, and XRD analysis shows that the crystallographic structure was face-centered cubic. Under different bias voltage conditions, the multilayer coating composition shows a fluctuation, and the Al and Cr concentrations respond in the opposite sense to the bias voltage, attaining their greatest values at V_b = −70 V. The surface and cross-sectional morphology shows deposition model change from a columnar model into non-columnar model with the increase in negative bias voltage. The friction coefficient of the nano-scaled multilayer coatings at V_b = −55 V stabilize after 10 000 cycles.     

Band offset calculations of ZnSxSe1−x/ZnSySe1−y heterostructures

In order to design devices based on II-VI materials, it is necessary to know the potential across the interface between two materials. Following our recent calculations which prove that the band gap energy of ZnS_xSe_1−x alloy has a nonlinear behaviour versus the sulphur composition x, it appears that an accurate knowledge of band offsets for ZnS_xSe_1−x/ZnS_ySe_1−y structures will be useful to model devices based on this heterostructure. On the basis of a model-solid theory, we report in this work the band offset calculations for zinc blende pseudomorphically strained ZnS_xSe_1−x/ZnS_ySe_1−y interface. From the results obtained, we have calculated the band gap energies of ZnS_xSe_1−x layers pseudomorphically strained on ZnS_ySe_1−y substrate as a function of compositions x and y in the whole range 0 ≤ x,y ≤ 1. Also, the band gaps of bulk ZnS_xSe_1−x deposed on ZnS_ySe_1−y for several values of y have been calculated versus the sulphur content x. Analytical formulas fitting these bands have been obtained. In view of the lack of theoretical calculations, our results seem likely to be useful especially in the design of ZnS_xSe_1−x structures for optoelectronic devices applications.     

First-principles calculations on surface hydroxyl impurities in BaF2

OH⁻ impurities located near the (1 1 1) BaF₂ surface have been studied by using density functional theory (DFT) with hybrid exchange potentials, namely DFT-B3PW. Twenty surface OH⁻ configurations were studied, and the hydroxyls located on the first surface layer are the energetically most favorable configurations. For the (1 1 1) BaF₂ surface atomic layers, the surface hydroxyls lead to a remarkable XY-translation and a dilating effect in the Z-direction, overcoming the surface shrinking effect in the perfect slab. Bond population analysis shows that the surface effect strengthens the covalency of surface OH⁻ impurities. The studies on band structures and density of states (DOS) of the surface OH⁻-impurity systems demonstrate that there are two defect levels induced by OH⁻ impurities. The O p_x and p_y orbitals form two superposed occupied O bands, located above the valence bands (VB), and the H s orbitals do the major contribution to an empty H band, located below the conduction bands (CB). Because of the surface effect, the O bands move downward, toward the VB with respect to these bands in the bulk case, and this leads to narrowing of the VB → O gap and widening of the O → H gap which corresponds to the first optical absorption.     

Experimental design in the electrodeposition process of porous composite Ni–P + TiO2 coatings

In this paper, an environmentally friendly electroplating process of the composite Ni–P + TiO₂ coatings was developed. Such coatings were prepared by in situ codeposition of Ni–P with TiO₂ powder (anatase) on a polycrystalline copper substrate from the nickel-plating bath in which titanium dioxide particles were held in suspension. The codeposition was carried out under galvanostatic conditions on a rotating disc electrode. To optimize the production conditions of the Ni–P coatings modified with TiO₂ by the method of mathematical statistics, the Hartley's polyselective quasi D optimum plan of experiments was used. The relationship between the percentage content in the electrodeposited composite Ni–P + TiO₂ coatings (z) and the electrodeposition parameters like cathodic current density (j_dep), bath temperature (T) as well as content of TiO₂ powder suspended in the galvanic bath (c), has been described by the adequate cubic polynomial equation and illustrated graphically. Based on the Hartley's plan it can be stated that the maximal TiO₂ content of 28.7 at.% in the Ni–P + TiO₂ coating can be obtained for the following optimal parameters of the electrodeposition process: j_dep = 0.05 A cm⁻², c = 99 g dm⁻³ and T = 40 °C. The chemical and physical characteristics of the coating obtained under such optimum conditions, have been presented. The deposit exhibits the presence of TiO₂ particles embedded into the amorphous Ni–P matrix. It has been ascertained that embedding of TiO₂ powder to the amorphous Ni–P matrix leads to the production of deposits with large surface area. Such electrochemical codeposition method may be a good alternative in the field of porous composite coatings used in gas evolution.     

