GSGSMBE生长 1.84μm波长 InGaAs/InGaAsP应变量子阱激光器

报道了 GSMBE方法生长波长 1.84μm的 In Ga As/ In Ga As P/ In P应变量子阱激光器 . 40 μm条宽、 80 0 μm腔长的平面电极条形结构器件 ,室温下以脉冲方式激射 ,2 0℃下阈值电流密度为 3.8k A/ cm2 ,外微分量子效率为9.3%     

分子束外延生长高应变单量子阱激光器

采用分子束外延方法研究了高应变 In Ga As/Ga As量子阱的生长技术 .将 In Ga As/Ga As量子阱的室温光致发光波长拓展至 116 0 nm,其光致发光峰半峰宽只有 2 2 me V.研制出 112 0 nm室温连续工作的 In Ga As/Ga As单量子阱激光器 .对于 10 0 μm条宽和 80 0 μm腔长的激光器 ,最大线性输出功率达到 2 0 0 m W,斜率效率达到 0 .84m W/m A,最低阈值电流密度为 45 0 A/cm2 ,特征温度达到 90 K.     

大功率In(Ga)As/GaAs量子点激光器

利用分子束外延技术和 S- K生长模式 ,系统研究了 In As/Ga As材料体系应变自组装量子点的形成和演化 .研制出激射波长λ≈ 960 nm,条宽 1 0 0μm,腔长 80 0μm的 In( Ga) As/Ga As量子点激光器 :室温连续输出功率大于 3.5W,室温阈值电流密度 2 1 8A/cm2 ,0 .61 W室温连续工作寿命超过 3760小时     

全固源分子束外延InAsP/InGaAsP多量子阱1.55μm激光器

利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As P多量子阱激光器的报道     

MOCVD生长InGaAs/InGaAsP多量子阱光泵微碟激光器

用 MOCVD方法生长了 In Ga As/ In Ga As P多量子阱微碟激光器外延片 ,用光刻、干法刻蚀和湿法刻蚀等现代化的微加工技术制备出直径 9.5μm的 In Ga As/ In Ga As P微碟激光器 ,并详细介绍了整个制备工艺过程 .在液氮温度下用氩离子激光器泵浦方式实现了低阈值光泵激射 ,测出单个微碟激光器的阈值光功率为 15 0μW,激射波长约为 1.6μm,品质因数 Q=80 0 ,激射光谱线宽为 2 nm,同时指出微碟激光器激射线宽比 F- P普通激光器宽很多是由于其品质因数很高造成的     

应变补偿InGaAs/InAlAs量子级联激光器

利用应变补偿的方法研制出激射波长 λ≈ 3.5— 3.7μm的量子级联激光器 .条宽 2 0 μm,腔长 1 .6mm的 Inx Ga1- x As/Iny Al1- y As量子级联激光器已实现室温准连续激射 .在最大输出功率处的准连续激射可持续 30 min以上 .     

MBE自组织方法生长InGaAs/AlGaAs量子线FET材料

利用分子束外延 (MBE)技术在高指数面 Ga As衬底上自组织生长了应变 In Ga As/Ga As量子线材料。原子力显微镜 (AFM)观测结果表明量子线的密度高达 4× 1 0 5/cm。低温偏振光致发光谱 (PPL)研究发现其发光峰半高宽 (FWHM)最小为 9.2 me V,最大偏振度可达 0 .2 2。以 Al Ga As为垫垒 ,In Ga As/Ga As量子线为沟道 ,成功制备了量子线场效应管 (QWR-FET)结构材料 ,并试制了器件 ,获得了较好的器件结果     

