Mg4(Ta1-xVx)2O9陶瓷的烧结特性和微波介电性能

用固相法制备了一系列Mg4(Ta1-xVx)2O9(MTV)陶瓷,研究了V5 取代Ta5 、MTV陶瓷的烧结特性和微波介电性能.用XRD和SEM研究其晶体结构和微观形貌.结果表明:在组分x≤0.3范围内形成了Mg4(Ta1-xVx)2O9连续固溶体.少量V5 取代Ta5 能够使MTV陶瓷的烧结温度从1450℃降至1150℃,但同时品质因数降低.x=0.1,1150℃烧结的Mg4(Ta1-0.1V0.1)2O9陶瓷具有较好的微波介电性能:ε约为11,Q·f值达41000GHz(8GHz).     

Effect of B2O3 additive on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramics

Journal of Materials Science: Materials in Electronics - This paper reported a research of the sinterability, microstructures, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) ceramics...     

Effects of NaF upon sintering temperature of Ba(Mg1/3Ta2/3)O3 dielectric ceramics

The effects of NaF additive upon the sintering temperature of Ba(Mg_1/3Ta_2/3)O₃ dielectric ceramics were investigated, and the densification of the present ceramics could be performed well at lower temperatures, even around 1200 C, when the concentration of NaF additive was equal or greater than 2 wt %. Moreover, no secondary phase was observed in such ceramics, except the limited surface layers.     

Effect of nickel on microwave dielectric properties of Ba(Mg1/3Ta2/3)O3

The dielectric and physical properties of the complex perovskite Ba(Mg_1/3Ta_2/3)O₃ system in which magnesium was substituted for nickel from 0.03–0.67 mol%, were investigated in the temperature range 20–110C, and the frequency range 10.5–14.5 GHz. As the nickel content was increased, the dielectric constant, the degree of ordering, and the unloaded Q decreased. The temperature dependence of the dielectric constant and the temperature coefficient of resonant frequency of the specimens annealed at 1500C for 20 h were found to be greater than those of the specimens sintered at 1650C for 2 h. These results are due to the increase in the density, the increase in grain size, and the lattice distortion.     

Sinterability improvement of Ba(Mg1/3Ta2/3)O3 dielectric ceramics

The sinterability of Ba(Mg_1/3Ta_2/3)O₃ ceramics synthesized by solid-state-reaction methods was investigated. The poor sinterability of the present ceramics was found to be primarily due to the presence of satellite secondary phases of Ba₅Ta₄O₁₅ and Ba₄Ta₂O₉, and the nearly complete densification of Ba(Mg_1/3Ta_2/3)O₃ ceramics was accomplished successfully by controlling the phase constitution of the calcined powders. For this purpose, enhanced ball-milling processes were found to be extremely effective. Moreover, excellent microwave dielectric characteristics (_r = 24.5–24.7, Q = 26 000 at 9.8 GHz, and _f = 1.7 p.p.m. C^–1) were attained in the dense Ba(Mg_1/3Ta_2/3)O₃ ceramics without additives.     

Structural order in Ba(Zn1/3Ta2/3)O3, Ba(Zn1/3Nb2/3)O3 and Ba(Mg1/3Ta2/3)O3 microwave dielectric ceramics

The process and nature of structural ordering and the factors that influence them have been investigated in the microwave dielectric perovskites, barium zinc tantalate (BZT), barium zinc niobate (BZN), and barium magnesium tantalate (BMT), sintered at various temperatures. The samples were characterized mainly by X-ray powder diffraction and transmission electron microscopy. The results show that short-range 1 : 1 B-site order features strongly in the early stages of ordering in BZT and BZN, but it is extremely rare in BMT, for which most grains commence with 1 : 2 order. As sintering progresses, 1 : 1 order is replaced by 1 : 2 long-range order in BZT and by disorder in BZN. Orientational variants of the ordered domains within grains occur in similar numbers when order is fine-scale, but their distribution is less homogeneous in well-ordered samples. Local inhomogeneities in the degree of order within grains, which will affect dielectric properties, correlate with both residual non-stoichiometry and the presence of dislocations. Incompletely reacted starting materials which may persist to late stages of sintering can also strongly influence order. Anomalously large ordered domains at grain boundaries are attributed to grain-boundary migration accompanied by enhanced diffusion. The results indicate that with starting materials that are well-mixed and homogeneous at the nanoscale, tailoring of physical properties should be possible by controlling the type and degree of order through chemical composition. This revised version was published online in November 2006 with corrections to the Cover Date.     

Effect of V2O5 additive to 0.4SrTiO3–0.6La(Mg0.5Ti0.5)O3 ceramics on sintering behavior and microwave dielectric properties

The effect of V₂O₅ addition on the microwave dielectric properties and the microstructures of 0.4SrTiO₃–0.6La(Mg_0.5Ti_0.5)O₃ ceramics sintered for 5 h at different sintering temperature were investigated systematically. It was found that the sintering temperature was effectively lowered about 200 °C by increasing V₂O₅ addition content. The grain sizes, bulk density as well as microwave dielectric properties were greatly dependent on sintering temperature and V₂O₅ content. The 4ST–6LMT ceramics with 0.25% V₂O₅ sintered at 1400 °C for 5 h in air exhibited optimum microwave dielectric properties of ɛ_r = 50.7, Q × f = 15049.6 GHz, T_f = −1.7 ppm/°C.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

B₂O₃ added Ba(Mg_1/3Nb_2/3)O₃ (BBMN) ceramics cannot be sintered below 930 °C. However, when CuO was added to them, they were sintered even at 850 °C. The amount of the Ba₂B₂O₅ second phase, which was formed in the BBMN ceramics decreased with the addition of CuO. Therefore, the CuO additive is considered to react with the B₂O₃ inhibiting the reaction between B₂O₃ and BaO. A dense microstructure without pores developed with the addition of a small amount of CuO. The bulk density, dielectric constant (ɛ_r) and Q-value increased with the addition of CuO, but decreased when a large amount of CuO was added. Excellent microwave dielectric properties were obtained for the Ba(Mg_1/3Nb_2/3)O₃ + 2.0 mol% B₂O₃ + 10.0 mol% CuO ceramic sintered at 875 °C for 2 h, with values Q_xf = 21 500 GHz, ɛ_r = 31 and temperature coefficient of resonance frequency (τ_f) = 21.3 ppm/°C.     

