Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

The growth and thermal conductivity of InAs quantum dot (QD) stacks embedded in GaInAs matrix with AlAs compensating layers deposited on (1 1 3)B InP substrate are presented. The effect of the strain compensating AlAs layer is demonstrated through Atomic Force Microscopy (AFM) and X-ray diffraction structural analysis. The thermal conductivity (2.7 W/m K at 300 K) measured by the 3ω method reveals to be clearly reduced in comparison with a bulk InGaAs layer (5 W/m K). In addition, the thermal conductivity measurements of S doped InP substrates and the SiN insulating layer used in the 3ω method in the 20–200 °C range are also presented. An empirical law is proposed for the S doped InP substrate, which slightly differs from previously presented results.     

Thermal conductivity of Cu-4.5 Ti alloy

The thermal conductivity (TC) of peak aged Cu-4.5 wt% Ti alloy was measured at different temperatures and studied its variation with temperature. It was found that TC increased with increasing temperature. Phonon and electronic components of thermal conductivity were computed from the results. The alloy exhibits an electronic thermal conductivity of 46.45 W/m.K at room temperature. The phonon thermal conductivity decreased with increasing temperature from 17.6 at 0 K to 1.75 W/m.K at 298 K, which agrees with literature that the phonon component of thermal conductivity is insignificant at room temperature.     

Thermal Transport in BPSCCO System Between 20 and 170 K

Thermal conductivity of superconducting (Bi,Pb)2223 pellet in the temperature range 20–170 K is reported. Electronic contribution to thermal conductivity in the normal state is estimated to be 25%. Considering both phonon and phonon + electron approach, we attempted to examine the observed nature of the temperature dependence of thermal conductivity. Our analysis strongly supports the role of phonons as well as electrons in the origin of the thermal conductivity peak in the superconducting state. Some of the microscopic quantities evaluated from the best-fit parameters obtained from phonon + electron approach give reasonable values.     

Optical and microstructural investigations of porous silicon

Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystalline silicon (c-Si) and porous silicon (PS) samples were carried out. PS samples were prepared by anodic etching of c-Si under the illumination of light for different etching times of 30, 60 and 90 min. Raman scattering from the optical phonon in PS showed the redshift of the phonon frequency, broadening and increased asymmetry of the Raman mode on increasing the etching time. Using the phonon confinement model, the average diameter of Si nanocrystallites has been estimated as 2.9, 2.6 and 2.3 nm for 30, 60 and 90 min samples, respectively. Similar size of Si crystallites has been confirmed from the high resolution transmission electron microscopy (HRTEM). Using 2TO phonon mode intensity, we conjectured that the disordered Si region around the pores present in 30 min PS dissolved on etching for 90 min. The photoluminescence (PL) from PS increased in intensity and blue shifted with etching time from 2.1–2.3 eV. Blue shifting of PL is consistent with quantum confinement of electron in Si nanocrystallites and their sizes are estimated as 2.4, 2.3 and 2.1 nm for 30, 60 and 90 min PS, respectively which are smaller than the Raman estimated sizes due to temperature effect. Unambiguous dominance of quantum confinement effect is reported in these PS samples.     

Temperature-Dependent Thermal Conductivity of Undoped Polycrystalline Silicon Layers

Polycrystalline silicon is used in microelectronic and microelectromechanical devices for which thermal design is important. This work measures the in-plane thermal conductivities of free-standing undoped polycrystalline layers between 20 and 300 K. The layers have a thickness of 1 m, and the measurements are performed using steady-state Joule heating and electrical-resistance thermometry in patterned aluminum microbridges. The layer thermal conductivities are found to depend strongly on the details of the deposition process through the grain size distribution, which is investigated using atomic force microscopy and transmission electron microscopy. The room-temperature thermal conductivity of as-grown polycrystalline silicon is found to be 13.8 W·m^-1·K^-1and that of amorphous recrystallized polycrystalline silicon is 22 W·m^-1·K^-1, which is almost an order of magnitude less than that of single-crystal silicon. The maximum thermal conductivities of both samples occur at higher temperatures than in pure single-crystalline silicon layers of the same thickness. The data are interpreted using the approximate solution to the Boltzmann transport equation in the relaxation time approximation together with Matthiessen's rule. These measurements contribute to the understanding of the relative importance of phonon scattering on grain and layer boundaries in polysilicon films and provide data relevant for the design of micromachined structures.     

