Y2O3掺杂对(Bi0.5Na0.5)0.94Ba0.06TiO3无铅压电陶瓷性能的影响研究

采用传统固相反应法制备了Y2O3掺杂(Bi0.5Na0.5)0.94Ba0.06TiO3(简写为BNBT6)陶瓷[简称为BNBT6-x(wt%)Y2O3陶瓷].研究了Y2O3 (0.2wt%～0.8wt%)掺杂对BNBT6陶瓷的结构、介电、压电、铁电性能的影响.结果表明,所有Y2O3掺杂陶瓷样品均形成了单一的钙钛矿结构;陶瓷的介电、压电、铁电性能受Y2O3掺杂的影响较为显著:当掺杂0.4wt%Y2O3时,10 kHz频率下测得的室温εr达到1530,且tanδ较小,为0.050,d33达到152 pC/N,kp=0.27,Qm=134.掺杂0.2wt%的Y2O3时BNBT6陶瓷的d33为145 pC/N,kp增大到0.29,Qm达到173,tanδ为0.053;掺杂适量Y2O3的BNBT6陶瓷铁电性能也得到改善.     

Ba掺杂对Pb（Zr,Ti,Sb）O3压电陶瓷Curie温度与压电性能的影响

用传统固相法制备了组成为0.98Pb1.0–xBaxTi0.48Zr0.52O3–0.02PbSbO3(x=0.18～0.24)的Ba掺杂Pb(Zr,Ti,Sb)O3(PSZT)压电陶瓷。通过X射线衍射和Raman光谱研究了Ba掺杂PSZT陶瓷的结构,并测量和分析了Ba掺杂对PSZT压电陶瓷的Curie温度和压电性能的影响。结果表明:Ba掺杂影响PSZT陶瓷中四方相和三方相的转化过程、两相比例、晶粒大小并导致四方相的晶格畸变。随Ba含量(x)从0.18增加到0.24,PSZT陶瓷的Curie温度从189℃几乎线性下降到141℃;当Ba掺杂量为0.22时,PSZT陶瓷的Curie温度为156℃,压电应变常数d33为578pC/N,机电耦合系数Kp为0.63,机械品质因数Qm为37.3。     

Pb 1-xSrx(Mn1/3Sb2/3)aZrbTicO3三元系压电陶瓷的压电和介电性能

对Pb 1-xSrx(Mn1/3Sb2/3)aZrbTicO3+0.2%(质量分数)CeO2 (PMS-PZ-PT)三元系压电陶瓷的烧结温度(1 150～1 225 ℃)和Sr2+取代量(摩尔分数0～8%)进行了系统研究. 通过XRD图谱计算的晶格参数说明Sr2+取代Pb2+后, 晶胞更趋于各向同性且产生收缩, 从而改善样品的性能. 实验结果表明 当x=0.02时, 在1 200 ℃, 2 h条件下烧结, 能获得优良的综合性能εr =1 461, tanδ=0.003 8, Kp=0.63, Qm=1 321, d33=409×10-12 C·N-1, 可以满足超声马达和压电变压器等应用方面的要求.     

铈掺杂PZN-PZT三元系压电陶瓷的烧结特性研究

采用传统的固相反应法制备了掺杂0.2 wt.%CeO₂的0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.52Ti_0.48)O₃(0.3PZN-0.7PZT-0.2Ce)三元系压电陶瓷,并研究了烧结温度(1190～1260℃)对其相结构、微观形貌以及电学性能的影响。XRD和SEM分析发现:所有烧结样品均呈纯的钙钛矿相结构,随着烧结温度的升高,陶瓷样品的相结构从三方相逐渐转变为四方相,1230℃烧结得到的样品由三方相和四方相共存;当烧结温度高于1230℃过后,晶粒开始显著长大,直至液相始出现。介电温谱研究证实:随着烧结温度的升高,0.3PZN-0.7PZT-0.2Ce陶瓷的居里温度(Tc)逐渐升高而介电损耗因子(tan δ)逐渐降低,1230℃烧结得到的样品介电常数(ε_r)最大而温度系数(TK_ε)最小。压电性能以及谐振-反谐振测试表明:提高烧结温度有助于提升陶瓷的压电性能(d     