Effect of dopants on the low temperature microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics

Ba(Zn_1/3Ta_2/3)O₃ has been prepared with different dopants that gave best microwave dielectric properties at room temperature. Effects of different dopants on the low temperature microwave dielectric properties of BZT were investigated. With decrease in temperature, loss tangent was found to decrease marginally and then increase at temperatures lower than 100 K. Increase in loss factor at lower temperatures were found to be less for dopants with smaller ionic radii. Dielectric constant was found to be almost independent of temperature. Temperature coefficient of resonant frequency slowly decreased from a positive value to negative value when temperature was lowered. Temperature at which τ_f becomes zero was found to vary for different dopants. There is a temperature stable region for tanδ, ɛ_r and τ_f which varies for different dopants.     

Effect of preparation methods on microstructures and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics

Effect of preparation methods on microstructures and microwave dielectric properties of Ba(Mg_1/3Nb_2/3)O₃ ceramics was investigated. Ba(Mg_1/3Nb_2/3)O₃(BMN) ceramics were prepared by the conventional mixed oxides method and the molten salt synthesis method. It was shown that the single-phase of BMN was obtained at 900 °C in the molten salt synthesis method. No single-phase BMN was obtained in the conventional mixed oxides method, although the calcining temperature was increased up to 1400 °C. BMN powders prepared by the molten salt synthesis method had better sinterability than that prepared by the conventional mixed oxides method. Because of the very different nature of the powders, different microstructures were observed. The molten salt synthesis method ceramics have a higher B-site ordering parameter (S) and larger grain size than that of the conventional mixed oxides ceramics at same sintering temperature. The variation of Qf, ε _r and τ _f were also explained based on the difference in microstructures.     

Microwave dielectric properties of Ba(Mg1/3Ta(2−2x)/3Wx/3Tix/3)O3 ceramics

The microwave dielectric properties of ceramics based on Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ is investigated as a function of x. The densification as well as dielectric properties deteriorate with increase in the substitution levels of (Ti_1/3W_1/3)^3.33+ at (Ta_2/3)^3.33+ site in Ba(Mg_1/3Ta_2/3)O₃. The τ_f is approaching zero between x = 0.1 and 0.15 in Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ where quality factor is reasonably good (Q_u × f = 80,000–90,000 GHz). The Ba(Mg_1/3Ta_(2−2x)/3W_x/3Ti_x/3)O₃ with x = 1.0 has ɛ_r = 15.4, τ_f = −25.1 ppm/°C, Q_u × f = 35,400 GHz.     

Influence of Ba2+ substitution on the microwave dielectric properties of Nd(Mg0.5Sn0.5)O3 ceramics

The microwave dielectric properties of Nd(Mg_0.5?xBa_xSn_0.5)O₃ ceramics were examined with a view to their exploitation in mobile communication. The Nd(Mg_0.5?xBa_xSn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the Nd(Mg_0.47Ba_0.03Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. A density of 6.91 g/cm³, a dielectric constant (ε _r ) of 19.14, a quality factor (Q × f) of 97,500 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?65.4 ppm/°C were obtained for Nd(Mg_0.47Ba_0.03Sn_0.5)O₃ ceramics that were sintered at 1,600 °C for 4 h.     

Effect of V2O5 and CuO additives on sintering behavior and microwave dielectric properties of BiNbO4 ceramics

The influences of V₂O₅ and CuO additives on the sintering behavior and microwave dielectric properties of BiNbO₄ ceramics were investigated. The V₂O₅ and CuO additives lowered the sintering temperature of BiNbO₄ ceramics to the range 875 °C–935 °C. All BiNbO₄ compounds with additives had the orthorhombic structure. The dielectric constant _r was not significantly changed, while the unloaded Q value was affected with additives. The Qf value was found to be a function of the sintering temperatures and the amount of additives. It varied from 4500 to 15800 (GHz) and 1000 to 8000 (GHz) with additives V₂O₅ and CuO, respectively. The _f values were increased in positive values with V₂O₅ doped, while decreased in negative values with CuO addition. V₂O₅ and CuO additives effectively improved the densification and dielectric properties of BiNbO₄ ceramics. The correlation between the microstructure and the Qf value was observed with different additives.     

Effect of lithium salts addition on sintering temperature, cationic ordering and dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramic

The effect of different lithium salts (LiF, Li₂CO₃, LiNO₃) addition on sintering temperature, cationic ordering and dielectric properties of Ba(Mg_1/3Ta_2/3)O₃ ceramic has been investigated. This perovskite was synthesised by solid state reaction from BaCO₃, MgO and Ta₂O₅. It was shown that, by addition of LiNO₃, the sintering temperature was decreased to 1300°C (versus 1550°C–1600°C for the pure Ba(Mg_1/3Ta_2/3)O₃ ceramic) without altering dielectric properties at 1 MHz. A cationic ordering was also observed. Sintering with co-fired nickel electrodes in Ar/H₂ atmosphere was also successfully performed for Multi Layer Ceramic Capacitors applications.