Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe⁺ and Mo⁺ ions of 110 keV), swift heavy ions (²⁰⁸Pb²⁷⁺ ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xeⁿ⁺ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM).For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm³), which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.     

Effect of keV ion irradiation on mechanical properties of hydrogenated amorphous silicon

The susceptibility of mechanical properties of hydrogenated amorphous silicon (a-Si:H) to the implantation-enhanced disorder has been studied with the aim to extend the application field of this material in the technology of micro-electromechanical systems. Effect of keV ion irradiation on the elastic modulus, E, of hardness, H, and of root-mean-squared roughness to silicon ion implantation has been determined. The mechanical properties were evaluated by nanoindentation testing. E of 119 GPa and H of 12.3 GPa were determined for the as-prepared a-Si:H film. The implantation of silicon ions leads to a decrease in E and H, evaluated for a series of the implantation fluences in the range of 1.0 × 10¹³–5.0 × 10¹⁶ cm^?2. Surface smoothing has been observed at high fluences and low ion energy of 18 keV, suggesting that ion beam may be used as a tool to reduce the roughness of the a-Si:H surface, while keeping intact the mechanical properties inside the film. The conducted experiments show that it is possible to prepare a-Si:H films with hardness and smoothness comparable to crystalline silicon.     

Deuterium and helium retentions of V–4Cr–4Ti alloy used as first wall of breeding blanket in a fusion reactor

The deuterium and helium retention properties of V–4Cr–4Ti alloy were investigated by thermal desorption spectroscopy (TDS). Ion energies of deuterium and helium were taken at 1.7 and 5 keV, respectively. The retained amount of deuterium in the sample irradiated at 380 K increased with the ion fluence and was not saturated to fluence of up to 1 × 10²³ D/m². For the irradiation at 773 K, 0.1% of implanted deuterium was retained at the highest fluence. For the helium ion irradiation at room temperature, three groups of desorption peaks appeared at around 500, 850, and 1200 K in the TDS spectrum. In the lower fluence region (<1 × 10²¹ He/m²), the retained helium desorbed mainly at around 1200 K. With increasing fluence, the amount desorbed at 500 K increased. Total amount of retained helium in the samples saturated at fluence up to 5 × 10²¹ He/m² and saturation level was 2.7 × 10²¹ He/m².     

Tailoring the spring constant of Si nanorod structures using swift heavy ion irradiation

This study reports a post-deposition technique of engineering the mechanical properties of cantilever-like silicon nanorods by using swift heavy ion irradiation. Slanted silicon nanorods grown by glancing angle deposition technique on a patterned Si(1 0 0) substrate are irradiated by 100 MeV Ag⁺⁸ ions at a fluence of 10¹⁴ ions cm^?2. The average spring constant (k) of the nanorods determined by force–distance spectroscopy reduces to 65.6 ± 20.8 Nm^?1 post-irradiation as compared to 174.2 ± 26.5 Nm^?1 for pristine nanorods. Scanning electron micrographs show bending of the Si nanorods after irradiation. Micro-Raman and high-resolution transmission electron microscope studies on pristine and irradiated Si nanorods confirm the transformation of nanocrystalline regions present in pristine nanorods to amorphous phase on irradiation. This structural transformation and bending of the nanorods are responsible for the observed changes in the mechanical properties post-irradiation. The technique offers a simpler possibility of tailoring mechanical properties of nanostructures post-deposition by ion irradiation.     

Point defects induced in ion irradiated 4H–SiC probed by exciton lines

The defects produced in 4H–SiC epitaxial layers by irradiation with a 200 keV H⁺ ion beam in the fluence range 6.5 × 10¹¹–1.8 × 10¹³ ions/cm² are investigated by Low Temperature Photoluminescence (LTPL–40 K).The defects produced by ion beam irradiation induce the formation of some sharp lines called “alphabet lines” in the photoluminescence spectra in the 425–443 nm range, due to the recombination of excitons at structural defects.From the LTPL lines intensity trend, as function of proton fluence, it is possible to single out two groups of peaks: the P₁ lines (e, f, g) and the P₂ lines (a, b, c, d) that exhibit different trends with the ion fluence. The P₁ group normalized yield increases with ion fluence, reaches a maximum at 2.5 × 10¹² ions/cm² and then decreases. The P₂ group normalized yield, instead, exhibits a formation threshold at low fluence, then increases until a maximum value at a fluence of 3.5 × 10¹² ions/cm² and decreases at higher fluence, reaching a value of 50% of the maximum yield.The behaviour of P₁ and P₂ lines, with ion fluence, indicates a production of point defects at low fluence, followed by a subsequent local rearrangement creating complex defects at high fluence.     

