Zn2+掺杂对0.965MgTiO3-0.035SrTiO3微波介质陶瓷结构与性能影响研究

采用固相反应法制备了0.965 MgTiO3-0.035SrTiO3 (MST)微波介质陶瓷,选用Zn2+对MST陶瓷进行了A位离子掺杂,研究了不同Zn2+掺杂量对陶瓷烧结性能、晶相组成、显微结构及微波介电性能的影响.结果表明,Zn2的掺入促进了陶瓷的烧结,显著提高了陶瓷的致密度,且没有改变陶瓷的主晶相.在掺杂量小于0.04mol％范围内,随着Zn2+掺杂量的增加,陶瓷的介电常数增加,品质因素和频率温度系数略有降低.中间相MgTi2 O5的衍射峰强度随着Zn2+掺杂量的增加逐渐减弱直至完全消失.当Zn2掺杂量为x=0.03时,陶瓷的烧结温度由1380℃降低至1290℃,并呈现优异的微波介电性能:εr=22.51,Q×f=16689 GHz,τf=-4.52×10-6/℃.     

添加CuO对Ca(Sm0.5Nb0.5)O3陶瓷烧结和微波介电性能的影响

采用传统高温固相反应法制备了掺杂不同量烧结助剂CuO的Ca(Sm0.5Nb0.5)O3微波介质陶瓷,研究了CuO对Ca(Sm0.5Nb0.5)O3陶瓷的烧结性、结构及微波介电性能的影响. 结果表明：添加CuO能有效促进Ca(Sm0.5Nb0.5)O3陶瓷晶粒致密化,降低烧结温度约200℃. 添加1.5%(w) CuO, 1350℃保温4 h烧结的Ca(Sm0.5Nb0.5)O3陶瓷的介电性能较优,相对介电常数er=23.98,品质因素与频率乘积Q′f=27754.5 GHz,谐振频率温度系数tf=-2.7′10-6 ℃-1.     

CuO掺杂对Bi_(1.5)ZnNb_(1.5)O_7介质陶瓷性能的影响

采用固相反应法制备Bi_(1.5)ZnNb_(1.5)-xCu_xO_7介电陶瓷,研究了Cu~(2+)替代Nb~(5+)对α-BZN烧结温度、相结构以及介电性能的影响。研究可知:CuO替代能显著降低BZN烧结温度约150℃,材料结构允许的掺杂范围为x≤0.15,样品随掺杂量增加易出现第二相,介电性能也随之变差。CuO掺杂对介电常数温度系数具有明显的调节作用,当x=0.1 mol,在1 MHz下样品获得最佳性能:ε_r=144.226、tanδ=0.0038976、τ_f=-51.61×10~(-6)。     

添加剂对Ba(Zn1/3Nb2/3)O3-Sr(Zn1/3Nb2/3)O3陶瓷介电性能的影响

研究了MnCO3,BaZrO3对0.35Ba(Zn1/3Nb2/3)O3(BZN)-0.65Sr(Zn1/3Nb2/3)O3(SZN)陶瓷介电性能的影响.研究表明:添加MnCO3,BaZrO3时,对陶瓷的烧结均起促进作用,增大介电常数.加入1%(质量分数)的MnCO3可使陶瓷具有较小的介质损耗,同时MnCO3对陶瓷的介电常数温度系数具有正向调整作用.加入BaZrO3后通过生成液相而减少了第二相Ba5Nb4O15,BaNb2O6的生成.所制备的(0.35BZN0.65SZN)+0.1%MnCO3陶瓷的εr≈43.6,αe≈-8×10-6/K,tanδ＝0.6×10-4,且烧结温度低于1 300℃.     

V2O5掺杂对(Bi1.5Zn1.0Nb1.5)O7介质陶瓷性能的影响

采用传统的固相反应法制备陶瓷试样,借助XRD,SEM和LCR测试仪,研究了V2O5掺杂对(Bi1.5Zn1.0Nb1.5)O7介质陶瓷的烧结特性和介电性能的影响.结果表明,掺杂适量V2O5后试样的烧结温度明显降低,相结构仍为立方焦绿石单相,且具有良好的介电性能:介电常数(εr)为135～154,介电损耗(tan δ)为0.0033～0.0007,频率温度系数(τf)为-442～-387(2MHz).     

