高质量人造石英晶体的生产（Ⅱ）

高质量人造石英晶体的生产（Ⅱ）张万鲲（四川压电与声光技术研究所，重庆，６３００６０）４杂质的迁移在人造石英晶体中的杂质不是填隙的就是取代的，填隙式杂质可能是由于晶体结构中大的、敞开的０．１～０．２ｎｍｃ轴隧道的存在。这些填隙式杂质，在高温和电场条件下...     

Si_（1－x）Ge_x合金的浅杂质光电导谱

在４．２—５０Ｋ温度范围内研究了直拉法生长的富含Ｓｉ的Ｓｉ（１－ｘ）Ｇｅｘ合金的浅杂质光电导谱，首次观察到了锗硅合金中从硼受主杂质基态到ｐ３／２价带的光电离跃迁过程及硼受主杂质的与自旋－轨道分裂带（ｐ１／２价带）相联系折光电导过程，并由此确定了硼杂质的电离能．结果表明，低锗组分下，Ｓｉ（１－ｘ）Ｇｅｘ合金中浅受主杂质电离能随合金组分线性变化．     

非掺杂LEC-InAs单晶的残留杂质与电学性能研究

有关非掺InAs单晶中的施主杂质、缺陷及其产生规律的尚不清楚。本文利用辉光放电质谱（GDMS）定量分析了LEC法生长的InAs单晶的残留杂质,结合Hall测量、Raman散射和红外吸收等研究了施主杂质的来源和缺陷对材料性质的影响。     

采用微分电导法（R□）评估POLY／SIS／Si界面状况

提出一种采用微分电导法（R□）分别检测实验样品和陪测样品的R□，同时引入α和αn因子分别评估自掺杂多晶硅生长前Si表面清洗状况（SIS层厚度）和自掺杂多晶硅生长后退火或后续高温多晶硅杂质载流子退火特性以及杂质在POLY／SIS／Si界面流动情况。通过实际检测发现这种方法可以定性判断SIS厚薄和了解自杂多晶硅生长后退火或后续高温多晶硅杂质载流子退火特性以及可以半定量估算出自掺杂多晶硅杂质流向N^-层或N^ 层流向自掺杂多晶硅层的杂质总量。     

背面多孔硅对SIMOX中铜杂质的吸除作用

在SIMOX材料的背面成功地制备了多孔硅层,再在正面故意注入1×1015cm-2剂量的铜杂质。经900℃退火,二次离子质谱（SIMS）测试表明钢杂质能穿过理层SiO2并在背面多孔硅处富集。用剖面投射电子显微镜（XTEM）分析了埋层SiO2和背面多孔硅层的微观结构,背面多孔硅层及其多孔硅层同硅衬底之间“树技状”的过渡区被认为是铜杂质有效的吸除中心。     

光致发光测定6H－SiC中的氮掺杂浓度

杂质和本征发光强度可反映出掺杂浓度。本文介绍了一种测量６Ｈ－ＳｉＣ中氮杂质的校准方法。该方法对于１０￣（１４）～１０￣（１６）ｃｍ￣（－３）浓度范围内的ｎ型掺杂都是有效的。并对光致发光实验过程中激励强度、温度的影响以及与受主有关光谱的观测进行了研究。     

低电阻率PTC陶瓷及限流保安器的研究

采用Ｓｂ（３＋）、Ｎｂ（５＋）双施主掺杂并添加ＡＳＴＬ玻璃料，研制出限流保安器用的ＢａＴｉＯ３基低电阻率ＰＴＣ陶瓷材料。探讨了施主杂质、受主杂质等微量元素及玻璃料对ＰＴＣ陶瓷性能的影响。应用上述ＰＴＣ陶瓷制作出开关温度Ｔｂ＝１２０℃的限流保安器。     

面向MOCVD生长InAs/GaSb超晶格红外探测的InAs衬底表面制备

采用全反射X射线荧光光谱（total reflection X-ray fluorescence,TXRF）和X射线光电子能谱（X-ray photo-electron spectroscopy,XPS）检测方法研究InAs衬底化学机械抛光后经过不同湿法化学溶液联合作用后衬底表面的金属杂质残留浓度和氧化物组分的变化。湿法化学清洗后的InAs表面检测到金属杂质Si,K和Ca,它们的浓度随溶液组合的变化而变化。金属杂质残留浓度较高的InAs衬底表面同时也测得较多粒径为80 nm的颗粒。提出了一种行之有效的InAs衬底湿化学清洗方法,可制备出金属杂质残留少、颗粒少、氧化层薄InAs衬底表面,此表面有利于MOCVD方法生长高质量InAs/GaSb超晶格红外探测器外延。     

等离子体提纯硅粉的实验研究

本文阐述了等离子体工艺在硅粉提纯方面的应用，在真空条件下，利用ＨＣｌ或含氯气体化合物，经射频辉光放电形成等离子体与硅粉中的杂质反应，可以在较低的温度下（２００℃～４００℃）、较短的时间（１～２小时）内，除去硅粉中的大部分杂质，而且操作简单，功耗较低。     

扩散杂质分布对V—MOS,D—MOS器件的直流特性的影响

为了研究杂质分布对器件性能的影响模仿双扩散MCS（D—MOS）和V—沟道MOS（V—MOS）晶体管的结构,改变的工艺系数选用沟道长度了沟道掺杂值的范围。用两探测扩展电阻的方法来量测杂质的分布。以VMOS和DMOS器件的电学特性的比较来推示横向DMOS杂质分布的特性。发现一般的方法不能模拟器件的输出电导。实际上沟道长度的计算是在沟道漏结周围,方程的一维解。当测量杂质分布数据时,引进新的沟道长度计算方法,在沟道长度为0.6～um时,器件的输出电导能确的模拟。     

Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies

A multicrystalline silicon ingot with columnar and irregular grains was obtained from metallurgical-grade silicon (MG-Si) by directional solidification. The segregation behaviors of substitutional and interstitial impurities in different grain morphologies have been studied. The concentration distribution of substitutional impurities (B and Al) in the silicon ingot was accord with the Scheil's equation, which depended on the grain morphology. However, the concentration distribution of interstitial impurities (Fe, Ti, Cu, and Ni) was only accord with the Scheil's equation under the columnar grains growth condition. The difference lattice sites of the impurities will result in the disparate segregation behavior of impurities for columnar and irregular grains growth, which leads to the diverse concentration distribution of substitutional and interstitial impurities in the silicon ingot. Furthermore, the transport mechanism of interstitial and substitutional impurities in front of the solid-liquid interface boundary has been revealed.     

GaAs中4d过渡杂质Mo与Pd的光电行为

4d过渡杂质Mo、Pd在GaAs中分别引入E(0.42eV)、H(0.61eV)和E(0.66eV)、H(0.69eV)等能级。根据过渡杂质Mo和Pd在GaAs中的光电行为,推测这些杂质在GaAs中不起有效复合中心的作用。     

钽粉杂质含量对钽电容器性能的影响

根据国外两家钽粉生产厂提供的钽粉杂质含量资料，通过钽粉进厂复验和品质测试探索钽粉中的杂质含量对钽电容器的漏电流和击穿电压的影响。试验表明，五氧化二钽无定形介质膜的漏电流主要由杂质提供的载流子形成，钽电容器的击穿电压与杂质含量成反比关系。     

用固溶强化模型计算InP中等价电子杂质对位错的钉扎力

本文根据固溶强化模型,考虑了等价电子杂质在InP单晶中的溶解度以及掺入杂质与基质原子之间共价半径之差引起的弹性失配.计算了这些杂质在InP 中对位错的钉扎力可达10~9～10~(10)达因/厘米~2,从而很好地解释了等价电子杂质降低位错密度的作用.     

掺Cr,Ni对S在Fe(100)面吸附的第一性原理研究

基于密度泛函理论(DFT)的第一性原理方法,在广义梯度近似下计算了Fe中掺Cr或Ni时S原子在Fe(100)面吸附的结构和电子性质,并计算了其分子轨道和吸附能。结果表明:S原子均是吸附在H位最稳定;纯铁时S在Fe(100)面H位的吸附能为-7.70 eV,掺Ni时S原子在H位的吸附能为-7.35 eV,吸附能的相对变化为4.5%;掺Cr时S原子在H位的吸附能为-5.79 eV,吸附能相对纯铁时变化为24.8%,表明掺Cr对S原子在Fe表面的吸附抑制作用更大。对比分析了每种吸附情况下的分波态密度,结果发现掺Cr时具有较高的局域电子云重叠,从而产生的排斥作用抑制了S原子的吸附。     

Electronic interaction between impurities in the oxide film and the semiconductor substrate

Electronic interactions between impurities incorporated into the oxide film on silicon (or other semiconductors) and the semiconductor substrate are postulated. The impurities are presumed to change the Fermi level in the oxide, thus causing charge transfer between the oxide and the semiconductor surface. The anodic behavior ofN-type silicon contacting an electrolyte as a function of impurities incorporated into the oxide is suggested as experimental verification of this concept.     

熔石英亚表面杂质对激光损伤概率的影响

基于Mie理论和热传导方程,结合ICP-OES对熔石英亚表面杂质粒子的主要成分测量,建立了计算吸收性杂质粒子诱导熔石英光学元件表面损伤概率的模型。通过该模型理论研究了不同种类的杂质粒子诱导损伤所需的临界能量密度随粒子尺寸的变化,以及不同尺寸分布的杂质粒子诱导熔石英表面的损伤概率。通过损伤实验测试获得了不同光斑尺寸的355 nm激光辐照作用下熔石英表面的损伤概率,与理论计算结果进行对比,在相同粒子分布参数下,分析了三种杂质粒子对损伤概率的贡献（Cu Al CeO2）。通过该模型能够分析光学基底或薄膜亚表面中不同潜在的杂质吸收性粒子对光学元件损伤概率的影响。     

Modulating Blue Phosphorene by Synergetic Codoping: Indirect to Direct Gap Transition and Strong Bandgap Bowing

The structural and electronic properties of synergistically modified blue phosphorene (BP) is investigated. The inversion and threefold rotational symmetries of BP are broken. The codoping of group IV and VI impurities can turn monolayer BP into direct bandgap semiconductors. The underlying physical mechanism is that group IV and VI impurities tailor the valence band maximum and conduction band minimum, respectively, and move them to Γ. All the bandgaps of monolayer, nanoribbons, and quantum dots of BP can be modulated in a wide range, and the strong bandgap bowing is found. In addition, the Coulomb interactions between the screened impurities are revealed. Lower formation energies indicate the fabricating practicability of synergeticly modified BP. Spin–orbit coupling (SOC) can also be tuned by the introduction of impurities.     

MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities

正Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,pdoped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping capacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications.     

Getting to grips with light-atom impurities

The use of localized vibrational mode (LVM) absorption, a type of IR absorption, allows quantitative measurements of the concentration of light-atom impurities. Such impurities, e.g. H, N and C, are extremely difficult to measure using mass spectrometric techniques, particularly where concentrations are low. Here, Mike Brozel explains the mechanisms of LVM absorption and, using Si impurities in GaAs as an Example, shows the type of information that can be obtained.