A Bayesian propensity score adjustment for latent variable modeling and MCMC algorithm

The estimation of the differences among groups in observational studies is frequently inaccurate owing to a bias caused by differences in the distributions of covariates. In order to estimate the average treatment effects when the treatment variable is binary, Rosenbaum and Rubin [1983. The central role of the propensity score in observational studies for causal effects. Biometrika 70, 41-55] proposed an adjustment method for pre-treatment variables using propensity scores. Imbens [2000. The role of the propensity score in estimating dose-response functions. Biometrika 87, 706-710] extended the propensity score methodology for estimation of average treatment effects with multivalued treatments.However, these studies focused only on estimating the marginal mean structure. In many substantive sciences such as the biological and social sciences, a general estimation method is required to deal with more complex analyses other than regression, such as testing group differences on latent variables. For latent variable models, the EM algorithm or the traditional Monte Carlo methods are necessary. However, in propensity score adjustment, these methods cannot be used because the full distribution is not specified.In this paper, we propose a quasi-Bayesian estimation method for general parametric models that integrate out the distributions of covariates using propensity scores. Although the proposed Bayes estimates are shown to be consistent, they can be calculated by existing Markov chain Monte Carlo methods such as Gibbs sampler. The proposed method is useful to estimate parameters in latent variable models, while the previous methods were unable to provide valid estimates for complex models such as latent variable models.We also illustrated the procedure using the data obtained from the US National Longitudinal Survey of Children and Youth (NLSY1979-2002) for estimating the effect of maternal smoking during pregnancy on the development of the child's cognitive functioning.     

Oligosaccharide structures formed during the hydrolysis of lactose by Aspergillus oryzae β-galactosidase

Di-, tri-, tetra-, penta- and hexasaccharides were formed during the hydrolysis of lactose by transgalactosylation reaction of Aspergillus oryzae β-galactosidase. In this study the isolation and characterization of the major constituents of tri-, tetra- and pentasaccharides are described. The structure elucidation of 3 tri-, 2 tetra- and 1 pentasaccharides was carried out by methylation analysis, mass spectrometry and ¹³C-nmr spectrometry. The trisaccharides are $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 3)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-}\text{d}\text{-}\text{glucose}\text{(3′-}\text{galactosyl-lactose}\text{)}$, $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-}\text{d}\text{-}\text{glucose}\text{(6′-}\text{galactosyl-lactose}\text{)}$ and $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-O-[β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)]-}\text{d}\text{-}\text{glucose}\text{(4,6-}\text{digalactosyl-glucose}\text{)}$. Tetrasaccharides are $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-}\text{d}\text{-}\text{glucose}$ and $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 3)}$ [or $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 3)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)]-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-}\text{d}\text{-}\text{glucose}$. Pentasaccharide is $\text{O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 6)-O-β-}\text{d}\text{-}\text{galactopyranosyl}\text{-(1 → 4)-}\text{d}\text{-}\text{glucose}$.     

Mutated KIT Tyrosine Kinase as a Novel Molecular Target in Acute Myeloid Leukemia

KIT is a type-III receptor tyrosine kinase that contributes to cell signaling in various cells. Since KIT is activated by overexpression or mutation and plays an important role in the development of some cancers, such as gastrointestinal stromal tumors and mast cell disease, molecular therapies targeting KIT mutations are being developed. In acute myeloid leukemia (AML), genome profiling via next-generation sequencing has shown that several genes that are mutated in patients with AML impact patients’ prognosis. Moreover, it was suggested that precision-medicine-based treatment using genomic data will improve treatment outcomes for AML patients. This paper presents (1) previous studies regarding the role of KIT mutations in AML, (2) the data in AML with KIT mutations from the HM-SCREEN-Japan-01 study, a genome profiling study for patients newly diagnosed with AML who are unsuitable for the standard first-line treatment (unfit) or have relapsed/refractory AML, and (3) new therapies targeting KIT mutations, such as tyrosine kinase inhibitors and heat shock protein 90 inhibitors. In this era when genome profiling via next-generation sequencing is becoming more common, KIT mutations are attractive novel molecular targets in AML.     

