A micromechanics model for the prediction of static strength of off-axis unidirectional laminates

In this paper a micromechanics model using the concentric cylinder assemblage model and the Mori-Tanaka average stress scheme is used to predict the static strength of unidirectional angle ply laminates. The predicted strengths agree with experimental results for Glass/Epoxy and Graphite/Epoxy systems.     

Template-free mechanochemical route to prepare crystalline and electroactive polydiphenylamine nanostructures

A facile and sustainable mechanochemical route for the synthesis of undoped polydiphenylamine (PDPA) and inorganic acid doped nanostructures are reported. Field emission scanning electron microscopic (FESEM) images highlighted the formation of distinctly different nanostructures for each of the inorganic acid doped PDPA. Elemental analysis carried out for the polymers revealed the presence of more repeating units in their backbone. The X-ray diffraction (XRD) results of the as-prepared PDPA nanostructures indicated the high degree of crystallinity ever reported for PDPA. Spectroscopic profile of the polymers showed that the prepared PDPA is in a doped conducting form. Electrochemical studies performed for the polymeric particles ascertained the redox behaviour and the good electrochemical activity of obtained PDPA samples. The probable mechanistic aspect behind the formation of PDPA nanostructures through this simple and efficient route is discussed.     

Sub-50 nm P-channel FinFET

High-performance PMOSFETs with sub-50-nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-aligned to each other and to the source/drain (S/D) regions; 3) raised S/D regions; and 4) a short (50 nm) Si fin to maintain quasi-planar topology for ease of fabrication. The 45-nm gate-length p-channel FinFET showed an I_dsat of 820 μA/μm at V_ds=V_gs=1.2 V and T _ox=2.5 mm. Devices showed good performance down to a gate-length of 18 nm. Excellent short-channel behavior was observed. The fin thickness (corresponding to twice the body thickness) is found to be critical for suppressing the short-channel effects. Simulations indicate that the FinFET structure can work down to 10 nm gate length. Thus, the FinFET is a very promising structure for scaling CMOS beyond 50 nm     

An n-unit standby redundant system with r repair facilities and preventive maintenance

Identifying suitable regeneration points the availability and reliability of an n-unit warm standby system with r repair facilities, in which the operating online unit is subjected to preventive maintenance are obtained. A numerical example is provided to illustrate the results obtained. Based on the numerical result, an optimal PM policy is also derived.     

Development of nano-composite lead-free electronic solders

Inert, hybrid inorganic/organic, nano-structured chemicals can be incorporated into low melting metallic materials, such as lead-free electronic solders, to achieve desired levels of service performance. The nano-structured materials technology of polyhedral oligomeric silsesquioxanes (POSS), with appropriate organic groups, can produce suitable means to promote bonding between nano-reinforcements and the metallic matrix. The microstructures of lead-free solder reinforced with surface-active POSS tri-silanols were evaluated using scanning electron microscopy (SEM). Wettability of POSS-containing lead-free solders to copper substrate was also examined. Steady-state deformation of solder joints made of eutectic Sn-Ag solder containing varying weight fractions of POSS of different chemical moieties were evaluated at different temperatures (25°C, 100°C, and 150°C) using a rheometric solids analyzer (RSA-III). Mechanical properties such as shear stress versus simple shear-strain relationships, peak shear stress as a function of rate of simple shear strain, and testing temperature for such nano-composite solders are reported. The service reliability of joints made with these newly formulated nano-composite solders was evaluated using a realistic thermomechanical fatigue (TMF) test profile. Evolution of microstructures and residual mechanical property after different extents of TMF cycles were evaluated and compared with joints made of standard, unreinforced eutectic Sn-Ag solder.     

Stress relaxation behavior of composite and eutectic Sn-Ag solder joints

Stress relaxation experiments were carried out at 25 C and 150 C on 96.5Sn-3.5Ag eutectic solder and Sn-Ag composite solder joints (Sn-Ag eutectic solder with 20 vol.% Cu₆Sn₅ reinforcements incorporated by in-situ methods). The magnitude of the stress drop during relaxation depends primarily upon the plastic shear strain imposed prior to the stress relaxation process. For sequential stress relaxation experiments that include unloading, the stress drop is nearly independent of the accumulated plastic shear strain. However, for sequential stress relaxation that does not include unloading, the stress relaxation is more dependent upon the cumulative plastic shear strain history. The stress in single shear lap joints does not relax to zero stress, as is observed in stress relaxation of bulk tension specimens, even at 150 C. Creep strain rates extracted from the relaxation data were much lower with smaller pre-strains in both eutectic Sn-Ag and composite solder joints. The stress exponent values (n) calculated from the stress relaxation test data ranged from 7 to 15 for both eutectic and composite solder joints, which were consistent with conventional creep data. These stress-relaxation behaviors can be explained on the basis of dislocation recovery processes that occur during relaxation and when specimens are unloaded.     

An autocorrelation-based time domain analysis technique for monitoring perfusion and oxygenation in transplanted organs

In designing an implantable sensor for perfusion monitoring of transplant organs the ability of the sensor to gather perfusion information with limited power consumption and in near real time is paramount. The following work was performed to provide a processing method that is able to predict perfusion and oxygenation change within the blood flowing through a transplanted organ. For this application, an autocorrelation-based algorithm was used to reduce the acquisition time required for fast Fourier transform (FFT) analysis while retaining the accuracy inherent to FFT analysis. In order to provide data proving that the developed method is able to predict perfusion as accurately as FFT two experiments were developed isolating both periodic and quasi-periodic cardiac frequencies. It was shown that the autocorrelation-based method was able to perform comparably with FFT (limited to a sampling frequency of 300 Hz) and maintain accuracy down to acquisition times as low as 4 s in length.     

Analysis of a new broadcast protocol for satellite communications

In this letter, we propose a tandem broadcast selective repeat (SR) ARQ scheme for satellite communications. In the scheme, the satellite operates in a store and forward manner, which minimizes the effect of the large round-trip delay. Numerical results show that the proposed scheme would largely improve the system performance     

Damage accumulation under repeated reverse stressing of Sn-Ag solder joints

To better understand the effect of repeated reverse stress in solder joints, a new testing method was developed. Tin-silver solder joints were fabricated, constrained between Cu blocks, and then subjected to repeated shear loading in a tensile tester. Constant strain amplitudes were applied to simulate service conditions. However, large loads were used to accelerate the damage accumulation. Microstructural features of the damage were very similar to those found with studies on thermomechanical fatigue (TMF) of small, single shear lap samples. Concentrated-shear banding or striations were observed to form along Sn dendrites. The load behavior of the solder with each cycle and during hold times at the extreme strain amplitude was consistent with damage accumulating with each successive cycle. Effects of strain amplitude, hold times at the stress extremes, number of cycles, and solder-joint thickness were found to play significant roles on the stress-strain behavior and surface damage.