InP量子点的掺杂及其光学性能

采用原位成核掺杂法合成了Li、Zn金属离子掺杂的InP量子点(分别记为Li: InP和Zn: InP), 并研究了掺杂剂对量子点的结构、尺寸和光学性能的影响。研究结果表明, Li⁺、Zn²⁺掺杂的InP量子点结晶度较高且尺寸均匀。虽然Li⁺掺杂未引起InP量子点的结构发生变化, Li⁺未进入InP晶格, 但是抑制了InP量子点的成核与长大, 使其吸收谱和荧光谱均发生大幅度的蓝移。Zn掺杂同样也抑制InP量子点的成核与长大, 并且形成InP/Zn₃P₂/ZnO复合核壳结构, 显著增强了InP量子点的荧光, 尤其是当Zn掺杂浓度(Zn/In原子比)为0.2时, InP量子点的荧光强度增加近100多倍, 这对短波长InP量子点的合成具有一定的参考价值。     

NZP陶瓷的导热系数研究

测定了NZP陶瓷中CZP、CM、CMS三种组成的导热系数随温度的变化,计算了三种组成的声子平均自由程,认为复杂的结构与组成是NZP陶瓷导热系数小的主要原因．     

Measurements of Thermal Conductivity and Thermal Diffusivity of CVD Diamond

The thermal conductivity of natural, gem-quality diamond, which can be as high as 2500 Wm^–1 K^–1 at 25°C, is the highest of any known material. Synthetic diamond grown by chemical vapor deposition (CVD) of films up to 1 mm thick exhibits generally lower values of but under optimal growth conditions it can rival gem-quality diamond with values up to 2200 Wm^–1 K^–1. However, it is polycrystalline and exhibits a columnar microstructure. Measurements on free-standing CVD diamond, with a thickness in the range 25–400 m, reveal a strong gradient in thermal conductivity as a function of position z from the substrate surface as well as a pronounced anisotropy with respect to z. The temperature dependence of in the range 4 to 400 K has been analyzed to determine the types and numbers of phonon scattering centers as a function of z. The defect structure, and therefore the thermal conductivity, are both correlated with the microstructure. Because of the high conductivity of diamond, these samples are thermally thin. For example, laser flash data for a 25-m-thick diamond sample is expected to be virtually the same as laser flash data for a 1-m-thick fused silica sample. Several of the techniques described here for diamond are therefore applicable to much thinner samples of more ordinary material.     

Hydrogen isotopic substitution experiments in nanostructured porous silicon

Nanostructured porous silicon is usually prepared by electrochemical anodization of monocrystalline silicon using a fluorine-rich electrolyte. As a result of this process, the silicon atoms conserve their original crystalline location, and many of the dangling bonds appearing on the surface of the nanostructure are saturated by hydrogen coming from the electrolyte. This work presents an IR study of the effects produced by partial substitution of water in the electrolytic solution by deuterium oxide. The isotopic effects on the IR spectra are analyzed for the as-prepared samples and for the samples subjected to partial thermal effusion of hydrogen and deuterium. We demonstrate that, although deuterium is chemically indistinguishable from hydrogen, it presents a singular behaviour when used in porous silicon preparation. We found that deuterium preferentially bonds forming Si-DH groups. A possible explanation of the phenomenon is presented, based on the different diffusivities of hydrogen and deuterium.     

纳米氧化钇稳定氧化锆/钛酸锶复合热电材料的热导率研究

通过添加纳米尺度的低热导率添加剂YSZ,形成钛酸锶复合热电材料,研究发现,虽然电子热导率有明显提高,但声子热导率降低得更加明显,进而导致总热导率显著下降。声子热导率的降低主要是因为纳米YSZ在钛酸锶体材料中弥散分布,声子在纳米YSZ与钛酸锶界面处被大量散射,导致声子平均自由程明显降低,进而导致声子热导率明显降低。     