Queuing Scheme for Improved Downlink Throughput on WLANs

A transmission queuing scheme is described that increases downlink throughput on wireless local area networks (WLANs) while also increasing the total throughput. When the amount of uplink traffic increases on a WLAN, the carrier sense multiple access with collision avoidance (CSMA/CA) protocol, which is the prescribed scheme for IEEE 802.11 WLAN channel access, may substantially reduce the rate of downlink data frame transmission. This results in severe throughput degradation for mobile stations with downlink traffic. The proposed scheme comprises a transmission control function based on consecutive transmission, as described in the IEEE 802.11e standard, and a dynamic queue prioritization algorithm. Simulation results demonstrate that the proposed scheme increases the maximum total throughput for uplink and downlink traffic by 17% compared with the conventional distributed coordination function (DCF) scheme and that it reduces the difference between uplink and downlink throughput. In an environment where transmission errors occur, the difference in throughput is reduced by about 50% compared with the conventional schemes.     

Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Clockless Stochastic Decoding of Low-Density Parity-Check Codes: Architecture and Simulation Model

This paper introduces clockless stochastic decoding for high-throughput low-density parity-check (LDPC) decoders. Stochastic computation provides ultra-low-complexity hardware using simple logic gates. Clockless decoding eliminates global clocking, which eases the worst-case timing restrictions of synchronous stochastic decoders. The lack of synchronization might use outdated bits to update outputs in computation nodes; however, it does not significantly affect output probabilities. A timing model of clockless-computation behaviours under a 90 nm CMOS technology is used to simulate the BER performance of the proposed decoding scheme. Based on our models, the proposed decoding scheme significantly reduces error floors due to the “lock-up” problem and achieves superior BER performance compared with conventional synchronous stochastic decoders. The timing model includes metastability to verify the affect on BER performance.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

Magnetization distribution of magnetic vortex of amorphous FeSiB investigated by electron holography and computer simulation

The three-dimensional spin structure of the magnetic vortex of FeSiB, an amorphous soft magnetic material, was investigated by holography observation and computer simulation. Magnetization distribution in the neighborhood of the vortex center was estimated from the phase distribution obtained by holography observation. To confirm this magnetization distribution, sample-tilting experiments were performed: when the sample was tilted with respect to the electron beam direction, the phase-image center was found to shift along the tilting axis. Finite-element computer simulation was carried out to estimate the amount of shifts of the phase-image center in the sample tilting from the experimental magnetization distributions in the no sample-tilting conditions. We found that the simulated shifts of the phase-image center were in good agreement with those in the sample-tilting experiment, thus confirming the magnetization distribution near the vortex center obtained by holography observation.     

Lateral Inhomogeneity in the Electronic Structure of a Conjugated Poly(3‐hexylthiophene) Thin Film

How annealing influences the morphology of a highly regioregular poly(3‐hexylthiophene) (RR‐P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high‐molecular‐weight (MW) RR‐P3HT films tend to show low crystallinity even after annealing, it is found that high‐MW RR‐P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X‐ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR‐P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high‐MW RR‐P3HT film.     

Improving the photovoltaic performance of co‐evaporated Cu2ZnSnS4 thin‐film solar cells by incorporation of sodium from NaF layers

We have investigated the influence of sodium (Na) on the properties of co‐evaporated Cu₂ZnSnS₄ (CZTS) layer microstructures and solar cells. The photovoltaic performance and diode properties were improved by incorporating Na from NaF layers into the CZTS layers, while Na had a negligible effect on the microstructural properties of the layer. The best cell fabricated by using an optimal CZTS layer (Cu/(Zn + Sn) = 0.70, Zn/Sn = 1.8) yielded an active area efficiency of 5.23%. The analysis of device properties suggests that charge‐carrier recombination at CZTS/CdS interface is suppressed by intentional Na incorporation from NaF layers. Copyright © 2016 John Wiley & Sons, Ltd.