Network formation and swelling behavior of photosensitive poly(vinyl alcohol) gels prepared by photogenerated crosslinking

Poly (vinyl alcohol) with pendent styrylpyridinium groups (SbQ) is insolubilized by photoirradiation. An association takes place in SbQ groups. The association of polymer chains becomes marked with increasing the number of SbQ groups. Mainly intermolecular crosslinks were formed. Transparent and homogeneous macrogels consisting of several intermolecular crosslinks are obtained. The proportion of the free water to the bound water in PVA-SbQ gels was 3.3?2.9 despite of the large change in conversion of photodimerization of SbQ groups, x=0.27?0.58. The water uptake after swelling of the gels in water increased 6–27 times compared to the original weight at pH=7. The higher the degree of photocrosslinking, the lower was the degree of swelling. The water diffusion coefficients, D, were (2.2?5.8) × 10^?5 cm² S^?1 for a 88% saponified PVA with 1 . 3 mol% SbQ groups. The volume of the gel increased discontinuously about 10-fold for the 99% saponified PVA with 0 . 096 mol% SbQ and 51% water (49% acetone). The acetone concentration at the transition decreased with increasing the degree of saponification of the PVA.     

Transfection of glutathione S-transferase (GST)-pi antisense complementary DNA increases the sensitivity of a colon cancer cell line to adriamycin, cisplatin, melphalan, and etoposide

The goal of this study was to demonstrate that glutathione S-transferase (GST)-pi is directly involved in the intrinsic and acquired resistance of cancer cells to anticancer drugs. To this end, GST-pi antisense cDNA was transfected into the cultured human colon cancer cell line M7609, which expresses an innately high level of GST-pi and shows intrinsic drug resistance, and into an M7609 strain with acquired resistance to Adriamycin (ADR;i.e., M7609/ADR cells). The changes in the sensitivity of these transfectants to various anticancer drugs were investigated. The intracellular concentrations of GST-pi in M7609/anti-1 cells and M7609/anti-2 cells, two clones that were established by transfection of GST-pi antisense cDNA into M7609 cells, were decreased to approximately half of those detected in the parent cells (M7609) and in the control cells transfected with vector alone (M7609/pLJ). The sensitivities of the antisense transfectants in relation to ADR, cisplatin, melphalan, and etoposide were increased -3.3-fold, 2.3-fold, 2.2-fold, and 2.1-fold, respectively, compared with those of M7609 and M7609/pLJ. On the other hand, the sensitivities of the antisense transfectants to Taxol, vincristine, 5-fluorouracil, and mitomycin C were not significantly changed. Similarly, the transfection of antisense cDNA into M7609/ADR cells resulted in the reduction of intracellular GST-pi concentration (by about half) and an increased sensitivity to ADR (4.4-fold), but no increase in 5-fluorouracil sensitivity. Thus, GST-pi is considered to be a multidrug resistance factor that is responsible for both the intrinsic and acquired resistance of cancer cells to anticancer drugs such as ADR, cisplatin, melphalan, and etoposide.     

Elevated Alpha 1(I) to Alpha 2(I) Collagen Ratio in Dermal Fibroblasts Possibly Contributes to Fibrosis in Systemic Sclerosis

Systemic sclerosis (SSc) is characterized by excessive collagen deposition in the skin and internal organs. Activated fibroblasts are the key effector cells for the overproduction of type I collagen, which comprises the α1(I) and α2(I) chains encoded by COL1A1 and COL1A2, respectively. In this study, we examined the expression patterns of α1(I) and α2(I) collagen in SSc fibroblasts, as well as their co-regulation with each other. The relative expression ratio of COL1A1 to COL1A2 in SSc fibroblasts was significantly higher than that in control fibroblasts. The same result was observed for type I collagen protein levels, indicating that α2(I) collagen is more elevated than α2(I) collagen. Inhibition or overexpression of α1(I) collagen in control fibroblasts affected the α2(I) collagen levels, suggesting that α1(I) collagen might act as an upstream regulator of α2(I) collagen. The local injection of COL1A1 small interfering RNA in a bleomycin-induced SSc mouse model was found to attenuate skin fibrosis. Overall, our data indicate that α2(I) collagen is a potent regulator of type I collagen in SSc; further investigations of the overall regulatory mechanisms of type I collagen may help understand the aberrant collagen metabolism in SSc.     

Electric double‐layer capacitor module with series‐parallel reconfigurable cell voltage equalizers

When electric double‐layer capacitors (EDLCs) are connected in series, a cell voltage imbalance occurs due to nonuniform cell properties. Cell voltage imbalance should be minimized to prolong cycle lives and maximize the available energy of cells. In this study, we propose a series‐parallel reconfigurable cell voltage equalizer that is considered suitable for energy storage systems using EDLCs instead of traditional secondary batteries as the main energy storage sources. The proposed equalizer requires only EDLCs and switches as its main circuit elements, and it utilizes EDLCs not only for energy storage but also for equalization. An equivalent circuit model using equivalent resistors that can be regarded as an index of equalization speed is developed. Current distribution and cell voltage imbalancing during operation are quantitatively generalized. Experimental charge–discharge tests were performed on the EDLC modules to demonstrate the performance of the cell voltage equalizer. All the cells in the modules could be charged/discharged uniformly even when a degradation‐mimicking cell was intentionally included in the module. The resultant cell voltage imbalances and current distributions were in good agreement with those predicted by mathematical analyses. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(4): 38–50, 2012; Published online in Wiley Online Library (wileyonlinelibrary.com). DOI 10.1002/eej.21287     

