Synthesis and characterisation of copolyesters from poly(ethylene terephthalate) and poly(hexamethylene terephthalate)

Copolyesters containing poly(ethylene terephthalate) and poly(hexamethylene terephthalate) (PHT) were prepared by a melt condensation reaction. The copolymers were characterised by infrared spectroscopy and intrinsic viscosity measurements. The density of the copolyesters decreased with increasing percentage of PHT segments in the backbone. Glass transition temperatures (T_g). melting points (T_m) and crystallisation temperatures (T_c) were determined by differential scanning calorimetry. An increase in the percentage of PHT resulted in decrease in T_g, T_m and T_c. The as-prepared copolyesters were crystalline in nature and no exotherm indicative of cold crystallisation was observed. The relative thermal stability of the polymers was evaluated by dynamic thermogravimetry in a nitrogen atmosphere. An increase in percentage of PHT resulted in a decrease in initial decomposition temperature. The rate of crystallisation of the copolymers was studied by small angle light scattering. An increase in percentage of PHT resulted in an increase in the rate of crystallisation.     

Half-bridge inverter using 4H-SiC gate turn-off thyristors

This paper reports on the first demonstration of a half-bridge power inverter constructed from silicon carbide gate turn-off thyristors (GTOs) operated in the conventional GTO mode. This circuit was characterized with input bus voltages of up to 600 VDC and 2 A (peak current density of 540 A/cm²) with resistive loads using a pulse-width modulated switching frequency of 2 kHz. We discuss the implications of the thyristor's electrical characteristics and the circuit topology on the overall operation of the half-bridge circuit. This work has determined the conservative critical rate of rise value of the off-state voltage to be 200 V/μs in these devices     

Large signal analysis of the LCC-type parallel resonant converterusing discrete time domain modeling

A discrete time domain model for the LCC-type parallel resonant power converter has been derived. This model has been used to predict the large signal behavior of the power converter. The peak component stresses and the dynamic response of the key state variables, as obtained from the large signal analysis, using PRO-MATLAB software are plotted. SPICE results are included to verify the analytical results. Experimental results are also presented to verify the theory     

Inductive switching of 4H-SiC gate turn-off thyristors

The high-temperature operation of a silicon carbide gate turn-off thyristor is evaluated for use in inductively loaded switching circuits. Compared to purely resistive load elements, inductive loads subject the switching device to higher internal power dissipation. The ability of silicon carbide components to operate at elevated temperatures and high power dissipations are important factors for their use in future power conversion/control systems. In this work, a maximum current density of 540 A/cm² at 600 V was switched at a frequency of 2 kHz and at several case temperatures up to 150°C. The turn-off and turn-on characteristics of the thyristor are discussed     

What decides: high mortality in paediatric acute renal failure?

Forty paediatric cases of A.R.F. (Acute Renal Failure) of various aetiology were included in the study. 60% of patients were less than 4 years of age with male predominance. 80% cases reported to us very late with oligoanuria of more than 24 hours (2-7 days). Diarrhoea, vomiting and fever were other dominant symptoms. Maximum cases were severely anaemic (87.5%) with mean Hb 7.73 +/- 1.9 gm%. 40% cases were of underweight while only one case (2.5%) was of over weight, inspite of volume excess in 40% cases. All 24 cases, who were estimated for serum albumin, found to have marked hypoalbuminemia. Mortality was found to be as high as 65% inspite of effective peritoneal dialysis in all cases. High mortality seems to be due to profound anuria of many days (because of marked delay in reaching the hospital), fever and malnutrition besides other factors as aetiology.     

Synthesis and characterization of acidic properties of Al-SBA-15 materials with varying Si/Al ratios

Al-SBA-15 of varying Si/Al ratios in the range 11.4–78.4 was synthesized using tri-block copolymer P123. The calcined materials were examined by XRD, pore size distribution, surface area, ²⁷Al NMR spectroscopy. The acidity and acid strength distribution were studied using microcalorimetric adsorption of NH₃. The acidic properties were also examined by cumene cracking reaction as a function of Si/Al ratios. Systematic variation of acidity and activity was observed as a function of Si/Al ratio. The initial heats of NH₃ adsorption correlated well with activity indicate that acid sites with ΔH > 100 kJ/mole is responsible for cumene cracking activity. Linear correlations were obtained with total acidity and cumene cracking activities. The tetrahedral aluminum was found to be responsible for the observed acidities and catalytic activities.     

CRITICAL POINTS IN THE SOLIDIFICATION OF A PURE MATERIAL

Patterns in the solidification of a pure material are dealt with in this article. Results, deduced from a simple model based on heat conduction in the two phases and the effect of surface tension on the equilibrium temperature at the moving front, present a guide for experimental work. By introducing far-field conditions imitating what can be achieved in an experiment, we explain how the depths of the phases and the width of the container influence the patterns that can be seen if one advances the control variable to the critical point and then just beyond. Our new result is the existence of a third critical point. It occurs at small wave numbers and it is independent of surface tension. It appears because we take the depths of the phases into account. These depths are input values that offer the possibility of controlling crest-to-trough conduction, stabilizing in the solid, destabilizing in the liquid. The new critical point, and the patterns attending its appearance, can be found in cells of easily attainable widths.     

Role of electron traps in the radiation hardness of thermallynitrided silicon dioxide

A number of samples of thermally nitrided SiO₂ with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO₂, but is not the sole cause of it