Pb(Zn,Nb)(Sn,Nb)(Zr,Ti)O3材料的介电性能研究

通过分析PZSN系材料的介电温度与介电频率曲线 ,发现PZSN系材料没有明确的相变温度 ,相变属弥散型相变。 12 5K与 4M处的介电频率峰对应O -Ti-O与O -Zr -O的偶极子的空间取向的响应行为 ,在顺电相T >Tcav时这种偶极子是不存在的 ,说明它们的行为与相变有关     

Cr2O3掺杂Pb(Mn1/3Sb2/3)0.05Zr0.47Ti0.48O3压电陶瓷的性质

探讨了Cr2O3掺杂对锑锰锆钛酸铅Pb（Mn1/3Sb2/3）0.05Zr0.47Ti0.48O3（简称PMSZT）压电陶瓷性能影响.通过X射线衍射,电子顺磁共振以及扫描电镜分析了PMSZT＋z Cr2O3（z=0.2%～0.8%,质量分数）陶瓷的相组成,元素价态以及显微结构.结果表明：合成温度900℃保温2 h后,可以得到钙钛矿结构.随着Cr2O3掺杂量的增大,四方相的含量减少,准同相界向三方相移动.掺杂Cr2O3的质量分数为0.6%时：相对介电常数εr=1 650,介电损耗tanδ=0.006,压电常数d33=328 pC/N,机电耦合系数Kp=0.63,机械品质因数Qm=2 300,电性能优于Cr2O3掺杂量为0.2%,0.4%,0.8%的样品,但比未掺杂时的稍差.随着Cr2O3掺杂量的增加,PMSZT陶瓷的Curie温度降低,谐振频率变化率随温度变化由正变负.     

Na0.5K0.44Li0.06Nb0.94Sb0.06O3无铅压电陶瓷的制备与性能研究

采用传统固相烧结法制备Na0.5 K0.44 Li0.06 Nb0.94 Sb0.06 O3无铅压电陶瓷,研究了烧结温度对陶瓷样品微观结构及电学性能的影响.研究结果表明:烧结温度在1020～1100℃范围内,样品均形成了单一的正交相钙钛矿结构,烧结温度对微观形貌和电学性能有较大影响;与纯KNN陶瓷相比,陶瓷的To-t和Tc均向低温方向移动;当烧结温度为1080℃时晶粒发育比较完全,To-t和Tc分别为45℃和345℃,同时表现出优异的电学性能:d33=200 pC/N,kp=0.365,tanδ=4.67％.     

LixNa(0.52-x)K0.48NbO3无铅压电陶瓷性能研究

采用普通的固相烧结方法制备了LixNa(0.52-x)K0.48NbO3无铅压电陶瓷,研究了陶瓷的显微结构及压电性能。随着Li含量的增加陶瓷烧结温度降低,相结构逐渐由正交相向四方相转变。在x=0.05时,压电常数d33达到117pc/N,平面机电耦合系数kp为36.4%,介电损耗tanδ为0.032。     

锰掺杂对压电陶瓷介电性能的影响

采用传统的电子陶瓷工艺制备了高性能四元系压电陶瓷（PZN-PMS-PZT）。考察了不同剂量锰掺杂对压电陶瓷的室温介电常数（εTr)，介电常数温度谱以及居里温度（Tc)的影响。实验结果表明：随着Mn含量的增加，压电陶瓷的室温介电常数εTr减小；由于内偏置场的影响，居里温度Tc随锰含量的增加而增加。     

