Synthesis and Physical Properties of Mn Doped ZnO Dilute Magnetic Semiconductor Nanostructures

Mn doped ZnO nanostructures have been prepared using low temperature simple, quick, and versatile synthesis approach. The structural, microstructural, and vibrational investigations reveal that as prepared nanostructures with low Mn doping concentration have single hexagonal phase and are grown along the preferred c-axis. The X-rays photoelectron spectroscopy demonstrates that the Mn ions are in mixed oxidation states for high doping concentration of Mn, while are in 2+ oxidation state for low concentration into ZnO lattice. The photoluminescence spectrum (PL) exhibits a significant red-shift of 22 nm in the optical band gap of doped ZnO and shows the improved luminescence properties, which makes it potential for its use in the photocatalyst, optoelectronics and solar cell nanodevices. Furthermore, the magnetic measurement of Mn doped ZnO nanostructures exhibits the ferromagnetism at room temperature.     

Influence of Y~(3+),Yb~(3+),Gd~(3+) cations on structural and electromagnetic properties of CuFe_2O_4 nanoferrites prepared via one step sol-gel method

Rare earths(REs) play a key role in distorting spinel structure by creating some defects at the lattice sites and make them suitable for magnetodielectric applications.In the present study,the nanoferrites of CuRE_(0.02)Fe_(1.98)O_4,where REs=Y~(3+),Yb~(3+),Gd~(3+),were prepared using one step sol-gel method.The prepared samples are copper ferrite(CFO),yttrium doped copper ferrite(Y-CFO),ytterbium doped copper ferrite(Yb-CFO) and gadolinium doped copper ferrite(Gd-CFO),respectively.The single-phase structure of all the REs doped nanoferrites was determined by X-ray diffraction(XRD) analysis.The porosity,agglomerations and grain size of the REs doped copper ferrite were examined using field emission scanning electron microscopy(FESEM) analysis.Fourier transform infrared spectroscopy(FTIR)elaborates the phase formation and environmental effects on the REs doped nanoparticles(NPs).The recorded room temperature M-H loops from a vibrating sample magnetometer(VSM) elucidate the magnetic properties of the REs doped spinel nanoferrites.The magnetic saturation(M_s) was calculated in the range of 23.08 to 51.78 emu/g.The calculated coercivity values(272.6 to 705.60 Oe) confirm the soft magnetic behavior of REs doped copper ferrites.Furthermore,the electromagnetic and dielectric properties were assessed using a Vector network analyzer(VNA) from 1 to 6 GHz.The permeability,permittivity,dielectric tangent loss and electric modulus of the REs doped spinel ferrites illustrate that the prepared NPs may be suitable for microwave and high frequency applications.     

Simple,fast, and accurate parametric modeling of the coupling and external quality factor for microstrip filter design using active learning method

In the realization step of any microstrip filter according to the required electrical characteristics, coupling factors and external quality factor (Q_ext) are related to the physical parameters of the structure using time consuming full wave simulations. This paper presents a simple, fast, and accurate parametric model of the coupling between the coupled square open loop resonators (SOLRs) and Q_ext of these resonators versus physical parameters of the structure and substrate characteristics utilizing active learning method (ALM). In the modeling process the multi-dimensional functions of coupling factor and Q_ext are broken down into their simpler aspects, their behaviors are extracted and then final model will be constructed by combining these simpler aspects. ALM allows the overall model for coupling factor and Q_ext to be developed through the use of small number of initial data. Once the modeling process is completed it provides a fast and accurate prediction of the required physical parameters for a given coupling factor and Q_ext. Using the constructed model for a distinct SOLR, which its accuracy was validated by comparison with the full wave simulation results a filter was designed and fabricated. Good agreement between measured and simulated response confirms the accuracy of the modeling procedure.     

Inter-cell interference in multi-tier heterogeneous cellular networks: modeling and constraints

Telecommunication Systems - Interference is the main source of capacity limitation in wireless networks. In some medium access technologies in cellular networks, such as OFDMA, the allocation of...     