Active device‐less voltage equalization charger using capacitors,diodes, and an AC power source

Conventional cell/module voltage equalizers or equalization chargers based on traditional DC‐DC converters require numerous switches or transformers as the number of series connections increases; therefore, their cost and complexity tend to increase and their reliability decreases as the number of connections increases. This paper proposes a novel voltage equalization charger that consists only of passive components such as capacitors, diodes, and a transformer. The fundamental operating principle, major features, and derivation of equivalent DC circuits are presented. A symmetrical configuration is also proposed to mitigate the RMS current flowing through energy storage cells in the charging process. Simulations and experimental charging and cycle tests were performed on series‐connected electric double‐layer capacitor modules to demonstrate the equalization performance. The experimental and simulation results were in good agreement, and the voltage imbalances were gradually eliminated as time elapsed even during charge‐discharge cycling. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 181(3): 39‐48, 2012; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21288     

THz-wave absorption by field-induced carriers in pentacene thin-film transistors for THz imaging sensors

Innovative sensing systems based on THz electromagnetic waves have been attracting a great deal of attention. Although many THz detectors have been developed over the years, it is currently difficult to manufacture low-cost THz sensing/imaging devices. In the present study, we propose to use organic field-effect transistors (OFETs) and small potential fluctuation against the carriers within them (N. Ohashi, H. Tomii, R. Matsubara, M. Sakai, K. Kudo, M. Nakamura, Appl. Phys. Lett. 91 (2007) 162105). We use THz time-domain spectroscopy for OFETs in which the carrier density in the pentacene active layer is modulated by the gate bias. We found evidence that the accumulated free holes in pentacene films can be excited by THz photons to overcome the surrounding barriers in the fluctuating potential. The Drude–Lorentz model could not account for the shape of the absorption spectra, which suggests that the holes are weakly restricted by the potential fluctuation. The integrated absorption intensity was proportional to the transfer characteristics of the OFETs. The present findings represent an important step toward developing a new class of THz-wave sensors.     

Study of all-optical clock recovery performance by the primary and the secondary temporal Talbot effects in a second-order dispersive medium

We theoretically and experimentally study the all-optical clock recovery performance using the primary or the secondary temporal Talbot effects (PTTE or STTE, respectively) in a dispersive medium having the first-order dispersion together with the second-order dispersion (e.g., conventional single-mode fibers: SMFs). Our preliminary numerical simulations have indicated that the STTE-based all-optical clock recovery technique can improve double its performance as compared with the conventional PTTE-based technique when the second-order dispersion (dispersion slope) can be neglected. The following simulation results have revealed that the second-order dispersion, that the normal SMFs possess, limits the performance improvements in the STTE-based clock recovery, whereas the limited performance can be improved by appropriately compensating for the second-order dispersion. On the basis of our simulation results, experiments of the STTE-based clock recovery were conducted by compensating for the second-order dispersion of SMFs used as dispersive media. To be specific, SMFs’ second-order dispersion has been reduced to the one-sixteenth of its original value by combining with the reverse-dispersion fibers (RDFs) which can provide the second-order dispersion of the opposite sign to the SMFs. As a result, the performance improvements in the STTE-based clock recovery was demonstrated so that the 10-GHz clear optical clock pulses were successfully recovered from 10-Gbit/s return-to-zero (RZ) pseudo-random bit sequence (PRBS) optical signals.     

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

A method of Al₂O₃ deposition and subsequent post-deposition annealing (Al₂O₃-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al₂O₃-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al₂O₃-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 10¹⁶-10¹⁸ cm⁻³ for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al₂O₃-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al₂O₃-PDA.     

Temporal-Talbot-effect-based preprocessing for pattern-effect reduction in all-optical clock recovery using a semiconductor-optical-amplifier-based fiber ring laser

We propose and experimentally demonstrate the temporal-Talbot-effect (TTE)-based preprocessing for the pattern-effect reduction in the all-optical clock recovery using a semiconductor-optical-amplifier (SOA)-based fiber ring laser (SOA-FRL). The TTE-based preprocessing successfully reduced the pattern effects of the recovered clock pulses, so that the 10-GHz clear optical clock pulses were recovered from a 10-Gbit/s return-to-zero on–off keying (RZ-OOK) pseudo-random bit sequence (PRBS) optical signal. “Peak variation” and “Pattern-dependent intensity noise (PDIN)” were proposed and were utilized as parameters to quantitatively evaluate the pattern effects, from which recovered clock pulses suffer, in the temporal domain and the frequency domain, respectively. Peak variation was reduced from 77.2% to 36.2%, and PDIN was improved from ?103 dBc/Hz to ?110 dBc/Hz with the aid of the TTE-based preprocessing. Furthermore, we examined the tolerance of the proposed technique by intentionally deviating the input signal’s bit-rate by ±190 Mbit/s (±2% of the bit-rate) from the optimum condition for the TTE. As compared with the PDIN value for the pulse train obtained by the direct injection of the non-processed signal into the SOA-FRL, the PDIN of the recovered clock pulses using the preprocessed signal indicated improvements over the entire measurement range of ±190 Mbit/s, which corresponds to the wavelength-dispersion deviation of ±56 ps/nm (±4% of the wavelength-dispersion applied to the input signal) from the optimum value.