K_(0.5)Na_(0.5)NbO_3-La_2O_3无铅压电陶瓷性能的研究

采用传统周相反应法制备了K0.5Na0.5NbO3-xmol%La2O3(简称KNN-xLa)系列无铅压电陶瓷,研究了不同La2O3含量(x=0.0,0.05,0.15,0.25,0.35,0.5,1.0)样品的物相组成、显微结构、压电及介电性能.实验结果表明:La2O3的加入并没有改变陶瓷的相结构,体系仍为单一正交相钙钛矿结构.随着掺杂量x的增大样品的压电系数(d33)、机械品质因子(Qm)、平面机电耦合系数(kp)和样品密度(P)都呈现先增大后减少的变化趋势,而介质损耗(tan δ)呈现先变小后增大的变化趋势,烧成温度则随着x的增大而升高.当x=0.15时,材料的综合性能达到最佳,其中P=4.52 g/cm3,d33=120pC/N,Qm=130,kp=0.41,tan δ=0.021.此外,随着x的增大,居里温度Tc则呈现出先升高后降低的趋势,而正交相向四方相的转变温度To-t与Tc变化相反,且当x=0.15时,To-t=189℃,Tc=404℃.     

Structural and Physical Properties of Nd-Doped Pb(Zr0.52Ti0.48)O3 Ceramics

Lead zirconate titanate (PZT) ceramics (Zr/Ti = 52/48) have been modified with different quantities of neodymium oxide (Nd₂O₃). The preparation was carried out via the solid-state-reaction route. The samples were calcined and sintered at 850°C and 1200°C, respectively. The structural evolution and the microstructure were investigated using an X-ray diffractometer (XRD) and a scanning electron microscope (SEM), respectively. The physical properties such as dielectric constants, piezoelectric coefficients, density etc. were also studied.     

用两步烧结法制备（K0.48-xNa0.52）（Nb0.93-xSb0.07）O3-xLiTaO3无铅压电陶瓷

用传统固相法制备（K0.48-xNa0.52）（Nb0.93-xSb0.07）O3-xLiTaO3体系无铅压电陶瓷,X射线衍射物相分析结果表明：该体系陶瓷正交一四方转变的准同型相界位于0．035〈x〈0．04,在室温具有较高的压电性能。用传统烧结方法很难得到致密的压电陶瓷,用两步烧结工艺可以得到致密化且晶粒尺寸均一的陶...     

Combustion synthesis and electromagnetic properties of nanocrystalline Pb(Zr0.52Ti0.48)O3

The properties of nanocrystalline lead zirconate titanate [PZT, Pb(Zr_0.52Ti_0.48)O₃] thick films and pellets synthesized by self-propagating auto combustion route using sucrose as a fuel are reported. The X-ray diffraction reveals the formation of nanocrystalline tetragonal PZT having a particle size of 5.52 nm in thick films and 7.08 nm in bulk material. SEM images show the grain size of 300–400 nm with some agglomeration, as well as modified open grain boundaries and grain growth in the PZT thick film as compared to the bulk material. The DC electric resistivity of PZT shows semiconducting behavior. We also characterized the 8–18 GHz microwave insertion loss, absorption, complex permittivity, and microwave conductivity of synthesized materials. The real part of permittivity and dielectric loss were found to decrease with increasing frequency.     

Microstructure and electric properties of Pr-doped Pb(Zr0.52Ti0.48)O3 ceramics

Improving the piezoelectric activity of lead zirconate titanate (PZT) ceramics is of great importance for practical applications. In this study, the influence of Pr³⁺ doping on the ferroelectric phase composition, microstructure, and electric properties on the A-site of (Pb_1-1.5xPr_x)(Zr_0.52Ti_0.48)O₃ is extensively investigated. A dense and fine microstructural sample is obtained with the introduction of Pr³⁺. The results show that the morphotropic phase boundary (MPB) moves to the rhombohedral phase region. The rhombohedral and tetragonal phases exhibit an ideal coexistence in the 4 mol.% Pr³⁺ doped (PPZT4) samples. Lead vacancy and the reduction of the potential energy barrier are considered to be the key mechanisms for donor doping, which is upheld by the Pr³⁺ doping. Combining the I-E hysteresis loops with the P-E hysteresis loops, it becomes apparent that both contribution maximums of the domain switching and residual polarisation are in PPZT4. Moreover, the thermal aging resistance of PZT is improved by doping, and the temperature stability is optimised from 83% in PZT to 96% in PPZT4. Hence, an appropriate amount of Pr³⁺ doping can effectively improve the piezoelectric activity of PZT ceramics in the MPB area and optimise the performance stability of the material under application temperatures.     