氮化物对增强线性酚醛树脂导热性能的对比研究

目的对比探讨氮化物陶瓷颗粒AlN和BN对热塑性酚醛树脂复合材料导热率的影响,制备高导热复合材料,并将其应用于电子塑封领域。方法首先,采用硅烷偶联剂对AlN和BN进行表面改性,以增强其在有机聚合物中的分散性。然后通过在线性酚醛树脂中添加不同粒径的陶瓷颗粒,对比粒径及填料含量对线性酚醛树脂复合材料导热率的影响,从声子角度分析,获取适合作为提高复合材料导热性能的填料。结果经过硅烷偶联剂表面改性后,陶瓷颗粒AlN、BN与水的接触角变大,与树脂的接触角变小,能够更好地分散在线性酚醛树脂中。在线性酚醛树脂中添加不同粒径、不同含量的AlN和BN,发现在不同含量范围内,填料粒径对复合材料导热率的影响不同。根据声子传递热量理论分析,BN较AlN在与C形成的界面上更容易传输热量,从而实现了较高的导热率。结论氮化物陶瓷颗粒能够很好地增强复合材料的导热率,尤其是BN,其态密度和C的态密度重叠率极高,更适合在BN与C的界面快速传递热量。     

Thermal Diffusivity Measurements of Liquid Silicate Melts

The effect of structure on the thermal diffusivities/conductivities for liquid silicates have been summarized based on recent experimental work carried out by the Royal Institute of Technology, Stockholm and the Tokyo Institute of Technology using the laser-flash and the hot-wire methods, respectively. In the former case, the effective thermal diffusivity was measured by a three-layer method. The relationship proposed by Mills that the thermal conductivity of silicates increases with a decrease in the ratio of NBO/T (number of non-bridging oxygens per tetrahedrally coordinated atom) has been well supported by the effective thermal diffusivity data for the liquid CaO-Al₂O₃-SiO₂ slags. However, it has been shown that for the slags having a higher CaO/Al₂O₃ ratio, the effective thermal diffusivity is roughly constant independent of the ratios of NBO/T. It has been concluded that when the silicate network is largely broken down, the phonon mean free path is not affected by the structure. It has been found by the hot-wire method that the magnitudes of thermal resistivity are in the hierarchy Li₂O-SiO₂2O-SiO₂2O-SiO₂ despite their similar values of NBO/T. It has been concluded that the ionicity of non-bridging oxygen ions is also a factor controlling the thermal conductivity of silicates as well as the number of broken bridges in the silicate network. The effective thermal diffusivity was measured for the CaO-Al₂O₃-SiO₂-FeO system to elucidate the radiation contribution to the effective thermal diffusivity. It has been found that the effective thermal diffusivity increases with an increase in FeO content. It can be considered that the strong absorption and emission within the liquid slag films caused by the Fe²⁺ ions enhances the photon heat transfer.     

Thermal conductivity of CVD diamond films

Diamond films 60 and 170 µm in thickness were grown by PACVD (plasma-assisted chemical vapor deposition) under similar conditions. The thermal diffusivity of these freestanding films was measured between 100 and 300 K using AC calorimetry. Radiation heat loss from the surface was estimated by analyzing both the amplitude and the phase shift of a lock-in amplifier signal. Thermal conductivity was calculated using the specific heat data of natural diamond. At room temperature, the thermal conductivity of the 60 and 170 m films is 9 and 16 W-cm^–1. K^–1 respectively, which is 40–70% that of natural diamond, The temperature dependence of thermal conductivity of the CVD diamond films is similar to that of natural diamond, Phonon scattering processes are considered using the Debye model, The microsize of the grain boundary has a significant effect on the mean free path of phonons at low temperatures. The grain in CVD diamond film is grown as a columnar structure, Thus, the thicker film has the larger mean grain size and the higher thermal conductivity. Scanning electron microscopy (SEM) and Raman spectroscopy were used to study the microstructure of the CVD diamond films. In this experiment, we evaluated the quality of CVD diamond film of the whole sample by measuring the thermal conductivity.Paper presented at the Twelfth Symposium on Thermophysical Properties, June 19–24, 1994, Boulder, Colorado, U.S.A.     

On the Optical,Thermal, and Vibrational Properties of Nano-ZnO:Mn,A Diluted Magnetic Semiconductor

Nano-zinc oxide and Mn-doped zinc oxide were synthesized by a chemical process, and the average size of the particles observed was 35 nm for nano-ZnO. Optical and thermal characterizations were carried out by means of photoluminescence and photoacoustic spectroscopy. It was found that nano-ZnO has a thermal diffusivity one order of magnitude larger than bulk ZnO. Similarly, a less explored localized defect mode in ZnO:Mn was studied theoretically and experimentally using FTIR spectroscopy. The localized mode was experimentally found to be 514cm⁻¹, compared to its theoretical value of 502cm⁻¹. These values suggest that the current theory of bulk materials can also be extended to nanosystems and they are consistent with our hypothesis that Mn goes substitutionally as an impurity displacing Zn in nano-ZnO.      