GSMBE生长 1.8- 2.0μm波段In Ga As/ In Ga As P应变量子阱激光器

报道了气态分子束外延 ( GSMBE)生长 1.8— 2 .0μm波段 In Ga As/ In Ga As P应变量子阱激光器的研究结果 .1.8μm波段采用平面电极条形结构 ,已制备成功 10μm和 80μm条宽器件 ,器件腔长 5 0 0μm,室温下光致发光中心波长约为 1.82μm,在 77K温度下以脉冲方式激射 ,阈值电流分别约为 2 5 0 m A和 6 0 0 m A ,中心波长分别在 1.6 9μm和 1.73μm附近 .2 .0μm波段 ,制备成功 8μm宽脊波导结构器件 ,器件腔长 5 0 0μm,室温光致发光中心波长约为1.98μm ,77K温度下以脉冲方式激射 ,阈值电流约为 2 0 m A ,中心波长约为 1.89μm,其电流限制和纵模限制效     

InGaAs/InP量子线的子带结构和光学增益

采用有效质量理论 6带模型 ,计算了 In0 .53Ga0 .4 7As/ In P量子线的光学性质 ,具体计算了In0 .53Ga0 .4 7As/ In P量子线的能带结构、态密度、载流子浓度、光学跃迁矩阵元和光学增益谱 ,并把量子线的光学增益谱和量子阱的光学增益谱作了比较。     

外腔面发射激光器中纳米结构的热导率

优化有源区的量子结构和改善热管理,是提高外腔面发射激光器输出功率的关键。以上两项措施都基于对激光器准确的热分析,依赖于热导率这一关键的材料参数。鉴于外腔面发射激光器中多量子阱和分布布拉格反射镜均为典型的纳米结构,考虑纳米尺度传热特性,用三种不同的解析方法,分别计算了不同厚度Ga As/Al As分布布拉格反射镜的热导率,并与已有实验报道对比,优选出更适合于计算Ga As/Al As材料系纳米结构热导率的一种方法。采用优选出的方法,对980 nm外腔面发射激光器中In Ga As/Ga As多量子阱和Ga As/Al As分布布拉格反射镜的热导率进行计算,发现分布布拉格反射镜的法向热导率只有块体材料数值的约40%,多量子阱的法向热导率则略小于块体材料数值的一半。把所得热导率数据用于增益芯片中温度上升的数值分析,结果与实验相符。     

Study on spectral characteristics and operating parameters ofoptically pumped NH3 FIR cavity laser

By solving the density matrix equations of a quantum system and taking into account the multibeam interference characteristics of a Fabry-Perot cavity, the output power density of an optically pumped NH ₃ far-infrared (FIR) cavity laser was calculated by means of the iteration method. Based on the calculations, the spectral characteristics and operating parameters of the laser were studied. Experimentally, by using inductive metallic meshes as reflectors and couplers, a series of FIR cavity lasers with a sample tube of 10, 20, and 100 cm in length were designed and constructed, and the emissions of the NH₃ cavity lasers pumped by a TEA-CO₂ laser with a 10R(8) or 9R(16) line were measured. The experimental results were in good agreement with theoretical calculations     

Effect of cavity length on 1.55 ?m buried-heterostructure DH laser characteristics

Various parameters in 1.55 ?m buried-heterostructure DH laser design are obtained by simple analytical approximations and the effect of cavity length on laser characteristics. Threshold current density is found to vary strongly (3?10 kA/cm2) with cavity length when cleaved short enough. Interference in far-field patterns is shown to depend on cavity length.     

Single-wavelength CO2laser without dispersive elements

Observation of single-wavelength operation in a TEM00mode laser at the 80-W level without the use of intracavity dispersive elements is reported. The output wavelength remains at theP(20)line irrespective of cavity length changes, gas mixture, and excitation level for cavity lengths of about 4 m or longer.     

Hybrid Q-switched laser with Ti-indiffused LiNbO/sub 3/ and Er-Yb co-doped glass waveguides

We report the design and characterization of a novel Q-switched laser configuration based on a composite Er/sup +3/-Yb/sup +3/ co-doped ion-exchanged glass and Ti-indiffused LiNbO/sub 3/ waveguides. This 1536 nm Q-switched laser provides stable 200 ns wide optical pulses for a cavity length of 7 m with a peak power of 13.5 W and a pulse energy of 2.7 /spl mu/J at a 2-kHz repetition rate and 180 mW of 980-nm pump power. Also, we examine the dependence of the pulsewidth and peak power on the laser cavity length to estimate the performance of the integrated version of such a laser.     