Soft X-ray fluorescence measurements of irradiated polymer films

Fluorescent soft X-ray carbon Kα emission spectra (XES) have been used to characterize the bonding of carbon atoms in polyimide (PI) and polycarbosilane (PCS) films. The PI films have been irradiated with 40 keV nitrogen or argon ions, at fluences ranging from 1 × 10¹⁴ to 1 × 10¹⁶ cm⁻². The PCS films have been irradiated with 5 × 10¹⁵ carbon ions cm⁻² of 500 keV and/or annealed at 1000°C. We find that the fine structure of the carbon XES of the PI films changes with implanted ion fluence above 1 × 10¹⁴ cm⁻² which we believe is due to the degradation of the PI into amorphous C:N:O. The width of the forbidden band as determined from the high-energy cut-off of the C Kα X-ray excitation decreases with the ion fluence. The bonding configuration of free carbon precipitates embedded in amorphous SiC which are formed in PCS after irradiation with C ions or combined treatments (irradiation and subsequent annealing) is close to either to that in diamond-like films or in silicidated graphite, respectively.     

Ion induced structural modification and nano-crystalline formation of Zr–Al–Ni–Cu metallic glasses

The effect of the ion implantation on the phase transformation was studied for glassy and crystalline Zr₅₅Al₁₀Ni₅Cu₃₀ alloys, using Au⁺ ions with 500 keV. For the glassy metal surface, nano-crystalline precipitates were effectively formed in the amorphous matrix by 500 keV Au ion irradiation at a fluence of the about 10¹⁶ cm^?2. On the contrary, the long range ordering in the partly crystalline alloy was lost by the irradiation under the same condition. Moreover, the precipitation during the heat treatment near the crystallizing temperature was effectively suppressed in the ion implanted area. In the irradiated surface, the XPS valence band structure was drastically changed, while shifts of the binding energy were found in the core level electrons of Au 4f and Cu 2p, indicating a strong interaction between the implanted Au atoms and constituent atoms of the Zr-based alloy.     

SHI induced re-crystallization of Ge implanted SiO2 films

Ge nanocrystals embedded in SiO₂ matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO₂ films. In the present study, 400 keV Ge⁺ ions were implanted into SiO₂ films at dose of 3 × 10¹⁶ ions/cm² at room temperature. The as-implanted samples were irradiated with 150 MeV Ag¹²⁺ ions with various fluences. Similarly 400 keV Ge⁺ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au⁸⁺ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO₂ matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed.     

Empirical approach to the description of spectral performance degradation of silicon photodiodes used as particle detectors

The spectral deterioration of Hamamatsu S5821 silicon photodiodes for ion types and energies frequently used in Ion Beam Analysis was investigated. Focused proton beams with energies 430 keV and 2 MeV were applied to generate radiation damage via an area selective ion implantation in unbiased diodes at room temperature. The variations of spectroscopic features were measured “in situ” by Ion Beam Induced Current (IBIC) method as a function of fluence, within the 10⁹–5 × 10¹² ion/cm² range and diode bias voltages, between 0 and 100 V.An empirical model has been developed to describe the radiation damage. Equations are derived for the variations of the normalized peak position and peak width. The derived empirical equations are physically correct, as far as they account for the superposition of the influence of charge carrier trapping by native and radiation-induced defects and for the effect of charge carrier velocity saturation with electric field strength, as well.     

Electrical and structural characterization of ion implanted GaN

Ion implantation induced defects and their consequent electrical impact have been investigated. Unintentionally doped n-type gallium nitride was implanted with 100 keV Si⁺ and 300 keV Ar⁺ ions in a fluence range of 10¹⁴–10¹⁵ ions/cm². The samples were characterized with Rutherford backscattering/Channeling method for damage buildup. Time of flight elastic recoil detection analysis was implied on the Si implanted samples to see the ion depth distribution. Ar implanted GaN samples were studied electrically with scanning spreading resistance microscopy. Our results show that an Ar fluence of 5 × 10¹⁴ cm^?2 increases the resistance by five orders of magnitude to a maximum value. For the highest fluence, 6 × 10¹⁵ cm^?2, the resistivity decreases by two orders of magnitude.     

Ion beam mixing in uranium nitride thin films studied by Rutherford Backscattering Spectroscopy

Thickness, composition, concentration depth profile and ion irradiation effects on uranium nitride thin films deposited on fused silica have been investigated by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The films were prepared by reactive DC sputtering at the temperatures of ?200 °C, +25 °C and +300 °C. A perfect 1U:1N stoichiometry with a layer thickness of 660 nm was found for the film deposited at ?200 °C. An increase of the deposition temperature led to an enhancement of surface oxidation and an increase of the thickness of the mixed U–N–Si–O layers at the interface. The sample irradiation by 1 MeV Ar⁺ ion beam with ion fluence of about 1.2–1.7 × 10¹⁶ ions/cm² caused a large change in the layer composition and a large increase of the total film thickness for the films deposited at ?200 °C and at +25 °C, but almost no change in the film thickness was detected for the film deposited at +300 °C. An enhanced mixing effect for this film was obtained after further irradiation with ion fluence of 2.3 × 10¹⁶ ions/cm².     

