基于AI智能关联技术的5G网络切片研究与实现

为解决传统通信运营商业务集中统一规则部署,业务无法灵活差异化定制以适应5G To B垂直行业多样化业务需求的问题,提出了一种基于AI智能关联算法的5G网络切片现网实现方案。首先借助对5G多域多接口数据采集形成数据分析基础,从不同垂直行业客户SLA需求给出网络切片的模型选择;然后借助二分K均值聚类AI算法寻找业务流在各环节的最佳切片参数,指导运营商为垂直行业客户提供端到端最优切片参数集;最后基于该算法给出了现网热门的5G应用如8K视频、高清在线游戏运用智能AI算法后的切片效率及性能质量的对比,为运营商5G网络切片技术在现网的应用实践提供参考。     

AI在5G行业专网的应用场景和使能技术

行业专网是5G网络的重要组成部分,电信运营商通过AI与行业专网应用场景结合实现业务SLA保障和网络优化。面向数字化、智能化的新一代行业专网发展目标,基于行业用户的体验保障和网络安全需求探讨了AI在5G行业专网典型应用场景,分析了基于AI的5G行业专网应用的关键使能技术,包括算力网络、自适应优化AI算法、意图驱动的网络织造、原生多主体群等,构建自适应持续进化的行业专网,为5G行业专网的智能化提供了有效、可行的实现方法。     

5G-A空天地融合核心网方案及关键技术

5G Advanced将融合地面基站、中高空飞行器、卫星等各类网络节点,实现全球无缝地理覆盖。在运营商网络中,NTN作为新的接入类型和回传类型,需要考虑融合协同问题。提出了空天地融合核心网方案,分析了业务SLA保障和QoS控制增强、基于AI的用户面策略、智能算网协同调度、卫星非连续覆盖等待定时器及自适应智能化运维和管理等关键技术,为空天地融合核心网实现网络动态协同提供了有效、可行的实现方法。     

基于新型互联网交换中心的跨运营商5G+V2X车联网技术研究

车联网是5G网络的典型应用，两者的有机结合也是新基建战略的重要实践。针对车联网规模推广后跨运营商网络路由绕转、时延大、质量不可靠、建设成本高等问题，本文首先提出基于新型互联网交换中心的跨运营商5G+V2X技术方案，结合NFV、SDN智能化虚拟化网络、边缘计算、C-V2X、5G网络切片、人工智能AI等技术，以及蜂群智能、进化算法、模糊逻辑、机器学习算法，探索5G网络环境下跨运营商场景智能网联单位间的信息高效、高质量传递方案，在跨运营商5G+车联网场景下有巨大的应用前景。     

中国电信张成良 电信领域是最大的AI细分市场

AI可助力运营商实现复杂的网络运维自动优化。中国电信将积极探索引入AI技术的各类应用场景,实现AI能力的沉淀和客户赋能。5G时代的到来让万物智联成为可能。5G是人工智能的加速器,同时也将为人工智能提供新动能。尤其对运营商而言,将网络与AI结合,可以满足5G网络的部署运营需求。     

5G MEC边缘智能架构研究

作为边缘计算与人工智能融合驱动的新模式,边缘智能已然渗透到各个行业。5G MEC作为运营商新型网络边缘的锚点,需要借助边缘智能来充分释放网络边缘价值。文章初步探讨网络边缘智能化需求,提出一种基于5G MEC的边缘智能优化架构,扩展了面向异构计算的弹性AI加速服务和自适应云边智能协同调度能力,从而实现了MEC平台运营智能化和AI能力服务化。     

基于AI的4G/5G基站协同节电方法研究与应用

本文提出基于AI的4G/5G基站协同节电方法以AI技术为突破口,构建重叠覆盖拓扑结构,研究重叠覆盖核心算法,建立业务长时和短时预测深度学习算法,精细化分析网络业务负荷潮汐效应时段,输出智能节电策略,通过系统自动编辑下发休眠和唤醒指令,在保证网络覆盖和客户业务体验情况下,实现业务闲时4G/5G协同的智能节电,达到移动通信网络整体节能减排效果。     

5G MEC行业应用部署方案研究

多接入边缘计算(MEC)是5G演进的关键技术之一.作为运营商面向2B市场发展的关键抓手,5G MEC可以在靠近行业用户的移动网络边缘提供网络能力.主要介绍了5G MEC的网络特点与行业应用,分析5G MEC的网络能力、网络分流方案与安全方案.     

5G多频协同组网策略研究

打造领先的5G精品网络是运营商的终极目标。面向未来,5G无线网络发展的焦点逐渐从以流量为中心转向以业务为中心。文章通过5G立体组网策略的研究,开展5G精品网络多频协同规划,协同建设和协同优化,最大化提升频谱价值,提升5G网络覆盖能力,支撑5G高品质网络质量建设。     

省地协同的5G电力虚拟专网规模应用及自服务管理

为应对当前5G规模化应用建设过程中，亟待解决集约化管理、业务灵活接入、终端自主管控以及降低5G应用成本的实际问题，以广东电网公司5G规模化推广应用为例，从网络、终端、管理、应用4个方面开展基于省地协同的5G电力虚拟专网规模应用及自服务管理模式的研究。针对国内多运营商网络部署特点和不同地市电力业务差异化需求，提出了省地协同的5G电力虚拟专网部署架构。针对电力业务特点，提出两类定制化融合5G的智能终端，实现5G与电力异构组网通信。在面向电力业务的支撑和管理方面，设计了一种面向5G自服务的电力业务支撑系统，实现对5G网络切片、5G电力卡以及5G终端设备的实时管控。最后，对所研成果系统性规模化应用的效果进行了详细阐述。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.