Mixed oxide supported hydrodesulfurization catalysts—a review

Support effects form important aspect of hydrodesulfurization (HDS) studies and mixed oxide supports received maximum attention in the last two decades. This review will focus attention on studies on mixed oxide supported Mo and W catalysts. For convenience of discussion, these are divided into Al₂O₃ containing mixed oxide supports, TiO₂ containing mixed oxide supports, ZrO₂ containing mixed oxide supports and other mixed oxide supports containing all the rest. TiO₂ containing mixed oxides received maximum attention, especially TiO₂–Al₂O₃ supported catalysts. A brief discussion about their prospects for application to ultradeep desulfurization is also included. An overview of the available literature with emphasis on research carried out in our laboratory form the contents of this publication.     

Mechanism of the skeletal isomerisation of linear butenes over ferrierite: analysis of side reactions

An investigation of the effect of reaction conditions on product distribution in the skeletal isomerisation reaction of linear butenes has been carried out. The main reaction routes over ferrierite have been identified. Beside the main product isobutene, major by-product formation occurs. The unwanted reactions include dimerisation of butene to form octenes, hydrogen transfer yielding small amounts of saturated C₃ and C₄ hydrocarbons and disproportionation producing propene and pentenes. The most abundant by-products were pentene and propene, though these were not formed in equimolar amounts as could be expected. Oligomerisation experiments of propene over ferrierite produced large amounts of butene and pentene, revealing the presence of adsorbed nonene. The cracking of this surface species to hexene and propene is the most likely reaction route for the excess propene formation. This additional path to propene formation operates mainly at temperatures above 623 K.     

An integrated modeling approach to predict flooding on urban basin.

Correct prediction of flood extents in urban catchments has become a challenging issue. The traditional urban drainage models that consider only the sewerage-network are able to simulate the drainage system correctly until there is no overflow from the network inlet or manhole. When such overflows exist due to insufficient drainage capacity of downstream pipes or channels, it becomes difficult to reproduce the actual flood extents using these traditional one-phase simulation techniques. On the other hand, the traditional 2D models that simulate the surface flooding resulting from rainfall and/or levee break do not consider the sewerage network. As a result, the correct flooding situation is rarely addressed from those available traditional 1D and 2D models. This paper presents an integrated model that simultaneously simulates the sewerage network, river network and 2D mesh network to get correct flood extents. The model has been successfully applied into the Tenpaku basin (Nagoya, Japan), which experienced severe flooding with a maximum flood depth more than 1.5 m on September 11, 2000 when heavy rainfall, 580 mm in 28 hrs (return period > 100 yr), occurred over the catchments. Close agreements between the simulated flood depths and observed data ensure that the present integrated modeling approach is able to reproduce the urban flooding situation accurately, which rarely can be obtained through the traditional 1D and 2D modeling approaches.     

The sliding-window packet switch: a new class of packet switch architecture with plural memory modules and decentralized control

Shared-memory based packet switches are known to provide the best possible throughput performance for bursty data traffic in high-speed packet networks and internets compared with other buffering strategies under conditions of identical memory resources deployed in the switch. However, scaling of shared-memory packet switches to a larger size has been restricted mainly due to the physical limitations imposed by the memory-access speed and the centralized control for switching functions in shared-memory switches. A new scalable architecture for a shared-memory packet switch, called the sliding-window (SW) switch, is proposed to overcome these limitations. The SW switch introduces a new class of switching architecture, where physically separate multiple memory modules are logically shared among all the ports of the switch, and the control is decentralized. The SW switch alleviates the bottleneck caused by the centralized control of switching functions in large shared-memory switches. Decentralized switching functions enable the SW switch to operate in a pipeline fashion to enhance scalability and switching capacity compared with that of previously known classes of shared-memory switch architecture.     

Off-line quality control for V-process castings

In the present work Taguchi's approach has been applied to the V-process castings of Al-11 per cent Si alloy to acertain the most influential control factors which will provide better and consistent surface finish to the castings regardless of the noise factors present. The control factors of the V-process that may affect the quality of the castings are the molding sand, vibration frequency, vibrating time, degree of vacuum imposed, and pouring temperature. In order to understand how these factors affect the surface roughness of the V-process castings, response surface methodology has been applied, and to obtain the optimal setting of the control factors Taguchi's method has been used. It is found that the pouring temperature has a significant effect on the surface roughness of Al-11 per cent Si alloy castings made by a V-process. Thus the pouring temperature must be kept at the lower level. All other factors are insignificant. Therefore, any setting of the insignificant factors/variables that give the minimum cost can be used.     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

We report a new structure, called the shielded ohmic contact (ShOC) rectifier which utilizes trenches filled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high-barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.