Study on conductivity and redox stability of iron orthovanadate

FeVO₄ was synthesised by conventional solid state technique. Impedance measurements using a silver electrode were unsuccessful due to a solid state reaction between FeVO₄ and Ag, forming α-AgVO₃ and α-Fe₂O₃ at the interface. Impedance measurements, with a platinum electrode, reaffirmed that FeVO₄ exhibits semiconductor behaviour in air. In a reducing atmosphere, 5% H₂/Ar, high electronic conductivity, from 1 S cm⁻¹ at 300 °C to 2 S cm⁻¹ at 700 °C, was observed with an activation energy of 0.13(1) eV. X-ray diffraction, thermogravimetric analysis and differential scanning calorimetry data determined that the change in electronic conductivity was due to the degradation of the material into FeV₂O₄ and α-Fe₂O₃. It is believed that the conduction was due to electron hopping between vanadium d-orbitals. Neither FeVO₄ nor FeV₂O₄ are deemed suitable as anode materials for solid oxide fuel cells, due to redox instability.     

Cavity-Enhanced IR Absorption in Planar Chalcogenide Glass Microdisk Resonators: Experiment and Analysis

Planar microdisk optical resonators fabricated from Ge₂₃Sb₇S₇₀ chalcogenide glass on a silicon substrate are applied for cavity-enhanced spectroscopic measurement of chemical molecular absorption fingerprint. A 0.02 cm^{- 1} detection limit for these devices is demonstrated. This detection limit represents a threefold improvement as compared to a straight waveguide sensor, while the physical device length is reduced by 40-fold. The reduction in device footprint with enhanced sensitivity makes the structure attractive for ldquosensor-on-a-chiprdquo device applications. We also present a design optimization approach for cavity-enhanced IR absorption spectroscopy using traveling-wave resonators, which indicates that further performance improvement can be achieved in optimally coupled, low-loss resonant cavities.     

Stress induced gate–drain leakage current in ultra-thin gate oxide

Ultra-thin gate oxide reliability, in large area MOSFETs, can be monitored by measuring the gate current when the substrate is depleted. When the channel length is scaled down, the tunneling current associated with the source/drain extension region (SDE) to the gate–overlap regions can dominate the gate current. In N-MOSFETs, as a function of the negative gate voltage two components of the gate–drain leakage current should be considered, the first for V_FB < V_G < 0 V and the second for V_G < V_FB. These components are studied in this work before and after voltage stresses. The aim of this work is to see whether this gate–drain current can be used to monitor the oxide degradation above or near the source and/or drain extension region in N-MOSFETs. It is important because the most serious circuit-killing breakdown occurs above or near the drain (or source) extension region. Finally, we show that it is necessary, before explaining the gate LVSILC curves obtained after stresses on short-channel devices, to verify which is the dominate current at low voltage.     

Architecture of a Memory Manager for an MPEG-2 Video Decoding Circuit

A study of the MPEG-2 video decoding standard in Main Profile @ Main Level has been performed, comparing the different solutions existing for the VLSI implementation of the basic functions (Huffman decoding, IDCT...) included in the standard. Afterwards, a new dynamically configurable architecture is proposed for the memory manager, which is necessary to deal with the large data flow inside the decoder. It is aimed at interfacing the external memory, arbitrating the access requests coming from the different decoding units and allowing generic memory requests through the definition of virtual addresses. It is shown that, by means of a particular data organization, the circuit requires an external memory, which is a 2-MB DRAM in fast page or EDO mode, accessible via a 64-bit bus. The memory manager works at 27 MHz and allows a real-time decoding for MP @ ML bitstreams. It has been synthesized in a 0.8-m two-metal CMOS technology and presents a total area of 5.4 mm2 for 6500 gates.     

A synthesis methodology for AMS/RF circuit reliability: Application to a DCO design

Circuit ageing degradation is becoming worse in advanced technologies, while application fields like military, medical and energy demand more reliability. Thus, reliability is one of the most important challenges of the semiconductor industry [1]. In this work, we review the physical ageing phenomena, their simulation model, and how they can be avoided. Then, we propose a synthesis methodology composed of classical circuit optimization with the reliability analysis in earlier stages. Also, the variability of the integration process technology is taken into account. We compare a classical and a reliable designed digital controlled oscillator (DCO) in order to show a reduction of 16% in the oscillation frequency ageing degradation. In this way, the reliable design makes the circuit lifetime five times longer, if we fix the maximum frequency ageing degradation at 2.0%. Finally, we present the reliability as a design criterion, advantages and disadvantages of our methodology.     

Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2–2.3 nm) oxides

Ultra-thin gate-oxide reliability is an essential factor in CMOS technologies. The low voltage gate current in ultra-thin oxide of metal–oxide–semiconductor devices is very sensitive to electrical stresses. It can be used as a reliability monitor when the oxide thickness becomes too small for traditional electrical measurements. In this paper, the low voltage stress induced leakage current (LVSILC) for various oxide thicknesses ranging from 1.2 to 2.3 nm is investigated during constant voltage stress (CVS). From the LVSILC measurements, we shown that time to breakdown can be deduced as a function of the stress voltage. We also study the effect of elevated stress temperature on the time to breakdown. We show that temperature dependence of the time to breakdown is non-Arrhenius and decreases in a drastic way with a slope of 0.036 decade/°C.     

Phylogenetic-Derived Insights into the Evolution of Sialylation in Eukaryotes: Comprehensive Analysis of Vertebrate β-Galactoside α2,3/6-Sialyltransferases (ST3Gal and ST6Gal)

Cell surface of eukaryotic cells is covered with a wide variety of sialylated molecules involved in diverse biological processes and taking part in cell–cell interactions. Although the physiological relevance of these sialylated glycoconjugates in vertebrates begins to be deciphered, the origin and evolution of the genetic machinery implicated in their biosynthetic pathway are poorly understood. Among the variety of actors involved in the sialylation machinery, sialyltransferases are key enzymes for the biosynthesis of sialylated molecules. This review focus on β-galactoside α2,3/6-sialyltransferases belonging to the ST3Gal and ST6Gal families. We propose here an outline of the evolutionary history of these two major ST families. Comparative genomics, molecular phylogeny and structural bioinformatics provided insights into the functional innovations in sialic acid metabolism and enabled to explore how ST-gene function evolved in vertebrates.     

Design of Phosphonated Imidazolium-Based Ionic Liquids Grafted on γ-Alumina: Potential Model for Hybrid Membranes

Imidazolium bromide-based ionic liquids bearing phosphonyl groups on the cationic part were synthesized and grafted on γ-alumina (γ-Al₂O₃) powders. These powders were prepared as companion samples of conventional mesoporous γ-alumina membranes, in order to favor a possible transfer of the results to supported membrane materials, which could be used for CO₂ separation applications. Effective grafting was demonstrated using energy dispersive X-ray spectrometry (EDX), N₂ adsorption measurements, fourier transform infrared spectroscopy (FTIR), and special attention was paid to ³¹P and ¹³C solid state nuclear magnetic resonance spectroscopy (NMR).     

The Use of Pro-Angiogenic and/or Pro-Hypoxic miRNAs as Tools to Monitor Patients with Diffuse Gliomas

IDH (isocitrate dehydrogenase) mutation, hypoxia, and neo-angiogenesis, three hallmarks of diffuse gliomas, modulate the expression of small non-coding RNAs (miRNA). In this paper, we tested whether pro-angiogenic and/or pro-hypoxic miRNAs could be used to monitor patients with glioma. The miRNAs were extracted from tumoral surgical specimens embedded in the paraffin of 97 patients with diffuse gliomas and, for 7 patients, from a blood sample too. The expression of 10 pro-angiogenic and/or pro-hypoxic miRNAs was assayed by qRT-PCR and normalized to the miRNA expression of non-tumoral brain tissues. We confirmed in vitro that IDH in hypoxia (1% O₂, 24 h) alters pro-angiogenic and/or pro-hypoxic miRNA expression in HBT-14 (U-87 MG) cells. Then, we reported that the expression of these miRNAs is (i) strongly affected in patients with glioma compared to that in a non-tumoral brain; (ii) correlated with the histology/grade of glioma according to the 2016 WHO classification; and (iii) predicts the overall and/or progression-free survival of patients with glioma in univariate but not in a multivariate analysis after adjusting for sex, age at diagnosis, and WHO classification. Finally, the expression of miRNAs was found to be the same between the plasma and glial tumor of the same patient. This study highlights a panel of seven pro-angiogenic and/or pro-hypoxic miRNAs as a potential tool for monitoring patients with glioma.