An in-plane high-sensitivity, low-noise micro-g silicon accelerometer with CMOS readout circuitry

A high-sensitivity, low-noise in-plane (lateral) capacitive silicon microaccelerometer utilizing a combined surface and bulk micromachining technology is reported. The accelerometer utilizes a 0.5-mm-thick, 2.4/spl times/1.0 mm/sup 2/ proof-mass and high aspect-ratio vertical polysilicon sensing electrodes fabricated using a trench refill process. The electrodes are separated from the proof-mass by a 1.1-/spl mu/m sensing gap formed using a sacrificial oxide layer. The measured device sensitivity is 5.6 pF/g. A CMOS readout circuit utilizing a switched-capacitor front-end /spl Sigma/-/spl Delta/ modulator operating at 1 MHz with chopper stabilization and correlated double sampling technique, can resolve a capacitance of 10 aF over a dynamic range of 120 dB in a 1 Hz BW. The measured input referred noise floor of the accelerometer-CMOS interface circuit is 1.6/spl mu/g//spl radic/Hz in atmosphere.     

A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.     

IR uncooled bolometers based on amorphous Ge/sub x/Si/sub 1-x/O/sub y/ on silicon micromachined structures

In this work, we present the fabrication of bulk micromachined microbolometers made of amorphous germanium-silicon-oxygen compounds (Ge/sub x/Si/sub 1-x/O/sub y/) grown by reactive sputtering of a Ge/sub 0.85/Si/sub 0.15/ target. We describe the complete procedure for fabricating thermally isolated microbolometers consisting of Ge/sub x/Si/sub 1-x/O/sub y/ sensing films deposited on sputtered silicon dioxide membranes suspended over a silicon substrate. The electrical properties of the sensitive material are set by controlling the deposition parameters of the sputtering technique. Under optimum deposition conditions, Ge/sub x/Si/sub 1-x/O/sub y/ layers with moderate electrical resistivity and thermal coefficient at room temperature as high as -4.2% /spl middot/ K/sup -1/ can be obtained. Isolated structures measured at atmospheric pressure in air have a thermal conductance of 3 /spl times/ 10/sup -6/ W /spl middot/ K/sup -1/ and a thermal capacitance of 6/spl middot/10/sup -9/ W /spl middot/ s /spl middot/ K/sup -1/, yielding a response time of 1.8 ms. Bolometers with an IR responsivity of 380 V /spl middot/ W/sup -1/ and a NEDT of 3.85 K at 100 nA bias current are obtained. The use of sputtered films allows designing a fully low-temperature fabrication process, wholly compatible with silicon integrated circuit technologies.     

Design, fabrication, and measurement of high-sensitivity piezoelectric microelectromechanical systems accelerometers

Microelectromechanical systems (MEMS) accelerometers based on piezoelectric lead zirconate titanate (PZT) thick films with trampoline or annular diaphragm structures were designed, fabricated by bulk micromachining, and tested. The designs provide good sensitivity along one axis, with low transverse sensitivity and good temperature stability. The thick PZT films (1.5-7 /spl mu/m) were deposited from an acetylacetonate modified sol-gel solution, using multiple spin coating, pyrolysis, and crystallization steps. The resulting films show good dielectric and piezoelectric properties, with P/sub r/ values >20 /spl mu/C/cm/sup 2/, /spl epsiv//sub r/>800, tan/spl delta/<3%, and |e/sub 31,f/| values >6.5 C/m/sup 2/. The proof mass fabrication, as well as the accelerometer beam definition step, was accomplished via deep reactive ion etching (DRIE) of the Si substrate. Measured sensitivities range from 0.77 to 7.6 pC/g for resonant frequencies ranging from 35.3 to 3.7 kHz. These accelerometers are being incorporated into packages including application specific integration circuit (ASIC) electronics and an RF telemetry system to facilitate wireless monitoring of industrial equipment.     

Two-axis single-crystal silicon micromirror arrays

This work presents the design, fabrication, and testing of a two-axis 320 pixel micromirror array. The mirror platform is constructed entirely of single-crystal silicon (SCS) minimizing residual and thermal stresses. The 14-/spl mu/m-thick rectangular (750/spl times/800 /spl mu/m/sup 2/) silicon platform is coated with a 0.1-/spl mu/m-thick metallic (Au) reflector. The mirrors are actuated electrostatically with shaped parallel plate electrodes with 86 /spl mu/m gaps. Large area 320-mirror arrays with fabrication yields of 90% per array have been fabricated using a combination of bulk micromachining of SOI wafers, anodic bonding, deep reactive ion etching, and surface micromachining. Several type of micromirror devices have been fabricated with rectangular and triangular electrodes. Triangular electrode devices displayed stable operation within a (/spl plusmn/5/spl deg/, /spl plusmn/5/spl deg/) (mechanical) angular range with voltage drives as low as 60 V.     