掺钛蓝宝石激光器的增益开关特性研究

实验研究了调QNd:YAG激光器泵浦的增益开关型掺钛蓝宝石激光器的时间特性,泵浦能量水平(泵浦能量/阈值能量)变化范围为2.1～3.8,腔长变化范围为20cm～60cm,并改变了腔的损耗。根据增益开关激光器时间特性的理论,激光脉冲的建立时间和其脉冲宽度取决于泵浦能量水平和腔长,并与腔损耗成反比,而与泵浦脉宽和波形无关,实验结果与理论分析相符。当用10ns脉宽的激光脉冲泵浦时,在20cm短腔长情况下获得了比泵浦光脉宽窄的仅4ns脉宽的激光脉冲。     

Observations of spontaneous phase locking of LiNdP4O12lasers

Spontaneous or self-locking effects of the TEM00mode at 1.05 μm have been observed for an LiNdP4O12(LNP) laser. Pulse repetition frequency was 600 MHz, corresponding toc/2L(c: light velocity,L: cavity length). The effect of low-frequency resonance on self-locking is also discussed experimentally.     

Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

A GaInP/AlGaInP broad-area (60 × 500 ?m2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.     

Cavity length dependence of high-speed 1.55-/spl mu/m multiple-quantum-well laser diode characteristics

Spontaneous emission spectra below threshold were measured from the side wall of InGaAs QW laser diodes to extract laser design parameters such as cavity length dependence of gain, linewidth enhancement factor, and serial resistance. The threshold current varies according to the change of cavity length, and thus, the lasing peak shifts and the serial resistance changes. It is interesting that the linewidth enhancement factor, however, is not deteriorated by shortening cavity length. The short cavity length would rather improve the linewidth enhancement factor mainly by shifting the lasing peak to smaller wavelength side, where the linewidth enhancement factor is inherently low.     

High-power continuous-wave operation of quantum-cascade lasers up to 60/spl deg/C

High-temperature high-power continuous-wave (CW) operation of high-reflectivity-coated 12-/spl mu/m-wide quantum-cascade lasers emitting at /spl lambda/ = 6 /spl mu/m with a thick electroplated Au top contact layer is reported for different cavity lengths. For a 3-mm-long laser, the CW optical output powers of 381 mW at 293 K and 22 mW at maximum operating temperature of 333 K (60/spl deg/C) are achieved with threshold current densities of 1.93 and 3.09 kA/cm/sup 2/, respectively. At 298 K, the same cavity gives a maximum wall plug efficiency of 3.17% at 1.07 A. An even higher CW optical output power of 424 mW at 293 K is obtained for a 4-mm-long laser and the device also operates up to 332 K with an output power of 14 mW. Thermal resistance is also analyzed at threshold as a function of cavity length.     

1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diodelaser on GaAs using metal-organic chemical vapor deposition

We demonstrate here 1.2-μm laser emission from a GaAsP-InGaAs strain compensated single-quantum-well (SQW) diode. This development enables the fabrication of vertical-cavity surface-emitting lasers for optical interconnection through Si wafers. Strain compensation and low temperature growth were used to extend the wavelength of emission to the longest yet achieved on a GaAs substrate in this materials system. The minimum threshold density achieved was 273.4 A/cm² at a cavity length of 610 μm. We have also demonstrated an 1.144-μm lasing wavelength in a 820-μm-long cavity on a GaAs substrate with a strained InGaAs-GaAs SQW laser for comparison using a low-temperature metal-organic chemical vapor deposition growth technique. The threshold current density for a 590-μm-long cavity under CW operation was 149.7 A/cm²