An efficient manufacturing method for I-shaped cross-sectional CFRP beam with arbitrary arrangement of carbon fiber using electro-activated resin molding

Abstract

The I-shaped cross-sectional beam of CFRP (CFRP I-beam) is usually manufactured by the continuous protrusion method. Carbon fibers can only be arranged in the longitudinal direction. The CFRP I-beam with arbitrary arrangement of carbon fiber was manufactured with applying the electro-activated deposition molding method. The carbon fiber fabric was immersed in the deposition solution and energized, epoxy resin precipitated around carbon fiber and impregnated. The resin-impregnated fabric was installed to the mold, and the CFRP I-beam was fabricated. The CFRP I-beam was subjected to three-point bending tests, and the relationship between load-deflection was simulated by finite-element analysis.     

Consideration of Femtosecond Radiation Generation on NewSUBARU Storage Ring

We studied on realization of short pulse gamma ray and X-ray simultaneously induced by a femtosecond laser on NewSUBARU storage ring. Based on the fact that the transverse dimensions of electron beam are much shorter than the longitudinal one, the laser light is arranged to collide the electron beam at a right angle to generate femtosecond pulse gamma ray, furthermore, the modulated part of the electron bunch gives rise to short pulse X-ray by synchrotron radiation from a downstream bending magnet. The temporal characteristic of the radiation is analyzed in this paper, as well as the performances are estimated.     

Apoptosis occurs in granulosa cells but not cumulus cells in the atretic antral follicles in pig ovaries

The porcine antral follicles, 3-6 mm in diameter, were dissected from the ovaries of mature pigs, and then granulosa and cumulus cells were isolated from each follicle. In atretic follicles, high activity of neutral Ca2+/Mg2+-dependent endonuclease and DNA ladder formation, estimated by electrophoresis, were noted in granulosa cells but not in cumulus cells. Extremely low activity of the endonuclease and no DNA ladder formation were observed in both types of cells obtained from healthy follicles. Moreover, apoptotic cells were observed histochemically among granulosa cells only. A good correlation (r = 0.987) between the endonuclease activity of granulosa cells and the progesterone/estradiol ratio of follicular fluid in each follicle was found. These results suggest that apoptosis occurs in granulosa cells but not cumulus cells in the atretic antral follicles in pigs.     

液闪效率示踪法校正效果的评价

本文评价了Aloka商品液闪仪效率示踪法dpm校正的效果。轻,中度猝灭校正效果理想,具有简便、实用和适用性广泛的特点。严重化学和颜色猝灭样品的校正结果分别随猝灭增加而向增大和减小的方向偏离,形成喇叭状曲线,文中对这一现象给出初步解释。     

Breakdown characteristics of oil and paper insulation for a very fast transient voltage

This paper describes the dielectric breakdown characteristics of oil and oil‐impregnated paper for very fast transient (VFT) voltages. Blumlein circuits generate VFT voltages of 60 and 300 ns in a pulse width that simulates disconnecting switching surges in gas‐insulated switch gears. We measured the breakdown voltages of needle‐to‐plane, plane‐to‐plane oil gaps and several pieces of paper between plane electrodes for VFT and lightning impulse voltages. The measured data were formulated in V‐t characteristics and Weibull probability distributions. The inclination n of V‐t characteristics of insulating paper is 150, which is less than n = 13.7 of the plane‐to‐plane oil gap in the VFT time range. The shape parameters of Weibull distribution obtained in this study show that the scattering of breakdown voltages of paper is much less than that of oil. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(4): 16–24, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10043     

Floating-island TFT leakage caused by process step reduction

The leakage mechanism for a top-gate thin-film transistor (TFT) produced using the fewest process steps in the industry is analyzed in order to achieve a high-contrast liquid crystal display (LCD). Using a T-shaped TFT structure, the OFF and ON channel lengths are defined independently, so that the leakage can be reduced with no ON current decrease     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.