Novel direct designs for 3-input XOR function for low-power and high-speed applications

Novel direct designs for 3-input exclusive-OR (XOR) function at transistor level are proposed in this article. These designs are appropriate for low-power and high-speed applications. The critical path of the presented designs consists of only two pass-transistors, which causes low propagation delay. Neither complementary inputs, nor V _DD and ground exist in the basic structure of these designs. The proposed designs have low dynamic and short-circuit power consumptions and their internal nodes dissipate negligible leakage power, which leads to low average power consumption. Some effective approaches are presented for improving the performance, voltage levels, and the driving capability and lowering the number of transistors of the basic structure of the designs. All of the proposed designs and several classical and state-of-the-art 3-input XOR circuits are simulated in a realistic condition using HSPICE with 90 nm CMOS technology at six supply voltages, ranging from 1.3 V down to 0.8 V. The simulation results demonstrate that the proposed circuits are superior in terms of speed, power consumption and power-delay product (PDP) with respect to other designs.     

An optimal algorithm for rectilinear steiner trees for channels with obstacles

The channel rectilinear Steiner tree problem is to construct an optimal rectilinear Steiner tree interconnecting n terminals on the upper shore and the lower shore of a channel without crossing any obstacles inside the channel. However, intersecting boundaries of obstacles is allowed. We present an algorithm that computes an optimal channel rectilinear Steiner tree in O(F₁(k)n + F₂(k)) time, where k is the number of obstacles inside the channel and F₁ and F₂ are exponential functions of k. For any constant k the proposed algorithm runs in O(n) time.     

A highly efficient nanostructured quinary photocatalyst for hydrogen production

Semiconductor photocatalysts play a crucial role when it comes to environmental issues such as global warming, pollutant degradation, fuel shortage, and energy crisis. In this paper, three nanostructured compound (3‐, 4‐, and 5‐component) semiconductor materials were synthesized through a facile one‐pot hydrothermal method, and were applied as alloy photocatalysts to generate hydrogen fuel via a water photo‐splitting process. Nitrogen adsorption–desorption isotherms revealed that the synthesized materials were all mesoporous and the highest surface area was witnessed for Ag‐doped quinary photocatalyst, viz. Cd_0.1Zn_0.87Sn_0.01Ag_0.01S (CZTSS). This heterogeneous photocatalyst exhibited a maximum performance in evolving hydrogen gas. The superiority of CZTSS was justified in terms of its greater surface area, higher conduction band and its silver plasmon resonance, enhancing the light absorption at long wavelengths. Field emission scanning electron microscopy revealed a spectacular nanostructure for this photocatalyst that was comprised of nanoparticles, platelets, and microspheres attached together. Energy dispersive X‐ray (EDX) analyses of the CZTSS also proved the synthesis of the quinary photocatalyst, having different compositions in distinct zones. Copyright © 2014 John Wiley & Sons, Ltd.     

Ten-inch molecular beam epitaxy production system for HgCdTe growth

Growth of Hg_1−xCd_xTe by molecular beam epitaxy (MBE) has been under development since the early 1980s at Rockwell Scientific Company (RSC), formerly the Rockwell Science Center; and we have shown that high-performance and highly reproducible MBE HgCdTe double heterostructure planar p-on-n devices can be produced with high throughput for various single- and multiplecolor infrared applications. In this paper, we present data on Hg_1−xCd_xTe epitaxial layers grown in a ten-inch production MBE system. For growth of HgCdTe, standard effusion cells containing CdTe and Te were used, in addition to a Hg source. The system is equipped with reflection high energy electron diffraction (RHEED) and spectral ellipsometry in addition to other fully automated electrical and optical monitoring systems. The HgCdTe heterostructures grown in our large ten-inch Riber 49 MBE system have outstanding structural characteristics with etch-pit densities (EPDs) in the low 10⁴ cm⁻² range, Hall carrier concentration in low 10¹⁴ cm⁻³, and void density <1000 cm². The epilayers were grown on near lattice-matched (211)B Cd_0.96Zn_0.04Te substrates. High-performance mid wavelength infrared (MWIR) devices were fabricated with R₀A values of 7.2×10⁶ Ω-cm² at 110 K, and the quantum efficiency without an antireflection coating was 71.5% for cutoff wavelength of 5.21 μm at 37 K. For short wavelength infrared (SWIR) devices, an R₀A value of 9.4×10⁵ Ω-cm² at 200 K was obtained and quantum efficiency without an antireflection coating was 64% for cutoff wavelength of 2.61 μm at 37 K. These R₀A values are comparable to our trend line values in this temperature range.     

Fetal electrocardiogram modeling using hybrid evolutionary firefly algorithm and extreme learning machine

Multidimensional Systems and Signal Processing - Extraction of fetal electrocardiogram (FECG) from the abdominal region of the mother’s skin is challenge task due to the high overlapping of...