Electron drift mobility model for devices based on unstrained andcoherently strained Si1-xGex grown on <001>silicon substrate

The electron drift mobility for unstrained and coherently strained Si_1-xGe_x grown on a <001> silicon substrate is analytically obtained for Ge fractions less than 30%. The method is based on the following two assumptions: the conduction bands of the unstrained alloy are Si-like for Ge fraction less than 30%, and in the case of the coherently strained alloy, strain-induced energy shifts occur in the conduction band valleys. The shifts in energy yield two different mobility values: one corresponding to the growth plane with a value larger than the unstrained mobility, and the other parallel to the growth direction and correspondingly smaller in value. In comparison to silicon, the results show a degradation of both the unstrained mobilities for doping levels up to 10¹⁷ cm^-3. Beyond this doping level, the strained mobility component parallel to the growth direction becomes slightly larger than the mobility of silicon     

Microwave CMOS-device physics and design

This paper discusses design issues and the microwave properties of CMOS devices. A qualitative understanding of the microwave characteristics of MOS transistors is provided. The paper is directed toward helping analog IC circuit designers create better front end radio-frequency CMOS circuits. The network properties of CMOS devices, the frequency response, and the microwave noise properties are reviewed, and a summary of the microwave scaling rules is presented     

Drift hole mobility in strained and unstrained doped Si1-xGex alloys

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10¹⁵-10¹⁹ cm^-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×10¹⁹ cm^-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon     

Fatty acids in plasma and red cell membranes in normal humans

A detailed study was made of the fatty acid composition of plasma triglycerides, free fatty acids, phospholipids, red cell total phospholipids, phosphatidylcholine and phosphatidylethanolamine in 32 normal males and 18 normal females. No sex differences could be detected. There were substantial differences in the compositions of the various fractions and long-chain polyunsaturated fatty acids were particularly important in the red cells.     

Cortisol in physiological concentrations acts within minutes to modify effects of prolactin and growth hormone on prostaglandin secretion: importance of effect in modulating cellular responses to calcium and cyclic nucleotides

We propose that intracellular prostaglandins (PGs) are essential for the final expression of the effects of second messengers in most cells. We suggest that the amounts of PGs required are very small (in the picomolar range) and are much lower than those used in most current PG studies. We suggest that while therapeutic levels of inhibitors of PG synthetase may be adequate to block the overflow of PGs from cells, they are in most cases unlikely to reduce intracellular PGs sufficiently to test the role of such PGs. We propose that there is a basal level of PG synthesis unaffected by hormones but that above this level PG synthesis is regulated by the interplay between physiological levels of cortisol, prolactin, growth hormone and thyroid hormones. For the most part prolactin seems to stimulate PG synthesis and cortisol to inhibit it: cortisol has, however, no inhibitory effect on basal PG synthesis. In reducing prolactin-stimulated PG synthesis cortisol is 1000-2000 times more potent than indomethacin on a molar basis. We suggest that the regulation of intracellular PG levels is the mechanism of the so-called "permissive" actions of these hormones. These concepts could prove important in the understanding of many aspects of physiology and pathophysiology including diurnal and seasonal changes in hormone responsiveness. They are also relevant to the use of established drugs and the design of new ones.     

Altered arachidonic acid content in polymorphonuclear and mononuclear cells from patients with allergic rhinitis and/or asthma

We previously have found that monocytes from patients with allergic rhinitis and/or asthma produce less PGE₂ than cells from normal subjects in response to a histamine-induced lymphokine. In order to investigate this observation further, we measured the fatty acid content in the total phospholipids derived from the plasma, red cells, buffy coat cells, neutrophils, monocytes and lymphocytes of 27 allergic patients and 21 normal controls. There were no substantial differences between atopics and normals in the fatty acid analyses carried out for plasma and red cells. However, linoleic acid (18∶2n−6) levels were elevated significantly in the buffy coat fraction, while arachidonic acid (20∶4n−6) levels were reduced. Measurement of fatty acid levels after fractionation of the buffy coat population into neutrophils and monocytes yielded similar elevations in 18∶2n−6 and reduced 20∶4n−6. In contrast, lymphocytes appeared to have the reverse pattern, i.e., significantly reduced 18∶2n−6 and elevated 20∶4n−6 levels. These data suggest that atopic leukocytes may have altered essential fatty acid metabolism.     

Optical power division in a multimode-waveguide intersection

Theorètical and experimental results are presented for a multimode, optical-waveguide intersection fabricated by an ion-exchange technique. Experimental results agree well with the simple ray analysis. The device has application as a multimode power divider or noncoupling `crossover?.     

An analytical model for floating-gate MOSFET including the effectsof the overlapping capacitance

An analytical model for the current-voltage characteristics of a floating-gate MOSFET are developed. The effects of the overlapping capacitance are included. The model was tested on experimental data obtained from fabricated devices. Good agreement was observed between measurement results and the model     

Lattice mobility of holes in strained and unstrained Si1-xGex alloys

Results of the lattice drift mobility in strained and unstrained SiGe alloys are reported for Ge fractions, 0.0⩽x⩽1.0. The mobilities are calculated using acoustic, optical, and alloy scattering mechanisms. Due to the strain-induced symmetry reduction in the band structure of Si_1-xGe_x, the mobility is found to be a tensor with two distinct components parallel and perpendicular to the growth plane. Assuming that the scattering mechanisms are independent of the strain, the strained mobility increases exponentially with increasing Ge content, for x=0.3