Study of modifications in Lexan polycarbonate induced by swift O6+ ion irradiation

Swift Heavy Ion (SHI) irradiation of the polymeric materials modifies their physico-chemical properties. Lexan polycarbonate films were irradiated with 95 MeV oxygen ions to the fluences of 10¹⁰, 10¹¹, 10¹², 10¹³ and 2 × 10¹³ ions/cm². Characterization of optical, chemical, electrical and structural modifications were carried out by UV–Vis spectroscopy, FTIR spectroscopy, Dielectric measurements and X-ray Diffraction. A shift in the optical absorption edge towards the red end of the spectrum was observed with the increase in ion fluence. The optical band gap (E_g), calculated from the absorption edge of the UV–Vis spectra of these films in 200–800 nm region varied from 4.12 eV to 2.34 eV for virgin and irradiated samples. The cluster size varied in a range of 69–215 carbon atoms per cluster. In FTIR spectra, appreciable modification in terms of breaking of the cleavaged C–O bond of carbonate and formation of phenolic O–H bond was observed on irradiation. A rapidly decreasing trend in dielectric constant is observed at lower frequencies. The dielectric constant increases with fluence. It is observed that the loss factor increases moderately with fluence and it may be due to scissoring of polymer chains, resulting in an increase in free radicals. A sharp increase in A.C. conductivity in pristine as well as in irradiated samples is observed with frequency and is attributed to scissoring of polymer chains. XRD analyses show significant change in crystallinity with fluence. A decrease of ～9.02% in crystallite size of irradiated sample at the fluence of 2 × 10¹³ ions/cm² is observed.     

Annealing of ion implanted 4H–SiC in the temperature range of 100–800 °C analysed by ion beam techniques

Ion implantation induced damage formation and subsequent annealing in 4H–SiC in the temperature range of 100–800 °C has been investigated. Silicon Carbide was implanted at room temperature with 200 keV ⁴⁰Ar ions with two implantation fluences of 4 × 10¹⁴ and 2 × 10¹⁵ ions/cm². The samples were characterized by Rutherford backscattering and nuclear reaction analysis techniques in channeling mode using 2.00 and 4.30 MeV ⁴He ion beams for damage buildup and recovery in the Si and C sublattices, respectively. At low ion fluence, the restoration of the Si sublattice is evident already at 200 °C and a considerable annealing step occurs between 300 and 400 °C. Similar results have been obtained for the C sublattice using the nuclear resonance reaction for carbon, ¹²C(α,α)¹²C at 4.26 MeV. For samples implanted with the higher ion fluence, no significant recovery is observed at these temperatures.     

Deuterium trapping by irradiation damage in tungsten induced by different displacement processes

The deuterium trapping behaviors in tungsten damaged by light ions with lower energy (10 keV C⁺ and 3 keV He⁺) or a heavy ion with higher energy (2.8 MeV Fe²⁺) were compared by means of TDS to understand the effects of cascade collisions on deuterium retention in tungsten. By light ion irradiation, most of deuterium was trapped by vacancies, whose retention was almost saturated at the damage level of 0.2 dpa. For the heavy ion irradiation, the deuterium trapping by voids was found, indicating that cascade collisions by the heavy ion irradiation would create the voids in tungsten. Most of deuterium trapped by the voids was desorbed in higher temperature region compared to that trapped by vacancies. It was also found that deuterium could accumulate in the voids, resulting in the formation of blisters in tungsten.     

Micro-Raman studies of swift heavy ion irradiation induced structural and conformational changes in polyaniline nanofibers

Polyaniline (PAni) nanofibers doped with camphor sulfonic acid have been irradiated with 90 MeV O⁷⁺ ions at different fluences (3 × 10¹⁰?1 × 10¹² ions/cm²) using a 15UD Pelletron accelerator under ultra-high vacuum. XRD studies reveal a decrease in the domain length and an increase in the strain upon SHI irradiation. The increase in d-spacing corresponding to the (1 0 0) reflection of PAni nanofibers with increasing irradiation fluence has been attributed to the increase in the tilt angle of the chains with respect to the (a, b) basal plane of PAni. Decrease in the integral intensity upon SHI irradiation indicates amorphization of the material. Micro-Raman (μR) studies confirm amorphization of the PAni nanofibers and also show that the PAni nanofibers get de-doped upon SHI irradiation. μR spectroscopy also reveals a benzenoid to quinoid transition in the PAni chain upon SHI irradiation. TEM results show that the size of PAni nanofibers decreases with the increase in irradiation fluence, which has been attributed to the fragmentation of PAni nanofibers in the core of amorphized tracks caused by SHI irradiation.     

