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1.
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.  相似文献   
2.
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions  相似文献   
3.
A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure  相似文献   
4.
When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.  相似文献   
5.
We propose and analyze new finger assignment techniques that are applicable for RAKE receivers in the soft handover (SHO) region. Specifically, extending the results for the case of two-base station (BS), we consider the multi-BS situation, attack the statistics of several correlated generalized selection combining (GSC) stages, and provide closed-form expressions for the statistics of the output signal-to-noise ratio (SNR). By investigating the tradeoff among the error performance, the average number of required path estimations/comparisons, and the SHO overhead, we show through numerical examples that the new schemes offer commensurate performance in comparison with more complicated GSC-based diversity systems while requiring a smaller estimation load and SHO overhead.  相似文献   
6.
ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.  相似文献   
7.
A neural network-based power system stabilizer (neuro-PSS) is designed for a generator connected to a multi-machine power system utilizing the nonlinear power flow dynamics. The use of power flow dynamics provides a PSS for a wide range of operation with reduced size neural networks. The neuro-PSS consists of two neural networks: neuro-identifier and neuro-controller. The low-frequency oscillation is modeled by the neuro-identifier using the power flow dynamics, then a generalized backpropagation-through-time (GBTT) algorithm is developed to train the neuro-controller. The simulation results show that the neuro-PSS designed in this paper performs well with good damping in a wide operation range compared with the conventional PSS  相似文献   
8.
A compact dipole antenna for the terrestrial digital multimedia broadcasting (TDMB) application is presented. The length of the antenna is about 0.06λ at the TDMB resonance frequency of 190 MHz. Miniaturization of the antenna is achieved by using meander structures and lumped elements. The proposed antenna has two resonance frequencies and covers the TDMB band from 174 MHz to 216 MHz in Korea. The antenna has good impedance bandwidth and radiation characteristics for the TDMB. The experimental results of the designed dipole antenna are presented and analyzed.  相似文献   
9.
Characterisation of a BioFET for detection of albumin in a mixture of human urine is presented. To avoid electrolyte effect of the urine, it was measured in PBS (phosphate buffer saline) at a fixed pH after albumin binding. The drain current was modulated by the albumin bound to the anti-albumin immobilised on the gate surface of the BioFET. The current variation ratio was likely to be proportional to the concentration of the albumin in the range 50-250 mg/1. The results show the feasibility of the BioFET as a urinary albumin sensor.  相似文献   
10.
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.  相似文献   
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