Study of Pb(Zr0.52Ti0.48)O3 microelectromechanical system piezoelectric accelerometers for health monitoring of mechanical motors

In this study, piezoelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films were fabricated on Pt-coated Si substrates by a modified sol-gel method via dispersing the piezoelectric submicron powders of composition (Pb, Sr)La_x(Ti, Zr)_1−1/4xO₃ (PZT-5A, having a high d₃₃ value of 520 and a high k_p value of 0.64) in the PZT sol-gel solution. Then, piezoelectric microelectromechanical system (MEMS) accelerometers were designed and fabricated on Si substrates via micromachining techniques. A mathematic approximation model was firstly proposed. It used an effective thickness of Si membrane (h_eff) to replace the thickness of Si membrane, derived by math theory. The resonant frequency using the mathematic approximation model would be closer to the values of the experimental data than using the original math theory. Finally, the self-made thick film accelerometers with best properties were fabricated via a modified sol-gel method. They had voltage sensitivities in the range of 2.21-2.14 mV/g, which is pretty high compared with the reported data, and the resonant frequency is in the range of 6.5-7.1 kHz. In addition, the accelerometers with amplifier circuit and power source were practically used in vibration detection of health monitoring of mechanical motors.     

Preparation of ferroelectric Pb(Zr0.52 Ti0.48)O3 thin films by sol-gel processing

Ferroelectric Pb(Zr_0.52 Ti_0.48)O₃ thin films were prepared by sol-gel processing on the Pt/Ti/SiO₂/Si(100) substrates. Effects of the concentration (0.2–0.8 M) of the starting solution (Pb/Zr/Ti= 1.1/0.52/0.48) and the sintering temperature (500–700 ‡C) on crystallinity, microstructure and electrical properties of PZT thin films were investigated. For the thin film prepared at 0.4 M starting solution, the highest crystallinity appeared at a sintering temperature of 650 ‡C. The average grain size of the PZT thin films was about 0.17 Μm. The film thickness was about 0.2 Μm. The relative dielectric constant and the dissipation factor of the film measured at 1 kHz were about 750 and 4.3%, respectively. The remnant polarization (Pr) and coercive field (Ec) of the film measured at the applied voltage of 5 V were about 49 ΜC/cm² and 134 kV/cm, respectively.     

激励方式对锆钛酸铅钡锶压电陶瓷介电性能的影响

采用扎膜工艺和固相反应法制备了(Pb0.70Ba0.26Sr0.04)(Zr0.52Ti0.48)O3(PBSZT)压电陶瓷。通过扫描电子显微镜和X射线衍射表征PBSZT陶瓷的结构和物相组成,用电容介损测试仪表征压电陶瓷的介电性能与激励场强,通过自建电路集成直流电源、标准电容,在低频频率特性测试仪上得到偏场强度对压电陶瓷介电性能的影响关系。结果表明:压电陶瓷材料的介电性能随着加载的电场强度的增大先逐渐升高,而后出现拐点开始降低;在偏压电场中,自由电容CT随正向偏场强度的增加逐渐减小,但随着反向偏场强度的增加逐渐增大。tanδ则随着正、反偏场强度的增加均呈现上升;压电陶瓷的机电耦合系数kp与偏场强度的关系是以0点为界,随着负偏场增强,kp略显下降,反之,随正偏场增强,kp缓慢增大。因此,压电陶瓷应用时应避开强场损耗高点;并在环境中施加正向偏场,有助于抑制压电陶瓷性能衰减。     

