Pulse chemical vapour infiltration of SiC in porous carbon or SiC participate preform using an r.f. heating system

SiC was infiltrated into a porous carbon or an SiC particulate preform from a gaseous system of 6% CH₃SiCl₃-H₂ using a pulse chemical vapour infiltration apparatus and r.f. heating at 1273 to 1423 K. At 1273 K, the SiC matrix infiltrated the porous carbon initially to half the thickness of the substrate and finally over the full thickness. After 10000 pulses, three-point flexural strength saturated at about 120MPa. SiC particulate preform made from an average particle size of 4m was infiltrated by SiC. After 30000 pulses at 1273 K, the flexural strength of the composite increased to 200 to 220 M Pa.     

Some characteristics of a sparged agitated vessel under foaming — Mechanical control of foaming —

Foam-breaking with a rotating disk mechanical foam-breaker (MFRD) was studied for a foaming system containing a diluted detergent solution in a laboratory sparged agitated vessel. The change of the foam-breaking capacity of the MFRD by varying the air sparge rate, the working volume and the impeller speed or the disk diameter was measured. Based on these measurements, empirical equations are presented for predicting the critical foam-breaking regions of the MFRD fitted with the agitated vessel. The operational range where foam-breaking with the MFRD can be carried out effectively and economically is also discussed.     

Pressure-pulsed chemical vapour infiltration of TiN to SiC particulate preforms

SiC particulate preforms were infiltrated by TiN matrix from a gas mixture of TiCl₄ (5%), nitrogen (30%) and hydrogen using a repeating pressure pulse between 760 and about 1 torr. SiC particle sizes of 5 and 20 m were used. For matrix packing into deep level, optimum temperature was determined between 800 and 850 °C, and the maximum packing ratio reached 67% after 4 × 10⁴ pulses at 850 °C. The increase of TiCl⁴ concentration to 10% resulted in higher deposition rate and packing ratio. The decrease of nitrogen concentration led to slower deposition, that is, a similar effect to temperature lowering. The maximum flexural strength measured was 140 MPa.     

A cross-junction channel valveless-micropump with PZT actuation

A gas-jet micro pump with novel cross-junction channel has been designed and fabricated using a Si micromachining process. The valveless micro pump is composed of a piezoelectric lead zirconate titanate (PZT) diaphragm actuator and fluidic network. The design of the valveless pump focuses on a cross-junction formed by the neck of the pump chamber and one outlet and two opposite inlet channels. The structure of cross-junction allows differences in fluidic resistance and fluidic momentum inside the channels during each PZT diaphragm vibration cycle, which leads to the gas flow being rectified without valves. The flow channels were easily fabricated by using silicon etching process. To investigate the effects of the structure of the cross-junction on the gas flow rate, two types of pump with different cross-junction were studied. The design and simulation were done using ANSYS-Fluent software. The simulations and experimental data revealed that the step-nozzle structure is much more advantageous than the planar structure. A flow rate of 5.2 ml/min was obtained for the pump with step structure when the pump was driven at its resonant frequency of 7.9 kHz by a sinusoidal voltage of 50 V_p–p.     

Growth and photoreactive properties of a- and c-axis cerium-doped strontium barium niobate single-crystal fibers

The authors report on the photorefractive properties of cerium-doped strontium barium niobate (Ce:SBN60) single-crystal fibers grown by the laser-heated pedestal growth method. Single-crystal fibers, 250 mu m in diameter, were successfully grown along both the a- and c-axes. The diffraction efficiency and grating formation time results for each fiber in two beam coupling experiments are compared, with emphasis on their crystal orientation and relevant figure of merit. It is found that the hologram efficiency of the a-axis fiber is larger than that of the c-axis fiber and that its grating formation time is faster. The results suggest that Ce-doped SBN single-crystal fiber grown along the a-axis is a promising candidates for holographic storage, parallel data processing, and phase-conjugation mirrors.<>     

Study on critical dimension of printable phase defects using an EUV microscope

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.     

