Multiobjective dynamic load-dispatching method for optimal operation of power systems

A new practical method is proposed which gives a quasi-optimal solution of the dynamic load-dispatching problem formulated by a multiconstraint multiobjective optimization problem. Here, the multiple constraints are rate reserve constraints and power flow ones, and the multiple objectives are fuel cost and CO₂ emission. The proposed method is an integration of the following three techniques: (1) “Group Dispatch Scheme,” which is developed by the authors, is used to satisfy a violated constraint easily. This scheme consists of three steps. The first step is to classify all generators into two groups. One is the group which should be more loaded to satisfy the violated constraint, and the other is the should-be less loaded group. The second step is to add some load to the former group, and to subtract the same load from the latter. The third step is to dispatch each group load to each groups generators, respectively; (2) the dynamic load-dispatching algorithm is used which provides, in practical time, quasi-optimal generation trajectories; (3) the conventional weighting parametric method is used to obtain a Pareto optimal solution of multiobjective problems. The effectiveness of the method is clarified by a computer simulation on the actual power system of Kansai Electric Power Company.     

Generation of multifrequency laser emission quasi equally spaced throughout the entire visible region

A circularly polarized, monochromatic laser beam is focused into a Raman cell, which contains hydrogen to generate rotational stimulated Raman emission. After linear polarization, this two-color (separated by 587 cm(-1)) laser beam is focused several times into a second Raman cell that is filled with hydrogen to generate a multifrequency laser emission. Many rotational and vibrational lines are generated efficiently by this multipass effect. Eighteen colors that are quasi equally spaced with a rather flat intensity distribution are generated throughout the entire visible region. The present multifrequency laser emission may be advantageously used for illumination in a higher-grade display, such as a laser light show.     

Chemical doping and improved flux pinning in Hg-based superconductors

Chemical doping of a small amount (0.020.3) of rhenium (Re) ion into HgBa₂Ca_n–1Cu_nO_y(n=14) has been studied. The flux pinning strength in these Hg-based superconductors is significantly enhanced compared to the undoped parent materials. Neutron diffraction analysis of representative samples (n=3) revealed that Re partially substitutes the Hg-site with octahedrally fully coordinated oxygen atoms, giving rise to the stabilization of Hg(Re)O layer and reduction of this blocking layer thickness. Associated with the expected hybridization of Re-5d and O-2p orbitals and possible metallization of the Hg(Re)O layer, the improved flux pinning behavior is considered to be caused by the decrease of the electromagnetic anisotropy and the enhanced interlayer superconducting coupling strength.     

Study on the hydrothermal drying technology of sewage sludge

Drying of sewage sludge is an effective way for treatment and utilization of sewage sludge,where reduction of energy consumption is one of the major technical challenges.So we experimentally investigated the possibility of the hydrothermal treatment.We have found that treatment of sewage sludge by saturated steam with the temperature of 190°C and pressure of 20 bar can dramatically improve the dehydration performance of the slurry like product.And the water content can be reduced down to about 55% by a mech...     

Chemical sensing by an electrical oscillator: Detection and quantification of cationic surfactants

A new chemical sensing system using an electrical oscillator has been developed. This sensing system measures the electrical ‘non-linearity’ at the surface of an electrode immersed in a test solution: a sinusoidal voltage is applied to the electrode and the higher harmonics of the output current are obtained by Fourier transformation. This sensing system has been used to detect and quantify surfactant molecules in solutions. The relative intensity P₂/P₁ of the peaks of the second (P₂) and first (P₁) harmonics in the output current was found to be linearly correlated with the logarithms of the concentrations of cationic surfactants such as cetylpyridium bromide (CPB) and cetyl-N,N,N-trimethylammonium bromide (CTAB), but not with those of the anionic surfactant sodium dodecyl sulfate (SDS) or the neutral surfactant Triton X-100. The reproducibility of this sensing system was shown to be excellent.     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.

     

In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

GaN surface stoichiometry and growth kinetics in MOVPE were studied by in-situ spectroscopic ellipsometry. The effect of MOVPE conditions on both the surface stoichiometry and growth kinetics was investigated. The surface stoichiometry, such as N-rich, Ga-rich and Ga-excess surfaces, was monitored, and was drastically changed by the variation of the NH₃ partial pressure. When the TMG supply was interrupted during the growth, the layer-by-layer decomposition/revaporation was observed in H₂/NH₃ ambient. The decomposition rate was measured as a function of the NH₃ flow rate at the conventional epilayer growth temperatures (1050–1140 C). The decomposition rate was decreased with the increase in the N coverage on the GaN surface. it was found that the surface stoichiometry is a very important parameter for the control of the MOVPE growth kinetics.     

A 62-ns 16-Mb CMOS EPROM with voltage stress relaxation technique

To meet the increasing demand for higher-density and faster EPROMs, a 16-Mb CMOS EPROM has been developed based on 0.6-μm N-well CMOS technology. In scaled EPROMs, it is important to guarantee device reliability under high-voltage operation during programming. By employing internal programming-voltage reduction and new stress relaxation circuits, it is possible to keep an external programming voltage V_pp of 12.5 V. The device achieves a 62-ns access time with a 12-mA operating current. A sense-line equalization and data-out latching scheme, made possible by address transition detection (ATD), and a bit-line bias circuit with two types of depletion load led to the fast access time with high noise immunity. This 16-Mb EPROM has pin compatibility with a standard 16-Mb mask-programmable ROM (MROM) and is operative in either word-wide or byte-wide READ mode. Cell size and chip size are 2.2 μm×1.75 μm and 7.18 mm×17.39 mm, respectively     

A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology

An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration.