Unified reliability estimation and management of NoC based chip multiprocessors

We present a new architecture level unified reliability evaluation methodology for chip multiprocessors (CMPs). The proposed reliability estimation (REST) is based on a Monte Carlo algorithm. What distinguishes REST from the previous work is that both the computational and communication components are considered in a unified manner to compute the reliability of the CMP. We utilize REST tool to develop a new dynamic reliability management (DRM) scheme to address time-dependent dielectric breakdown and negative-bias temperature instability aging mechanisms in network-on-chip (NoC) based CMPs. Designed as a control loop, the proposed DRM scheme uses an effective neural network based reliability estimation module. The neural-network predictor is trained using the REST tool. We investigate how system’s lifetime changes when the NoC as the communication unit of the CMP is considered or not during the reliability evaluation process and find that differences can be as high as 60%. Full-system based simulations using a customized GEM5 simulator show that reliability can be improved by up to 52% using the proposed DRM scheme in a best-effort scenario with 2–9% performance penalty (using a user set target lifetime of 7 years) over the case when no DRM is employed.     

Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection

An increasing number of applications using ultraviolet radiation have renewed interest in ultraviolet photodetector research. Particularly, solar‐blind photodetectors sensitive to only deep UV (<280 nm), have attracted growing attention because of their wide applicability. Among recent advances in UV detection, nanowire (NW)‐based photodetectors seem promising, however, none of the reported devices possesses the required attributes for practical solar‐blind photodetection, namely, an efficient fabrication process, a high solar light rejection ratio, a low photocurrent noise, and a fast response. Herein, the assembly of β‐Ga₂O₃ NWs into high‐performance solar‐blind photodetectors by use of an efficient bridging method is reported. The device is made in a single‐step chemical vapor deposition process and has a high 250‐to‐280‐nm rejection ratio (～2 × 10³), low photocurrent fluctuation (<3%), and a fast decay time (<<20 ms). Further, variations in the synthesis parameters of the NWs induce drastic changes in the photoresponse properties, which suggest a possibility for tuning the performance of the photodetectors. The efficient fabrication method and high performance of the bridged β‐Ga₂O₃ NW photodetectors make them highly suitable for solar‐blind photodetection.     

A 20 GHz Steerable Array Antenna Using 3-bit Dielectric Slab Phase Shifters on a Coplanar Waveguide

A simple steerable array antenna is designed and developed using a movable dielectric phase shifter. The change of effective dielectric constant at different dielectric slab positions on a coplanar waveguide is used as the phase shifter. The impedance matching and desired phase shift conditions are satisfied at two slab heights, and the reflection is designed to be minimized at these slab positions. The low-loss dielectric material is used as the dielectric slab and is placed close to a coplanar transmission line with airgap. The 4times4 steerable array antenna with the phase shifters is designed and fabricated at 20 GHz. The H-plane radiation patterns are measured at different phase shift positions and compared with the expected results     

Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer

A single ??-structure thermoelectric (TE) module based on p-type NaCo₂O₄, n-type Mg₂Si, and Ni electrode was fabricated by the spark plasma sintering (SPS) method. The NaCo₂O₄ powder was synthesized by using a metal?Ccitric acid complex decomposition method. Bulk Mg₂Si prepared by melt quenching was ground into a powder and sieved to particle size of 75???m or less. To obtain a sintered body of NaCo₂O₄ or Mg₂Si, the powder was sintered using SPS. Pressed Ni powder or mixed powder consisting of Ni and SrRuO₃ powder was inserted between these materials and the Ni electrode in order to connect them, and electrical power was passed through the electrodes from the SPS equipment. The open-circuit voltage (V _OC) values of a single module in which TE materials were connected to the Ni electrodes by using pressed Ni powder was 82.7?mV, and the maximum output current (I _max) and maximum output power (P _max) were 212.4?mA and 6.65?mW at ??T?=?470?K, respectively. On the other hand, V _OC of a single module in which TE materials and an Ni electrode were connected with a mixed powder (Ni:SrRuO₃?=?6:4 volume fraction) was 109?mV, and I _max and P _max were 4034?mA and 109?mW at ??T?=?500?K, respectively. These results indicate that the resistance at the interface between the TE materials and the Ni electrode can be decreased and the output power can be increased by application of a buffer layer consisting of Ni and SrRuO₃.     

Experimental and numerical analysis of channel-length-dependent electrical properties in bottom-gate,bottom-contact organic thin-film transistors with Schottky contact

Channel length dependence of field-effect mobility and source/drain parasitic resistance in pentacene thin-film transistors with a bottom-gate, bottom-contact configuration was investigated. Schottky barrier effect such as nonlinear behaviors in transistor output characteristics appeared and became more prominent for shorter channel length less than 10 μm, raising some concerns for a simple utilization of conventional parameter extraction methods. Therefore the gate-voltage-dependent hole mobility and the source/drain parasitic resistance in the pentacene transistors were evaluated with the aid of device simulation accounting for Schottky contact with a thermionic field emission model. The hole mobility in the channel region shows smaller values with shorter channel length even after removing the influence of Schottky barrier, suggesting that some disordered semiconductor layers with low carrier mobility exist near the contact electrode. This experimental data analysis with the simulation enables us to discuss and understand in detail the operation mechanism of bottom-gate, bottom-contact transistors by considering properly each process of charge carrier injection, carrier flow near the contact region, and actual channel transport.     

Characterization of plasma membrane H+-ATPase from salt-tolerant yeast Candida versatilis

Plasma membrane was isolated from the salt-tolerant yeast Candida versatilis and the ATPase in plasma membrane was characterized. The ATPase was a typical H⁺-ATPase with similar properties to the Saccharomyces cerevisiae and Zygosaccharomyces rouxii enzymes. It was reacted with antibody (IgG) raised against S. cerevisiae plasma membrane H⁺-ATPase. The ATPase activity was not changed by adding NaCl and KCl to the assay solutions, but was increased by NH, especially by ammonium sulfate. In vivo stimulation of ATPase activity was observed by the addition of NaCl into the culture medium, as observed in Z. rouxii. No in vivo activation of H⁺-ATPase by glucose metabolism was observed in C. versatilis cells and the activity was independent of the growth phase, like Z. rouxii and unlike S. cerevisiae cells.     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

Experimental studies of bistatic scattering from two-dimensionalconducting random rough surfaces

Despite the recent development of analytical and numerical techniques for problems of scattering from two-dimensional rough surfaces, very few experimental studies were available for verification. The authors present the results of millimeter-wave experiments on scattering from two-dimensional conducting random rough surfaces with Gaussian surface roughness statistics. Machine-fabricated rough surfaces with controlled roughness statistics were examined. Special attention was paid to surfaces with large rms slopes (ranging from 0.35 to 1.00) for which enhanced backscattering is expected to take place. Experimentally, such enhancement was indeed observed in both the copolarized and cross-polarized returns. In addition, it was noticed that at moderate angles of incidence, the scattering profile as a function of observation angle is fairly independent of the incident polarization and operating frequency. This independence justifies the use of the geometric optics approximation embodied in the Kirchhoff formulation for surfaces with large surface radius of curvature. When compared with the experimental data, this analytical technique demonstrates good agreement with the experimental data     

On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT⁻¹ from room temperature to 500 °C and a low noise level of 9.45 nT Hz^−1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10⁻⁶ at room temperature and 2.3 × 10⁻⁶ at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.