全文获取类型
收费全文 | 1553篇 |
免费 | 32篇 |
国内免费 | 1篇 |
专业分类
电工技术 | 18篇 |
综合类 | 6篇 |
化学工业 | 358篇 |
金属工艺 | 19篇 |
机械仪表 | 39篇 |
建筑科学 | 73篇 |
矿业工程 | 8篇 |
能源动力 | 29篇 |
轻工业 | 222篇 |
水利工程 | 18篇 |
石油天然气 | 2篇 |
无线电 | 123篇 |
一般工业技术 | 226篇 |
冶金工业 | 263篇 |
原子能技术 | 17篇 |
自动化技术 | 165篇 |
出版年
2022年 | 12篇 |
2021年 | 18篇 |
2020年 | 18篇 |
2019年 | 11篇 |
2018年 | 17篇 |
2017年 | 19篇 |
2016年 | 33篇 |
2015年 | 16篇 |
2014年 | 35篇 |
2013年 | 72篇 |
2012年 | 44篇 |
2011年 | 65篇 |
2010年 | 58篇 |
2009年 | 52篇 |
2008年 | 65篇 |
2007年 | 57篇 |
2006年 | 45篇 |
2005年 | 28篇 |
2004年 | 30篇 |
2003年 | 38篇 |
2002年 | 27篇 |
2001年 | 33篇 |
2000年 | 28篇 |
1999年 | 26篇 |
1998年 | 86篇 |
1997年 | 60篇 |
1996年 | 44篇 |
1995年 | 35篇 |
1994年 | 47篇 |
1993年 | 34篇 |
1992年 | 24篇 |
1991年 | 16篇 |
1990年 | 15篇 |
1989年 | 24篇 |
1988年 | 10篇 |
1987年 | 16篇 |
1986年 | 16篇 |
1985年 | 15篇 |
1984年 | 17篇 |
1981年 | 14篇 |
1980年 | 13篇 |
1979年 | 11篇 |
1978年 | 20篇 |
1977年 | 16篇 |
1976年 | 34篇 |
1975年 | 12篇 |
1974年 | 17篇 |
1969年 | 9篇 |
1966年 | 9篇 |
1954年 | 9篇 |
排序方式: 共有1586条查询结果,搜索用时 15 毫秒
1.
This paper presents results of investigations on the influence of loading rate on yielding and fracture behaviour of ferritic steels. The range of loading rates was below a certain level at which a special stress wave analysis is required. Concerning the yielding behaviour it was found, that the yield strength can be predicted by the model of thermally activated flow. The strain hardening dσ/dε appeared to be independent of strain rate, if adiabetic heating can be neglected. Concerning the fracture behaviour it is demonstrated that the Klc-T-curves are shifted to higher temperatures with increasing loading rate. The temperature shift could be correlated with the strain rate sensitivity m = d lnσ/d lnε. The ductile/brittle transition temperature increases with incrasing loading rate. For the upper shelf region crack resistance curves as a function of loading rate are presented. It is shown that the crack length can be determined using the key-curve-method. A slightly increasing tendency of the evaluated JR-curves was found. 相似文献
2.
3.
Stochastic models are presented for the structure and conditioning of pads used in chemical-mechanical polishing of wafers. First the one-dimensional distribution function of surface depth in the case of a conditioned solid pad is described. Then, for characterizing the structure of a foamed pad, the theory of random closed sets is applied. An important distributional characteristic of a random closed set, the linear contact distribution function, yields the contribution to surface depth resulting from pores. As a special example the Boolean model is considered. This leads to a formula that describes the variability of the surface of a conditioned foamed pad after a certain time. Simulations and experimental data show a good agreement between theory and reality. 相似文献
4.
5.
Andriy V. Kozytskiy Oleksandr L. Stroyuk Stepan Ya. Kuchmiy Volodymyr M. Dzhagan Dietrich R. T. Zahn Mykola A. Skoryk Vyacheslav O. Moskalyuk 《Journal of Materials Science》2013,48(21):7764-7773
Nanocrystalline ITO/ZnO films formed by porous zinc oxide microplatelets 1–3 μm in size and 100–200 nm in thickness, which consist of 30–50 nm ZnO crystallites, were sensitized to visible light by Cd x Zn1?x S nanocrystals deposited using the method of successive ionic layer adsorption and reaction (SILAR). The composition of Cd x Zn1?x S nanocrystals as well as the dependence between molar Cd(II) fraction in the films and the ratio of cadmium and zinc nitrate concentrations in solutions used for the SILAR procedure were determined by a combination of electron, Raman, and energy-dispersive X-ray spectroscopies. The photovoltage observed at illumination of the ITO/ZnO/Cd x Zn1?x S heterostructures by white light (λ >400 nm) in aqueous Na2S solution increases with a decrease of Cd(II) content proportionally to an increment in the conduction band potential of the Cd x Zn1?x S nanocrystals. The photocurrent density normalized to the light absorbance of the ITO/ZnO/Cd x Zn1?x S films increases by a factor of around four when the conduction band potential of Cd x Zn1?x S nanocrystals grows by 220 mV as a result of Cd(II) fraction changing from 1.0 to 0.62–0.67. The results show that Cd x Zn1?x S solid solutions are more advantageous sensitizers for the short-wavelength part of the sensitivity window of the liquid-junction solar cells (400–450 nm) than conventionally used cadmium sulfide. 相似文献
6.
S. Dietrich J.-M. Gebert G. Stasiuk A. Wanner K.A. Weidenmann O. Deutschmann I. Tsukrov R. Piat 《Composites Science and Technology》2012
Mechanical behavior of multi-phase composites is crucially influenced by volume fractions, orientation distributions and geometries of microconstituents. In the case of carbon–carbon composites manufactured by chemical vapor infiltration, the microconstituents are carbon fibers, pyrolytic carbon matrix, and pores. The local variable thickness of the pyrolytic carbon coating, distribution of the fibers and porosity are the main factors influencing the properties of these materials. Two types of fiber arrangements are considered in this paper: 2D laminated preform and random felt. The materials are characterized by determining their densities and their fiber distribution functions, by establishing types of pyrolytic carbon matrix present in the composites, and by studying the porosity. A technique utilizing X-ray computed tomography for estimation of the orientation distribution of the fibers and pores with arbitrary shapes is developed. A methodology based on the processing of microstructure images with subsequent numerical simulation of the coating growth around the fibers is proposed for estimation of the local thickness of the coating. The obtained information is appropriate for micromechanical modeling and prediction of the overall thermo-mechanical properties of the studied composites. 相似文献
7.
8.
9.
The authors demonstrate the application of a commercially available SiGe heterojunction bipolar transistor monolithic microwave integrated circuit technology to active mixers in future communication systems at 5.7 GHz and above. This technology can be used to realise circuits with less than 50 mW power consumption, conversion gains above 15 dB and small double sideband noise figures of 3.6 and 9.4 dB for 5.7 and 11.2 GHz Gilbert cell mixer circuits, respectively 相似文献
10.
Wolfram Witte Daniel Abou‐Ras Karsten Albe Gottfried H. Bauer Frank Bertram Christian Boit Rudolf Brüggemann Jürgen Christen Jens Dietrich Axel Eicke Dimitrios Hariskos Matthias Maiberg Roland Mainz Max Meessen Mathias Müller Oliver Neumann Thomas Orgis Stefan Paetel Johan Pohl Humberto Rodriguez‐Alvarez Roland Scheer Hans‐Werner Schock Thomas Unold Alfons Weber Michael Powalla 《Progress in Photovoltaics: Research and Applications》2015,23(6):717-733
The gallium gradient in Cu(In,Ga)Se2 (CIGS) layers, which forms during the two industrially relevant deposition routes, the sequential and co‐evaporation processes, plays a key role in the device performance of CIGS thin‐film modules. In this contribution, we present a comprehensive study on the formation, nature, and consequences of gallium gradients in CIGS solar cells. The formation of gallium gradients is analyzed in real time during a rapid selenization process by in situ X‐ray measurements. In addition, the gallium grading of a CIGS layer grown with an in‐line co‐evaporation process is analyzed by means of depth profiling with mass spectrometry. This gallium gradient of a real solar cell served as input data for device simulations. Depth‐dependent occurrence of lateral inhomogeneities on the µm scale in CIGS deposited by the co‐evaporation process was investigated by highly spatially resolved luminescence measurements on etched CIGS samples, which revealed a dependence of the optical bandgap, the quasi‐Fermi level splitting, transition levels, and the vertical gallium gradient. Transmission electron microscopy analyses of CIGS cross‐sections point to a difference in gallium content in the near surface region of neighboring grains. Migration barriers for a copper‐vacancy‐mediated indium and gallium diffusion in CuInSe2 and CuGaSe2 were calculated using density functional theory. The migration barrier for the InCu antisite in CuGaSe2 is significantly lower compared with the GaCu antisite in CuInSe2, which is in accordance with the experimentally observed Ga gradients in CIGS layers grown by co‐evaporation and selenization processes. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献