CuO和V2O5掺杂对ZnNb2O6陶瓷介电性能的影响

采用传统的固相反应法制备了CuO和V2O5掺杂的ZnNb2O6介质陶瓷.通过X射线衍射,扫描电镜以及电感-电容-电阻测试仪等测试手段对其烧结特性,晶体结构,微观形貌和介电性能进行研究.结果表明:CuO和V2O5掺杂能降低ZnNb2O6陶瓷的烧结温度,影响相结构,改变微观形貌并优化介电性能.掺杂质量分数为0.25%CuO和0.25%V2O5的ZnNb2O6陶瓷样品在1 025℃烧结后,在100 MHz下具有较好的综合介电性能:介电常数εr=35,介电损耗tanδ=0.000 21,频率温度系数τf=-44.41×10-6/℃.     

Mg_3(VO_4)_2-BiNbO_4复合陶瓷的低温烧结及微波介电性能

采用传统固相反应法制备(1-x)Mg3(VO4)2-xBiNbO4复合微波介质陶瓷材料,研究陶瓷的烧结特性、微观结构和微波介电性能。结果表明:当x从0.2增加到0.6,在最佳烧结温度制备的Mg3(VO4)2-BiNbO4陶瓷的机械品质因数与频率的乘积(Q×f)随x增大而减小,相对介电常数(εr)随x增大而增大,谐振频率温度系数(τf)随x增大从正变为负;通过调节x值,在x=0.2处获得近零的τf。Mg3(VO4)2与BiNbO4的复合可实现低温烧结;当x=0.2、850℃的低温致密成瓷获得了优良的微波介电性能:εr=14.76,Q×f=27930GHz(f0=8.29GHz),τf=3.65×10-6/℃。     

Ba(Zn_(1/3)Nb_(2/3))O_3--ZnNb_2O_6复相陶瓷的显微结构和介电性能

采用传统电子陶瓷工艺制备Ba(Zn1/3Nb2/3)O3--ZnNb2O6(BZNZ)复相陶瓷,研究了Ba(Zn1/3Nb2/3)O3(BZN)含量对BZNZ陶瓷显微结构和微波性能的影响。结果表明,加入BZN提高了陶瓷的烧结温度,陶瓷为复相结构,除Ba(Zn1/3Nb2/3)O3与ZnNb2O6两种基体相外,有新相BaNb3.6O10生成。在微波频率下,随BZN含量增多,复相陶瓷的介电常数逐渐增大,品质因数Q×f值先增大后减小,谐振频率温度系数τf沿正方向移动。当BZN摩尔分数为30%时,陶瓷的综合性能最佳:相对介电常数εr=30.76,Q×f=29 600GHz,介电损耗tanδ=1.98×10--4,τf=--2.34×10--6/℃。     

NPO型铋基焦绿石复相陶瓷的制备及介电性能

为获得温度稳定型高频高介材料,通过复相介电组成调控原理,将正温度系数型焦绿石相(Bi1.5Zn0.5)(Zr1.5Nb0.5)O7(BZZN)与负温度系数型(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN)混合构成BZN-BZZN复相材料.研究了该系列陶瓷的物相组成、晶体结构及介电性能随两相组成的变化规律.晶体结构精修获得了复相结构中两相的晶格常数、A-O'键长、B--O键长、O—B—O键角的变化.复相陶瓷的介电性能可通过两相比例有规律地调制,随着BZZN含量增多,(1-x)BZN-xBZZN介电常数εr略有下降,介电常数温度系数逐渐由负值向正值变化.当x=0.7时,获得高介电常数、零温度系数陶瓷材料:εr=123.2,tanδ=7×10-4,αε=5×10-6/℃.     

MnCO_3掺杂对BMN陶瓷结构及介电性能的影响EI北大核心CSCD

采用固相烧结法,探讨了MnCO_3掺杂降低Ba(Mg_(1/3)Nb_(2/3))O_3(BMN)烧结温度的机理,研究了MnCO_3掺杂量对BMN陶瓷微波介电性能的影响。结果表明,适量的MnCO_3掺杂可以促进烧结,有效降低BMN陶瓷的烧结温度,改善陶瓷的微波介电性能。当MnCO_3掺杂量为4%(质量分数)时,BMN陶瓷的烧结温度从纯相烧结时的1 550℃降低到1 250℃,表观密度ρ=6.36 g/cm^3,相对理论密度达到98.6%,并具有良好的微波介电特性:高相对介电常数ε_r=31.4,高品质因数与谐振频率的乘积Q·f=99 200 GHz(8 GHz),接近于零的谐振频率温度系数τ_f=3×10^(–7)/℃。     