Fabrication and measured performance of a first-generation microthermoelectric cooler

The measured performance of a column-type microthermoelectric cooler, fabricated using vapor-deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ with an average thickness of 4.5 /spl mu/m, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130/spl deg/C, are -74 /spl mu/V/K and 3.6/spl times/10/sup -5/ /spl Omega/-m (n-type, power factor of 0.15 mW/K/sup 2/-m), and 97 /spl mu/V/K and 3.1/spl times/10/sup -5/ /spl Omega/-m (p-type, power factor of 0.30 mW/K/sup 2/-m). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 /spl mu/m is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The average cooling achieved is about 1 K. Fabrication challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector patterning and deposition.     

Encapsulated submillimeter piezoresistive accelerometers

While micromachined accelerometers are widely available and used in various applications, some biomedical applications require extremely small dimensions (相似文献   

A micromechanical flow sensor for microfluidic applications

We fabricated a microfluidic flow meter and measured its response to fluid flow in a microfluidic channel. The flow meter consisted of a micromechanical plate, coupled to a laser deflection system to measure the deflection of the plate during fluid flow. The 100 /spl mu/m square plate was clamped on three sides and elevated 3 /spl mu/m above the bottom surface of the channel. The response of the flow meter was measured for flow rates, ranging from 2.1 to 41.7 /spl mu/L/min. Several fluids, with dynamic viscosities ranging from 0.8 to 4.5/spl times/10/sup -3/ N/m, were flowed through the channels. Flow was established in the microfluidic channel by means of a syringe pump, and the angular deflection of the plate monitored. The response of the plate to flow of a fluid with a viscosity of 4.5/spl times/10/sup -3/ N/m was linear for all flow rates, while the plate responded linearly to flow rates less than 4.2 /spl mu/L/min of solutions with lower dynamic viscosities. The sensitivity of the deflection of the plate to fluid flow was 12.5/spl plusmn/0.2 /spl mu/rad/(/spl mu/L/min), for a fluid with a viscosity of 4.5/spl times/10/sup -3/ N/m. The encapsulated plate provided local flow information along the length of a microfluidic channel.     

Single mask, large force, and large displacement electrostatic linear inchworm motors

We have demonstrated a family of large force and large displacement electrostatic linear inchworm motors that operate with moderate to high voltages. The inchworm motor design decouples actuator force from total travel and allows the use of electrostatic gap-closing actuators to achieve large force and large displacement while consuming low power. A typical inchworm motor measures 3 mm /spl times/ 1 mm /spl times/ 50 /spl mu/m and can lift over 130 times its own weight. One motor has achieved a travel of 80 /spl mu/m and a calculated force of 260 /spl mu/N at 33 V. The force density of that motor was 87 /spl mu/N/mm/sup 2/ at 33 V and the energy efficiency was estimated at 8%. Another motor displaced the shuttle at an average velocity of almost 4 mm/s and achieved an estimated power density of 190 W/m/sup 3/. Motors were cycled 23.6 million times for over 13.5 h without stiction. This family of motors is fabricated in silicon-on-insulator (SOI) wafers using a single mask.     

Cubic millimeter power inductor fabricated in batch-type wafer technology

A hybrid technology for the realization of three-dimensional (3-D) miniaturized power inductors is presented. Our devices consist of planar Cu coils on polyimide substrates, and mm-size ferrite magnetic cores, obtained by three-dimensional micro-patterning of ferrite wafers using powder blasting. The coils are realized using an in-house developed high-resolution polyimide spinning and Cu electroplating process. Winding widths down to 5 /spl mu/m have been obtained and total device volumes are ranging between 1.5 and 10 mm/sup 3/. Inductive and resistive properties are characterized as a function of frequency; inductance values in the 100 /spl mu/H range have been obtained.     

MgO sacrificial layer for micromachining uncooled Y-Ba-Cu-O IRmicrobolometers on Si3N4 bridges

This paper describes a new micromachining technique for fabrication of semiconducting yttrium barium copper oxide (YBCO) microbolometers using magnesium oxide (MgO) as the sacrificial layer. This type of bolometer can be operated at room temperature, providing a low-cost alternative for more expensive cryogenically cooled thermal detectors used for infrared (IR) imaging. The new micromachining techniques described here would enable the fabrication of YBCO IR focal plane array (FPA) with CMOS signal processing circuitry. Devices were fabricated by growing YBCO films on 4000-Å-thick suspended Si₃N₄ membranes measuring 40×40 μm² in area and extended over micromachined air gaps, which provide the low thermal conductivity that is required for high responsivity. The gap was created by etching an MgO sacrificial layer. This is the first example of using MgO in this type of application. The MgO sacrificial layer technique is fully CMOS compatible and presents no major fabrication challenges. Thermal conductivities achieved in vacuum with the Si₃N₄ suspended structures were on the order of 10^-7 W/K, yielding an effective thermal isolation for bolometer operation. Optical characterization has shown responsivity up to 60 kV/W and detectivity over 10⁸ cm.Hz^1/2/W to black-body IR radiation, indicating that this technology is a suitable candidate for low-cost thermal imaging     