Electrical characteristics of Pb0.92La0.08(Zr0.52Ti0.48)O3/YBa2Cu3O7-x heterostructures

Pb_0.92La_0.08(Zr_0.52Ti_0.48)O₃/YBa₂Cu₃O_7-x(PLZT/YBCO) heterostructures with high c-axis epitaxial properties were prepared by PLD method. Hysteresis loops, photovoltaic effects, and current transfer properties of this structure were investigated. Hysteresis loop test results showed that residual polarization intensity of PLZT gradually decreases with decreasing temperature but coercivity field increases. I–V curve of PLZT/YBCO heterostructure in dark state was tested and found to have significant rectification characteristics, indicating the existence of potential barrier at interface of the heterostructure. UV illumination experiments showed that PLZT/YBCO heterostructure has clear photovoltaic effect, with both photovoltage and photocurrent decreasing as the temperature is decreased. Moreover, photovoltage and photocurrent display jump phenomenon when superconducting transition of YBCO occurs. Further analysis of jump phenomenon revealed that the difference of photovoltage with temperature before and after superconducting transition of YBCO is consistent with superconducting energy bandgap of YBCO. The opening of superconducting energy gap of YBCO lowers PLZT/YBCO interfacial potential barrier and promotes migration of photogenerated carriers, consequently increasing photovoltage and photocurrent. This work describes novel method to measure superconducting energy gap.     

Residual stress and electrical properties of Pb(Zr0.52,Ti0.48)O3 thin films RF sputtered directly on Cu foils

Polycrystalline Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films between 250 and 1000 nm thick were deposited on Cu foils via RF magnetron sputtering. Samples were crystallized ex situ between 550°C and 750°C in a low oxygen partial pressure atmosphere, pO₂, in order to avoid oxidation of the substrate. These were compared to films made on more common Pt/TiO_x/SiO₂/Si substrates also crystallized under low pO₂ conditions. The mismatch of the coefficients of thermal expansion for Cu and PZT caused large compressive residual stresses to develop in the films, whereas films on Pt‐Si experienced more moderate tensile stresses. Stress was measured using the sin²ψ method. In addition to mechanical implications, i.e., film cracking and delamination, the effect of residual stress on electrical properties is discussed. Dielectric constants of PZT were lower on Cu than on Pt/TiO_x/SiO₂/Si. This could be due either to a dead layer effect or to the residual stress imposed by the substrate. The remanent polarizations for films on Cu were between 18 and 41 μC/cm², while coercive fields were between 37 and 54kV/cm. Rayleigh analysis was used to describe the role of defects affecting domain wall mobility, as they act as pinning centers and decrease the extrinsic polarization response.     

Effect of SrRuO3 layer thickness on electrical properties of Pb(Zr0.52Ti0.48)O3/SrRuO3 superlattices

Artificial ferroelectric superlattices have received considerable attention because of the potential to realize macro-performance adjustments and bring exotic phenomena. In recent years, it has been reported that metallic SrRuO₃ with single-unit-cell thickness can be used as the constituent material of ferroelectric superlattices, but the effect of SrRuO₃ thickness on ferroelectric properties is not clear. In this study, Pb(Zr_0.52Ti_0.48)O₃/SrRuO₃ (PZT/SRO) ferroelectric/metallic superlattices with the thickness of SRO layers ranging from 1 to 3 unit cells have been grown on Nb:SrTiO₃ substrates by pulsed laser deposition (PLD), and their structural and electrical properties are investigated. The experimental results show that the electrical properties of the PZT/SRO superlattices are greatly affected by the thickness of SRO layers, and the PZT₁₀/SRO₂ superlattice possesses the best electrical properties. The X-ray photoelectron spectroscopy (XPS) results show that oxygen vacancies are accumulated at the PZT/SRO interfaces, which can reduce the depolarization fields and the leakage current. The results demonstrate that the thickness of metallic conductive oxide in the ferroelectric/metallic superlattices is a key factor affecting their ferroelectric properties.