Na0.5Bi0.5TiO3基无铅陶瓷的铁电相变和弛豫特性研究进展

综合介绍了Na0.5Bi0.5TiO3（sodium bismuth titanate,NBT）基无铅铁电材料在铁电相变和弛豫特性方面近年来国内外的研究进展。介绍了温度变化对NBT铁电性能的影响以及产生弛豫相变的机理。此外,结合本课题的研究成果,介绍了不同含量BaTiO3和K0.5Bi0.5TiO3及其它化合物取代后对NBT基铁电相变和弛豫特性的影响。指出了在提高压电性能的同时,大幅降低材料铁电一反铁电相变,即材料的退极化温度,可能会影响到压电陶瓷材料的使用温度范围。     

水热法合成Bi1.5ZnNb1.5O7纳米粉体

以Bi(NO3)3·5H2O,ZnO和Nb2O5为原料,KOH作为矿化剂,用水热法合成了单相Bi1 5ZnNb1.5O7粉体.用N2吸附法测定单相Bi1.5ZnNb1.5O7粉体的比表面积并计算相应的粒径.研究了KOH浓度、合成温度和反应时间对粒径的影响.用X射线衍射分析合成粉体的物相组成,并通过Scherrer公式计算粉体晶粒的尺寸.用透射电子显微镜分析合成粉体的形貌.结果表明:采用水热法可以合成单相立方焦绿石结构的Bi1.5ZnNb1.5O7纳米粉体.改变水热反应条件,可以控制合成粉体的粒径和比表面积大小.当KOH浓度为1.8 mol/L,温度为180～220 ℃,反应时间为24h时,合成的Bi1.5ZnNb1.5O7纳米粉体的最小粒径为51 nm,最大比表面积为28.8 m2/g.     

Silver cofirability differences between Bi1.5Zn0.92Nb1.5O6.92 and Zn3Nb2O8

We have investigated systematically the differences of silver cofirability and microwave dielectric properties between Zn₃Nb₂O₈ and Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN). Two type dopants: 0.29BaCO₃–0.71CuO (BC) and 0.81MoO₃–0.19CuO (MC) were used in Zn₃Nb₂O₈ and Bi_1.5Zn_0.92Nb_1.5O_6.92 ceramics so they can be cofired with silver. The BC-doped ceramics in general have better dielectric properties than those of MC-doped ceramics. The BC-doped Zn₃Nb₂O₈ exhibits better dielectric properties than those of BC-doped BZN (k = 14.7, Q × f = 8200 GHz versus k = 120.1, Q × f = 1050 GHz). For silver compatibility study, the interfacial behaviors between microwave dielectric materials and silver were investigated by using X-ray diffractometer, scanning electronic microscope, and electronic probe microanalyzer. No new crystalline phase and no silver migration behavior were found in the BC-doped Zn₃Nb₂O₈ ceramics cofired with silver, but slight silver migration was detected for BC-doped BZN. But slight silver migration was detected for MC-doped Zn₃Nb₂O₈ and BZN ceramics cofired with silver. Therefore, the good overall properties of BC-doped Zn₃Nb₂O₈ are suitable for microwave applications.     

0.5dtex超细丙纶后纺加弹工艺研究

对生产 0 .5 dtex超细丙纶的后纺加弹工艺参数如摩擦盘种类及组合、拉伸温度、拉伸比、加工速度等进行调整 ,确定了加弹工艺为 :第一热箱温度 12 5℃ ,加工速度 40 0 m /m in,拉伸倍数为 1.15倍 ,聚氨酯摩擦盘 ,组合 1-4 -1,经 72 h试运转统计 ,成品率为 87% ,一等品率达到 81%     

Comparison of microwave dielectric behavior between Bi1.5Zn0.92Nb1.5O6.92 and Bi1.5ZnNb1.5O7

The microwave dielectric, Bi_1.5ZnNb_1.5O₇ exhibits low-temperature dielectric relaxation. To find the origin of the dielectric relaxation of Bi_1.5ZnNb_1.5O₇, we studied the structure and dielectric behavior of Bi_1.5ZnNb_1.5O₇ in detail. The Bi_1.5ZnNb_1.5O₇ is not composed of a single phase pyrochlore structure. Instead, it consists of unusual structure of Bi_1.5Zn_0.92Nb_1.5O_6.92 and ZnO. The ZnO is distributed evenly in the grain and at the boundary of the Bi_1.5Zn_0.92Nb_1.5O_6.92 structure. Many small voids (<1 μm) were observed in the samples due to the loss of volatile Bi during sintering. The Bi_1.5Zn_0.92Nb_1.5O_6.92 exhibited a broad dielectric relaxation between 100 and 400 K at 1.8 GHz, peaking around 230 K. The Fourier transformation IR spectra predict that dielectric relaxation may occur near room temperature during extremely high frequencies (THz). The substitutional point defects in Bi_1.5Zn_0.92Nb_1.5O_6.92 provide room for dielectric relaxation at microwave frequencies. The low quality factor Q × f (∼520 GHz) of Bi_1.5Zn_0.92Nb_1.5O_6.92 results from both the dielectric relaxation of the material and the voids within its microstructure. The presence of ZnO phase in the Bi_1.5ZnNb_1.5O₇ produces interstitial defects that further enhance the dielectric relaxation with reduced quality factor Q × f (∼426 GHz).     