Polymer-based cantilevers with integrated electrodes

An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-/spl mu/m-thick photo-structured layer for the cantilever, and a 200-/spl mu/m-thick layer for the chip body. The releasing method is based on dry etching of a 2-/spl mu/m-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-/spl mu/m-long and 100-/spl mu/m-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2/spl times/2 /spl mu/m/sup 2/ Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of /spl cong/1 N/m and a resonance frequency of /spl cong/17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200/spl Omega/, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 /spl mu/T/Hz/sup 1/2/ at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications.     

Design and microfabrication of a flexible oral electrotactile display

A polyimide-based flexible oral tactile display with an array of 7/spl times/7 tactors is designed for presentation of electrotactile patterns onto the roof of the mouth. The device is microfabricated on a rigid substrate using thin-film and electroplating processes and then released by peeling it off from the substrate. Dome-shaped tactors are electroplated through round openings 300 /spl mu/m in diameter in the flexible polyimide base for more uniform current distribution and better contact with the skin. The overall dimensions of the tactor array are 18.5/spl times/18.5 mm/sup 2/, with a center-to-center spacing of 2.54 mm between adjacent tactors. Each tactor is 200 /spl mu/m in height and 700 /spl mu/m in diameter. The device robustness is improved by using a grid-pattern design for the openings to overcome the stress mismatch between the rigid tactors and the flexible base. The flexible oral tactile display has been tested in human subject experiments and found to deliver comfortable electrotactile stimulation with relatively low stimulation intensities.     

Surface micromachined paraffin-actuated microvalve

Normally-open microvalves have been fabricated and tested which use a paraffin microactuator as the active element. The entire structure with nominal dimension of /spl phi/600 /spl mu/m /spl times/ 30 /spl mu/m is batch-fabricated by surface micromachining the actuator and channel materials on top of a single substrate. Gas flow rates in the 0.01-0.1 sccm range have been measured for several devices with actuation powers ranging from 50 to 150 mW on glass substrates. Leak rates as low as 500 /spl mu/sccm have been measured. The normally-open blocking microvalve structure has been used to fabricate a precision flow control system of microvalves consisting of four blocking valve structures. The control valve is designed to operate over a 0.01-5.0 sccm flow range at a differential pressure of 800 torr. Flow rates ranging from 0.02 to 4.996 sccm have been measured. Leak rates as low as 3.2 msccm for the four valve system have been measured.     

A wafer-scale membrane transfer Process for the fabrication of optical quality, large continuous membranes

This paper describes a new fabrication technique developed for the construction of large area mirror membranes via the transfer of wafer-scale continuous membranes from one substrate to another. Using this technique, wafer-scale silicon mirror membranes have been successfully transferred without the use of sacrificial layers such as adhesives or polymers. This transfer technique has also been applied to the fabrication and transfer of 1 /spl mu/m thick corrugated membrane actuators. These membrane actuators consist of several concentric-ring-type corrugations constructed within a polysilicon membrane. A typical polysilicon actuator membrane with an electrode gap of 1.5 /spl mu/m, fabricated using the wafer-scale transfer technique, shows a vertical deflection of 0.4 /spl mu/m at 55 V. The mirror membranes are constructed from single-crystal silicon, 10 cm in diameter, and have been successfully transferred in their entirety. Using a white-light interferometer, the measured average peak-to-valley surface figure error for the transferred single-crystal silicon mirror membranes is approximately 9 nm as measured over a 1 mm/sup 2/ membrane area. The wafer-scale membrane transfer technique demonstrated in this paper has the following benefits over previously reported transfer techniques: 1) No postassembly release process to remove sacrificial polymers is required. 2) The bonded interface is completely isolated from any acid, etchant, or solvent during the transfer process, ensuring a clean and uniform membrane surface. 3) Our technique is capable of transferring large, continuous membranes onto substrates.     

Polymer-based wide-bandwidth and high-sensitivity micromachined electron tunneling accelerometers using hot embossing

The first PMMA-based membrane tunneling accelerometers were fabricated by hot embossing replication with silicon molds. The silicon molds were prepared by a combinative etching technique involving anisotropic bulk etching and modified plasma dry etching. The constructed molds hold both pyramid pits and positive profile sidewalls with smooth surfaces and steep angles, which were necessary for the hot embossing demolding. After electrodes patterned on embossed PMMA structures, the accelerometers, 8 mm /spl times/8 mm /spl times/1 mm, were packaged and assembled on a measurement circuit board. The exponential relationship between tip currents and applied deflection voltages presented a tunneling barrier height of 0.17 eV. The natural frequency of sensors was about 128 Hz. The bandwidth of the feedback system was 6.3 kHz. The sensitivity of voltage over acceleration was 20.6 V/g, and the resolution was 0.2485 /spl mu/g//spl radic/Hz (g=9.8 m/s/sup 2/).     

