Taking the above-mentioned mechanisms and their temperature dependence into consideration in the Schottky diode model, an outstanding agreement between theory and experiment was achieved in a wide temperature range.
Excluding the secondary current-transport mechanisms from the total current, a more exact value of the thermionic-emission saturation current Ite and thus a more accurate value ofΦb was reached.
The barrier height Φb and the modified Richardson constant A** were calculated from the plot of thermionic-emission saturation current Ite as a function of temperature too. The proposed method of finding Φb is independent of the exact values of the metal-semiconductor contact area A and of the modified Richardson constant A**. This fact can be used for determination of Φb in new Schottky structures based on multicomponent semiconductor materials.
Using the experimentally evaluated value A** = 1.796 × 106 Am−2K−2 for the barrier height determination from I–V characteristics the value of Φb = 0.881 ± 0.002 eV was reached independent of temperature.
The more exact value of barrier height Φb is a relevant input parameter for Schottky diode computer-aided modeling and simulation, which provided a closer correlation between the experimental and theoretical characteristics. 相似文献