Production and properties of In and Ir doped Bi1.5Zn0.92Nb1.5O6.92 pyrochlores

In and Ir were doped into Bi_1.5Zn_0.92Nb_1.5O_6.92 (BZN) pyrochlore using the chemical formulas of Bi_1.5Zn_0.92?3x/2In_xNb_1.5O_6.92 and Bi_1.5Zn_0.92Nb_1.5?4x/5Ir_xO_6.92. While In was doped into Zn site of BZN, Ir was added into the Nb site. The solubility limits of In and Ir cations in BZN were x = 0.1 and x = 0.12–0.15, respectively. Above the solubility limits second phases of BiNbO₄ and InNbO₄ formed for In doping but Bi₂Ir₂O₇ and ZnO phases appeared in Ir doping. SEM investigation confirmed the XRD results. Lattice parameters of BZN pyrochlores slightly increased with In doping but decreased with Ir due to their ionic radii. The dielectric constant of Ir doped BZN slightly decreased with Ir content. However, In doping into the BZN generally decreased the dielectric constant at low doping ratios but increased it at high dopings. Temperature coefficients of Ir and In doped BZN ceramics were significantly affected by doping amount.     

添加表面活性剂对Bi_2O_3-ZnO-Nb_2O_5系陶瓷温度系数的影响

研究了原料混合球磨研磨时 ,加入表面活性剂对Bi2 O3-ZnO -Nb2 O5(BZN )系复相区陶瓷的相组成及性能的影响 .依据最佳的(Bi3xZn2 - 3x) (ZnxNb2 -x)O7陶瓷配方 ,采用固相反应法制备BZN陶瓷试样 .在原料混合球磨研磨时 ,加入具有醇和胺双重性质的两性表面活性剂 ,借助XRD ,DTA ,SEM和HP42 74A阻抗分析仪等研究手段 ,研究实验制备的BZN陶瓷试样的相结构与介电性能 .结果表明 :试样的相结构仍为焦绿石立方结构α相和单斜结构β相的 (α +β)复相焦绿石结构 ;在制备过程中加入表面活性剂 ,可降低Bi2 O3,ZnO ,Nb2 O5原料固液界面表面张力 ,破坏原料的团聚状态 ,达到各种原料的充分混合 ,从而促进了在较低温度下形成相对较多的立方焦绿石α相 ,提高了相组成的稳定性 .大大扩大了符合零温度系数 [( 0± 30 )× 10 - 6 /℃ ]要求的烧成范围 ,且此BZN陶瓷介电常数高 (ε≥ 10 5 )、介电损耗小 (tgδ <10 - 4 )     

K+,La3+联合取代A位Zn2+的BZN基陶瓷的相结构与介电性能研究

在具有立方焦绿石结构的Ｂｉ１．５Ｚｎ０．５（Ｚｎ０．５Ｎｂ１．５）Ｏ７陶瓷的基础上,引入Ｋ＾＋,Ｌａ＾３＋离子联合取代Ａ位Ｚｎ＾２＋,对其结构与介电性能进行了研究。     

Bi0/Bi2O2CO3/N-TiO2复合材料的制备及其光催化性能

利用TiO2纳米带作为基底,乙二胺作为还原剂及氮源,采用溶剂热法合成光催化复合材料Bi0/Bi2O2CO3/N-TiO2。通过XRD、SEM、TEM等对催化剂的结构进行表征,结果显示,直径为1.2~2.1 nm的单质铋（Bi0）和碳酸氧铋（Bi2O2CO3）的复合量子点均匀生长在一维TiO2纳米带（TiO2 NBs）表面。在可见光照射下,相比于TiO2（降解率30.95％）,Bi0/Bi2O2CO3/N-TiO2在3 h内实现了对有机污染物罗丹明B的高效降解（降解率95.02％）。最后进行活性物质捕获实验,证实h+和•OH是材料参与光催化降解罗丹明B的主要活性物质。