Synthesis and luminescence properties of color-tunable Ba1−ySryLa4−xTbx(WO4)7 (x = 0.02-1.2, y = 0-0.4) phosphors

Ba_1−ySr_yLa_4−xTb_x(WO₄)₇ (x = 0.02-1.2, y = 0-0.4) phosphors were prepared via a solid-state reaction and their photoluminescence properties were investigated. An analysis of the decay behavior indicates that the energy migration between Tb³⁺ ions is conspicuous in the ⁵D₃ → ⁷F₄ transition due to the cross-relaxation in BaLa₄(WO₄)₇. A partial substitution of Ba²⁺ by Sr²⁺ can not only enhance the emission intensity but also increase the solid solubility of Tb³⁺ in Ba_1−ySr_yLa_4−xTb_x(WO₄)₇. The emission intensity of the ⁵D₄ → ⁷F_J (J = 4, 5, 6) transitions can be enhanced by increasing Sr²⁺ and Tb³⁺ concentrations, with the optimal conditions being x = 1.2, y = 0.4 (Ba_0.6Sr_0.4La_2.8Tb_1.2(WO₄)₇). Under near-UV excitation at 379 nm, the CIE color coordinates of Ba_1−ySr_yLa_4−xTb_x(WO₄)₇ vary from blue (0.212, 0.181) at x = 0.04, y = 0, to green (0.245, 0.607) at x = 1.2, y = 0.4.     

Dielectric and microwave absorbing properties of low power plasma sprayed Al2O3/Nb composite coatings

Al₂O₃/Nb composite coatings were sprayed on graphite substrates by low power atmospheric plasma spraying (LPAPS) with an internally fed powder torch. The composite particles were agglomerated with different mass fractions by spray-drying technology. The microstructure and dielectric properties of coatings were investigated. The microstructure of composite coatings shows a uniform dispersion of metal particles in the composite coatings. Both the real (?′) and imaginary (?″) parts of the complex permittivity increase with increasing Nb content over the frequency range of 8.2-12.4 GHz, which is ascribed to space charge polarization and conductance loss, respectively. By calculating the microwave-absorption as a single-layer absorber, reflection loss values exceeding −10 dB can be obtained in the frequency range of 10.0-11.8 GHz with 10 wt% Nb content coating when the coating thickness is 1.5 mm.     

Morphotropic phase boundary in high temperature ferroelectric xBi(Zn1/2Ti1/2)O3 − yPbZrO3 − zPbTiO3 perovskite ternary solid solution

A bismuth and lead oxide based perovskite ternary solid solution xBi(Zn_1/2Ti_1/2)O₃ − yPbZrO₃ − zPbTiO₃ (xBZT − yPZ − zPT) was investigated as an attempt to develop a high T_C ferroelectric material for piezoelectric sensor and actuator applications. A morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was determined through an XRD study on a pseudobinary line 0.1BZT − 0.9[xPT − (1 − x)PZ] for composition 0.1Bi(Zn_1/2Ti_1/2)O₃ − 0.5PbZrO₃ − 0.4PbTiO₃. Enhanced piezoelectric and ferroelectric activities were observed for MPB composition with dielectric constant ε_r′ ~ 23,000 at Curie temperature (T_C) ≈ 320 °C, remanent polarization (P_r) = 35 μC/cm², piezoelectric coefficient (d₃₃) = 300 pC/N, unipolar strain = 0.15%, and electromechanical coupling coefficient (k_P) = 0.45.     

Mechanical properties of superhard TiB2 coatings prepared by DC magnetron sputtering

Superhard titanium diboride (TiB₂) coatings (H_v> 40 GPa) were deposited in Ar atmosphere from stoichiometric TiB₂ target using an unbalanced direct current (d. c.) magnetron. Polished Si (0 0 1), stainless steel, high-speed steel (HSS) and tungsten carbide (WC) substrates were used for deposition. The influence of negative substrate bias, U_s, and substrate temperature, T_s, on mechanical properties of TiB₂ coatings was studied. X-ray diffraction (XRD) analysis showed hexagonal TiB₂ structure with (0 0 01) preferred orientation. The texture of TiB₂ coatings was dependent upon the ion bombardment (U_s increased from 0 to −300 V) and the substrate heating (T_s increased from room temperature (RT) to 700 °C). All TiB₂ coatings were measured using microhardness tester Fischerscope H100 equipped with Vickers and Berkovich diamond indenters and exhibited high values of hardness H_v up to 34 GPa, effective Young's modulus E*=E/(1-ν) ranging from 450 to 600 GPa; here E and ν are the Young's modulus and Poisson's ratio, respectively, and elastic recovery W_e≈80%. TiB₂ coating with a maximum hardness H_v≈73 GPa and E*≈580 GPa was sputtered at U_s=−200 V and T_s=RT. Macrostresses of coatings σ were measured by an optical wafer curvature technique and evaluated by Stoney equation. All TiB₂ coatings exhibited compressive macrostresses.