30.4nmSi／C多层膜反射镜的制备与测量

采用离子束溅射镀膜装置制备了一种新的材料组合Ｓｉ／Ｃ多层膜,用于３０．４ｎｍ波段的正入射多层膜反射镜。并用软Ｘ射线反射率计测得其反射比最大值为０．１４。有效地抑制了１５．０ｎｍ处的二级衍射峰。     

离子束溅射制备Si／Ge多层膜研究

采用离子束溅射方法在Si衬底上制备Si／Ge多层膜，通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品；通过X射线衍射、Raman散射等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。     

Mo/Si和Mo/B_4C软X射线多层膜的界面热稳定性研究

用磁控溅射法制备Mo／Si多层膜（周期为25nm，20层）和Mo／B4C多层膜（周期为3．9nm，121层），并在真空中加热30min，温度为200，400，600，800和1000℃。用小角X射线衍射法和透射电镜研究不同温度下（保温0．5h）加热的样品。实验结果表明，当加热温度达600℃时，Mo／Si多层膜周期被破坏。而Mo／B4C多层膜在800℃加热温度下仍保持周期性层状结构。说明Mo／B4C多层膜不仅周期只有3．9nm，而且具有很好的热稳定性，可以作为较短波长的软X射线多层膜推广应用。     

波长小于10nm的软X射线多层膜制备技术

软X射线短波段区域(1～10nm)高反射率多层膜的制备对软X射线光学的研究具有十分重要的意义.该波段要求镀膜过程中能减小界面扩散,实现膜厚控制,从而严格限制了制备技术的应用.介绍了软X射线短波段多层膜的发展现状和制备技术,主要包括蒸发沉积、溅射沉积、脉冲激光沉积技术和激光分子束外延,对这些方法进行了比较并提出了今后的研究方向.     

离子束溅射Si／Ge多层膜的界面结构研究

采用离子束溅射技术，在玻璃衬底上制备了不同周期数的Si／Ge多层膜样品。通过Raman光谱和X射线小角衍射对薄膜进行了表征和分析，发现随着生长周期数的增加，层与层之间的互扩散效应逐渐减弱，界面结构逐渐清晰，生长周期为25的样品界面最平整。     

溅射Si/Ge多层膜及其发光誊性研究

采用离子束溅射技术,在玻璃衬底上制备了不同周期数的Si/Ge多层膜样品.利用X射线小角衍射、Raman散射光谱和室温光致发光(PL)对样品进行表征.结果表明,2.0～2.3eV之间的发光带是由薄膜中的各种缺陷形成的;1.77～1.84eV之间的发光带来自薄膜中的非晶结构和晶粒间的缺陷;1.53eV发光峰则可能源于纳米Ge晶粒发光.     

磁控溅射法制备Mo/B4C软X射线多层膜

用DC和RF磁控溅射法制备出了波长小于 10nm波段的Mo/B4 C软X射线多层膜反射镜。掠入射X射线衍射仪的测量结果表明 ,磁控溅射法有很高的控制精度 ,制备出的Mo/B4 C软X射线多层膜周期结构非常好 ,表 (界 )面粗糙度非常小 ,约为 0 4nm。     

X射线光学多层膜的研究

介绍X射线光学多层膜的构成原理、制作、测量方法及在超高真空系统中的研制技术。     

C/W多层膜的制备及其光学特性

介绍了软X射线波段C/W多层膜的制备和光学性能检测.采用高真空直流磁控溅射方法在超光滑硅基片上制作了C/W多层膜,用X射线衍射(XRD)仪,小角测量方法测试多层膜的光学性能,采用透射电镜(TEM)观测多层膜断层样品的微观结构,并在同步辐射软X射线光束线上,测试了所制备的C/W多层膜样品的反射率,然后对测试结果进行拟合分析.结果表明,所制备的C/W多层膜样品的质量较高,界面清晰,粗糙度小,所有膜层均为无定形态,没有晶相生成,以44.2°入射在5.9 nm处有约6%的反射率.     

磁控溅射法制备Mo／B4C软X射线多层膜

用ＤＣ和ＲＦ磁控溅射法制备出了波长小于１０ｎｍ的波段的Ｍｏ／Ｂ４Ｃ软Ｘ射线多层膜反射镜。掠入射Ｘ射线衍射仪的测量结果表明,磁控溅射法有很高的控制精度,制备出的Ｍｏ／Ｂ４Ｃ软Ｘ射线多层膜周期结构非常好,表（界）面粗糙度非常小,约为０．４ｎｍ。     

Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

The effect of carbon (C) and amorphous silicon (a-Si) thicknesses on the formation of SiC nanoparticles (np-SiC) in sandwiched Si/C/Si and C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering system and vacuum thermal annealing at 500, 700, 900 °C for 1.0 h. Three-layer a-Si/C/a-Si structures with thicknesses of 50/200/50 nm and 75/150/75 nm and a two-layer C/a-Si structure of 200/50 nm were examined in this study. The size and density of np-SiC were strongly influenced by the annealing temperature, a-Si thickness and layer number. Many np-SiC appeared at 900 °C at a density order about 10⁸ cm^− 2 in both three-layer structures while no particles formed in the two-layer structure. The thick a-Si structure (75/150/75 nm) produces a particle density approximately 1.8 times higher than thin structure (50/200/50 nm). This implies that thick a-Si structure had a lower activation energy of SiC formation compared to the thin a-Si structure. Few particles were found at 700 °C and no particles at 500 °C in both three-layer structures. The np-SiC formation is a thermally activated reaction. The higher temperature leads to higher particle density. A mechanism of np-SiC formation in thermodynamic and kinetic viewpoints is proposed.     

DC magnetron sputtering of Si to form SiO2 in low-energy ion beam

Silicon dioxide (SiO₂) films were deposited by magnetron sputtering and ion-beam oxidation (IBO) in separate zones at ambient temperature. The optical and structural characteristics of the films were analyzed by spectrophotometry, Fourier transform infrared absorption spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscope. The oxygen ratio in the ion beam and the energy of ion bombardment during deposition has strong influence on the optical and physical properties of SiO₂ films. The experimental results indicated that the IBO method could finely manipulate the structure and properties of the growing films.     

用光学全息方法研制软X射线Bragg-Fresnel光学元件

介绍了软X射线Bragg Fresnel光学元件的特点 ,并以磁控溅射法制备多层膜 ,再采用光学全息方法在涂有光刻胶的多层膜表面上形成波带片图形 ,通过显影、离子束刻蚀完成元件的制作     

Ge/Si薄膜材料生长的偏压效应研究

利用超高真空磁控浅射系统生长了不同偏压下Ge／Si薄膜材料,所生长的材料采用了不加偏压和加偏压的生长环境。通过X射线小角衍射分析表明,加一定偏压的Ge／Si薄膜材料的层状远比不加偏压的材料好,并且加偏压可有效降低材料的生长温度。在加15－25V偏压明,获得了300℃的生长温度下,层状优良,粗糙度小的薄膜材料。     

Structural and mechanical properties of ZrN films prepared by ion beam sputtering with varying N2/Ar ratio and substrate temperature

Zirconium nitride (ZrN) films were deposited by ion beam sputtering technique on stainless steel 304 substrates using a mix of (Ar+N₂) gas. In this paper, the effects of N₂/(N₂+Ar) flow ratio (F(N₂)) and substrate temperature on the microstructure and microscopic properties of the deposited films were investigated. The phase and the morphology were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively; moreover, the composition depth profile of ZrN was obtained using secondary ion mass spectroscopy (SIMS). In a wide range of F(N₂) (10-54%), the intensity of (1 1 1) peak increased which was the preferred orientation, while for F(N₂) more than 54% the ZrN peak intensity was decreased and the amorphous structure was formed at 95%. The XRD patterns presented a texture change due to the processing temperature, which was varied within the range 200-550 °C. At 400 °C, the (1 1 1) crystalline plane intensity was higher than the other ones, leading to the presence of a preference for this orientation. Good planarity of the deposited films was confirmed by SEM, it did not reveal any undulations, fractures, or cracking. The Vickers micro-hardness tester with a load of 25 g was used to measure the hardness of the films. The results showed that the structural and mechanical properties were strongly influenced by nitrogen ratio and substrate temperature.     

A Novel Fabrication and Properties Investigation of Permalloy-SiO2 Granular Films with Induced Anisotropy

Permalloy-SiO₂ (PS) granular films with various metallic volume fraction (x_V) have been fabricated by non-continuum multilayer alternate sputtering with different power to generate appropriate controllable anisotropy and control the microstructure precisely. Transmission Electron Microscopy (TEM) investigation shows that the PS granular films consist of Permalloy crystalline nano-sized granules embedded in amorphous SiO₂ matrix. The films exhibit excellent soft magnetic properties and high resistivity because of the unique microstructure and composition variety, both of which have been controlled by adjusting the preparation conditions. Soft magnetic properties of the films are improved with increasing metallic x_V and sputtering power, while resistivity of the films goes down with increasing x_V and sputtering power. Furthermore, the controllable anisotropy generated in alternated sputtering process is applicable to integrated planar magnetic inductor which operates in the range of Radio Frequency (RF) for device performance enhancement.     

XPS结合氩离子溅射剖析Si/C多层膜的化学状态

采用X射线光电子能谱结合氩离子溅射对用作锂离子电池负极的Si/C多层膜进行了表面测试及深度剖析,获得了Si/C多层膜结构中不同深度位置的成分及化学状态.分析结果表明,Si/C多层膜中各层Si、C薄膜之间存在界面元素相互扩散,扩散至相邻层薄膜中的Si、C元素主要以化合物SiC形式存在,且处于不同位置的SiC的化学键能受周...