Silicon-on-insulator microfluidic device with monolithic sensor integration for /spl mu/TAS applications

A novel concept for the integration of liquid phase charge sensors into microfluidic devices based on silicon-on-insulator (SOI) technology is reported. Utilizing standard silicon processing we fabricated basic microfluidic cross geometries comprising of 5-10-mm-long and 55-/spl mu/m-wide channels of 3 /spl mu/m depth by wet sacrificial etching of the buried oxide of an SOI substrate. To demonstrate the feasibility of fluid manipulation along the channel we performed electroosmotic pumping of a dye-labeled buffer solution. At selected positions along the channel we patterned the 205-nm thin top silicon layer into freely suspended, 10-/spl mu/m wide bars bridging the channel. We demonstrate how these monolithically integrated bars work as thin-film resistors that sensitively probe changes of the surface potential via the field effect. In this way, a combination of electrokinetic manipulation and separation of charged analytes together with an on-chip electronic detection can provide a new basis for the label-free analysis of, for example, biomolecular species as envisaged in the concept of micrototal analysis systems (/spl mu/TAS) or Lab-on-Chip (LOC).     

Self-supporting uncooled infrared microbolometers with low-thermalmass

A new micromachined microbolometer array structure is presented that utilizes a self-supporting semiconducting yttrium barium copper oxide (Y-Ba-Cu-O) thin film thermometer. The Y-Ba-Cu-O thermometer is held above the substrate only by the electrode arms without the need of any underlying supporting membrane. This represents a significant improvement in the state-of-the-art for microbolometers by eliminating the thermal mass associated with the supporting membrane. The reduced thermal mass permits lowering the thermal conductance to the substrate to obtain increased responsivity or having a shorter thermal time constant to allow for higher frame rate camera. The simple structure does not suffer from warping problems associated with stress imbalances in multilayer microbolometer structures that utilize a supporting membrane such as Si₃N₄. Devices were fabricated by growing Y-Ba-Cu-O films on a conventional polyimide sacrificial layer mesa. Subsequent etching of the sacrificial layer provides the air gap that thermally isolates the microbolometer. Y-Ba-Cu-O possesses a relatively high temperature coefficient of resistance of 3.1%/K at room temperature. The 400-nm-thick Y-Ba-Cu-O film exhibited absorptivity of about 30%. The responsivity and detectivity approached 10⁴ V/W and 10⁸ cm Hz^1/2/W to filtered blackbody infrared (IR) radiation covering the 2.5 to 13.5 μm band. This extrapolates to noise equivalent temperature difference (NETD) less than 100 mK. The micromachining techniques employed are post-complementary metal-oxide-semiconductor (CMOS) compatible, allowing for the fabrication of focal plane arrays for IR cameras     

Piezoelectrically actuated dome-shaped diaphragm micropump

This paper describes a piezoelectric micropump built on a dome-shaped diaphragm with one-way parylene valves. The micropump uses piezoelectric ZnO film (less than 10 /spl mu/m thick) to actuate a parylene dome diaphragm, which is fabricated with an innovative, IC-compatible process on a silicon substrate. Piezoelectric ZnO film is sputter-deposited on a parylene dome diaphragm with its C-axis oriented perpendicular to the dome surface. Two one-way check valves (made of parylene) are integrated with a piezoelectrically actuated dome diaphragm to form a multi-chip micropump. The fabricated micropump (10/spl times/10/spl times/1.6 mm/sup 3/) consumes extremely low power (i.e., 3 mW to pump 3.2 /spl mu/L/min) and shows negligible leak up to 700 Pa static differential pressure.     

Electronically controllable microvalves based on smart hydrogels: magnitudes and potential applications

Electronically controllable microvalves based on temperature sensitive hydrogels as actuators are described. A thermal-electronic interface was used for electronic control of the liquid flow. The hydrogel actuators were directly placed in a flow channel. They used the process medium as the swelling agent. Because of the direct placement into the channel the elastic properties of the hydrogel actuator were utilized to improve the pressure insensitivity, to achieve high particle tolerance and to avoid a leakage flow. The microvalves show an extremely simple structure. They can be fabricated using conventional micro technology within a few technical steps. The microvalves can also be miniaturized to a currently unrivalled extent of about 4 /spl mu/m/spl times/4 /spl mu/m/spl times/1/spl mu/m. Valves for "laboratory on chip" applications can already be obtained. The switching times of the electronically controllable microvalves based on hydrogels are 0.3 s to 10 s.