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1.
Electromagnetic interference (EMI) noises generated in power converters are diffused on the surface of conductors. This means influences occur from radiated EMI noises emitted from power transmission lines as well as conducted EMI noises transmitted from them. EMI noises diffusing on the surface of conductors are generally difficult to control using conventional concentrated constant theory. Thus, a new approach based on distributed constant circuit theory is needed in order to control EMI noises. A power converter structure to control EMI noises using multilayer power printed circuit technology is studied in this paper. A structure which can control EMI noises should simultaneously satisfy two conditions, i.e., one to shut down and one to attenuate EMI noises. The structure satisfying these conditions is studied through simulations using the Transmission-Line Modeling Method. The simulations show that the diffusion of EMI noises is controlled by dividing the flow of currents produced by EMI noises into the horizontal and perpendicular directions. That is, the horizontal current flow is controlled inside using the differences in the resistance produced from differences between inner and outer diameter of power transmission lines and the perpendicular current flow can be controlled by properly designing the thickness of the dielectric layer sandwiched between P-and N-power transmission lines with the symmetrical structure. Moreover, it is confirmed by simulations and experiments that the attenuation of EMI noises is affected by the width of the power transmission lines. It is expected that the results obtained in this paper can provide important rules when designing power converters with EMI noise control functions which use the multilayer power printed circuit technology.  相似文献   
2.
Although brushless resolvers have been used widely as angular position transducers, they are expensive due to their intricate construction, involving a rotary transformer to supply the exciting coils wound on the rotor poles with the current. It is shown theoretically in this paper that the resolver without rotary transformer or brushes can be realized by simple construction, which consists of the stator core with both 4-poles exciting windings and 2-poles output ones and the rotor core carrying no windings. In this resolver the rotor core has minimum gap at one side and a maximum gap at another side of the diameter. It is characterized by an outer surface form that makes the fluctuation part of gap permeance very in proportion to cos θ, where θ represents the angular position of a point in the air gap with respect to the origin on the rotor, the point of minimum air gap. The method determining the rotor form to embody the aforementioned gap permeance variation is also shown. It has been confirmed not only by simulation but also experiment that the 2-phase output voltages of a model designed based on the theory have sinusoidal waveforms with very small harmonic contents. Moreover, the rotor position detected by processing the output voltages through the conventional resolver/digital converter was within acceptable engineering accuracy.  相似文献   
3.
The advancement of ultralong-haul transmission technology has dramatically enhanced the all-optical reaches. However, the actual situations of installed fiber and sites for terrestrial network often prevent implementing a purely transparent network, and thus, opaque reshaping retiming regenerating (3R) regeneration is required to guarantee optical signal reachability. Since 3R regenerators based on optical/electrical/optical conversion tend to dominate the total network costs, an efficient network design method that allocates a minimum number of 3R regenerators to optimum locations is essential to build a cost-effective photonic network. In this paper, we propose such a network-dimensioning method by combining the advantages of link-based and path-based design approaches. It first guarantees optical signal reachability for any possible traffic demand in each segmented linear link. After combining all the links, excessive regenerators are eliminated based on the optical signal quality check with -factor calculation for each wavelength path. A trial design of a large-scale mesh network demonstrated a significant cost savings of more than 30% in comparison with a conventional link-based design. In the trial, the impact of fiber loss coefficient over the total network cost was investigated quantitatively, addressing the importance of such quantitative modeling and analysis.  相似文献   
4.
Certified email is a system which enables a sender to prove a receiver’s receipt of email. Such a system can be used for applications related to electronic commerce on the Internet. This paper considers a situation where a sender or a receiver wants to change his/her mind due to the change of mail content value (e.g., stock, auction, gambling) during the transaction. We point out that no traditional certified email systems have been designed for such a case, thus one of the participants can be at a disadvantage. To avoid this problem, we propose an evenhanded certified email system in which each participant can change his/her choice, either cancel or finish the transaction, at any time during the transaction.
Kouichi SakuraiEmail:
  相似文献   
5.
In this short paper,we have treated the aerodynamic performance of micro downwind rotor with coning soft blades experimentally.The test wind rotor has the tip diameter of 1.5 m and three two-dimensional NACA0018 blades of 0.15 m chord whose material is light,soft and pliable foam plastic for perfect safety.From the wind tunnel test,it is realized that the performance is manageable by the coning angle of the rotor blade.In the present case,an improvement of the performance in lower wind speeds is achieved by...  相似文献   
6.
Atomic-resolution transmission electron microscopy has largely benefited from the implementation of aberration correctors in the imaging part of the microscope. Though the dominant geometrical axial aberrations can in principle be corrected or suitably adjusted, the impact of higher-order aberrations, which are mainly due to the implementation of non-round electron optical elements, on the imaging process remains unclear. Based on a semi-empirical criterion, we analyze the impact of residual aperture aberrations on the quality of exit-plane waves that are retrieved from through-focal series recorded using an aberration-corrected and monochromated instrument which was operated at 300 kV and enabled for an information transfer of ∼0.05 nm. We show that the impact of some of the higher-order aberrations in retrieved exit-plane waves can be balanced by a suitable adjustment of symmetry equivalent lower-order aberrations. We find that proper compensation and correction of 1st and 2nd order aberrations is critical, and that the required accuracy is difficult to achieve. This results in an apparent insensitivity towards residual higher-order aberrations. We also investigate the influence of the detector characteristics on the image contrast. We find that correction for the modulation transfer function results in a contrast gain of up to 40%.  相似文献   
7.
文中给出了一种用于实现多分辨率运动估算算法后阶段任务的改进的树结构。在一个简单的RISC类型核控制下,它能够完成整个运动估值过程中除粗分辨率精度运动矢量搜索之外的所有后阶段子任务。包括运动矢量优化(搜索)在内的多任务是通过二叉树最底层叶节点上的多功能处理单元和可以拆分成子树的加法树来实现的。此外,运算单元寄存器堆的设计使能在二维方向上复用图像数据,完全避免了同一类数据从存储器中重复读取,从而实现了最小的存储器访问带宽,并有助于减小存储功耗。  相似文献   
8.
Electrical activity and energy levels as well as diffusion properties of nickel in silicon have not yet been reliably established. In this paper, we investigated the diffusion and the electrical properties of nickel in silicon to confirm that nickel is electrically active and introduces one acceptor and one donor level by combined measurements of Hall coefficient and DLTS, and measurements of the distribution of electrically active nickel in various silicon diodes by DLTS. The former experiments show that bothn- andp- type silicon are compensated by nickel and that nickel introduces an acceptor level ofE c-0.47 ± 0.04 eV and a donor level ofE v +0.18 ± 0.02 eV. The concentrations of these two levels are almost identical over the diffusion temperatures from about 800 to 1100° C, indicating that these donor and acceptor levels are due to different charge states of the same nickel center. In the distribution measurements of electrically active nickel in silicon diodes, we inspected how nickel can be observed by DLTS. It was found that the nickel diffusion intop- n junction is rather complicated, the distribution profiles of nickel in the vicinity of thep- n junction being markedly influenced by an additional heating at elevated temperatures after the nickel diffusion. This gives evidence that the difference in silicon devices used in various studies could give rise to different results.  相似文献   
9.
Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc IV characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10–40 GHz showed the conductance modulation by drain–source voltage. These results indicate the existence of plasma wave interactions.  相似文献   
10.
A method of Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al2O3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 1016-1018 cm−3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al2O3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al2O3-PDA.  相似文献   
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