Development of `information collection and delivery sensor basesystem' for large-scale power systems

The authors present a real-time database system capable of collecting and delivering a large amount of information accurately at a high speed and by a simple method. This system has a microprocessor unit (MPU) for each private communication line around the main memory and coordinates the independent parallel operation for a number of these MPUs with the main memory access operation, using a fixed cyclic scan method and having all the MPUs perform multi-operation. Many advantages can be expected when this method is adopted, especially for the monitoring and control of power systems. Degradation of the system can be avoided during an information rush due to accidents, and it can be easily extended when adding to or expanding the power facilities in the future. Excellent daily maintainability can be assured, and a low overall cost can be expected     

Advanced Wireless Access System

The key words for the future telecommunications are personalization, multi-media services and high accessibility to the network. These trends naturally lead to radio media application to access links. In this sense, this paper proposes an advanced wireless access system with a capacity supporting broadband video and data services.Concept of the system can be defined as a new radiocommunication category with advantages of both fixed and mobile systems.The system is designed to transport ATM-based signals using SHF (or EHF) bands to wireless terminals, interconnected with optical fibers at the network side. The basic system configuration is presented as well as examples of system parameters.For radio aspects the maximum service coverages of the radio base stations are calculated based on availability consideration. Preferred frequency bands for actual operation are also discussed.     

Three-Dimensional Packaging Technology for Stacked DRAM With 3-Gb/s Data Transfer

A 3-D packaging technology is developed for stacked dynamic random access memory (DRAM) with through-silicon vias (TSVs). Eight different dry etchers were evaluated for deep Si etching. Highly doped poly-Si TSVs were used for vertical traces inside silicon and interconnection between DRAM chips to realize a DRAM-compatible process. Through optimization of process conditions and layout design, a fast poly-Si filling has been obtained. The entire packaging was carried out at the wafer level by using smart chip connection with feedthrough interposer (FTI) technology. A new bump and wiring structure for the FTI has also been developed for fine-pitch and low-cost bonding. Normal operation during DRAM read/write was confirmed on a 512-Mb DRAM with TSVs, with an I/F chip as a memory controller. Simulation and measurement of the transfer function of the FTI wiring showed a 3-Gb/s/pin data transfer capability.     

Direct and Indirect Exciton Dynamics in Few‐Layered ReS2 Revealed by Photoluminescence and Pump‐Probe Spectroscopy

Atomically thin‐layered ReS₂ with a distorted 1T structure has attracted attention because of its intriguing optical and electronic properties. Here, the direct and indirect exciton dynamics of a three‐layered ReS₂ is investigated by polarization‐resolved transient photoluminescence (PL) and ultrafast pump‐probe spectroscopy. The various time scales of the decay signals of the time‐resolved PL (<10 ps), with monitoring of the populations of electron–hole pairs (exciton), and the transient differential reflectance (≈1 and 100 ps), with monitoring of the populations of electrons and/or holes in the excited states, are observed. These results reveal the characteristic exciton dynamics: rapid relaxation of direct excitons (electron–hole pairs) and slow relaxation of the momentum‐mismatched indirect excitons accompanied by a one‐phonon emission process. These findings provide important information regarding the indirect bandgap nature of few‐layered ReS₂ and its characteristic exciton dynamics, boosting the understanding of the novel electronic and optical properties of atomically thin‐layered ReS₂.     

A novel ferromagnetic thermo-stent for plaque stabilization that self-regulates the temperature

The purpose of this study is to investigate the vascular wall with a thermally self-regulating, cylindrical stent made of a low Curie temperature ferromagnetic alloy. Physiologic saline was circulated in the silicone model vessel implanted with the stent. The stent-temperature remained nearly constant for variable saline flows, saline temperatures, and magnetic flux densities. Stent implants of this type in human blood vessels could potentially enable thermotherapy and temperature determination without catheterization.     

Further Characterization of 394-GHz Gyrotron FU CW GII with Additional PID Control System for 600-MHz DNP-SSNMR Spectroscopy

A 394-GHz gyrotron, FU CW GII, has been designed at the University of Fukui, Japan, for dynamic nuclear polarization (DNP)-enhanced solid-state nuclear magnetic resonance (SSNMR) experiments at 600-MHz ¹H resonant frequency. After installation at the Institute for Protein Research (IPR), Osaka University, Japan, a PID feedback control system was equipped to regulate the electron gun heater current for stabilization of the electron beam current, which ultimately achieved stabilization of output power when operating in continuous wave (CW) mode. During exploration to further optimize operating conditions, a continuous tuning bandwidth of approximately 1 GHz was observed by varying the operating voltage at a fixed magnetic field. In the frequency range required for positive DNP enhancement, the output power was improved by increasing the magnetic field and the operating voltage from their initial operational settings. In addition, fine tuning of output frequency by varying the cavity cooling water temperature was demonstrated. These operating conditions and ancillary enhancements are expected to contribute to further enhancement of SSNMR signal.     

A Study of Mutual Coupling between Vertical Grounding Electrodes

This paper investigates the mutual grounding impedance between vertical grounding electrodes based on field measurements and FDTD simulations. In the case of vertical electrodes, the mutual impedance between the electrodes is almost completely independent of the electrode length, and thus the induced voltage is nearly constant as the electrode length becomes longer. This characteristic is different from that of an overhead conductor, where the electromagnetic‐induced voltage is proportional to the conductor length. The greater the separation distance between the electrodes, the smaller the induced voltage, as in the case of an overhead conductor. The propagation speed increases as the separation increases. It is found that the speed is not necessarily proportional to the inverse of the relative permittivity of the earth.     

Performance Evaluation of Magnetostrictive Small Wind Turbines Using Fe–Co Alloy–Based Clad Sheets

In this study, the Fe–Co alloy is combined with cobalt ferrite (CoFe₂O₄) and nickel (Ni) to form Fe–Co/CoFe₂O₄ and Fe–Co/Ni clad sheets and their energy-harvesting performance is evaluated. The Fe–Co/CoFe₂O₄ clad sheet exhibits an output voltage of 4.229 mV and an output power of 6.89 nW at a wind speed of 10 m s⁻¹. The energy-harvesting performance of both these clad sheets cannot be quantitatively compared owing to their different thicknesses, which result in varying volume and distance from the neutral plane. Nevertheless, the values of output voltage and power for Fe–Co/CoFe₂O₄ are higher than those for Fe–Co/Ni (2.107 mV and 0.294 nW).     

PLL-based BiCMOS on-chip clock generator for very high-speedmicroprocessor

Described is a phase-locked loop (PLL)-based BiCMOS on-chip clock generator (PCG), which is used to generate an internal clock synchronized to a reference clock from outside the chip. In order to obtain a very wide operation bandwidth, it is proposed that the PCG include a compensation circuit for voltage-controlled oscillator (VCO) operation. The compensation circuit varies the oscillation bandwidth of the VCO according to the reference clock frequency, preventing the expected oscillation frequency from being outside the oscillation bandwidth. The PCG is designed and fabricated with 1.0 μm BiCMOS technology, and it achieves an operation bandwidth of 3 to 90 MHz