Ion beam shaping of Au nanoparticles prepared by micellar technique

Irradiation-induced burrowing and ion-induced shaping effects of Au nanoparticles are investigated. Hexagonally arranged Au nanoparticles prepared by micellar technique with diameter ～10 nm and inter-particle distance of about 80 nm were sequentially irradiated with 200 keV Ar⁺ ions to fluences of 5×10¹⁵ ions/cm². Irradiation with Argon ions causes sinking of the Au nanoparticles into the subjacent SiO₂ layer due to capillary driving forces related to specific wetting conditions while the spherical shape is conserved. Subsequent irradiation with 54 MeV Ag⁸⁺ swift heavy ions of these spherical Au nanoparticles confined within a silica matrix shapes them into prolate nanorods and nanowires whose principal axes are aligned along the beam direction. Above a threshold fluence two deformation regimes have been observed. For relatively low fluences Au nanoparticles elongate into nanorods depending on their volume. For high fluences, the formation of nanowires is observed provided that the inter-particle distance is short enough to allow for an efficient mass transport through the silica matrix.     

Stopping cross-section and energy straggling of protons in SiC obtained by nuclear resonant reaction of protons with 12C and 28Si

In order to evaluate stopping cross-section and energy straggling of protons in compound material SiC and its constituents C and Si, resonant backscattering spectra have been measured using proton beams in an energy range 4.9–6.1 MeV per a 100 keV step. We have observed two sharp nuclear resonances at proton energies of 4.808 MeV by ¹²C and 4.879 MeV by ²⁸Si. By systematic analyses of the resonance peak profiles, i.e., energy shift of the peak position and broadening of the peak width, the values of the stopping cross-section and the energy straggling have been deduced to be compared with SRIM-2006 and Bohr’s prediction.     

Thermal conductivity of SiC after heavy ions irradiation

In this study, we performed irradiation experiments on α-SiC samples, with heavy ions at room temperature (74 MeV Kr, fluence of 5 × 10¹⁴ ions cm^?2). This energy results in an irradiated layer of about 9.6 μm for SiC. TEM and Raman analyses reveal a graded damaged material. In the electronic interactions domain SiC is weakly damaged whereas it becomes fully amorphous in the nuclear interactions domain. According to the structural examinations, the irradiated SiC is considered as a multilayered material. Thermal conductivity in both electronic and nuclear interactions domains is measured as a function of temperature and annealing temperature. It appears that such an approach is reliable to estimate thermal conductivity of ceramics under neutron irradiation.     

Ion beam synthesis of SiC by C implantation into SIMOX(1 1 1)

We report the conversion of a 65 nm Si(1 1 1) overlayer of a SIMOX(1 1 1) into 30–45 nm SiC by 40 keV carbon implantation into it. High temperature implantation (600 °C) through a SiO₂ cap, 1250 °C post-implantation annealing under Ar ambient (with 1% of O₂), and etching are the base for the present synthesis. Sequential C implantations (fluence steps of about 5 × 10¹⁶ cm^?2), followed by 1250 °C annealing, has allowed to estimate the minimum C fluence to reach the stoichiometric composition as ～2.3 ×  10¹⁷ cm^?2. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution. A two-sublayers structure is observed in the synthesized SiC, being the superficial one richer in Si. Transmission electron microscopy has shown that a single-step implantation up to the same minimum fluence results in better structural quality. For a much higher C fluence (4 × 10¹⁷ cm^?2), a whole stoichiometric layer is obtained, with reduction of structural quality.     

Ion beam characterization of Fe-implanted GaN

Fe ion implantation in GaN has been investigated by means of ion beam analysis techniques. Implantations at an energy of 150 keV and fluences ranging from 2 × 10¹⁵ to 1 × 10¹⁶ cm^?2 were done, both at room temperature and at 623 K. Secondary Ions Mass Spectrometry was used to determine the Fe implantation profiles, whereas Rutherford Backscattering in channeling conditions with a 2.2 MeV ⁴He⁺ beam allowed us to follow the damage evolution. Particle Induced X-ray Emission in channeling conditions with a 2 MeV H⁺ beam was employed to study the lattice location of Fe atoms after implantation. The results show that a high fraction of Fe-implanted atoms are located in high symmetry sites in low fluence implanted samples, where the damage level is lower, whereas the fraction of randomly located Fe atoms increases by increasing the fluence and the resulting damage. Moreover, dynamical annealing present in high temperature implantation has been shown to favor the incorporation of Fe atoms in high symmetry sites.