A 1.3-GHz fifth-generation SPARC64 microprocessor

A fifth-generation SPARC64 processor is fabricated in 130-nm partially depleted silicon-on-insulator CMOS with eight layers of Cu metallization. At V/sub dd/ = 1.2 V and T/sub a/ = 25/spl deg/C, it runs at 1.3 GHz and dissipates 34.7 W. The chip contains 191 M transistors with 19 M logic circuits in an area of 18.14 mm /spl times/ 15.99 mm and is covered with 5858 bumps, of which 269 are for I/O signals. It is mounted in a 1360-pin land-grid-array package. The 16-byte-wide system bus operates with a 260-MHz clock in single-data-rate or double-data-rate modes. This processor implements an error-detection mechanism for execution units and data path logic circuits in addition to on-chip arrays to detect data corruption. Intermittent errors detected in execution units and data paths are recovered via instruction retry. A soft barrier clocking scheme allows amortization of the clock skew and jitter over multiple cycles and helps to achieve high clock frequency. Tunability of the clock timing makes timing closure easier. A relatively small amount of custom circuit design and the use of mostly static circuits contributes to achieve short development time.     

High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

We have developed high-performance strained-SOI CMOS devices on thin film relaxed SiGe-on-insulator (SGOI) substrates with high Ge content (25%) fabricated by the combination of separation-by-implanted-oxygen (SIMOX) and internal-thermal-oxidation (ITOX) techniques without using SiGe buffer structures. The maximum enhancement of electron and hole mobilities of strained-SOI devices against the universal mobility amounts to 85 and 53%, respectively. On the other hand, we have also observed the reduction of carrier mobility in a thinner strained-Si layer or at higher vertical electric field conditions. For the first time, we have demonstrated a high-speed CMOS ring-oscillator using strained-SOI devices, and its improvement amounts to 63% at the supply voltage of 1.5 V, compared to control-SOI CMOS.     

Novel SOI p-channel MOSFETs with higher strain in si channel usingdouble SiGe heterostructures

We have studied p-channel advanced SOI MOSFETs using double SiGe heterostructures fabricated by the combination of SIMOX and high-quality strained-Si/SiGe regrowth technologies, in order to introduce higher strain in Si channel. It was revealed that this double SiGe structure of second Si_0.82Ge_0.18Si_0.93Ge_0.07 allows the second SiGe layer to relax by about 70%, because of the elastic energy balance between the second and the first-SiGe layers. As a result, the strain of Si layer on this double SiGe structure becomes higher than that of the single SiGe structure. Strained SOI p-MOSFETs using the double layer SiGe structure exhibited higher hole mobility than that of strained-SOI MOSFETs with single Si_0.9Ge_0.1 structure. The hole mobility enhancement of 30% and 45% was achieved in the strained-SOI MOSFETs with double SiGe structures, compared to that of the universal curve and the control-SOI MOSFETs, respectively     

Classification and identification of strains of Lactobacillus brevis based on electrophoretic characterization of D-lactate dehydrogenase: relationship between D-lactate dehydrogenase and beer-spoilage ability

The cell-free extracts of 60 strains which were identified phenotypically as being those of Lactobacillus brevis, including 48 isolates from the environment and 12 reference strains, were applied to polyacrylamide gel electrophoresis for extracting their NAD-dependent D- and L-lactate dehydrogenases (LDH). These strains were divided into 5 groups, i.e., Groups A, B, C, D, and E, on the basis of the electrophoretic mobilities of their D-LDH. The strains showed variations in their carbohydrate fermentation patterns. No relationship between the profile of D-LDH and the carbohydrate fermentation pattern was recognized. However, there appeared to be a relationship between the D-LDH profile and the beer-spoilage ability, because 40 out of 44 beer-spoilage strains identified as L. brevis were classified to Group B. We purified D-LDHs from the so-called complete beer-spoilage strain SBC 8002 of LDH Group B and from the non beer-spoilage strains JCM 1059T of LDH Group A and AHU 1508 of LDH Group C. Although the purified D-LDHs had the same molecular weight (84 kDa), each possessed a different optimum pH, optimum temperature, and isoelectric point. The aforementioned parameter values for the enzyme from the so-called complete beer-spoilage strain SBC 8002 of LDH Group B were 10.0, 50 degrees C, and 4.1, respectively; this strain was discriminated from the D-LDHs of the other two non beer-spoilage strains especially by its optimum temperature (50 degrees C).