Optimization of growth of InGaAs/InP quantum wells using photoluminescence and secondary ion mass spectrometry

InGaAs/InP quantum wells of widths varying from 19 Å to 150 Å have been grown by MOVPE and the growth temperature optimized using photoluminescence and SIMS. It was thus found that for a 78 Å well the lowest PL linewidth of 12.7 meV at 12 K was obtained for growth at 625°C. SIMS also showed sharpest interfaces for this temperature compared with growth at 610°C and 640°C. The well widths determined from PL energies were in good agreement with a growth rate of 8.25 Å/s. However, while the barrier widths of 150 Å were in agreement with SIMS results, the well widths from SIMS were found to be much larger, due to a lower sputtering rate of InGaAs compared with InP. Quantitative comparison was made assuming the presence of InAsP and InGaAsP interface layers on either side of the wells and the relative sputtering rates determined.     

Determination of the Thermal Diffusivity of Edible Films

One of the most important factors in the preparation of edible films regards the choice of ingredients. Edible films are commonly prepared with single or mixed high-molecular-weight compounds like proteins and gums. In the present work, protein and gum-based edible films were prepared and their thermal diffusivity determined by photoacoustics. The films were prepared with different concentrations of four basic ingredients: whey protein concentrate, mesquite gum, sodium alginate, and -carrageenan. In single-component films, the highest thermal diffusivity was found in mesquite gum (1.97×10^–7m²s^–1), followed by sodium alginate, whey protein concentrate, and -carrageenan samples. In composed films, the highest thermal diffusivity was obtained in a ternary film made of mesquite gum, whey protein concentrate, and sodium alginate in identical parts (5.20×10^–7m²s^–1).     

Mechanisms of formation and topological analysis of porous silicon — computational modeling

Porous silicon formation under anodization in HF solution is studied by means of computer simulation, using the model, which takes into account the Si dissolution, thermal generation, diffusion and drift of holes and quantum confinement. Structures of porous layer, obtained in computational experiments at various doping level of initial Si, temperatures, HF concentrations, anode current densities, are shown and analyzed. The porosity and fractal dimension of the obtained porous structures are also analyzed.     

Tailoring the Thermal and Mechanical Properties of Graphene Film by Structural Engineering

Due to substantial phonon scattering induced by various structural defects, the in‐plane thermal conductivity (K) of graphene films (GFs) is still inferior to the commercial pyrolytic graphite sheet (PGS). Here, the problem is solved by engineering the structures of GFs in the aspects of grain size, film alignment, and thickness, and interlayer binding energy. The maximum K of GFs reaches to 3200 W m^?1 K^?1 and outperforms PGS by 60%. The superior K of GFs is strongly related to its large and intact grains, which are over four times larger than the best PGS. The large smooth features about 11 µm and good layer alignment of GFs also benefit on reducing phonon scattering induced by wrinkles/defects. In addition, the presence of substantial turbostratic‐stacking graphene is found up to 37% in thin GFs. The lacking of order in turbostratic‐stacking graphene leads to very weak interlayer binding energy, which can significantly decrease the phonon interfacial scattering. The GFs also demonstrate excellent flexibility and high tensile strength, which is about three times higher than PGS. Therefore, GFs with optimized structures and properties show great potentials in thermal management of form‐factor‐driven electronics and other high‐power‐driven systems.     

硅薄膜导热系数微尺度效应的临界尺寸

基于灰介质假设及拟合的色散关系,采用蒙特卡洛方法对微纳米硅薄膜内的声子热输运特性进行了模拟.将3μm厚的硅薄膜导热系数的计算结果与文献结果进行了对比,二者吻合较好.分析了厚度对薄膜内温度场及导热系数的影响.结果表明,当厚度小于某一尺度时,薄膜导热系数会随着厚度的减小而降低,呈现尺度效应;薄膜内温度场也不再是线性分布,而是在边界处呈现阶跃特性,且随着厚度减小,温度阶跃增大.基于该方法求得了100~400 K温度区间内,硅薄膜法向导热系数出现明显尺度效应的临界尺寸.计算发现,随着温度的升高,临界尺寸变化范围很大,平均温度为100 K时,临界尺寸约为50μm,平均温度为400 K时,临界尺寸约为2.5μm,前后相差了一个数量级.